SiO2-GeO2薄膜二次谐波产生的稳定性研究

利用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法制备了ＳｉＯ２－ＧｅＯ２薄膜,并测量了薄样品电场极化后光学二次谐波信号的相对大小和时间弛以豫特性,通过对汪同衬底材料及不同温度下电场极化薄膜样品二次谐波信号的时间弛豫特性比较,表明薄膜与衬底之间界面电荷的稳定性受衬底材料体电导率的影响,从而影响了薄薄膜样品二次谐波信号的稳定性。     

室温和液氮温度Si基底C60薄膜的微观结构与光学特性比较研究

在室温和液氮温度（77K）下用蒸镀法在Si(111)衬底上制备C60薄膜，用扫描电子显微镜（SEM）研究两种不同基底上制备薄膜的微观结构，并用椭圆偏振光谱仪测量了光学参数（包括吸收光谱，折射率及光频介电常数），结果表明，衬底温度降低，薄膜更均匀，颗粒更细，光学吸收峰位置出现蓝移且在整个光频范围吸收增强。     

低温缓冲层对氧化锌薄膜质量的影响

利用金属有机化学气相沉积(MOCVD)法,在Si衬底上外延生长ZnO薄膜。为了改善氧化锌薄膜的质量,首先在Si衬底上生长低温ZnO缓冲层,然后再生长高质量的ZnO薄膜。通过XRD、SEM、光致发光(PL)光谱的实验研究,发现低温ZnO缓冲层可有效降低ZnO薄膜和Si衬底之间的晶格失配以及因热膨胀系数不同引起的晶格畸变。利用低温缓冲层生长的ZnO薄膜的(002)面衍射峰的强度要比直接在Si上生长的ZnO薄膜样品的高,并且衍射峰的半高宽也由0.21°减小到0.18°,同时有低温缓冲层的样品室温下的光致发光峰也有了明显的增高。这说明利用低温缓冲层生长的ZnO薄膜的结晶质量和光学性质都得到了明显改善。     

偶氮金属螯合物薄膜的光学常数和吸收光谱

偶氮金属螯合物薄膜是一类新型光信息存储和光学非线性材料。通过旋涂法在单晶硅上制备了三种新型偶氮染料：2-（4-甲革-2-噻唑基偶氮）-5-二乙基胺苯酚（MTADP）掺杂聚合物,MTADP的镍螯合物（Ni-MTADP）和锌螯合物（Zn-MTADP）薄膜。利用宽谱扫描全自动椭圆偏振光谱仪测定了上述薄膜的椭偏光谱,获得了三种薄膜在400—700nm波段的复折射率、复介电常量和吸收系数。两种金属螯合物薄膜的共振波长比非螯合物薄膜红移了60—70nm;光学常数和吸收系数在峰值的数值也发生了明显的变化。由于这两种螯合物具有不同的立体结构,Ni-MTADP薄膜的共振波长比Zn-MTADP有10nm的红移。     

Pd/W/Si(111)双层膜界面X射线光电子能谱与俄歇电子能谱研究

利用X射线衍射（XRD），X射线光电子能谱（XPS）和俄歇电子能谱（AES）对Pd/W/Si（111）界面进行了研究。实验结果表明，当系统作低温退火时，受W膜的阻挡，未生成硅化物，但Pd/W界面和W/Si（111）界面均有互扩散。升高退火温度，Pd－W原子在Si衬底上形成互溶体，Pd原子已穿过W阻挡层而到达W/Si（111）界面处，随着退火温度的继续升高，首先在W/Si（111）界面处生成PdSi_x,WSi_x也随之生成，这样就形成Pd-W原子分布的“反转”，在薄     

碳化硼薄膜的激光法制备及性能

采用KrF准分子激光器,在Si,Ge光学衬底上制备了碳化硼薄膜,研究了不同激光能量、靶材与衬底距离、衬底负偏压等条件对薄膜性能的影响。利用傅里叶变换红外光谱仪（FT-IR）和纳米压痕仪,并依据光学薄膜测试的通用标准,对样品的光学透过率、纳米硬度及膜层与衬底的结合性能进行了测试。结果表明:Si,Ge衬底单面镀碳化硼薄膜后最高透过率提高10%以上,纳米硬度提高到未镀膜的3倍以上,且膜层与衬底有较好的结合性能,表明制备的碳化硼薄膜可对光学材料起到较好的增透保护作用。     

用椭偏术研究与接触介质有关的贵金属的介电函数

为了研究接触介质对金属光学性质的影响，实验中使用具有不同折射率的梯形棱镜作为衬底，将金和银蒸发到棱镜底部，用椭偏术分别测量了薄膜在金属-空气、金属-衬底界面的介电函数.结果表明：无论在Drude区，还是在带间跃迁区，金属-衬底界面处薄膜介电函数不仅与金属-空气界面处的测量值不同，而且随衬底折射率改变而改变.在固体接触条件下获得的结果与其他作者在液体接触条件下获得的结果相一致，但尚难被现有机制所解释. 关键词：     

以Au为缓冲层在Si衬底上生长ZnO薄膜

采用化学气相沉积(CVD)方法在Si(001)衬底上分别制备了有金属Au缓冲层以及无Au缓冲层的ZnO薄膜。其中Au缓冲层在物理气相沉积(PVD)设备中蒸发,厚度大约为300nm。有Au缓冲层的ZnO薄膜晶体质量比直接在Si衬底上生长有了显著提高。利用X射线衍射(XRD)研究了所生长ZnO薄膜的结晶质量,有Au缓冲层的ZnO薄膜虽然仍为多晶,但显示出明显的择优取向。用光学显微镜研究了ZnO薄膜的表面特征,金属Au缓冲层显著地提高了在Si衬底上生长的ZnO薄膜的晶粒尺寸及平整度。同时利用室温光致发光(PL)谱研究了ZnO薄膜的光学性质,并分析了有Au缓冲层的ZnO薄膜NEB发光峰强度反而弱的可能原因。     

用分光光度法研究非晶硅薄膜的光学性质

提出了一种测量薄膜透射光谱的方法.该方法用自制的夹具改进了分光光度计,保证了在测量大小不同的样品时参考光的强度和入射到待测样品上光的强度相同.利用改进后的分光光度计测量了沉积在玻璃衬底上非晶硅薄膜的透射光谱,并对透射光谱进行了拟合和计算,确定出非晶硅薄膜的光学常量和厚度.     

磁控溅射薄膜沉积速率的标定

在不同的溅射功率和溅射时间下，使用磁控溅射设备制备了系列薄膜Si／Fe（P1W，T1s）和Si/[Fe（P2W，T2s）／NiO（P3w，T3s）]10。利用小角X射线衍射测量了样品的衍射强度分布，并分别计算出了Fe和NiO在不同溅射功率下的沉积速率。实验结果表明，在测量范围内沉积速率与溅射功率之间存在线性关系。     

基体对应力诱导的纳米晶W膜开裂行为的影响

采用磁控溅射方法同时在Si(100)和聚酰亚胺(PI)基体上沉积W膜,对比研究不同基体约束对纳米晶W膜微观结构及应力诱导的开裂行为的影响.结果发现,在两种基体上W膜的裂纹形态明显不同.在Si基体上W膜的裂纹呈楔形,而在PI基体上W膜的裂纹呈半圆柱形凸起于薄膜表面.这种裂纹形态的差异源于两种基体上W膜的变形机理不同.在刚性Si基体上,W膜的裂纹扩展是通过晶粒平面内的转动实现的,而在柔性PI基体上W膜裂纹扩展是通过排列晶粒在平面内、外的转动协调完成的.分析表明,两种截然不同的开裂行为与不同基体上薄膜内应力的变 关键词： W膜 残余应力 裂纹 晶粒     

Silicon diffusion through thin tungsten films on silicon,studied with Auger spectroscopy

Silicon out-diffusion through ? 3000 Å tungsten films deposited on silicon by r.f. sputtering was studied using Auger spectroscopy. Silicon first diffuses to the tungsten film surface by grain boundary diffusion and surface migration. The out-diffusion kinetics were most strongly dependent on the thickness of the silicon dioxide layer between tungsten and silicon, and this (native) oxide thickness varied with substrate doping. The out-diffusion rate was independent of tungsten film thickness at 540 Å and 2400 Å. For substrates from which the native oxide was removed by backsputtering just prior to tungsten deposition, no Si out-diffusion to the W film surface was observed until almost the entire film had converted to WSi².     

Chemical-specific imaging of multicomponent metal surfaces on the nanometer scale by scanning tunneling spectroscopy

The topographic and chemical surface structure of a submonolayer iron film on a W(110) substrate has been studied by combined scanning tunneling microscopy and spectroscopy. Local tunneling spectra revealed a pronounced difference in the electronic structure between nanometer-scale iron islands of monolayer height and the bare W(110) substrate. In particular, a pronounced empty-state peak at 0.2 eV above the Fermi level has been identified for the iron islands. Based on the pronounced difference in the local tunneling spectra measured above the iron islands and the tungsten substrate, chemical-specific imaging was achieved by performing spatially resolved measurements of the differential tunneling conductivitydl/dU (x, y) at selected sample bias voltages.     

Europium adsorption on a tungsten surface with various degrees of oxidation

The kinetics of europium adsorption on a W(100) face with various degrees of oxidation were studied by thermal desorption and Auger electron spectroscopy. The spectrum of Eu atoms desorbed thermally from the W(100) face consists of three successively filling desorption phases whose desorption activation energy decreases from 3 to 2.1 eV with an increase in the surface coverage. The thermodesorption spectrum of Eu atoms from the W(100) face coated with a monatomic oxygen film contains five successively forming desorption phases, with the desorption activation energy increasing to 4 eV for the high-temperature phase. The oxidized W is reduced by europium, and the desorption of the W oxides is replaced by that of EuO. After a monolayer film has formed, the Eu film adsorbed on tungsten starts to grow in the form of three-dimensional crystallites. As the degree of W oxidation increases, the Eu film becomes less nonuniform, until a solid Eu film starts to grow on bulk W oxides and completely screens the tungsten Auger signal.     

Silicon nanotips formed by self-assembled Au nanoparticle mask

The Au nanoparticle monolayer is formed by self-assembly technology on the Si substrates terminated with different functional groups. Silicon nanotips were fabricated by a self-assembled gold colloidal particle monolayer as an etch mask. The silicon nanotips with high density and uniformity in height and shape were obtained using reactive ion etching (RIE). The Si nanotips on the surface of the 3-aminopropyltrimethoxysilane (APTMS)-treated Si substrate are less-ordered array and uniformity than 3-mercaptopropyltrimethoxysilane (MPTMS)-treated Si substrate at the same etching conditions. The ordered array and uniformity of Si nanotips on the APTMS-modified Si substrate was improved through heat-treatment. This result is implied the different functional groups on the Si surfaces could affect the formation of the Si nanostructures during RIE process. The uniformly nanotip pattern with height of >20 nm is obtained on the etched nanoparticle-coated Si substrate. This method can be applied to patterning a wide variety of thin film materials into tip arrays.     

Role of metal ions in growth and stability of Langmuir-Blodgett films on homogeneous and heterogeneous surfaces

Structure and stability of cadmium arachidate (CdA) Langmuir-Blodgett (LB) films on homogeneous (i.e., OH-, H-passivated Si(001) substrates) and heterogeneous (i.e., Br-passivated Si(001) substrates) surfaces were studied using X-ray reflectivity and atomic force microscopy techniques and compared with those of nickel arachidate (NiA) LB films. While on OH-passivated Si, an asymmetric monolayer (AML) structure starts to grow, on H-passivated Si, a symmetric monolayer (SML) of CdA forms, although for both the films, pinhole-type defects are present as usual. However, on heterogeneous Br-passivated Si substrates, a combination of AML, SML, shifted SML and SML on top of AML (i.e., AML/SML), all types of structures are found to grow in such a way that, due to the variation of heights in the out-of-plane direction, ring-shaped in-plane nanopatterns of CdA molecules are generated. Probably due to stronger head-head interactions and higher metal ion-carboxylic ligand bond strength for CdA molecules compared to NiA, easy flipping of SML on top of another preformed SML, i.e. a SML/SML structure formation was not possible and as a result a wave-like modulation is observed for the CdA film on such heterogeneous substrate. The presence of hydrophilic/hydrophobic interfacial stress on the heterogeneous substrate thus modifies the deposited molecular structure so that the top surface morphology for a CdA film is similar to monolayer buckling while that for NiA film is similar to monolayer collapse.     

气/液界面自组装金纳米粒子薄膜作为SERS基底检测三聚氰胺

采用气/液界面自组装方法制备金纳米粒子薄膜作为SERS基底,其结构规整、均匀,利用此基底对三聚氰胺实现高灵敏的半定量分析。此SERS基底的制备是直接于水相合成的金纳米粒子中加人正十二硫醇,金纳米粒子通过硫醇修饰后由亲水性转变成疏水性质,在相界面上自组装为致密金纳米粒子单层膜结构。这种SERS基底不仅制备方法简单,而且应用范围广,除了检测三聚氰胺还可以拓展到其他的非极性的分子如多环芳烃等高灵敏的半定量分析。     

Thin PTCDA films on Si(0 0 1): 1. Growth mode

We have studied the interface and thin film formation of the organic molecular semiconductor 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA) on clean and on hydrogen passivated Si(0 0 1) surfaces. The studies were made by means of high resolution X-ray photoelectron spectroscopy (HRXPS), near edge X-ray absorption fine structure (NEXAFS), low energy electron diffraction (LEED), and atomic force microscopy (AFM). On the passivated surface the LEED pattern is somewhat diffuse but reveals that the molecules grow in several ordered domains with equivalent orientations to the substrate. NEXAFS shows that the molecules are lying flat on the substrate. The Si 2p XPS line shape is not affected when the film is deposited so it can be concluded that the interaction at the interface between PTCDA and the substrate is weak. The evolution of the film formation appears to be homogeneous for the first monolayer with a nearly complete coverage of flat lying molecules based on the XPS attenuation. For layer thickness of 0.5-2 monolayers (ML) the molecules start to form islands, attracting the molecules in between, leaving the substrate partly uncovered. For thicker films there is a Stranski-Krastanov growth mode with thick islands and a monolayer thick film in between. For the clean surface the ordering of the film is much lower and angle resolved photoelectron spectroscopy (ARPES) of the molecular orbitals have only a small dependence of the emission angle. NEXAFS shows that the molecules do not lie flat on the surface and also reveal a chemical interaction at the interface.     

Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3?kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN₂ that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.     

基于硫蒸气处理转移的单层二硫化钼的荧光增强

采用化学气相沉积法在SiO2/Si衬底上制备了单层MoS2,再通过300℃硫蒸气处理用聚甲基丙烯酸甲酯(Polymethyl Methacrylate,PMMA)转移下的单层MoS2.使用原子力显微镜、真空荧光检测和拉曼光谱等手段表征了样品的形貌和光致发光性能.结果表明:经过硫蒸气处理转移后的单层MoS2的光致发光强度比由化学气相沉积法制备的未处理的单层MoS2的光致发光强度增强了约5倍.光致发光强度增强是由于在硫蒸气处理过程中,单层MoS2的部分硫空位被硫原子纳米团簇所填补,从而提高了光致发光效率.此外,分别将单层MoS2转移到SiO2/Si衬底、石英、三氧化铝及氟化镁衬底再经过硫处理后,也观察到了类似的荧光增强现象.