高活性氧化亚铜薄膜材料的绿色合成研究（英文）

本文采用一步脉冲雾化化学气相沉积法在250℃下制备了氧化亚铜薄膜催化剂.实验研究了前驱体中掺杂水对氧化铜薄膜表面形貌、拓扑结构、表面成分和光学特性的影响规律.结果表明所制得的催化剂为纯相的氧化亚铜.前驱体溶液中掺杂水会导致氧化亚铜的晶粒变小,从而使得共光学能隙从2.16 eV降至2.04 eV.原子力显微镜结果表明随着水的加入,氧化亚铜的表面粗糙度降低,表面更加均匀.此外,利用密度泛函理论计算得到了水和乙醇在氧化亚铜薄膜表面的吸附和反应特性,并提出了氧化亚铜的形成机理.本文开发了一种低成本且实际可行的薄膜制造方法,该方法在太阳能电池和半导体等领域具有潜在应用.     

Ni掺杂ZnO薄膜的结构与光学特性研究

使用射频磁控溅射法成功制备了不同掺杂浓度（0—7at.%）的ZnO:Ni薄膜.X射线衍射的θ-2θ和摇摆曲线扫描结果表明,5at.%Ni掺杂ZnO薄膜具有沿c轴方向最佳的择优取向生长特性,（002）衍射峰向大角度方向移动揭示了Ni杂质被掺入ZnO晶格中占据Zn位.ZnO:Ni薄膜具有较好的可见光透明特性,拟合发现薄膜的光学带隙随Ni掺杂量的增加由3.272 eV线性降低到3.253 eV.未掺杂薄膜在550 nm处呈现出一个绿色发光峰,掺入Ni杂质后薄膜主要表现了以430 nm为中心的蓝色发光,分析认为它们分别源于薄膜中O空位和Zn填隙缺陷发光. 关键词： ZnO:Ni薄膜 结构特性 光学带隙 光致发光     

溅射制备Ge,Nb共掺杂窄光学带隙和低电阻率的TiO2薄膜

采用射频磁控溅射技术制备了Ge,Nb共掺杂的锐钛矿结构TiO₂薄膜,详细探讨了薄膜的结构、电阻率及光学带隙等性质随Ge,Nb掺杂量、溅射功率和热处理温度等参数的变化,发现Ge,Nb共掺杂可以同时调节TiO₂薄膜的光学带隙和电阻率.体积分数约为6%Nb和20%Ge的共掺杂TiO₂薄膜电阻率由10⁴Ω/cm减小至10^-1Ω/cm,光学带隙由3.2 eV减小至1.9 eV.退火后掺杂TiO₂薄膜不仅显示更低的电阻率,还表现出更强的可见-红外光吸收.结果表明,改变Ge,Nb的掺杂量和退火条件能够制备出电阻率和带隙都可调的TiO₂薄膜.     

Ag掺杂对ZnO薄膜的光电性能影响

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体,以硝酸银水溶液为Ag掺杂源,以高纯O2为载气生长了Ag掺杂ZnO(ZnO∶Ag)薄膜。研究了Ag掺杂ZnO薄膜的表面结构、电学和光学性质。结果表明所得ZnO∶Ag薄膜表面结构良好,扫描电子显微镜(SEM)测试表明薄膜表面光滑平整,结构致密均匀;在室温光致发光(PL)光谱中检测到很强的近带边紫外发光峰;透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率,表明薄膜具有较高的晶体质量与较好的光学特性;霍尔效应测试表明,在550℃下获得了p型导电的ZnO∶Ag薄膜。     

Zn掺杂β-Ga2O3薄膜的制备和特性研究（英文）

β-Ga2O3是一种宽带隙半导体材料,能带宽度Eg≈5.0eV,在光学和光电子学领域有广泛的应用.用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜,用紫外-可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响.退火后的β-Ga2O3薄膜为多晶结构,与本征β-Ga2O3薄膜相比,Zn掺杂β-Ga2O3薄膜的β-Ga2O3(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°.退火后的Zn掺杂β-Ga2O3薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强.表明退火后Zn掺杂β-Ga2O3薄膜中的Zn原子被激活充当受主.     

原子层沉积制备铱薄膜的特性研究

以乙酰丙酮铱[Ir(acac)3]和高纯氧为前驱体,采用原子层沉积(ALD)方法在基板温度为340℃的石英玻璃和硅基板上制备了金属铱薄膜。采用反射光谱测试仪、X射线电子能谱(XPS)、X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)等手段对不同厚度薄膜的微结构、表面形貌和光学性能进行了研究。结果表明,原子层沉积制备的Ir薄膜中元素纯度较高(大于95%),表面粗糙度低,并呈现多晶纳米颗粒。同时,Ir薄膜在紫外波段表现出较好的光学特性,可以用于制作Ir金属紫外光栅等光学器件。     

In掺杂氮化亚铜薄膜的电学、光学和结构特性研究

采用射频磁控溅射方法, 在低功率和低温条件下利用纯氮气作为反应溅射气体制 备出不同In含量的三元氮化物Cu_xIn_yN薄膜. 研究发现In掺杂浓度对薄膜微结构、形貌、表面化学态以及光学特性有灵敏的调节作用. 光电子峰、俄歇峰、俄歇参数的化学位移变化从不同角度揭示了不同含量In掺杂引 起的原子结合情况的变化. XPS结果显示In含量小于8.2 at.%的样品形成了Cu-In-N键. 对In含量为4.6 at.%的样品进行XRD和TEM结构测试, 实验结果肯定了In原子填充到Cu₃N的反ReO₃结构的体心位置. 并且当In含量增至10.7 at.%时, 薄膜生长的择优取向从之前占主导地位的(001)方向转变为(111)方向. 此外, 随着In含量的增加, 薄膜的R-T曲线从指数形式变为线性. 当In含量为47.9 at.%时, 薄膜趋于大温区恒电阻率材料, 电阻温度系数TCR仅为-6/10000. 光谱测量结果显示In摻杂使得氮化亚铜掺杂薄膜的光学帯隙从间接帯隙变为直接帯隙. 由于Burstein-Moss效应, 帯隙发生蓝移, 从1.02 eV 到2.51 eV, 实现了帯隙连续可调. 关键词： 三元氮化物 薄膜 光学特性 氮化亚铜     

钼掺杂氧化锌薄膜的结构、光学和表面等离子体特性研究

室温下,通过直流磁控反应溅射在石英衬底上制备一系列钼掺杂氧化锌薄膜。分别采用X射线衍射(XRD)、原子力显微镜(AFM)、分光光度计及拉曼光谱仪研究了钼掺杂浓度对氧化锌薄膜结构、表面形貌、光学性能和表面等离子体特性的影响。XRD测试结果表明,零掺杂氧化锌薄膜结晶良好,呈c轴择优取向,掺杂后薄膜缺陷增多,结晶质量下降,当掺杂浓度达到3.93 Wt%时,薄膜由c轴择优取向的晶态转变为非晶态。AFM测试结果表明非晶态掺钼氧化锌薄膜表面光滑,粗糙度最低可达489 pm。透射光谱表明所有薄膜样品在可见光范围(400～760 nm)平均透过率均达到80%,禁带宽度随着掺杂浓度的提高从3.28 eV单调增加至3.60 eV。吸收光谱表明氧化锌薄膜表面等离子体共振吸收峰随钼掺杂量的增大发生蓝移,而拉曼光谱表明Mo重掺杂时ZnO薄膜表面拉曼散射信号强度显著降低。通过Mo掺杂获得非晶态氧化锌薄膜,拓宽了氧化锌薄膜材料的应用领域,同时研究了Mo掺杂浓度对氧化锌薄膜表面等离子体的调控作用,这对制备氧化锌基光子器件具有重要参考价值。     

真空闪蒸法制备钙钛矿薄膜的光学性质研究

近年来,以有机无机杂化铅卤钙钛矿为吸光层的薄膜太阳能电池受到了广泛的关注,不到十年时间其光电转换效率已经从3.8%提高到了23%,这主要归因于有机铅卤钙钛矿材料光吸收系数高,带隙合适并易于调控,电子-空穴扩散长度长等优点。2016年Gr?tzelL等人利用低气压快速去除薄膜前驱体溶剂的方法,获得了高质量的甲脒和溴离子掺杂钙钛矿薄膜。相比于其他传统的溶液制备方法,这种方法能够很好的解决大面积均匀性的问题,为高效率、大面积钙钛矿太阳电池产业化提供了可能。钙钛矿薄膜的成份、结构及其光学性能对于太阳电池的器件性能起决定性作用,因此在该制备技术下,研究不同掺杂种类钙钛矿薄膜对光学性质的影响具有积极的意义。利用真空闪蒸溶液技术制备了3种成分的钙钛矿薄膜,利用扫描电镜、 X射线衍射,吸收光谱和荧光光谱等表征手段对薄膜的形貌、结构和光学性质进行了研究。结果表明,该技术可以用于制备均匀致密、无针孔的高质量甲脒、溴离子掺杂和氯离子掺杂的钙钛矿薄膜(成分分别为(FAPbI3)0.85(MAPbBr3)0.15,MA3PbI3和MAPb(IxCl1-x)3),薄膜中晶粒的尺寸分别为500, 100和200 nm左右;薄膜的形成过程为溶剂中的DMSO与钙钛矿配位,并在真空闪蒸过程中快速形成相对稳定中间相,经过加热后,薄膜中的DMSO被去除并形成钙钛矿晶体,结构为四方相;甲脒、溴离子和氯离子掺杂的薄膜对可见光有强烈的吸收作用,薄膜吸收边均在750 nm左右;薄膜的掺杂对带隙宽度没有明显影响, 3种成份的薄膜带隙宽度位于1.6 eV左右;甲基胺碘化铅的荧光发射峰在765 nm,甲脒和溴离子掺杂后发光峰位红移至774 nm,氯离子掺杂后薄膜峰位处于761 nm,有微弱的蓝移,且强度出现下降。这可能是晶粒尺寸和薄膜内部缺陷变化导致的。     

原子层沉积制备Ta_2O_5薄膜的光学特性研究

以乙醇钽[Ta(OC2H5)5]和水蒸气为前驱体,采用原子层沉积(ALD)方法分别在基板温度为250℃和300℃的K9和石英衬底上制备了Ta2O5光学薄膜。采用分光光度计、X射线光电子能谱(XPS)、X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)等手段对薄膜的光学特性、微结构和表面形貌进行了研究。结果表明,用ALD方法制备的Ta2O5薄膜在刚沉积和350℃退火后均为无定形结构,而250℃温度下沉积的薄膜其表面粗糙度低,聚集密度很高,光学均匀性优,在中紫外到近红外均表现出很好的光学特性,可以作为高折射率材料很好地应用于光学薄膜中。     

Effect of deposition temperature on key optoelectronic properties of electrodeposited cuprous oxide thin films

The cuprous oxide (Cu₂O) thin films were electrodeposited with different reaction temperatures. The structural, morphological, optical, photoluminescence and photo response properties of the deposited films were analyzed. XRD analysis reveals cubic crystal structure for the deposited films with polycrystalline nature. The film deposited at room temperature possess high crystallite size of 37 nm. The surface morphology shows that by increasing the deposition temperature pyramid shaped morphology changes. Laser Raman study confirms the peaks 109, 148, 219, 415 and 635 cm^?1 conforms the Cu₂O phase formation. The band gap of the films are 2.02, 2.10 and 2.27 eV for the RT, 40 and 50 °C, respectively. The photoluminescence spectral analysis contains an emission peak at 618 nm confirm the formation of Cu₂O. The photo response study confirms the ohmic nature of the films. The film electrodeposited at room temperature showed good I–V curve at the illumination of 300 W cm^?2.     

Optical characterization of thin thermal oxide films on copper by ellipsometry

A complete optical characterization in the visible region of thin copper oxide films has been performed by ellipsometry. Copper oxide films of various thicknesses were grown on thick copper films by low temperature thermal oxidation at 125 °C in air for different time intervals. The thickness and optical constants of the copper oxide films were determined in the visible region by ellipsometric measurements. It was found that a linear time law is valid for the oxide growth in air at 125 °C. The spectral behaviour of the optical constants and the value of the band gap in the oxide films determined by ellipsometry in this study are in agreement with the behaviour of those of Cu₂O, which have been obtained elsewhere through reflectance and transmittance methods. The band gap of copper oxide, determined from the spectral behaviour of the absorption coefficient was about 2 eV, which is the generally accepted value for Cu₂O. It was therefore concluded that the oxide composition of the surface film grown on copper is in the form of Cu₂O (cuprous oxide). It was also shown that the reflectance spectra of the copper oxide–copper structures exhibit behaviour expected from a single layer antireflection coating of Cu₂O on Cu. Received: 19 July 2001 / Accepted: 27 July 2001 / Published online: 17 October 2001     

同位素示踪法研究铜薄膜在水汽中的氧化传质机理

采用H¹⁶₂O/H¹⁸₂O接续氧化并结合同位素示踪方法,研究了铜薄膜在水汽中氧化的传质机理.将真空热蒸发制备的铜薄膜样品,分别在H¹⁶₂O,H¹⁸₂O中以及H¹⁶₂O/H¹⁸₂O接续进行氧化处理;利用X射线衍射(XRD)研究了氧化产物的形态和结构 关键词： 同位素示踪 短路扩散 铜薄膜 18₂O')" href="#">H¹⁸₂O     

Enhanced Fröhlich interaction of semiconductor cuprous oxide films determined by temperature‐dependent Raman scattering and spectral transmittance

Anomalous low temperature behaviors in cuprous oxide (Cu₂O) film grown on quartz substrate have been investigated by temperature‐dependent Raman and transmittance spectra. The longitudinal optical components of two Γ₁₅‐ phonon modes become sharper and more intense at a low temperature. It can be found that the highest‐order electronic transition located at 6.4 eV exhibits a minimum transmittance near 200 K. Correspondingly, the variations from phonon intensity ratios reveal obvious anomalies with the decreasing temperature, indicating the existence of strong electron–phonon coupling mediated by Fröhlich interaction in the Cu₂O films below the temperature of 200 K. Copyright © 2012 John Wiley & Sons, Ltd.     

Morphological and optical characterization of thermally evaporated copper sulphide thin films

Thin films of Cu₂S on opaque gold layers and quartz substrates at the temperature of 393 K were deposited by a thermal evaporation technique. The surface morphology of the Cu₂S thin films at different thicknesses is investigated by AFM. It is seen that all the films are composed of highly coordinated spherical nano-sized particles well adhered to the substrate. The transmittance and reflectance spectra of Cu₂S thin films on the quartz substrate were recorded by a UV–visible spectrophotometer. The results show that the thermally evaporated Cu₂S thin films have the characteristic transmittance and reflectance suitable for optoelectronic applications. The stoichiometry and surface morphology of a grown Cu₂S thin film were confirmed by energy-dispersive X-ray spectroscopy (EDAX) and scanning electron microscopy (SEM), respectively. The dependence of the refractive index and the extinction coefficient on the photon energy for both the surface film and the opaque gold layer have been determined by ellipsometry. From the spectral behaviour of the absorption coefficient at two distinct absorption regions, a dual-band scheme of optical absorption for a Cu₂S thin film is described. The indirect and direct edges of Cu₂S are found to be about at 0.91 eV and 2.68 eV, respectively.     

Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique

Cuprous oxide (Cu₂O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu₂O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu₂O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu₂O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu₂O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu₂O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu₂O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm² of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu₂O photodetector as an affordable photosensor in the future.     

Effects of annealing temperature on GO–Cu2O composite films grown by electrochemical deposition for PEC photoelectrode

In this work, graphene oxide–cuprous oxide (GO–Cu₂O) composite films were grown on fluorine-doped tin oxide substrates by electrochemical deposition. We investigated the effects of the annealing temperature on the morphological, structural, optical and photoelectrochemical (PEC) properties of GO–Cu₂O composite films. As a result, our work shows that while GO–Cu₂O composite films exhibit the highest XRD (111) peak intensity at 300 °C sample, the highest photocurrent density value obtained was −4.75 mA/cm² at 200 °C sample (using 0.17 V versus a reversible hydrogen electrode (RHE)). In addition, a reduction reaction at 300 °C sample was observed using XPS analysis from the shift in the O1s peak in addition to a weaker O1s peak intensity.     

Effects of different deposition conditions on the properties of Cu2S thin films

Cu₂S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu₂S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10^?3 to 13.8?×?10^?3 (Ω?cm). The mobility values of the Cu₂S thin films having p-type conductivity varied from 15.16 to 134.6?cm²/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu₂S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined.     

Photoluminescence characterization of polycrystalline n-type Cu2O films

Electrodeposition was used to deposit Cu₂O thin films on ITO substrates. Photoresponse of the film clearly indicated n-type behavior of Cu₂O in photoelectrochemical cells. The temperature dependence of photoluminescence (PL) revealed that the spectra consist of donor-acceptor pair emissions and the recombination between electrons bound to donors and free holes. We observed that the dominant intrinsic defect, oxygen vacancies, creates a donor energy level at 0.38 eV below the bottom of the conduction band. As a result, this donor level acts as a center for both PL emissions and to produce n-type conductivity in the electrodeposited Cu₂O films. In addition, an acceptor energy level at 0.16 eV from the top of the valence band was observed.     

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED