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用数值方法研究了拓扑绝缘体薄膜体系在外加垂直磁场 作用下其边缘态的性质. 磁场的加入通过耦合k+eA, 即Peierls势替换关系和 该作用导致的Zeeman交换场体现在哈密顿量中. 考虑窄条圆环状结构的二维InAs/GaSb/AlSb薄膜量子阱材料, 当其处于拓扑非平庸状态, 即量子自旋霍尔态时, 会出现受时间反演对称性保护的两支简并边缘态, 而在垂直磁场的作用下, 时间反演对称性被破坏, 这时能带将形成一条条的朗道能级, 原来简并的两支边缘态也会分开到朗道能级谱线的两侧, 从电子态密度的空间分布情况则可以看到边缘态分别局域在材料的两个边界. 随着磁场的增大, 位于同一边界上的不同 自旋极化的边缘态将出现分离: 一支仍然局域在边缘, 另一支则随外加磁场的增加而有逐渐演化到材料内部的趋势. 文中还计算了同一边界上的两支边缘态之间的散射, 结果表明由于两个边缘态在空间发生分离, 相互之间的散射被很大的压制, 得到了其散射随磁场增加没有明显变化的结论, 所以磁场并不会增强散射过程, 也没有破坏体拓扑材料的性质, 说明了量子自旋霍尔态在没有时间反演对称的情况下也可以有较强的稳定性. 相似文献
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"石墨电子结构和输运特性"专题研讨会于2008年4月11-13日在山东青岛举行,会议由复旦大学物理系,南京大学物理系和青岛大学物理学院联合主办,受到国家自然科学基金委及国家量子调控重大科学研究计划(2006CB921800)资助. 相似文献
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采用直接动力学的方法,对多通道反应体系Br+CH3S(O)CH3进行了理论研究.在BH&H-LYP/6-311G(2d,2p)水平下获得了优化几何构型、频率及最小能量路径(MEP),能量信息的进一步确认在MC-QCISD(单点)水平下完成.利用正则变分过渡态理论,结合小曲率隧道效应校正(CVT/SCT)方法计算了该反应的两个可行的反应通道在200K~2000K温度范围内的速率常数.在整个反应区间内,生成HBr的反应通道与生成CHa的反应通道存在着竞争,前者是主反应通道,后者是次反应通道.变分效应和小曲率隧道效应对反应速率常数的计算影响都很小.理论计算得到的两个反应通道的反应速率常数与实验值符合得很好. 相似文献
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The quantum spin Hall (QSH) effect is considered to be unstable to perturbations violating the time-reversal (TR) symmetry. We review some recent developments in the search of the QSH effect in the absence of the TR symmetry. The possibility to realize a robust QSH effect by artificial removal of the TR symmetry of the edge states is explored. As a useful tool to characterize topological phases without the TR symmetry, the spin-Chern number theory is introduced. 相似文献
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Unified semiclassical approach to electronic transport from diffusive to ballistic regimes 下载免费PDF全文
We show that by integrating out the electric field and incorporating proper boundary conditions,a Boltzmann equation can describe electron transport properties,continuously from the diffusive to ballistic regimes.General analytical formulas of the conductance in D = 1,2,3 dimensions are obtained,which recover the Boltzmann–Drude formula and Landauer–B ¨uttiker formula in the diffusive and ballistic limits,respectively.This intuitive and efficient approach can be applied to investigate the interplay of system size and impurity scattering in various charge and spin transport phenomena,when the quantum interference effect is not important. 相似文献
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The Chern number is often used to distinguish different topological phases of matter in two-dimensional electron systems. A fast and efficient coupling-matrix method is designed to calculate the Chern number in finite crystalline and disordered systems. To show its effectiveness, we apply the approach to the Haldane model and the lattice Hofstadter model, and obtain the correct quantized Chern numbers. The disorder-induced topological phase transition is well reproduced, when the disorder strength is increased beyond the critical value. We expect the method to be widely applicable to the study of topological quantum numbers. 相似文献
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A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled,the proposed spin current switching effect may have potential applications in future spintronics. 相似文献