1-3型纳米多铁复合薄膜中电场诱导的磁化研究

运用Landau-Devonshire热力学唯像理论,考虑铁电相和铁磁相的电致伸缩、磁致伸缩效应以及产生于铁电/铁磁和薄膜/基底界面的弹性应力作用,两次重整介电和磁作用系数得到了这种多铁系统在Landau自由能函数下的本征二次方磁电耦合形式,从而研究了外延1-3型纳米多铁复合薄膜中极化、磁化随薄膜厚度、温度的变化以及该薄膜中外加电场诱导的磁化变化.结果表明薄膜平面内的应压力的弛豫使得磁化强度和极化强度随薄膜厚度的增加而减少,外加电场不仅能诱导铁电相极化场翻转,而且由于铁电和铁磁相界面竖直方向的弹性耦合导致 关键词： 多铁 磁电效应 磁致伸缩 薄膜     

应力作用下GdTiO_3磁序相变的第一性原理研究

采用基于密度泛函理论的第一性原理方法,系统研究了GdTiO_3薄膜在压缩应力和拉伸应力作用下的磁序相变.计算结果表明:1)在LaAlO_3压缩衬底的作用下,GdTiO_3薄膜从铁磁基态转变为G型反铁磁基态.该结果不同于YTiO_3和LaTiO_3在LaAlO_3压缩衬底作用时都呈现A型反铁磁基态的情况.若进一步加大压缩应力,例如在(001)平面施加YTiO_3衬底,此时GdTiO_3薄膜基态才为A型反铁磁态.2)在LaScO_3和BaZrO_3拉伸衬底的作用下,GdTiO_3薄膜的基态仍是铁磁态,但是随着拉伸应力的增大,A型反铁磁态的能量和铁磁态的能量差逐渐缩小,即GdTiO_3薄膜的基态有转变为A型反铁磁态的趋势.3)在外加应力的作用下,GdTiO_3薄膜基态的磁序发生了相变,但是其绝缘性并没有变,说明GdTiO_3薄膜仍为Mott型绝缘体.     

钙钛矿结构氧化物薄膜 的外延生长

在成功地外延生长超导、铁电、铁磁等多种性质的钙钛矿结构氧化物薄膜的基础上,讨论影响氧化物薄膜 外延生长的一些因素.考虑到相形成和薄膜长征动力学,在利用脉冲激光淀积法外延生长氧化物薄膜中衬底温度是十分重要的工艺参数.衬底温度对成相和生长薄膜的取向都有影响.考虑到薄膜是首先在衬底表面成核、成相并生长.因此衬底材料晶格的影响是不容忽视的.观察到衬底材料对薄膜外延生长温度的影响.在适当的工艺条件下,利用低温三步法工艺制备得到有很强织构的外延薄膜.这突出表明界面层的相互作用对钙钛矿结构薄膜的取向有着相当大的影响. 关键词：     

Nd0.5Sr0.4Pb0.1MnO3的结构和磁性

通过室温下的中子衍射和磁性测量对多晶样品Nd0.5Sr0.4Pb0.1MnO3的结构和磁性进行了实验研究.中子衍射结果表明,该样品具有正交的钙钛矿结构,空间群是Pnma,即结构发生了晶场畸变.由M-T和R-T曲线可知,居里温度TC=273 K,其特征是随着温度的增加样品经历了从铁磁金属态转变到顺磁半导态,且转变温度Tp＝225 K;用锰氧化物晶场和双交换作用的竞争解释了其温度Tp以下的金属特性.     

BaNb_xTi_(1-x)O_3薄膜的电学性质及结构相变(英文)

我们利用激光分子束外延设备(L MBE)在MgO上外延生长了一系列BaNbxTi1-xO3(0 相似文献   

V替代Mn对La_(0.45)Ca_(0.55)MnO_3电荷有序相及自旋玻璃态的影响

用固相反应法制备了La0.45Ca0.55Mn1-xVxO3(x=0.00,0.10)多晶样品.通过X射线衍射谱、质量磁化强度-温度曲线、电子自旋共振谱,研究了V5+替代Mn3+/Mn4+对La0.45Ca0.55MnO3电荷有序相和自旋玻璃态的影响.实验结果表明,当x=0.10时,不仅母体的电荷有序相基本破坏,而且母体在40K左右出现的自旋玻璃态也被融化.电荷有序相被破坏的主要原因是用V5+替代Mn3+/Mn4+后,增加了Mn3+与Mn4+的比例,使铁磁双交换作用优于反铁磁超交换作用;自旋玻璃态的融化是由于V替代Mn后破坏了反铁磁背景下有少量铁磁成分的自旋玻璃态的形成条件.     

La0.33Pr0.34Ca0.33MnO3薄膜的应变效应

采用脉冲激光沉积法分别在(100)LaAlO3和(100)SrTiO3基片上生长了La0.33Pr0.34Ca0.33MnO3 薄膜,并通过磁测量和电输运测量对生长在不同基片上的La0.33Pr0.34Ca0.33MnO3薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La0.33Pr0.34Ca0.33MnO3薄膜容易出现铁磁相,而电荷有序相则被抑制.基片和薄膜之间的张应力则导致La0.33Pr0.34Ca0.33MnO3薄膜容易出现电荷有序相,铁磁相被抑制.导致该现象的可能原因之一是应力使得晶格中Mn-O键角发生改变而引起双交换作用的改变.     

铁磁绝缘体间的极薄Bi2Se3薄膜的相变研究

研究一个极薄三维拓扑绝缘体Bi₂Se₃薄膜处于两个铁磁绝缘体层之间, 其铁磁层的磁化方向都处于竖直平面, 系统拓扑性质随磁化方向夹角的变化. 从表面态电子低能有效哈密顿量出发计算系统的Chern 数, 和运用一个具有Armchair边界的单层六角晶格带的紧束缚模型模拟系统的体能带和边缘态, 来确定系统所处的拓扑相. 发现两个铁磁层的磁化方式从平行转到反平行的某一临界角度, 系统经历从反常量子霍尔相到普通绝缘相的转变.     

Nd0.5Ca0.5Mn0.97Co0.03O3体系的超声研究

系统研究了Nd0.5Ca0.5Mn0.97Co0.03O3单相多晶样品在低温下的电磁性质和超声特性.超声测量结果表明,体系在低温下超声声速出现异常,超声声速从室温开始随着温度的降低逐渐减小,并在220K附近声速达到最小,其相对变化(ΔV/V)超过2%.之后,随着温度的进一步降低,声速急剧硬化,其相对变化达到14.5%.分析表明这是由于体系中电-声子相互作用导致的电荷有序态转变的结果,该电声子耦合来源于Mn3 的JahnTeller效应.同时,该体系在100K左右出现了金属绝缘体转变同时伴随着铁磁相变,分析表明在低温下Co离子与Mn离子之间存在着铁磁交换作用,因此微量的Co掺杂会在反铁磁区域内形成部分铁磁小团簇,当铁磁团簇连通后,体系由反铁磁电荷有序态(AFMCO)向铁磁金属态(FMM)转变.研究结果表明了样品在电荷有序相变温度TCO与金属绝缘体转变温度TMI之间(TMI相似文献   

SrTiO3的外延覆盖对La0.67Ca0.33MnO3/NdGaO3（001）薄膜中电荷有序相调控的影响

具有各向异性外延应变的La0.67Ca0.33MnO3/NdGaO3(001)外延薄膜,经过高温后退火处理可以诱导出电荷有序相,而外延应力场对电荷有序相的诱导机理有待进一步阐明.本文中,我们在La0.67Ca0.33MnO3薄膜上进一步外延SrTiO3覆盖层,以期从不同方面改变薄膜的应变状态.我们发现薄膜上方的应力钳制可改变来自衬底的各向异性应变,从而明显减弱薄膜中的电荷有序相.因此,除衬底外,外延覆盖层同样也可影响薄膜的应变状态、结构和物性.     

Phase diagram and dielectric behavior of Ba0.6Sr0.4TiO3 thin films grown on orthorhombic substrates

Using Landau-Devonshire (LD)-type phenomenological model, we investigate the phase diagrams and dielectric behaviors of single-domain single-crystal Ba_0.6Sr_0.4TiO₃ films deposited on orthorhombic substrates. An anisotropic strain factor is introduced to quantitatively calculate the effects of anisotropic in-plane misfit strains. Investigation indicates that anisotropic strains play a crucial role on formation of stable ferroelectric phases and dielectric properties. The anisotropic strains induce tetragonal phases which only contain one in-plane spontaneous polarization component. These phases do not exist in BST films of the same composition under isotropic strains. Moreover, permittivity and tunability of films can reach to maximum when the corresponding spontaneous polarization component disappears at the boundaries of structural phase transition.     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

Anomalous magnetostrictive effects in （La1—xTbx）2／3Sr1／3 MnO3

A series of (La_{1-x}Tb_x)_{2/3}Sr_{1/3}MnO_3 polycrystalline samples has been studied by means of x-ray diffraction, magnetostriction, and thermal expansion measurements. It has been found that this series undergoes a phase transition from a rhombohedral to an orthorhombic form at the doping level x≈0.20 at room temperature accompanied by an anisotropic magnetostriction up to －50×10^{-6} under a magnetic field of 1T. The linear and volume magnetostrictions vary with chemical composition, even change sign. At T=80K, the magnetostrictions for the samples of x=0.20 and 0.40 exhibit different behaviours. The sample of x=0.20 has positive volume and linear magnetostrictions and a negative anisotropic magnetostriction, while the sample of x=0.40 has an opposite behaviour. The magnitude of volume magnetostriction for both the samples is essential (～10^{-4}) at T=80K under a magnetic field of 4T. We conclude that these anomalous effects are due to the charge delocalization and the structural phase transition between orthorhombic and rhombohedral forms induced by the applied magnetic field.     

Pressure-induced structural change in orthorhombic perovskite GdMnO3

Structural stability of the perovskite-type GdMnO(3) has been investigated by the synchrotron angle-dispersive x-ray diffraction technique up to 63 GPa in a diamond anvil cell. GdMnO(3) stays in an orthorhombic structure but undergoes an isostructural phase transition with ~5% volume reduction at 50 GPa. In the parent orthorhombic phase, the compressions along a, b and c axes exhibit a large anisotropic behavior. With increasing pressure, our results show that the distortion and tilts of the MnO(6) octahedra are reduced continuously and the orthorhombic structure evolves towards higher symmetry. By fitting the observed pressure-volume data using the third-order Birch-Murnaghan equation of state, we obtain the bulk modulus B(0) = 156(3) GPa with B(0)' = 6.5(3) for the starting orthorhombic phase. Upon decompression, the starting orthorhombic phase is recovered.     

Crystal structure of (La,Ca)MnO3 ultrathin films deposited on SrTiO3 substrates

Epitaxial La_1?x Ca _x MnO₃ (x???0.33) ultrathin films with thickness between 3 and 6?nm have been grown on (001) SrTiO₃ substrates by sputter deposition. The films do not exhibit an insulator-metal transition as a function of temperature, which is normal in thicker films. High-resolution transmission electron microscopy and electron diffraction were used to investigate the crystal structure. It was found that the films grow coherently on the substrates and are perfectly crystalline. Their crystal structure was determined to be a body-centred orthorhombic structure with space group Imma, instead of the orthorhombic Pnma bulk structure. This structure change is probably responsible for the insulating property of the films.     

Phase transitions in epitaxial (-110) BiFeO3 films from first principles

The effect of misfit strain on properties of epitaxial BiFeO3 films that are grown along the pseudocubic [110] direction, rather than along the usual [001] direction, is predicted from density-functional theory. These films adopt the monoclinic Cc space group for compressive misfit strains smaller in magnitude than ?1.6% and for any investigated tensile strain. In this Cc phase, both polarization and the axis about which antiphase oxygen octahedra tilt rotate within the epitaxial plane as the strain varies. Surprisingly and unlike in (001) films, for compressive strain larger in magnitude than ?1.6%, the polarization vanishes and two orthorhombic phases of Pnma and P2(1)2(1)2(1) symmetry successively emerge via strain-induced transitions. The Pnma-to-P2(1)2(1)2(1) transition is a rare example of a so-called pure gyrotropic phase transition, and the P2(1)2(1)2(1) phase exhibits original interpenetrated arrays of ferroelectric vortices and antivortices.     

Structure of ferromagnetic CrAs epilayers grown on GaAs(001)

Magnetic and structural properties of CrAs epilayers grown on GaAs(001) by molecular beam epitaxy have been studied. CrAs epilayers are orthorhombic for all thicknesses investigated but show a structural transition from a metastable phase for very thin films, to the usual bulk MnP-type orthorhombic phase at higher thicknesses. At intermediate thicknesses, there is a predominance of the new phase, although a contribution from the usual CrAs bulk phase remains clearly present. These results strongly suggest that the ferromagnetic signal measured at room temperature comes from the new metastable orthorhombic structure with an expanded b-axis induced by the substrate strain.     

Dielectric and piezoelectric properties of(110) oriented Pb(Zr_(1-x)Ti_x)O_3 thin films

A phenomenological Landau–Devonshire theory is developed to investigate the ferroelectric, dielectric, and piezoelectric properties of(110) oriented Pb(Zr_(1-x)Ti_x)O_3(x = 0.4, 0.5, 0.6, and 0.7) thin films. At room temperature, the tetragonal a_1 phase, the orthorhombic a_2c phase, the triclinic γ_1 phase, and the triclinic γ_2 phase are stable. The appearance of the negative polarization component P_2 in the a_2c phase and the γ_1 phase is attributed to the nonlinear coupling terms in the thermodynamic potential. The γ phase of the Pb(Zr_(1-x)Ti_x)O_3 thin films has better dielectric and piezoelectric properties than the a_2c phase and the a_1 phase. The largest dielectric and piezoelectric coefficients are obtained in the Pb(Zr_(0.5)Ti_(0.5))O_3 thin film. The piezoelectric coefficient of 110–150 pm/V is obtained in the(110) oriented Pb(Zr_(0.5)Ti_(0.5))O_3 thin film, and the Pb(Zr_(0.3)Ti_(0.7))O_3 thin film has the remnant polarization and relative dielectric constant of 50 μC/cm~2 and 100, respectively,which are in agreement with the experimental measurements reported in the literature.     

Growth and structural characterization of YMnO3 thin films grown by pulsed liquid injection MOCVD on Si and SrTiO3 substrates

Optimum parameters for the growing of YMnO₃ films by pulsed liquid injection metalorganic chemical vapor deposition have been studied. Si substrates were used for the optimization of the deposition process. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that polycrystalline single phase YMnO₃ films can be obtained for an optimal ratio of Y and Mn on the injected solution and either amorphous, metastable orthorhombic, and/or hexagonal YMnO₃ phases can be obtained depending on the deposition temperature and precursors ratio. In a second stage, YMnO₃ films were grown on SrTiO₃ substrates. Pure epitaxial orthorhombic YMnO₃ phase was confirmed by XRD. The films microstructure, characterized by scanning electron microscopy and TEM, shows a columnar growth. Each columnar grain grows epitaxially with three possible orientations.     

退火处理对YMnO3薄膜的结构和荧光性能的影响

室温下,采用脉冲激光沉积方法在Si(100)衬底上制备了YMnO3薄膜,并对其进行了不同温度的退火处理。采用X射线衍射和荧光光谱分析方法对薄膜的结构和荧光特性进行了研究。结果表明:通过退火处理,可以得到正交相和六方相共存的多晶态YMnO3薄膜,并且随着退火温度的升高,两相的比例发生变化,由正交相为主转变为六方相为主。YMnO3薄膜样品的荧光发射峰集中在波长430～620nm范围内,可能是由Mn3 离子从5T2到5E之间的能级跃迁所引起的。其荧光强度随着退火温度的升高逐渐增强,但峰位基本保持不变,说明薄膜结构的改变对Mn3 离子的能级跃迁几率有明显的影响,对能级位置的影响不大;而且荧光光谱还显示在同一薄膜中各个荧光峰的相对强度随着退火温度的变化不大。