Ag掺杂p型ZnO薄膜及其光电性能研究

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体，以硝酸银水溶液为Ag掺杂源生长了Ag掺杂ZnO(ZnO：Ag)薄膜.研究了衬底温度对所得ZnO：Ag薄膜的晶体结构、电学和光学性质的影响规律.所得ZnO：Ag薄膜结构良好，在室温光致发光谱中检测到很强的近带边紫外发光峰，透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率，表明薄膜具有较高的晶体质量与较好的光学特性.霍尔效应测试表明，在500℃下获得了p型导电的ZnO：Ag薄膜，载流子浓度为5.30×10¹⁵cm关键词： ZnO：Ag薄膜 p型掺杂 超声喷雾热分解 霍尔效应

Ag doped p-type ZnO films and its optical and electrical properties

Ag doped ZnO films (ZnO：Ag) were deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. Zn(CH₃COO)₂ and Ag(NO₃)₃ aqueous solution were used as the sources of Zn and Ag， respectively. The effect of substrate temperature on structural， electrical and optical properties of ZnO：Ag films were studied using X-ray diffraction， Hall effect measurement， photoluminescence spectra， and transmittance spectra measurement. All the measurements were performed at room temperature. It is found that the electrical and optical properties of the obtained ZnO：Ag thin films change dramatically due to Ag doping. The Ag doped p-type ZnO films with hole carrier concentration of 5.295×10¹⁵cm^-3 and Hall mobility of 6.61cm²·V^-1s^-1 at room temperature have been successfully obtained at optimal conditions. In photoluminescence measurements， a strong ultraviolet emission centered at 379nm and a relatively weak green emission band were observed， and in transmittance measurements， a high transmittance of～70% in the visible region and a sharp absorption edge at 375nm were observed for all samples.