纳米ZnO和ZnO-SiO2复合薄膜的光学性质研究

通过溶胶凝胶(sol-gel)法分别在玻璃衬底上制备了ZnO纳米薄膜和ZnO-SiO₂纳米复合薄膜,并利用紫外-可见光分光光度计对薄膜的光学性能进行了分析.可见光-紫外透射谱显示,随着ZnO溶胶浓度从0.7mol/L降低到0.006mol/L,制备的ZnO薄膜从只出现一个380nm(对应的光学禁带宽度为3.27eV)左右的吸收边到在380和320nm(对应的光学禁带宽度为3.76eV)左右各出现一个吸收边,并且随着ZnO溶胶浓度的降低,在380—320nm波段内的透过率明显提高.而Z 关键词： 纳米ZnO 2复合薄膜')" href="#">ZnO-SiO₂复合薄膜 溶胶凝胶法 透射率     

金属有机物化学气相沉积法生长Ga2（1-x）In2xO3薄膜的结构及光电性能研究

采用金属有机物化学气相沉积（MOCVD）法在蓝宝石（0001）衬底上制备出了Ga_2（1-x）In_2xO₃（x=01—09）薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明：当In组分x=02时,样品为单斜β-Ga₂O₃结构;x=05的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善 关键词： 金属有机物化学气相沉积 2（1-x）In_2xO₃薄膜')" href="#">Ga_2（1-x）In_2xO₃薄膜 蓝宝石衬底 退火     

纳米ZnO和ZnO-SiO2复合薄膜的光学性质研究

通过溶胶凝胶(sol-gel)法分别在玻璃衬底上制备了ZnO纳米薄膜和ZnO-SiO2纳米复合薄膜,并利用紫外.可见光分光光度计对薄膜的光学性能进行了分析.可见光一紫外透射谱显示,随着Zn0溶胶浓度从0.7 mol/L降低到0.006 mol/L,制备的ZnO薄膜从只出现一个380 nm(对应的光学禁带宽度为3.27 eV)左右的吸收边到在380和320nm(对应的光学禁带宽度为3.76 ev)左右各出现一个吸收边,并且随着ZnO溶胶浓度的降低,在380-320 nm波段内的透过率明显提高.而ZnO-SiO2复合薄膜只在310 nm左右出现一个吸收边.SiOO2的包覆宽化了ZnO的禁带宽度,包覆后的禁带宽度可达到3.87 ev.     

不同腔结构下的声光调Q双包层光纤激光器特性研究

报道了半导体激光器端面抽运不同结构的声光调Q的双包层光纤激光器的脉冲输出特性. 对前向、后向不同抽运方式的掺镱调Q双包层光纤激光器在输出平均功率,调Q脉冲宽度及脉冲稳定性进行了对比及讨论;其中后向抽运的光纤激光器,在10kHz重复频率调制下,获得了斜效率为60％的平均功率输出,其脉冲宽度为52ns,单脉冲能量为03mJ. 最后利用不同抽运方式下的速率方程,理论分析调Q脉冲的特性,分析结果与实验相符. 关键词： 双包层光纤激光器 声光开关 前向抽运 后向抽运     

单晶和孪晶的Zn0.96Co0.04O稀磁半导体薄膜的制备与研究

采用分子束外延技术分别在不同晶面的蓝宝石（sapphire Al₂O₃）基片上制备了沿c轴生长的Zn_0.96Co_0.04O稀磁半导体薄膜.发现在Al₂O₃（1120）晶面（a面）上薄膜是二维层状外延生长的高质量单晶薄膜,而在Al₂O₃（0001）晶面（c面）上薄膜却具有有趣的孪晶结构,部分区域相互之间有一个30°的面内转动来减少和基片之间的失配度.在孪晶薄膜中存在的这些相互旋转形成的区域界面上会引起载流子强烈的散射作用,导致载流子迁移率的下降和平均自由程的缩短.利用X射线吸收精细结构技术证明了无论单晶还是孪晶的Zn_0.96Co_0.04O薄膜中所有的Co都以+2价替代进入了ZnO的晶格,而没有形成任何杂相.而对其磁性研究发现,孪晶的薄膜样品比高质量的单晶薄膜样品具有大得多的饱和磁矩.这充分说明孪晶薄膜中的铁磁性来源与缺陷有关.我们还对铁磁性耦合机制进行了探讨. 关键词： Co掺杂ZnO 稀磁半导体 X射线吸收精细结构 单晶和孪晶薄膜     

ZnO/Si异质结的光电转换特性研究

利用直流反应溅射方法在p型Si衬底上生长掺Al的n型ZnO薄膜,测量了由n型ZnO薄膜和p型Si衬底组成的异质结在黑暗和光照条件下的I-V特性,结果表明该异质结具有优良的整流特性,而且在光照条件下的反向电流迅速增大并很快趋于饱和.通过测量ZnO薄膜的光电流和异质结的光电压的光谱响应,初步分析了异质结的光电转换机理.测量结果显示,在入射光波长为380nm时光电流强度明显下降,反映出光电流与ZnO薄膜禁带宽度的密切关系;同时还发现,在与ZnO禁带宽度相对应的波长前后所产生的光生电压方向相反.推测这一现象与异质结的能带结构密切相关. 关键词： ZnO薄膜 异质结 光电转换 光谱响应     

蓝宝石基片的处理方法对ZnO薄膜生长行为的影响

采用反应射频磁控溅射方法,在经过不同方法处理的蓝宝石基片上,在同一条件下沉积了ZnO薄膜.利用原子力显微镜、X射线衍射、反射式高能电子衍射等分析技术,对基片和薄膜的结构、表面形貌进行了系统表征.研究结果显示,不同退火条件下的蓝宝石基片表面结构之间没有本质的差异,均为α-Al₂O₃ (001)晶面,但基片表面形貌的变化较大.在不同方法处理的蓝宝石基片上生长的ZnO薄膜均具有高c轴取向的织构特征,但薄膜的表面形貌差异较大.基片经真空退火处 关键词： ZnO薄膜 反应磁控溅射 基片处理 形貌分析     

基于少数层石墨烯可饱和吸收的锁模光纤激光器

本文利用化学气相沉积法高温分解甲烷在铜箔上制得单层石墨烯薄膜, 测量了石墨烯的拉曼光谱. 将石墨烯薄膜逐层转移到光纤跳线的氧化锆插芯端面上做成可饱和吸收材料, 实验研究了环形腔掺铒光纤脉冲激光器的输出特性, 获得了峰值波长为1560.1 nm, 3 dB带宽为0.27 nm, 重复频率为7.69 MHz, 脉冲宽度为58.8 ps 的锁模脉冲序列. 时间带宽积为1.98, 表明脉冲出现了啁啾. 最后, 通过改变两个光纤活动接头之间的空气腔的长度, 激光波长实现了4 nm的调谐. 关键词： 光纤激光器 石墨烯 锁模     

真空条件下激光诱导光纤损伤特性研究

实验研究并分析了调Q Nd:YAG 脉冲激光诱导光纤损伤特性.设计了在真空条件下全石英光纤传输1064 nm 脉冲激光实验.通过将激光注入光纤端面气压降低到10—100 Pa, 光纤端面击穿阈值提高到大气环境下的185 倍.结合光纤端面损伤形貌分析可知,光纤端面损伤主要是由于激光驻波场和烧蚀共同作用的结果,光纤端面或内部大量的缺陷降低了光纤抗激光损伤的能力.在真空条件下由于光纤端面光学击穿阈值的提高,激光诱导光纤损伤特性又表现出了另外一种损伤模式——光纤初始输入段损伤.它发生在光纤输入段附 关键词： 激光损伤 光束传输 真空 石英光纤     

ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。     

电子回旋共振氩等离子体中亚稳态粒子数密度及电子温度的测量

测量了电子回旋共振（ECR）氩等离子体中Ar的1s₅亚稳态粒子数密度，在气压 为02—0 8 Pa、功率为500—700W的范围内，利用吸收光谱法测量了Ar原子8115 nm谱线的吸收强 度，得到1s₅亚稳态粒子数密度为1×10¹⁵—4×10¹⁵ m ^-3.本文综合考 虑基态和1s₅亚稳态粒子的激发对Ar发射谱线强度的贡献后，用两条发射谱线强 度之比得 到电子温度.结果表明，计入了1s₅亚稳态激发的贡献后，所得到的电子温度与 只考虑基态的贡献得到的电子温度相比存在较大的差别. 关键词： 光谱法 亚稳态粒子数密度 电子温度 ECR等离子体源     

Ag掺杂p型ZnO薄膜及其光电性能研究

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体,以硝酸银水溶液为Ag掺杂源生长了Ag掺杂ZnO(ZnO：Ag)薄膜.研究了衬底温度对所得ZnO：Ag薄膜的晶体结构、电学和光学性质的影响规律.所得ZnO：Ag薄膜结构良好,在室温光致发光谱中检测到很强的近带边紫外发光峰,透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率,表明薄膜具有较高的晶体质量与较好的光学特性.霍尔效应测试表明,在500℃下获得了p型导电的ZnO：Ag薄膜,载流子浓度为5.30×10¹⁵cm关键词： ZnO：Ag薄膜 p型掺杂 超声喷雾热分解 霍尔效应     

Structural and optical properties of Au-implanted ZnO films

The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 °C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO₂. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au⁰ is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission.     

Anisotropy of absorption spectra of the rare-earth orthoaluminate TbAlO<Subscript>3</Subscript> in polarized light

Polarized spectra of the optical absorption of the 4f → 4f transition ⁷ F ₆ → ⁵ D ₄ in rare-earth orthoaluminate TbAlO₃ were experimentally studied at temperature T = 78 K. It was shown that the nontrivial character of the absorption anisotropy of TbAlO₃ at low temperatures could be related either to the symmetry of wave functions of the Stark sublevels of ⁷ F ₆ and ⁵ D ₄ multiplets combining in the optical transitions under study or to optical experiment geometry that takes into account the orientation of incident light polarization relative to the crystal axes and the axes of local coordinate systems of a rare-earth ion in orthoaluminate.     

纤锌矿结构Zn1-xMgxO电子结构及吸收光谱的第一性原理研究

采用第一性原理计算方法,计算了纤锌矿结构Zn_1-xMg_xO(x=0,00625,0125,025)的电子结构及吸收光谱. 计算结果表明,Mg的掺入使ZnO的电子结构发生了较大的改变,与Mg邻近的O原子得到电子的数目明显增大,进而O原子返回部分电子给邻近Zn原子. Zn-O间相互作用减弱,禁带宽度变大,这也从同一合金中Zn4s上移的程度得到证实. 其吸收光谱也随着Mg的掺入出现蓝移现象,其吸收边对应波长分别为379, 关键词： 第一性原理计算 电子结构 吸收光谱 纤锌矿结构ZnO     

Lineare optische anisotropie von antiferromagnetischem NiO im äusseren magnetfeld

Single crystals of NiO exhibit an optical anisotropy below their Néel temperature T_N = 523.7 K even without external magnetic fields. Linear dichroism and birefringence increase in proportion to the square of the antiferromagnetic long range order parameter. The spectra of both effects show detailed structures in the visible range: the dichroism exhibits a large peak at 2.12 eV and some smaller ones below and above; the birefringence increases steadily towards the fundamental absorption edge (3.75 eV); and, some structures are superposed in the visible range of the small 3d⁸-absorption bands. In external magnetic fields a large rise of the Néel temperature is detected by optical anisotropy. It is proportional to the square of the field strength: T_N(H) = T_N(O) + 0.585 K/Tesla². Below T_N optical anisotropy shows a slight magnetic field dependence. Our results are discussed by means of a microscopic model of the magneto-optical anisotropy in NiO.     

Pure and Sn-, Ga- and Mn-doped ZnO gas sensors working at different temperatures for formaldehyde,humidity, NH<Subscript>3</Subscript>, toluene and CO

ZnO and Sn-, Ga- and Mn-doped ZnO nanoparticles were prepared by a coprecipitation method, and characterized by scanning electron microscopy (SEM), energy dispersive spectra (EDS), X-ray diffraction (XRD) and Raman spectra. The gas sensing properties were studied using formaldehyde, relative humidity, NH₃, toluene and CO as the probes. The results show that all particles have wurtzite ZnO phase, though Sn–ZnO has a relatively smaller particle (and crystallite) size than the other three samples. Gas sensing property tests reveal that the temperature where the gas sensing maximum is gained (T _M) is changed by different dopants: Sn–ZnO and Mn–ZnO have relatively lower T _M (∼100°C lower) compared with that of pure ZnO, while Ga–ZnO has the same T _M as pure ZnO except in CO sensing. Thermoluminescence (TL) spectra were used to investigate the mechanism of T _M change. The peak positions of Ga–ZnO and ZnO are the same at 300–350°C, while that of Sn–ZnO shifts to 250–300°C, which might contribute to the same T _M of Ga–ZnO and pure ZnO and relatively lower T _M of Sn–ZnO. In the case of Mn–ZnO, the luminescence emission is evidently limited by its black color.     

Optical characterization of poly (ethylene oxide)/zinc oxide thin films

The optical characterization of poly (ethylene oxide)/zinc oxide thin films has been done by analyzing the absorption spectra in the spectral wavelength region 380–800 nm using a ultraviolet-spectrophotometer at room temperature. Thin film polymer composites made of poly (ethylene oxide) (PEO) containing zinc oxide (ZnO) filler concentrations (0%, 2%, 6%, 10%, and 14%) by weight were used in this study. The optical results obtained were analyzed in terms of the absorption formula for non-crystalline materials. The optical energy gap and other basic optical constants such as dielectric constants and optical conductivity were investigated and showed a clear dependence on the ZnO filler concentration. It was found that the optical energy gap for the composite films is less than that for the neat PEO, and that it decreases as the ZnO concentration increases. Enhancement of the optical conductivity was observed with increase in the ZnO concentration. Dispersion of refractive index was analyzed using the Wemple–DiDomenico single oscillator model. The refractive index (n), extinction coefficient (k), and dispersion parameters (E_o, E_d) were calculated for the investigated films.     

Preparation and characterization of the ZnO:Al/Fe65Co35/ZnO:Al multifunctional films

The ferromagnetic transparent conducting film is a multifunctional film which has high visible transmittance, low resistivity and room-temperature ferromagnetism, simultaneously. In this article, ferromagnetic transparent conducting ZnO:Al/Fe₆₅Co₃₅/ZnO:Al multilayer films were fabricated by inserting a middle magnetic Fe₆₅Co₃₅ layer into aluminum-doped zinc oxide (ZnO:Al) matrix using a magnetron sputtering apparatus at substrate temperature ranging from room temperature (RT) to 400^∘C. The total film thickness was about 400 nm and the middle Fe₆₅Co₃₅ alloy layer was 4 nm. The influences of substrate temperature (T _s ) on the structural, electrical, optical and magnetic properties of the multilayer films were systemically investigated. The results showed that the microstructure and performance of the composite multilayer films strongly depended on the substrate temperature. The present results also showed that the inserted middle Fe₆₅Co₃₅ alloy thin layer played an important role in providing the RT ferromagnetism and decreasing the resistivity of the multilayer films. Therefore, it is possible to obtain a multifunctional film material with the combination of good optical transparency, high electrical conductivity and RT ferromagnetism.     

ZnO(0001)表面吸附B的电子结构和光学性质研究

采用基于密度泛函理论的总体能量平面波超软赝势方法,结合广义梯度近似,对清洁ZnO(0001)表面及B/ZnO(0001)吸附体系进行了几何结构优化,计算了B/ZnO(0001)吸附体系的吸附能、能带结构、电子态密度和光学性质.计算结果表明:B在ZnO(0001)表面最稳定的吸附位置是T₄位.吸附后B/ZnO(0001)吸附体系表面带隙有所减小,表面态的组成发生变化,n型导电特性有一定程度的减弱,同时,对紫外光的吸收能力显著增强. 关键词： ZnO(0001)表面 B吸附 电子结构 光学性质