110keV质子辐照温控涂层性能变化的XPS分析

实验研究了注量在1.0×10¹¹—1.0×10¹⁶p/cm²范围依次变化时110keV质子辐照引起的温控涂层热光性能的变化,并使用XPS谱仪分析了辐照样品化学态的变化. 实验结果表明,质子注量不高于1.0×10¹⁴p/cm²时,同种材料的温控涂层样品的相对光反射率变化很小,同时同种材料样品的表面化学结构如化学位移和元素的比例变化很小.当注量高于1.0×10¹⁴p/cm²时, 样品的相对光反射率变化明显,样品表面的原子化学结构变化大, 化学位移明显增加, 元素比例变化显著,所有样品表面的C元素比例明显增大而O元素比例明显减小.一定注量的低能质子辐照能够使某些低太阳吸收率α_s的温控涂层的太阳吸收率变得更低, 具有改善热光性能的效果.质子辐照之后温控涂层样品表面化学结构的变化与样品的物理性能的变化存在直接的关联.     

电子通量对ZnO/K2SiO3热控涂层光学性能的影响

 研究了电子通量对ZnO/K₂SiO₃热控涂层光学性能的影响。分别采用通量为5×10¹¹/cm²·s，8×10¹¹/cm²·s，1×10¹²/cm²·s 和5×10¹²/cm²·s的电子对试样进行辐照。电子辐照下涂层的光学性能发生了退化，并且发现了退化涂层在空气中的“漂白”现象。分析了ZnO/K₂SiO₃热控涂层光学性能的退化机制，同时讨论了电子通量对太阳光谱吸收系数的影响。实验结果发现，在5×10¹¹～1×10¹²/cm²·s的电子通量范围内，电子通量对ZnO/K₂SiO³热控涂层光学性能的影响相同。因此在这个电子通量范围内，采用加速地面试验来模拟空间的电子辐照效应是有效的。     

电子束在VO2薄膜中引起的价态、相结构和光学性能的改变

 利用能量为1.7MeV, 注量分别为1.25×10¹³/cm², 1.25×10¹⁴/cm², 1.25×10¹⁵/cm²的电子束辐照VO₂薄膜,采用XPS, XRD等测试手段对电子辐照前后的样品进行分析,并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起VO₂薄膜中V离子出现价态变化现象,并使薄膜的X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了VO₂薄膜的热致相变光学特性。     

离子注入ZnO薄膜的拉曼光谱研究

室温下,用80 keV N⁺和400 keV Xe⁺离子注入ZnO薄膜,注入剂量分别为5.0×10¹⁴—1.0×10¹⁷/cm²和2.0×10¹⁴—5.0×10¹⁵/cm².利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435 cm<     

太阳核心中7Be电子俘获几率的计算

在太阳核心的条件下,⁷Be原子被完全电离.所以,重新计算的⁷Be和⁸B太阳中微子流强分别约为4.00×10⁹cm^－2·s^－1和6.18×10⁶cm^－2·s^－1,而标准太阳模型预言的⁷Be和⁸B太阳中微子流强则分别是4.80×10⁹cm^－2·s^－1和5.15×10⁶cm^－2·s^－1.这将进一步增大在Super Kamiokande太阳中微子实验上中微子流强的实验测量值与理论预计值之间的差异.     

强脉冲软X光辐照薄塑料闪烁体发光特性研究

 介绍了Z-pinch实验用软X光功率仪的测量原理，利用“强光一号”产生的强脉冲软X光对薄塑料闪烁体(Ø40 mm×0.1 mm)进行了辐照。实验中，采用两套软X光功率仪并安装在同一个大法兰面上，其中一套作为标准系统，参数保持不变，另一套系统的狭缝宽度逐渐增加，以改变软X光辐照到闪烁体上的能量通量密度。测量了软X光的辐射功率，由此计算得到在强脉冲软X光辐照下发光线性输出时能量通量密度下限，为1.47×10⁵ W/cm²，为以后在Z-pinch物理诊断中合理安排探测系统提供了实验依据，使诊断结果更加合理和准确。     

keV 质子辐照对Kapton/Al光学性能的影响

 采用空间综合辐照设备对Kapton/Al薄膜进行了质子辐照地面模拟试验，选取质子能量90 keV,辐照通量5.0×10¹¹ cm¹²·s^-1。通过辐照前后光谱反射系数的变化考察了实验样品的光学性能退化特征。借助于反射光谱和紫外-可见吸收光谱和傅里叶转换红外光谱分析技术分析了辐照后Kapton/Al光学性能的退化机理。研究结果表明：辐照过程中样品表面发生了复杂的化学反应，随着辐照剂量的增加光能隙逐渐减小，Kapton吸收曲线的末端边缘发生红移并且在可见光区吸收强度增加。     

4H-SiC NMOS电子、质子辐照数值模拟

 分析了高能电子、质子对4H-SiC的损伤机理,建立了4H-SiC NMOS器件物理模型。电子、质子辐照效应模型。应用ISE-TCAD软件进行数值模拟计算,得出在能量为2.5 MeV、注量为5×10¹³ cm^-2的电子辐照及能量为6.5 MeV、注量为2×10¹⁴ cm^-2的质子辐照下,4H-SiC NMOS转移特性曲线和亚阈值漏电流曲线变化的初步规律。数值模拟结果与相同条件下Si NMOS实验结果吻合较好。     

Ar离子辐照非晶态合金引起的尺寸变化

利用兰州重离子加速器(HIRFL)提供的2.79MeV/u Ar离子,在50K以下的低温辐照了Fe₄₇Ni₂₉V₂Si₆B₁₆等4种非晶态合金样品,室温下使用光学显微镜对辐照前、后的同一样品拍照,对比测量了样品的宏观尺寸. 结果表明:在辐照剂量为1.5×10¹⁴离子/cm²时,非晶态合金形变不明显,测量到的样品宽度相对增长Δb/b₀均小于1.0%;当辐照剂量增加到1.6×10¹⁵离子/cm²时,所有非晶态合金样品都发生了显著的形变,其宽度相对增长分布在4.3%—12.0%之间,对此结果进行了定性的分析.     

Si离子注入和H等离子体处理对单晶Si中空腔生长的影响研究

室温下首先采用160keVHe离子注入单晶Si样品到剂量5×10¹⁶ions/cm²,部分样品再接受80keVSi离子辐照到较高的剂量5×10¹⁵ions/cm²或接受高密度H等离子体处理.应用透射电镜观测分析了800℃高温退火引起的空腔的形成形貌.结果表明,附加Si离子辐照或H等离子体处理会影响Si中空腔的生长.就Si离子附加辐照而言,由于辐照引入富余的间隙子型缺陷,因此,它会抑制空腔的生长,而高密度H等离子体处理则有助于空腔的生长.定性地讨论了实验结果.     

热补偿腔镜热变形的研究

采用ANSYS有限元软件,系统模拟了强激光作用下的热补偿全反射硅镜的温度场分布和热变形.详细地研究了不同区域的热补偿和不同的热补偿功率大小对镜面变形峰谷值的影响.结果表明有效的热补偿对镜面变形峰谷值有很大的影响,在非光照区进行热补偿可以大大降低镜体的温度梯度,从而明显减小镜面变形的峰谷值.热补偿腔镜特别适合于机载或车载军用强激光器.     

有机发光二极管的热分析与热设计

采用基于计算流体动力学的热学模拟仿真与瞬态热学测试技术分析了OLED的热学特性,研究并讨论了输入功率、面板取向、风速等实际应用变量对OLED面板结温的影响。研究结果表明,OLED的结温与衬底及封装盖表面存在明显的温度梯度,且此温度梯度随输入电流增加大幅增大。OLED的热学特性与面板取向、气流速度密切相关。     

Isotropic Thermal Cloaks with Thermal Manipulation Function

By extending the conventional scattering canceling theory,we propose a new design method for thermal cloaks based on isotropic materials.When the objects are covered by the designed cloaks,they will not disturb the temperature profile in the background zone.In addition,if different inhomogeneity coefficients are selected in the thermal cloak design process,these cloaks can manipulate the temperature gradient of the objects,i.e.,make the temperature gradients higher,lower,or equal to the thermal gradient in the background zone.Therefore,thermal transparency,heat concentration or heat shield effects can be realized under a unified framework.     

多孔介质高温蓄热的热性能分析

高温蓄热是太阳能热发电、高温热利用中的重要组成部分。本文对基于多孔介质和熔融盐流体的高温蓄热过程进行了计算分析,对蓄热时间、流体进口温度、进口速度对斜温层温度分布的影响进行了分析。结果表明进口温度对斜温层厚度的影响较小,进口速度的增加会导致斜温层厚度的增加。同时对流体和多孔介质的温度差进行了分析,得到了应用于局部热平衡和非热平衡的雷诺数判据。     

用激光测量高热可靠性电子器件的热变形

本文提出了一种测量大功率电子器件热变形的双曙光激光全息干涉法，针对一种可靠性要求很高的电子器件-火箭点火用固态继电器进行实际测试，试验结果表明，固态继电器在大负载功率工作状态时，芯片表面的干涉条纹较多，条纹弯曲程度较大，因此反映了芯片热变形和热应力增大趋势较为明显。     

Thermal Ionization

In the context of an idealized model describing an atom coupled to black-body radiation at a sufficiently high positive temperature, we show that the atom will end up being ionized in the limit of large times. Mathematically, this is translated into the statement that the coupled system does not have any time-translation invariant state of positive (asymptotic) temperature, and that the expectation value of an arbitrary finite-dimensional projection in an arbitrary initial state of positive (asymptotic) temperature tends to zero, as time tends to infinity. These results are formulated within the general framework of W ^*-dynamical systems, and the proofs are based on Mourre's theory of positive commutators and a new virial theorem. Results on the so-called standard form of a von Neumann algebra play an important role in our analysis.     

Thermal Relativity

The group G of general coordinate transformations on the thermodynamic configuration space E spanned by all the extensive variables keeps the first law of thermodynamics invariant. One can introduce a metric with Lorentzian signature on the space E, with the corresponding line element also being invariant under the action of G. This line element is identified as the square of the proper entropy. Thus the second law of thermodynamics is also formulated invariantly and this lays down the foundation for the principle of thermal relativity.     

Thermal QCD

By the methbd of the gauge field theory at finite temperature, the static thermodynamic properties in quark-gluon plasma are studied in detail. According to the renormalization group equation, an analytic expression of the running coupling constant g(T, p) with the temperature T is obtained.     

Thermal plasmas

Although many thermal plasma processes have been developed for industrial applications, the wide acceptance as a manufacturing technology is prevented due to economical and competitive reasons, and/or reproducibility and reliability aspects. This paper is devoted to an assessment of the present knowledge in the following topics: (1) plasma torch and performance of blown arc (dc or ac), transferred arc and radio frequency torches; (2) established industrial applications with special emphasis on cutting, welding, spraying, transferred arc reclamation, reheating and purification, reheating metal melts, smelting reduction, chemical operations, and waste destruction; (3) recent developments in the knowledge of fundamental processes in plasma torches with power sources, cathodes (hot and cold), anodes (static and dynamic behavior), and torch components; (4) modeling-thermodynamic and transport properties, plasma flow with and without the Maxwell's equations; (5) measurement techniques including emission and absorption spectroscopy, laser scattering, enthalpy probes, video cameras, spectral analysis, shadowgraphy, and particle diagnostics either in flight with statistical measurements and those giving characteristics of a single particle upon flattening on a substrate; and (6) plasma-processing development in the presently used industrial processes and also in prospective processes with surface hardening, ultrafine powder production, plasma-assisted CVD, and plasma-fluidized or spouted bed reactors