质子辐照对极紫外波段滤光片透过率的影响

 为了检验应用在极紫外波段空间太阳望远镜上Al滤光片在空间辐照环境下透过率的变化情况,用能量100 keV,剂量为6×10¹¹/mm²的质子束对其进行辐照,利用透射电子显微镜分析了质子辐照前后滤光片的微观结构。实验结果表明:由于质子辐照使滤光片受质子侵蚀后,Al原子被击出发生质量损失,表面形态发生了变化,造成滤光片变薄,从而导致透过率由辐照前的12.1%增大到15.0%,且滤光片的薄厚分布不均匀使透过率曲线出现了次级峰,造成其光学性能的退化。     

电子通量对ZnO/K2SiO3热控涂层光学性能的影响

 研究了电子通量对ZnO/K₂SiO₃热控涂层光学性能的影响。分别采用通量为5×10¹¹/cm²·s，8×10¹¹/cm²·s，1×10¹²/cm²·s 和5×10¹²/cm²·s的电子对试样进行辐照。电子辐照下涂层的光学性能发生了退化，并且发现了退化涂层在空气中的“漂白”现象。分析了ZnO/K₂SiO₃热控涂层光学性能的退化机制，同时讨论了电子通量对太阳光谱吸收系数的影响。实验结果发现，在5×10¹¹～1×10¹²/cm²·s的电子通量范围内，电子通量对ZnO/K₂SiO³热控涂层光学性能的影响相同。因此在这个电子通量范围内，采用加速地面试验来模拟空间的电子辐照效应是有效的。     

110keV质子辐照温控涂层性能变化的XPS分析

实验研究了注量在1.0×10¹¹—1.0×10¹⁶p/cm²范围依次变化时110keV质子辐照引起的温控涂层热光性能的变化,并使用XPS谱仪分析了辐照样品化学态的变化. 实验结果表明,质子注量不高于1.0×10¹⁴p/cm²时,同种材料的温控涂层样品的相对光反射率变化很小,同时同种材料样品的表面化学结构如化学位移和元素的比例变化很小.当注量高于1.0×10¹⁴p/cm²时, 样品的相对光反射率变化明显,样品表面的原子化学结构变化大, 化学位移明显增加, 元素比例变化显著,所有样品表面的C元素比例明显增大而O元素比例明显减小.一定注量的低能质子辐照能够使某些低太阳吸收率α_s的温控涂层的太阳吸收率变得更低, 具有改善热光性能的效果.质子辐照之后温控涂层样品表面化学结构的变化与样品的物理性能的变化存在直接的关联.     

电子辐照能量对Kapton/Al热控涂层光学性能的影响

 研究了电子辐照时，电子能量与累积通量对Kapton/Al热控涂层光学性能的影响。采用原位测量的手段记录了辐照前后的光谱反射系数。试验结果表明，电子辐照后Kapton/Al热控涂层的反射性能,在太阳光谱辐射强度较大的300~1 200nm波长区间产生较大程度退化。在电子辐照作用下，作为离子导电型聚合物的 Kapton薄膜表面没有发现辐照充电效应。辐照后涂层材料存在“退火效应”，或称“漂白效应”。Kapton/Al涂层太阳吸收比的变化量与电子辐照累积通量的变化关系成幂函数形式,其系数与指数的极大值与极小值分别出现在电子能量为50keV附近。在辐照累积通量相同时，该变化量随辐照电子能量的提高而增大。     

3 MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响

研究了AlGaN/GaN 高电子迁移率晶体管(HEMT)的质子辐照效应. 在3 MeV质子辐照下, 当辐照剂量达到1× 10¹⁵ protons/cm²时, 漏极饱和电流下降了20%, 最大跨导降低了5%. 随着剂量增加, 阈值电压向正向漂移, 栅泄露电流增加. 在相同辐照剂量下, 1.8 MeV质子辐照要比3 MeV质子辐照退化严重. 从SRIM软件仿真中得到不同能量质子在AlGaN/GaN异质结中的辐射损伤区, 以及在一定深度形成的空位密度. 结合变频C-V测试结果进行分析, 表明了质子辐照引入空位缺陷可能是AlGaN/GaN HEMT器件电学特性退化的主要原因.     

原子氧与紫外综合辐照下Kapton/Al结构变化

在激光源原子氧地面模拟设备中对Kapton/Al薄膜二次表面镜进行了原子氧与紫外综合辐照实验,研究了Kapton/Al薄膜质量及太阳吸收比的变化,重点关注了实验前后Kapton/Al薄膜表面结构及成份的改变。结果表明:Kapton/Al薄膜二次表面镜的质量随辐照时间的增加逐渐减小,太阳吸收比的变化趋势与之相反,随辐照时间的增加逐渐增大;综合辐照后Kapton/Al薄膜表面主要官能团数量呈下降趋势;综合辐照过程中材料表面C-C键、C-N键的破坏及在原子氧和紫外环境中重新结合成新的化学结构是造成Kapton/Al薄膜性能退化的主要微观机制,气体小分子的挥发是造成Kapton/Al薄膜质量损失的主要原因。     

keV质子辐照Kapton/Al的能量传输过程

采用TRIM和SRIM2003软件模拟计算了10—300keV能量区间质子辐照Kapton/Al的能量传输过程. 依据模拟结果选取了辐照能量参数, 在室温真空条件下, 采用空间综合辐照设备对Kapton/Al进行了质子辐照. 借助于表面红外光谱技术, 对Kapton的重要官能团特征峰做了定量分析, 通过特征峰处吸光度的变化得到了典型分子键的损伤截面. 平均损伤截面和电子能损的强烈依赖关系及TRIM计算结果一致说明keV质子辐照Kapton/Al的辐照损伤主要来自电子能损效应. 太阳吸收比的变化趋势和模拟结果都表明在入射能量80keV附近, 质子辐照Kapton/Al的辐照效应最大.     

低能质子辐照ZnO/silicone白漆产生微观损伤的红外光谱研究

 通过空间综合辐照模拟设备对能量小于200 keV质子辐照下ZnO/silicone白漆光学性能变化及损伤机理进行研究。结果表明,ZnO/silicone白漆的光学性能退化主要发生在可见光区,太阳吸收比随质子辐照能量、注量的增加而增大。借助傅里叶变换红外光谱分析技术研究了质子辐照ZnO/silicone白漆时有机硅树脂的光学性能退化机理。质子辐照使ZnO/silicone白漆中游离氧含量增加,氧化硅原子上的有机取代基使Si—C链断裂,并生成活性羟基,而这种活性羟基能促使有机硅树脂内Si—O—Si键的裂解。同时Si—O—Si链内氧原子未成键的孤对电子与邻近硅原子的3d空轨道配位,降低了π*轨道的能量,提高了对光吸收的几率,增强了n→π*电子跃迁,使吸收带红移,从而导致ZnO/silicone白漆光学性能退化。     

1 053，527，351 nm倍频分离膜的制备与性能研究

 用电子束蒸发及光电极值监控技术在石英基底上沉积了三倍频分离膜，将部分样品置空气中于250 ℃温度下进行3 h热退火处理。然后用Lambda900分光光度计测量了样品的光谱性能；用表面热透镜技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品分别在355 nm和1 064 nm的抗激光损伤阈值。实验结果发现，样品的实验光谱性能良好，退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时弱吸收平均值从退火前的1.07×10^-4下降到退火后的6.2×10^-5，从而使对基频的抗激光损伤阈值提高，从14.6 J/cm²上升到18.8 J/cm²，但是三倍频阈值在退火后有显著降低，从7.5 J/cm²下降到2.5 J/cm²。     

辐射变色薄膜的质子辐照响应

 用J-2.5质子静电加速器提供的质子束,对研制的一种高灵敏度新型辐射变色膜进行质子辐射响应研究。该变色膜以聚乙烯醇缩聚物为基质,以类丁二炔化合物为有机染色材料,质子能量为2.0 MeV,辐照注量为1.0×10¹⁰～1.0×10¹² cm^-2。用光谱响应测试薄膜的辐射效应显示：变色薄膜颜色由粉红渐变为蓝色, 并随着辐照剂量的增加而逐渐加深;用图像分析仪分析辐照后靶材的光密度发现,图像的光密度随聚焦斑距离的增大而减小;用分光光度计测试其吸收光谱发现,主吸收峰值出现在660 nm附近,且吸收峰处的响应吸光度与质子注量具有较好的线性关系;对新型变色薄膜辐照后持续效应的研究表明,变色膜辐照后续效应微弱,辐照后可以立即测量,且对测量环境变化不敏感。     

高能Ar离子辐照PET引起的光吸收变化研究

采用紫外–可见光吸收技术分析和研究了35MeV/uAr离子辐照聚酯膜引起的光吸收改性.结果表明,Ar离子轰击聚酯膜时引起了碳键的共轭体系形成,从而导致了紫外–可见光区域中光吸收明显增加,光吸收增加的幅度依赖于离子的照射剂量、离子在样品中的平均电子能量损失以及光的波长,剂量越高,电子能损越大,光吸收增幅越大;而光的波长越长,光吸收的增加则越不明显.利用测量到的光吸收曲线,同时还定量地研究了各种辐照条件下聚酯膜的光能隙和碳原子团的尺寸.     

Examination of optical properties and estimation of mechanical energies of irradiated polypropylene and teflon

The optical absorption and mechanical yielding energy has been studied under exposure of γ-radiation. Two crystalline polymers, polypropylene (PP) and Teflon, were irradiated with a ⁶⁰Co source, with doses ranging up to 6 kGy. The observed optical energy gap (E _opt) and energy gap tail (Δ E) for irradiated thin sheets of PP were determined from the measured absorption spectra. The average values of (E _opt) and (Δ E) were 5.85 and 0.5 eV, respectively. There is no detectable change in the optical energy gap under the applied γ-ray doses. On the other hand, the effect of γ-radiation on mechanical properties of irradiated Teflon was much pronounced. It was found that Young’s modulus and yield stress increase with radiation dose, whereas the yield strain decreases. The calculated yield energy increases with radiation dose from 0.27 to 0.35 Mpa per unit volume. The enhancement in the mechanical properties of irradiated Teflon was attributed mainly to crosslinking process and other structural changes occuring during irradiation with γ-rays.     

水杨醛缩苯胺锌及其薄膜的谱学性能

合成了一种新型的发光材料水杨醛缩苯胺锌(SAZ),利用真空热蒸镀制备了高质量、纳米级薄膜,利用红外光谱、差热-热重谱、X射线衍射谱、UV-Vis吸收谱、荧光光谱研究了水杨醛缩苯胺锌及其薄膜的结构、晶态、热稳定性以及光学特性,并利用循环伏安法、UV-Vis吸收谱确定了该材料的能级结构。结果表明,水杨醛缩苯胺锌无定性薄膜具有较高的热稳定性,在紫外光激发下产生绿色荧光,色纯度高, 亮度高。水杨醛缩苯胺锌薄膜在大气环境下存放,荧光衰减比8-羟基喹啉铝快,但受紫外光照射时,荧光衰减比8-羟基喹啉铝慢。水杨醛缩苯胺锌的HOMO能级为-5.659 eV,LUMO能级为-3.054 eV,禁带宽度为2.604 eV。     

Use of optical properties of LiF in radiation protection dosimetry

Optical absorption spectra of LiF:Mg, Ti thermoluminescence (TL) materials have been determined and used in radiation absorbed dose measurements. Samples were irradiated with different gamma doses (0???1.022 Gy) with dose rate of 12.78 mGy/min and also for different X-ray beam qualities. It was found that there is no significant absorption edge, and the optical absorption increases with increasing gamma doses. Peak intensities of trapping levels showed a linear increase with increasing X-ray or gamma doses. The variation of the optical density with X-ray or gamma doses is energy independent. The TL readings were not affected when the samples were first measured optically. The linearity of the optical density–dose relationship is found to be useful in radiation protection dosimetry.     

On the optical energy gap of SmN

The fundamental absorption edge of SmN is measured by the optical reflection and the transmission technique using a FTIR spectrometer. The MgF₂ passivated thin films of SmN were grown by thermal evaporation. The optical spectra was collated in the energy range of 0.5 to 5.0 eV, and the optical energy gap is measured at 1.2 eV, the same as that of DyN. The measured value of the onset of the absorption in SmN does agree with that theoretically calculated, if the spin–orbit coupling is accounted for.     

Optical properties of Sm-doped CaF2 bismuth borate glasses

Sm³⁺-doped calcium fluoride bismuth borate glasses were prepared and characterized optically and the oscillator strengths and Judd–Ofelt parameters for the glass containing 1.5 mol% of Sm₂O₃ were calculated. Density and optical absorption, transmission and the emission spectra were measured. The values of Judd–Ofelt parameters suggested an increase in the degree of asymmetry the local ligand field at Sm³⁺ sites. The optical band gap energy, band tailing parameter and Urbach's energy were calculated for all glass samples. It was found that with increasing the concentration of Sm₂O₃ content the values of the optical band gap energy decrease whereas Urbach's energy increases. Absorption and excitation spectra indicate that commercial UV and blue laser diodes, blue and bluish-green LEDs and Ar⁺ optical laser are powerful excitation sources for Sm³⁺ visible fluorescence in the glass.     

Optical Properties of Gamma Irradiated Soda-Lime Silicate Glasses Exchanged with Copper

The effect of copper ion exchange upon the optical absorption and room temperature gamma colouration of soda lime silicate glasses has been investigated. After ion exchange performed at 720 K, copper ions substitute mainly the alkali ions and do modify the optical absorption spectra of the specimens. It has been shown that gamma irradiation does not induce the formation of colloidal copper. Moreover, the colouration process itself is independent of the presence of copper ions. The generated colour centres are rather related to the presence of sodium and potassium ions. The optical bleaching by the UV light occurs in two stages. First disappear centres related to the Na-type defects and next those related to the K-type defects.     

Influence of high-energy X-ray irradiation on the optical properties of tetraphenylporphyrin thin films

Tetraphenylporphyrin (TPP) thermally evaporated films were irradiated by different doses (0.5–2.5 kGy) of X-ray with energy 6 MeV. The optical properties for TPP were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 200 to 1100 nm. The absorption spectra recorded in the UV-VIS region of spectra showed different absorption bands, namely four Q-bands in the visible region of the spectrum and a more intense band termed as the Soret band in the near-UV region of the spectrum. Two other bands labeled N and M appear in the UV region. The Soret band showed Davydov splitting. Increasing X-ray irradiation dose influences the optical properties of TPP films. All absorption bands show a continuous blue shift in position and a decrease in intensity with increasing X-ray dose. At 2.5 kGy the B, N, and M bands disappeared. The reduction in the absorbency was calculated as a function of X-ray dose. The energy gap was determined and the type of optical transition was found to be an indirect allowed transition.     

Laser-induced changes on optical band gap of amorphous and crystallized thin films of Se75S25−xAGx

Optical band gap of amorphous, crystallized, laser induced amorphous and laser induced crystallized films of Se₇₅S_25−xAg_x (x=4, 6 and 8) glassy alloys was studied from absorption spectra. The amorphous and crystallized films were induced by pulse laser for 10 min. After laser irradiation on amorphous and crystalline films, optical band gap was measured. It has been found that the mechanism of the optical absorption follows the rule of indirect transition. The amorphous thin films show an increase in the optical band gap, while the crystallized (thermally annealed) thin films show a decrease in the optical band gap by inducing laser irradiation. Crystallization and amorphization of chalcogenide films were accompanied with the change in the optical band gap. The change in optical energy gap could be determined by identification of the transformed phase. These results are interpreted in terms of concentration of localized states due to shift in Fermi level.     

第一性原理计算N掺杂对InNbO4电子结构的影响

宽带隙（3.83 eV）半导体光催化材料InNbO4在紫外光作用下具有分解水和降解有机物的性能。最近实验发现了N掺杂InNbO4具有可见光下分解水制氢的活性。为了从理论上解释这一实验现象，本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO4的能带结构、态密度和光学性质的影响。分析能带结构可得，N掺杂后在InNbO4的价带（O 2p）上方形成N 2p局域能级，导致电子跃迁所需的能量减小。吸收光谱表明，N掺杂后InNbO4的光吸收边出现了红移，实现了可见光吸收。