Photoluminescence of green nanophosphors Sr2MgSi2O7 doped with Tb3+ under 374-nm excitation

A series of Sr₂MgSi₂O₇:Tb³⁺ nanophosphors is prepared using a high-temperature solid-state reaction. The x-ray diffraction patterns show that the crystal structure of the sample is not significantly affected by Tb³⁺ ions. However, the images of the scanning electron microscope illustrate that the average size of nanoparticles becomes larger with the increase of Tb³⁺ concentration. Unlike earlier investigations on down-conversion emission of Tb³⁺ ion excited by deep ultraviolet light, in this work, the photoluminescence characteristics of Sr₂MgSi₂O₇ nanophosphors doped with different Tb³⁺ concentrations are analyzed under 374-nm excitations. The intense green emission at 545 nm is observed at an optimal doping concentration of 1.6 mol%. The main reason for the concentration quenching is due to the electric dipole-electric dipole interaction among Tb³⁺ ions.     

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.     

衬底温度对PLD方法制备的ZnO薄膜的光学和电学特性的影响

利用脉冲激光沉积法(PLD)在c面蓝宝石衬底上制备了ZnO薄膜并对其进行了X射线衍射(XRD)、反射式高能电子衍射(RHEED)、光致发光(PL)谱和霍尔(Hall)测试。RHEED和XRD分析表明,温度在350℃至550℃之间时,ZnO薄膜的结晶质量随着衬底温度的升高而提高,当衬底温度进一步升高后,ZnO薄膜的结晶质量开始下降。四个样品中,衬底温度为550℃的样品具有最清晰的规则点状RHEED图像和半高宽最窄的(0002)衍射峰。PL谱和Hall测量的结果表明,衬底温度为550℃的样品还具有最好的发光性质和最大的霍尔迁移率。     

Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates

Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Sb掺杂大尺寸ZnO纳米棒的制备及其特性研究

采用化学气相沉积法,在没有采用任何催化剂的条件下,在Si(100)衬底上成功制备出Sb掺杂大尺寸ZnO纳米棒,并对样品进行了结构和光学性质的表征。结果表明:纳米棒为结晶质量较好的六角纤锌矿结构,在能量色散谱(EDS)中观测到了Sb元素的存在。此外,在低温光致发光(PL)光谱中还观测到了与Sb掺杂相关的中性受主束缚激子发光峰(A0X)、自由电子到受主能级跃迁的发光峰(FA)、施主受主对(DAP)以及DAP的一级纵向光声子伴线(DAP-1LO),因此证实Sb元素作为受主杂质掺杂已进入ZnO晶格。     

Ag掺杂对ZnO薄膜的光电性能影响

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体,以硝酸银水溶液为Ag掺杂源,以高纯O2为载气生长了Ag掺杂ZnO(ZnO∶Ag)薄膜。研究了Ag掺杂ZnO薄膜的表面结构、电学和光学性质。结果表明所得ZnO∶Ag薄膜表面结构良好,扫描电子显微镜(SEM)测试表明薄膜表面光滑平整,结构致密均匀;在室温光致发光(PL)光谱中检测到很强的近带边紫外发光峰;透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率,表明薄膜具有较高的晶体质量与较好的光学特性;霍尔效应测试表明,在550℃下获得了p型导电的ZnO∶Ag薄膜。     

Intense up-conversion emissions of yb3＋/Dy3＋ co-doped A12O3 nanopowders prepared by non-aqueous sol-gel method＊

Yb 3+ /Dy 3+ co-doped Al2O3 nanopowders have been prepared by the non-aqueous sol-gel method and their up- conversion photoluminescence spectra are measured under excitation by a 980-nm semiconductor laser. The results show that there are comparatively abundant spectra of up-conversion emissions centered at 378, 408, 527 and 543, and 663 nm, corresponding to4G9/2 → 6H13/2,4G9/2→6H11/2 ,4I15/2 →6H13/2 , and 4F9/2 → 6H11/2 transitions of Dy 3+ , respectively. Two-photon and three-photon processes are involved in ultraviolet, violet, green, and red up-conversion emissions. The energy transition between Yb3+ and Dy3+ is discussed.     

高取向As掺杂ZnO纳米线阵列的制备与表征

在不采用任何金属催化剂的条件下,运用化学气相沉积法,在Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列.样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰,表明样品具有较好的结晶质量.场发射扫描电镜(FE-SEM)观察表明,As掺杂ZnO纳米线阵列具有均一的直径和长度,其顶部和根部直径分别为70 nm和1...     

Y_2O_3∶Eu~(3+),Dy~(3+)纳米荧光粉的白光发射性能

采用高温固相烧结法制备了系列Dy单掺杂、Eu,Dy共掺杂和Sr,Eu,Dy共掺杂的Y_2O_3纳米荧光粉.借助X射线衍射仪(XRD)和扫描电子显微镜(SEM)分析了样品的晶体结构和形貌,优化了工艺过程和参数.系统测试了稀土掺杂Y_2O_3荧光粉的激发光谱和发射光谱.在330 nm光激发下,研究了Y_2O_3∶Eu~(3+),Dy~(3+)纳米荧光粉的白光发射特性,并通过调节Eu,Dy掺杂浓度,获得了CIE为(0.32,0.33)和色温为6100 K的强白光发射.进一步讨论了Sr~(2+)离子对Y_2O_3∶Eu~(3+),Dy~(3+)纳米荧光粉白光特性的影响.结果表明,Sr~(2+)的掺入可明显改善Y_2O_3∶Eu~(3+),Dy~(3+)纳米荧光粉的白光发射.