国产SiC衬底上利用AIN缓冲层生长高质量GaN外延薄膜

采用高温AlN作为缓冲层在国产SiC衬底上利用金属有机物化学气相外延技术生长GaN外延薄膜.通过优化AlN缓冲层的生长参数得到了高质量的GaN外延薄膜,其对称(0002)面和非对称(1012)面X射线衍射摇摆曲线的半峰宽分别达到130 arcsec和252 arcsec,这是目前报道的在国产SiC衬底上生长GaN最好的...     

Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

GaN epitaxial layers were grown by metalorganic chemical vapor deposition with preheated ammonia as a group V source. The growth rates of GaN epilayers were little affected when ammonia preheater temperature was varied from room temperature to 1000 °C, however, their electrical properties as well as source materials utilization efficiency was significantly improved by using preheated ammonia. GaN epilayers grown with preheated ammonia showed excellent structural and optical properties.     

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained.     

高阻GaN的MOCVD外延生长

利用金属有机化合物气相沉积(MOCVD)在蓝宝石衬底上生长了高阻GaN薄膜。对GaN成核层生长的反应室压力、生长时间和载气类型对GaN缓冲层电学特性的影响进行了分析。实验结果表明,延长GaN成核层的生长时间,降低成核层生长时的反应室压力,载气由H₂换为N₂都会得到高阻的GaN缓冲层。样品的方块电阻R_s最高为2.49×10¹¹ Ω/□。以高阻GaN样品为衬底制备了AlGaN/AlN/GaN结构HEMT器件,迁移率最高达1 230 cm²/(V·s)。     

p型氮化镓的低温生长及发光二极管器件的研究

采用金属有机物化学气相淀积技术(MOCVD)在蓝宝石衬底上低温(870—980℃)生长p型氮化镓 (p-GaN).用Hall测试仪测量材料的电学性能，发现当温度低于900℃时，材料的电阻率较高 ；在900—980℃均可获得导电性能良好的p-GaN.另外，电导性能除与掺杂浓度有关，还与p- GaN生长条件有关，氮镓摩尔比过低导电性能就较差，过高则会引起表面粗糙.采用优化后的 p-GaN制作了绿光发光二极管器件，发现生长温度越低器件发光强度越高，反向电压也越高 ，但正向电压只是略有升高. 关键词： Ⅲ-Ⅴ族半导体 氮化镓 发光二极管 金属有机物化学气相淀积     

Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microscopy. The critical thickness for In_0.67Ga_0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.     

脉冲激光沉积GaN薄膜的结构和光学特性研究

采用准分子脉冲激光,在Si(111)衬底上生长了带有AlN缓冲层的GaN薄膜, 利用X射线衍射(XRD)、原子力显微镜(AFM)和光致发光光谱(PL)等测试手段研究了不同沉积温度所生长的GaN薄膜结构特征和光学性能.研究表明:沉积温度影响GaN薄膜结构和光学性能,黄带发射峰主要与晶体缺陷有关.在400～700℃沉积范围内随着温度升高,GaN薄膜结构和光学性能提高.     

等离子增强原子层沉积低温生长GaN薄膜

采用等离子增强原子层沉积技术在低温下于单晶硅衬底上成功生长了Ga N多晶薄膜,利用椭圆偏振仪、低角度掠入射X射线衍射仪、X射线光电子能谱仪对薄膜样品的生长速率、晶体结构及薄膜成分进行了表征和分析.结果表明,等离子增强原子层沉积技术生长Ga N的温度窗口为210—270?C,薄膜在较高生长温度下呈多晶态,在较低温度下呈非晶态;薄膜中N元素与大部分Ga元素结合成N—Ga键生成Ga N,有少量的Ga元素以Ga—O键存在,多晶Ga N薄膜含有少量非晶态Ga_2O_3.     

MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响

采用金属有机化学气相沉积（MOCVD）技术在Si（111）衬底上外延GaN薄膜,对高温AlN（HT-AlN）缓冲层在小范围内低生长压力（6.7~16.6 kPa）条件下对GaN薄膜特性的影响进行了研究。研究结果表明GaN外延层的表面形貌、结构和光学性质对HT-AlN缓冲层的生长压力有很强的的依赖关系。增加HT-AlN缓冲层的生长压力,GaN薄膜的光学和形貌特性均有明显改善,当HT-AlN缓冲层的生长压力为13.3 kPa时,得到无裂纹的GaN薄膜,其（002）和（102）面的X射线衍射峰值半高宽分别为735 arcsec和778 arcsec,由拉曼光谱计算得到的张应力为0.437 GPa,原子力显微镜（AFM）观测到表面粗糙度为1.57 nm。     

外延在蓝宝石衬底上的非掺杂GaN研究

采用改变生长条件的方法制备GaN薄膜,在(0001)面蓝宝石衬底上利用金属有机物化学气相沉积技术制备了不同样品,并借助X射线双晶衍射仪(XRD)、PL谱测试仪和光学显微镜对材料进行了分析。XRD(0002)面和(1012)面测试均表明TMGa流量为70 cm3/min时样品位错密度最低。利用该TMGa流量进一步制备了改变生长温度的样品。XRD和PL谱测试结果表明,提高生长温度有利于提高GaN样品的晶体质量和光学性能。最后,利用光学显微镜对样品的表面形貌进行了分析。     

GaP layers grown on GaN with and without buffer layers

The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680°C is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH3 , while it turned to be polycrystalline when the substrate is pretreated by TEGa.     

AlGaN/GaN heterostructure grown on 1 -tilt sapphire substrate by MOCVD

AlGaN/GaN epitaxial layers were grown on 0^°-tilt and 1^°-tilt sapphire substrates by metalorganic chemical vapor deposition (MOCVD). With exactly the same growth conditions, it was found that dislocation density was smaller and crystal quality was better for the AlGaN/GaN epitaxial layers prepared on 1^°-tilt sapphire substrate. We also found that AlGaN/GaN epitaxial layers on 1^°-tilt sapphire substrate were grown with step growth mode while those on 0^°-tilt substrate were grown with two-dimensional island growth. From the temperature-dependent mobility, it was found that crystal quality of the AlGaN/GaN epitaxial layer prepared on 1^°-tilt sapphire substrate is better.     

Comparison study of GaN films grown on porous and planar GaN templates

The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition(MOCVD)-GaN template by halide vapor phase epitaxy(HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence(PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.     

SiNx插入层的生长位置对GaN外延薄膜性质的影响

系统研究了纳米量级的多孔 SiNx插入层生长位置对高质量GaN外延薄膜性质的影响.高分辨X射线衍射测量结果表明:SiNx插入层生长在CaN粗糙层上能够得到最好的晶体质量.利用测量结果分别计算出了螺位错和刃位错的密度.此外,GaN薄膜的光学、电学性质分别用Raman散射能谱、低温光致发光能谱和霍尔测量的方法进行了表征.实...     

Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

GaN thin films grown by MOCVD on (0 0 0 1) Al₂O₃ substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.     

使用SiNx原位淀积方法生长的GaN外延膜中的应力研究

采用低压MOCVD系统，在生长过程中使用SiN_x原位淀积的方法产生纳米掩模，并 在纳米掩模上进行选区生长和侧向外延制备了GaN外延薄膜.使用拉曼光谱和光荧光的手段对 GaN外延膜中的残余应力进行了研究.研究发现，用SiN_x原位淀积出纳米掩模后 ，GaN生长将由二维向三维转变，直到完全合并为止.利用拉曼光谱和光荧光谱分别研究了薄 膜中的残余应力，两者符合得很好；这种方法生长出的GaN薄膜的应力分布较传统的侧向外 延更加均匀；并且从中发现随着生长过程中SiN_x原位淀积时间的增加，生长在 其上的GaN外延膜中的残余应力减小.这是因为，随着SiN_x原位淀积时间的增加 ，SiN_x纳米掩模的覆盖度也增大.因此侧向外延区的比例增大，残余应力随之减 小. 关键词： GaN x原位淀积')" href="#">SiN_x原位淀积 拉曼 光荧光 残余应力     

Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization

Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers:(A) a GaN nucleation layer deposited at low temperature(LT);(B) an AlN nucleation layer deposited at high temperature;or(C) an LT thin AlN nucleation layer with an AlN layer and an AlN/AlGaN superlattice both subsequently deposited at high temperature.The samples have been characterized by Xray diffraction(XRD),atomic force microscopy and photoluminescence.The GaN layers grown using nucleation layers B and C show narrower XRD rocking curves than that using nucleation layer A,indicating a reduction in crystal defect density.Furthermore,the GaN layer grown using nucleation layer C exhibits a surface morphology with triangular defect pits eliminated completely.The improved optical property,corresponding to the enhanced crystal quality,is also confirmed by temperature-dependent and excitation power-dependent photoluminescence measurements.     

Polarity control in MBE growth of III-nitrides,and its device application

Until recently, molecular beam epitaxy (MBE) has been behind metalorganic chemical vapor deposition (MOCVD) as a growth technique for III-nitride thin films, due to the lack of nitrogen source powerful enough for the growth in vacuum and the understanding of growth mechanism. We have clarified that the quality of GaN epilayers on sapphire substrates grown by N2 plasma-assisted MBE can be much improved by realizing Ga-polarity growth mode, which enables us to fabricate HFETs using the MBE-grown AIGaN/GaN 2DEG structures. The Ga-polarity growth mode was found to be achieved by Al high temperature buffer process, In flux exposure etc., and directly confirmed by coaxial impact collision ion scattering spectroscopy (CAICISS) technique. The relation between the surface reconstruction structure of GaN epilayers and the lattice polarity of the epilayers is also shown.     

磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响

以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层,采用金属有机化学气相沉积法(MOCVD)外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比,RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛,有利于促进GaN外延的横向生长,减少了形核岛合并时的界面数量和高度差异,降低了缺陷和位错产生的几率。研究结果表明,溅射AlN缓冲层取代传统低温GaN缓冲层后,外延生长的GaN材料具有更高的晶体质量,LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。     

化学气相沉积法制备GaN纳米结构设计性实验

在无催化剂辅助条件下,采用化学气相沉积法生长了GaN纳米线.通过调整衬底、NH3气流、生长时间等,实现了半导体GaN纳米线的生长以及形貌调控.用X射线衍射仪和扫描电子显微镜对产物的物相及形貌进行了表征.获得了合成GaN纳米线的优化条件.