SiNx插入层的生长位置对GaN外延薄膜性质的影响

系统研究了纳米量级的多孔 SiNx插入层生长位置对高质量GaN外延薄膜性质的影响.高分辨X射线衍射测量结果表明:SiNx插入层生长在CaN粗糙层上能够得到最好的晶体质量.利用测量结果分别计算出了螺位错和刃位错的密度.此外,GaN薄膜的光学、电学性质分别用Raman散射能谱、低温光致发光能谱和霍尔测量的方法进行了表征.实...

The Optical and Electrical Properties of GaN Epitaxial Films with SiN_x Interlayers Inserted at Different Position

GaN films with SiN_x interlayer were grown on sapphire substrates by metal organic chemical vapor deposition. The effect of nanoporous SiN_x interlayer growth position on the properties of high-quality GaN epitaxial films was investigated systematically. The high-resolution X-ray diffraction spectra was achieved when a SiN_x interlayer was adopted and inserted on a rough GaN layer. The screw and edge dislocation densities have been calculated. The optical and electrical properties of the GaN films were characterized by Raman scattering spectra, low temperature photoluminescence spectra and Hall measurements, etc. The position of the SiN_x interlayer has no impact on the strain in GaN films,but the residual carrier concentration changes with the position of the interlayer.