Yb:CaYAlO4再生放大器

阿秒科学是驱动超强超快激光往高平均功率和短脉冲宽度方向快速发展的动力之一.本文针对高重复频率阿秒光源的实际需求,开展了基于国产Yb:CaYAlO₄晶体的再生放大理论和实验研究.在理论研究中,根据Yb:CaYAlO₄晶体的热透镜计算结果,设计了热稳定性良好的模式可调再生腔;并对晶体π和σ偏振的放大输出能量和光谱进行计算.在此基础上,开展了Yb:CaYAlO₄晶体不同偏振性质的再生放大实验研究.在晶体π偏振的实验中,获得了平均功率16.1 W、单脉冲能量1.61 mJ、光谱中心波长1030 nm、光谱半高全宽16 nm的放大输出,压缩后的激光脉冲宽度为149 fs,压缩效率为92.1%,峰值功率大于9.5 GW.在σ偏振获得了平均功率28.7 W、单脉冲能量2.87 mJ、光谱中心波长1037 nm、光谱半高全宽11 nm的放大输出,压缩后的激光脉冲宽度为178 fs,压缩效率为91.5%,峰值功率大于14.2 GW,光束质量因子M² <1.2.以上研究结果实现了目前Yb:CaYAlO_4...     

KZnF3:Cr3+和KMgF3:Cr3+四角对称电子顺磁共振参量与晶格缺陷的研究

用Newman叠加模型研究了KZnF₃:Cr³⁺四角对称基态的零场分裂,证实了Zn²⁺空位和畸变的存在;并指出,空位对晶场的贡献不可忽略。计算得到:KZnF₃:cr³⁺晶体[0,01]方向的一个F^-配体向Cr³⁺移动Δ(KZnF₃)=0.0029-0.0043nm。还研究了KMgF₃:Cr^{3+关键词：}     

LD抽运Nd:Gd1-xYxVO4连续波激光器的实验研究

报道了一种半导体二极管(LD)抽运Nd:Gd1-xYxVO4晶体,采用简单、结构紧凑的平-平腔设计,实现了1.06 μm连续波激光输出,在8 W的注入功率下,获得3.25 W的1.06 μm连续波激光输出,光-光转换效率为41%,斜效率为45%.KTP腔内倍频实现了稳定的连续波532 nm绿光激光运转,当注入功率为8 W时,单向获得了621 mW的单模绿光输出.     

LD端面抽运Nd:YLF/KTA连续光参量振荡激光

采用非临界相位匹配切割,尺寸5mm×5mm×20mm的KTA作为非线性光学晶体,进行了基于半导体激光端面抽运Nd:YLF/KTA的内腔式连续光学参量振荡激光研究,获得了中红外3.5μm波段的连续激光输出。为了提高连续光参量振荡腔内信号光的功率密度,降低激光输出阈值,采用对信号光高反射的单谐振腔结构进行激光实验。在8.35W的抽运功率下,分别获得了335mW和110mW的3440nm和1505nm的激光输出,对应的总转换效率达到了5.6%。该实验研究表明半导体激光端面抽运的内腔式KTA连续光学参量振荡也能获得高效的中红外激光输出。     

调谐激光晶体Cr3+:ZnWO4光致发光特性的研究

研究了调谐激光晶体Ｃｒ³⁺：ＺｎＷＯ₄的光致发光特性。报道了它的吸收光谱、激发光谱、发射光谱及其随温度的变化、零声子跃迁和发射寿命等实验结果，并讨论了激发特性、电子－声子耦合作用、ＺｎＷＯ₄中Ｃｒ³⁺的发射寿命曲线等相关问题。 关键词：     

HfO2/SiO2薄膜的激光预处理作用研究

对电子束蒸发方式镀制的HfO2/SiO2反射膜采用大口径激光进行辐照,采用激光量热计测量了激光辐射前后的弱吸收值。实验发现HfO2/SiO2反射膜在分别采用1 064 nm和532 nm的激光辐照前后薄膜吸收分别从5.4%和1.7%降低到1.4和1.2%。采用聚焦离子束技术分析了激光辐照后薄膜的损伤形态并探究了损伤原因,发现：薄膜在激光辐照下存在节瘤的地方容易出现薄膜损伤,具体表现为熔融、部分喷发、完全脱落3种形态,节瘤缺陷种子来源的差异是导致其损伤机理也存在着巨大差异的主要原因。同时这些节瘤缺陷种子来源也影响着激光预处理作用效果,激光预处理技术对于祛除位于基底上种子形成的节瘤是有效的,原因是激光辐射过后该节瘤进行了预喷发而不会对后续激光产生影响;而激光预处理技术对位于膜层中间的可能是镀膜过程中材料飞溅引起的缺陷是无效的,需要通过飞秒激光手段对该类节瘤进行祛除。     

Tm3+:Ho3+共掺石英光纤激光器的实验研究

用铥钬共掺石英光纤,在钛宝石激光泵浦下,获得了波长为1870 nm、最大功率为240 mW的单模激光输出,斜率效率接近31％这是目前用该类光纤获得的最高转换效率研究了输出激光功率、输出光谱随泵浦功率、激活光纤长度的变化关系,并对相应结果进行了分析     

激光法制备纳米a-SixNy:H的光谱及键结构研究

用红外吸收光谱和喇曼光谱对激光法制备的纳米a-Si_xN_y:H粉末及其加压成形块体的键结构进行研究,发现在a-Si_xN_y:H中存在着Si-N,Si-Si,Si-H,N-H,Si-O-Si及OH基团,讨论了块体及其退火后光谱畸变和键结构变化。 关键词：     

LD端面抽运c切Nd:YVO4自拉曼倍频589 nm黄光激光研究

报道了LD端面抽运c切Nd:YVO₄自拉曼倍频黄光激光器的研究. 采用10 mm长,二类临界相位匹配角 (θ=69°,ø=0°)切割的KTP晶体作为倍频晶体. 考虑到c切Nd:YVO₄跃迁截面较小,所以通过对谐振腔及晶体膜系的严格设计,减少腔内插入损耗和衍射损耗. 最终在脉冲重复率为10 kHz,抽运功率为11.2 W下,获得了最高570 mW的倍频黄光激光输出,对应抽运光到倍频黄光的转化效率约为 关键词： 拉曼激光 c切Nd:YVO₄')" href="#">c切Nd:YVO₄ 589 nm 黄光激光     

Yb:Y2－2xLa2xO3激光透明陶瓷的光谱性能

对一种低温易烧结的Yb:Y_2-2xLa_2xO₃激光透明陶瓷的光谱性能进行了初步研究，Yb:Y_2-2xLa_2xO₃激光透明陶瓷具有宽的吸收带和大的吸收截面，在最强的吸收峰977nm处吸收截面达4.0×10^-20cm²；其荧光发射寿命为1.1ms，发射截面在1033nm处为1.0×10^-20cm²，在1077nm处为0.7×10^-20cm².Yb:Y_2-2xLa_2xO₃陶瓷的各项光学性能指标接近或达到单晶的指标. 关键词： 氧化镧钇 激光陶瓷 低温烧结 光谱性能     

Electrical and electroluminescence properties of ITO/PEDOT:PSS/TPD:Alq3:C60/Al organic light emitting diodes

Organic light emitting diodes (OLEDs) of ITO/PEDOT:PSS/TPD:Alq₃:C₆₀/Al with different C₆₀ concentrations (0-6.0 wt.%) have been fabricated. The physical parameters including electrical and optical properties of the samples have been measured by Luminance-current-voltage (L-I-V) characteristics and optical absorbance. The current-voltage characteristics indicate that field-emission tunneling injection dominates in the diodes at high applied voltages. It is found that with increasing the concentration of C₆₀, the injection barrier for holes slightly reduces and the hole’s mobility increases over two orders of magnitude. Also, electroluminescence enhances with the presence of C₆₀ in the blend; optimum current efficiency occurs at 3 wt% C₆₀. The method provides a simple way of increasing the efficiency of OLEDs.     

VUV-UV luminescence of magnetoplumbite: (Sr0.96−xBa0.04)Al12−yMgyO19:Tbx

The title compounds (Sr_0.96−xBa_0.04)Al_12−yMg_yO₁₉:Tb_x (0<x<0.4; 0<y<0.18) are single-phase magnetoplumbite determined by X-ray powder diffraction analysis. The characteristic emission lines of ⁵D₃→⁷F_j (j=2, 3, 4, 5) and ⁵D₄→⁷F_j (j=4, 5, 6) of Tb³⁺ are recorded under the VUV excitation. The intensive luminescence mainly comes from ⁵D₃→⁷F_j transition when the concentration of Tb³⁺ is low. However, when the concentration of Tb³⁺ starts to increase from very low concentration, ⁵D₄→⁷F_j transition is becoming dominant. Three broad excitation bands at 165, 193 and 233 nm have been observed. The band at 165 nm originates from the overlap between the host absorption and the charge transfer of Tb³⁺-O²⁻. The other two broad bands are the first spin-allowed and the spin-forbidden of 4f-5d transition, respectively. The experimental observation of the 4f-5d transition of Tb³⁺ is consistent well with the theoretical expectations.     

a-Si:H/a-SiNx:H多层膜的皮秒时间分辨光致发光

用时间分辨激光光谱学方法研究了a-Si:H/a-SiN_x:H多层膜光生载流子初始动力学过程,分析了非平衡载流子的热释和复合机制。实验还表明多层膜的发光衰减截止时间、迁移率边和带尾宽度随N含量呈非单调变化规律,转折发生在x=0.85附近,这很可能是由于不同N组份引起多层膜内电场和结构变化的结果。 关键词：     

Ca1−xMo1−ySiyO4:Eux: A novel red phosphor for white light emitting diodes

Single phase of Ca_1−xMo_1−ySi_yO₄:Eu_x³⁺ (0.18?x?0.26, 0?y?0.04) was synthesized by solid-state method. The photoluminescence investigation indicated that Ca_1−xMoO₄:Eu_x³⁺ (0.18?x?0.26) could be effectively excited by 393 and 464 nm, and it exhibited an intense red emission at 615 nm. The introduction of Si⁴⁺ ions did not change the position of the peaks but strongly enhanced the emission intensity of Eu³⁺ under 393 and 464 nm excitations and showed very good color purity. The emission intensity of optimal Ca_0.8Mo_0.98Si_0.02O₄:Eu_0.2³⁺ sample (excited by 393 nm) was about 5.5 times higher than that of the phosphor Y₂O₂S:0.05Eu³⁺. So this phosphor could be nicely suitable for the application of the UV LED chips.     

a-Si:H/a-SiNx:H超晶格的掺杂效应

采用带有可转动掩板的沉积系统,合成出一类新的a-Si:H/掺杂a-SiN_x:H超晶格。样品中各子层厚度及a-SiN_x:H子层中N/Si比固定,仅改变掺杂浓度。结果发现:此类超晶格中的费密能级可以通过a-SiN_x:H层中的掺杂来控制,即a-Si:H/a-SiN_x:H超晶格可以从n型转变为p型,依赖于a-SiN_x:H子层中B的掺杂比。然而,a-SiN_x:H子层中P的掺杂对a-Si:H/a-SiN_x:H超晶格传输特性影响并不大。 关键词：     

非晶态异质结构a-Si:H/a-SiNx:H和a-Si:H,a-SiNx:H薄膜的应力研究

实验发现在一定Si—H键浓度下,相对于平坦的硅衬底而言,在其上沉积的a-Si:H薄膜具有压缩应力,a-SiN_x:H薄膜具有伸张应力。当a-Si:H和a-SiN_x:H层厚度比近似于1:2时,硅衬底上生长的a-Si:H/a-SiN_x:H/c-Si样品,弯曲最小,并能保持很长时间。文中还给出了应力随退火变化的情况,并对实验结果进行了讨论。 关键词：     

变色的ZnS：Mn/SrS：Ce/ZnS：Mn薄膜电致发光的研究

利用ZnS:Mn/SrS:Ce/ZnS:Mn多层结构,得到了一种可变颜色的薄膜电致发光器件。研究了这一器件的发射光谱随电压和频率的变化,并讨论了随电压的增加,发射光谱中蓝带和黄带的不同增长的原因,以及在不同电压下,发射光谱中蓝带和黄带随频率变化的不同趋势的原因。观察到随驱动频率的增加,发射光谱出现黄-蓝色位移。     

Vibrational properties of GexSe1−x glasses: Comments

Recently Nemanich et al. proposed some refinements to the study of vibrational properties of Ge_xSe_1?x glasses we had previously reported. We present a number of arguments which lead to the conclusion that those refinements do not rest on sufficiently sustained proofs.     

A novel UV-emitting phosphor: Li6CaB3O8.5:Pb

Pure Li₆CaB₃O_8.5 and Li₆Ca_1−xPb_xB₃O_8.5 (0.005≤x≤0.04) materials were prepared by a solution combustion synthesis method. The phase of synthesized materials was determined using the powder XRD and FTIR. The synthesized materials were investigated using spectrofluorometer at room temperature. The emission and excitation bands of the synthesized phosphors were observed at 307 and 268 nm, respectively. The dependence of the emission intensity on the Pb²⁺ concentration for the Li₆Ca_1−xPb_xB₃O_8.5 (0.005≤x≤0.04) was studied and observed that the optimum concentration of Pb²⁺ in phosphor is 0.01 mol. The Stokes shift of the synthesized phosphor was calculated to be 4740 cm^-1.     

a-Si:H/a-SiCx:H超晶格的界面特性

报道等离子体化学汽相沉积法制备的ａ－Ｓｉ：Ｈ／ａ－ＳｉＣ：Ｈ超晶格的蓝移现象，用小角度Ｘ射线衍射确定超晶格的界面陡度。通过红外测量和常数光电流测量发现，超晶格界面附近存在较高浓度的Ｈ和较多的Ｓｉ－Ｃ键，界面Ｈ的热稳定性较差，界面缺陷态密度为１．２×１０^１１ｃｍ^-2。 关键词：