电子辐照下GaAs/Ge太阳电池载流子输运机理研究

通过地面模拟辐照试验获得不同能量电子辐照下GaAs/Ge太阳电池电学参数退化的基本规律, 在此基础上使用PC1 D模拟程序分析太阳电池内部的载流子输运机理, 建立不同能量的电子辐照下GaAs/Ge太阳电池中多数载流子浓度和少数载流子扩散长度随辐照粒子注量变化的基本规律. 研究结果表明: 多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小, 多数载流子去除率和少数载流子扩散长度损伤系数均随电子能量的增高而增大, 多数载流子去除效应和少数载流子扩散长度缩短分别是电池开路电压和短路电流退化的主要原因.     

HgCdTe红外探测器离子注入剂量优化研究

在中波响应波段的p型Hg_0.709Cd_0.291Te(MCT)分子束外延生长薄膜上，利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积(500μm×500μm)的n-op-p结.通过测量液氮温度下不同离子注入剂量单元的电流-电压特性和对零偏微分电阻R₀分析，观测到p-n结的性能与硼离子注入剂量明显的依赖关系.在另一片薄膜材料(镉组分值为0.2743)上通过该方法获得R₀A优于现有常规数值的探测器单元. 关键词： p-n结 离子注入 碲镉汞薄膜     

高增益砷化镓光导开关中的光致电离效应

研究了光致电离在高增益本征砷化镓(GaAs)光导开关(PCSS)中的效应.在高增益本征砷化镓光导开关中,各级流注发展由三个过程组成:光致电离、畴电子崩(DEA)和载流子碰撞电离雪崩生长.光致电离在本征砷化镓绝缘区中产生局部高载流子密度区域,提供了允许畴存在的局域环境.光致电离包括激光触发和流注的复合辐射两种情形.分析了光导开关的最优触发激光条件.通过计算机数值模拟,计算了在距离流注表面y≤30 μm的范围内,平均光生载流子密度n(t=0)乘以该局域的特征尺度满足偶极畴成核条件:n(t=0)·y>1012 cm-2;探讨了流注的复合辐射在流注周围产生非平衡载流子的规律;发现了触发区域沿电场方向的长度阈值LEC,触发区域的特征长度LE必须满足条件:LE≥LEC.     

硅中硼离子注入的带电缺陷动力学模拟

为准确描述硼离子注入硅后缺陷/杂质的动力学物理过程,获得硼浓度空间分布及其演化行为,构建一个跨尺度带电缺陷动力学模型,考虑离子注入缺陷的产生及其演化的多种微观过程,包括缺陷电荷态和带电缺陷间的反应、硼-自间隙团簇（BICs）演化以及缺陷与载流子相互作用等物理过程。模拟得到与实验一致的硼浓度深度分布。结果表明：BICs对硼浓度的深度分布起主要作用,而间隙硼（B_I）导致硼浓度分布向深处扩展;计及缺陷的不同电荷态修正自间隙（I）和硼间隙（B_I）的扩散系数,从而更准确地描述硼浓度分布。模型揭示了硼离子注入硅发生的物理过程和微观机理,证明BICs和缺陷真实的电荷态是描述硼浓度分布的重要因素,为半导体器件制造与研发提供理论指导。     

激光束诱导电流法提取HgCdTe光伏探测器的电子扩散长度

由于得到HgCdTe扩散长度L_p的标准测试结构会损伤p-n结单元,实验中广泛采用激光束诱导电流（LBIC）提取的等效扩散长度L来代替L_p.本文通过二维数值模拟,分析了等效扩散长度L和扩散长度L_p 的关系.二者的比例关系为L/L_p=1.1,该基本关系不受器件的关键参数如掺杂浓度、载流子寿命、载流子迁移率等的影响.最后将激光束 关键词： 碲镉汞 激光束诱导电流 扩散长度     

电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用

论述了一种利用硅太阳能电池在一定偏压下的电致发光(Electroluminescence,EL)成像来检测硅太阳能电池隐性缺陷的方法.硅太阳能电池的EL波长范围为850～1 200 nm.正向偏压下的EL光强反映了少数载流子的浓度及其扩散长度,而反向偏压下的EL区和发光强度对应于电池的缺陷区域和缺陷密度.用硅CCD相机...     

载流子穿越具有双Mot势垒的半导体晶界的输运行为

讨论了穿越具有双Mot势垒的n型半导体晶界的载流子输运行为，重点分析了受主缺陷扩散层对偏压下晶界势垒、直流电流、非线性特性和电容等的作用．晶界势垒在偏压下的变化决定了载流子穿越晶界的输运行为分为预击穿、击穿和回复三个区域．受主缺陷扩散层的存在改变了势垒及其偏压关系，使电流的变化和非线性特性大幅度加强，很大程度上决定了预击穿区的漏电流；同时也使势垒加宽而减小高频电容，但使直流偏压下因晶界电荷的共振响应而产生的电容峰值增大 关键词：     

离子注入诱导量子阱界面混合效应的光致荧光谱研究

采用多元芯片方法获得了一系列不同离子注入剂量的GaAsAlGaAs非对称耦合量子阱单元,通过光致荧光谱测量,研究了单纯的离子注入导致的界面混合效应.荧光光谱行为与有效质量理论计算研究表明,Al原子在异质结界面的扩散在离子注入过程中已基本完成,而热退火作用主要是去除无辐射复合中心. 关键词： 量子阱 离子注入 光致荧光谱 界面混合     

用面垒探测器测定n型硅中少数载流子的扩散长度

当α粒子穿入Au-Si面垒探测器的扩散区时,其产生的非平衡少数载流于扩散到势垒边界而被收集,因此在探测器两端有一输出脉冲。本文从理论上计算了扩散区中的收集效率,获得了收集效率和扩散长度的函数关系。另外将实验上测定的收集效率与理论加以比较,从而确定少数载流子的扩散长度。 关键词：     

利用W形空穴阻挡层降低AlGaN基深紫外激光二极管的空穴泄露

本文设计了V形和W形的空穴阻挡层(HBL)结构,改善空穴在AlGaN基深紫外激光二极管(DUV-LD)n型区的泄露问题.使用Crosslight软件,将参考型矩形、V形和W形三种空穴阻挡层结构进行仿真研究,分别比较了三种不同结构的DUV-LD能带、n区空穴浓度、辐射复合率、电光转换效率、有源区载流子浓度等特性,结果表明,具有W形空穴阻挡层的DUV-LD拥有更高的空穴有效势垒高度、更高的辐射复合率、更低的空穴泄露以及更好的斜率效率,可以有效降低深紫外激光二极管在n型区的空穴泄露,提升其光学和电学性能.     

A high-speed particle-detection in a large area using line-laser light scattering

We study the optical characteristics of a home-built line-laser surface light scattering system that detects sub-micron scale irregularities on a large area in high speeds. The sensitivity of the detection system, i.e. signal to noise (STN) ratio, is found to depend strongly on the detection angle. We find an optimal detection angle at 30°, at which STN ratio is maximized for 2500 nm silica particles on wafer surface. Experimental results of scattering intensity measurements from a smooth surface and from surfaces with spherical irregularities are in excellent agreement with corresponding theoretical model calculations. The line scan speed can be as high as ∼17 mm/s, while identifying the presence of a particle as small as 700 nm in a pixel area (∼15 μm × ∼17 μm). The presence of irregularities found by the line scan system is confirmed by confocal laser-scanning microscopy imaging. Due to unique advantages such as non-disruptiveness, high-speed over large area, and high sensitivity, this line scan system may be used as a surface inspection system that meets the requirements of recent flat panel display manufacturing environments.     

CCD交汇测量系统优化设计的建模与仿真

为了得到最佳的坐标测量精度，本文针对线阵ＣＣＤ交汇测量系统的结构参数进行优化设计。首先建立了优化设计的数学模型，然后用计算机进行仿真，得出了在不同靶面下满足要求的最优结构参数，并给出了靶面误差分布的三维图。     

Nanoscale structuring of SrRuO3 thin film surfaces by scanning tunneling microscopy

Surface modifications through line etching of SrRuO₃ thin films have been carried out using a scanning tunneling microscope under ambient conditions. The line etching is found to be dependent on both bias voltage and scan speed for a given number of scan repetitions. We observe that an applied voltage above a threshold value is required for successful line etching. The depth of the etched lines is increasing with increasing bias voltage and scan repetitions as well as with decreasing scan speed. Moreover, sub-50 nm laterally confined mesa structures could be reproducibly etched on the SrRuO₃ thin film surfaces.     

Electron emission characteristics of the porous polycrystalline silicon diode

It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol=1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.     

基于THz光谱成像的纸币真伪鉴别研究

根据纸币防伪特征区域载体材料与制作工艺的不同,利用透射式太赫兹脉冲成像技术对2005版真伪百元人民币的白水印和安全线两处防伪特征区域进行逐点扫描获取相应的太赫兹时域信号,然后对太赫兹波形进行数据处理获得时域显示模式成像及频域显示模式成像。将真钞和假钞的成像结果进行对比,发现白水印、安全线部位的真假钞成像结果区别明显,证实太赫兹脉冲成像技术能够真实、有效地对真假人民币进行多区域、多维度的准确鉴定。     

Auger electron spectroscopy and leed studies of adsorption isotherms: Xenon on (0001) graphite

The passivation mechanism and related natures of silicon surfaces with a very thin natural oxide film baked at low temperature and low pressure (≤ 600°C, 1–5 × 10^?6Torr) was studied principally by the measurement of ESR absorption. Two sorts of resonance lines, which are called the broad and the narrow line hereafter, were observed in the dark by vacuum baking after introducing air. Paramagnetic centers responsible for the broad line have a one-to-one correspondence to such surface states at the silicon-silicon oxide interface that have an electrically amphoteric nature. The narrow line with an intense g-anisotropy originated from trivalent silicons. These ESR lines interact very sensitively with atmospheric gases such as water and oxygen. In addition, light illumination induced two ESR lines different from those observed in the dark. The electron trapped at the surface state forms an intrinsic layer at the surface of n-type silicon. It has been confirmed by present ESR experiments and surface conductance measurements that the passivation effects of this surface to various atmospheric ambients such as water vapor results from the existence of an intrinsic layer at the surface of n-type silicon.     

Addressable discrete-line-scanning multiphoton microscopy based on a spatial light modulator

We developed a novel addressable discrete-line-scanning multiphoton microscope with high lateral and axial resolutions based on a spatial light modulator. Our discrete-line-focus design eliminates the cross talk that occurs in conventional one-dimensional line-scanning multiphoton microscopies. Additionally, a phase-only spatial light modulator is able to scan only a sample's target area by generating a specific discrete line focus according to the shape and location of the target area. Compared with other multiphoton microscopies, this technique shortens scanning time and minimizes photodamage by concentrating scanning energy and dwell time on the area of interest.     

Structural, electrical and optical characterization of InGaN layers grown by MOVPE

We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy(MOVPE) on GaN template/(0001) sapphire substrate.An investigation of the different growth conditions on n-type InxGa1 xN(x = 0.06 0.135) alloys was done for a series of five samples.The structural,electrical and optical properties were characterized by high resolution x-ray diffraction(HRXRD),Hall effect and photoluminescence(PL).Experimental results showed that different growth conditions,namely substrate rotation(SR) and change of total H2 flow(THF),strongly affect the properties of InGaN layers.This case can be clearly observed from the analytical results.When the SR speed decreased,the HRXRD scan peak of the samples shifted along a higher angle.Therefore,increasing the SR speed changed important structural properties of InGaN alloys such as peak broadening,values of strain,lattice parameters and defects including tilt,twist and dislocation density.From PL results it is observed that the growth conditions can be changed to control the emission wavelength and it is possible to shift the emission wavelength towards the green.Hall effect measurement has shown that the resistivity of the samples changes dramatically when THF changes.     

Miniature 10 kHz thermo-optic delay line in silicon

The scanning delay line is a key component of time-domain optical coherence tomography systems. It has evolved since its inception toward higher scan rates and simpler implementation. However, existing approaches still suffer from drawbacks in terms of size, cost, and complexity, and they are not suitable for implementation using integrated optics. In this Letter, we report a rapid scanning delay line based on the thermo-optic effect of silicon at λ = 1.3 μm manufactured around a generic planar lightwave circuit technology. The reported device attained line scan rates of 10 kHz and demonstrated a scan range of 0.95 mm without suffering any observable loss of resolution (15 μm FWHM) owing to depth-dependent chromatic dispersion.