金属有机物化学气相沉积法生长Ga2（1-x）In2xO3薄膜的结构及光电性能研究

采用金属有机物化学气相沉积（MOCVD）法在蓝宝石（0001）衬底上制备出了Ga_2（1-x）In_2xO₃（x=01—09）薄膜，研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明：当In组分x=02时，样品为单斜β-Ga₂O₃结构；x=05的样品，薄膜呈现非晶结构，退火处理后薄膜结构得到明显的改善 关键词： 金属有机物化学气相沉积 2（1-x）In_2xO₃薄膜')" href="#">Ga_2（1-x）In_2xO₃薄膜 蓝宝石衬底 退火

Structural， optical and electrical properties of Ga2（1-x）In2xO3 films prepared by metalorganic chemical vapor deposition

Ga_2（1-x）In_2xO₃（x=01—09） thin films were prepared on α-Al₂O₃ （0001） substrates by metalorganic chemical vapor deposition （MOCVD）. The structure， the optical and electrical properties as well as the effect of annealing on the properties of the films were investigated in detail. The results indicate that the film deposited with composition x=02 was polycrystalline with β-Ga₂O₃ structure， the film with x=05 was amorphous and transformed into body-centered cubic （bcc） structure of In₂O₃ with a preferred orientation of （222） after annealing. For x=08， the obtained film showed bcc structure of In₂O₃ and the crystalinity was improved after annealing treatment. The average transmittance for the films in the visible range was over 85%. The band-gap of the Ga_2（1-x）In_2xO₃ films can be suitably tuned from 376 to 443 eV by controlling the gallium content and it is increased obviously by annealing.