YBCO超导层的a轴晶生长研究

采用化学溶液沉积制备YBCO薄膜,研究了氧分压对YBCO超导层a轴晶生长的影响.研究发现氧分压是YBCO薄膜a轴晶形成的关键因素.当氧分压改变,YBCO生长模式由c轴生长转变为过渡到a(b)-c混合生长模式.低氧分压可以促进YBCO的c轴生长.高氧分压影响YBCO超导层的微观结构,促使YBCO的织构取向变差,最终导致YBCO超导层的性能降低.     

采用MOD法在LAO上制备YBCO超导薄膜的Raman光谱研究

研究了TFA-MOD法在铝酸镧基体上制备YBCO超导薄膜时不同初始热处理温度对薄膜的影响。通过XRD、Ram an光谱和SEM等手段,对生长过程中的YBCO超导薄膜结构进行表征、分析,探讨了YBCO的生长机制。     

超导转变温区YBa2Cu3O7薄膜样品的表面电阻测量

我们对高温超导YBa2Cu3O7(YBCO)薄膜样品在超导转变温区微波表面电阻RS随温度变化的初步测量结果.利用介质谐振器方法,分别测量了由镀银高纯铜标准试样和脉冲激光淀积方法制备的高温YBCO超导薄膜为下底板的谐振器品质因素随温度变化的数据.通过对镀银高纯铜标准试样和RS为零的谐振器数据分析,得到谐振器参数随温度变化的曲线.由有高温YBCO超导薄膜组成的谐振器Q值随温度变化数据得到YBCO薄膜样品超导转变温区微波表面电阻的变化.讨论了YBCO超导薄膜的微波表面电阻测量结果.     

YBa2Cu3O7-δ/LaAlO3和Tl2Ba2CaCu2O8/LaAlO3高温超导薄膜内的应变对其微波表面电阻影响的研究

YBa2Cu3O7-δ/LaAlO3 (YBCO/LAO) 超导薄膜是通过热蒸发沉积方法制备的,实验中使用的Tl2Ba2CaCu2O8/LaAlO3 (TBCCO/LAO) 超导薄膜是通过直流磁控溅射方法制备的.通过分析两片超导薄膜的XRD谱计算出了两片超导薄膜内的应变,ΔCY=4.8483×10-3;ΔCT=8.5272×10-5,结果显示YBCO超导薄膜内的应变要大于TBCCO超导薄膜内的应变.另外,采用共面谐振技术研究这两片超导薄膜内的微波表面电阻随温度的变化,结果表明YBCO超导薄膜具有更大的微波表面电阻.分析和讨论了应变对超导薄膜微波表面电阻的影响.     

金属有机溶剂法Y1Ba2Cu3O7-δ超导薄膜的Ce掺杂效应

通过三氟乙酸盐-金属有机物沉积方法（TFA-MOD）研究了Ce掺杂对钇钡铜氧（YBCO）超导薄膜性能的影响.观察到10 mol%Ce掺杂使YBCO超导薄膜的c轴取相降低,出现明显的a轴晶粒,薄膜表面变得粗糙.尽管超导临界温度稍有减小,其超导临界电流密度（Jc）在高磁场下性能获得了有效提高,当外磁场强度达到2T时,超导薄...     

湿度对YBCO薄膜微观结构和超导性能的影响

文中采用无氟高分子辅助金属有机物沉积法( PA - MOD)在不同湿度条件下在LaAlO3单晶基底上制备了一系列YBCO超导薄膜.X射线衍射、扫描电镜和物性测量的结果表明,在成相热处理过程中气氛湿度对YBCO薄膜的结构和超导性能的有明显影响.干燥气氛成相的YBCO薄膜织构较好,表面较平整、致密,超导性能也较高,其临界超...     

快速前处理TFA-MOD制备YBCO超导薄膜的研究

三氟乙酸盐金属有机物沉积(TFA-MOD)方法是制备YBa2Cu3O7(YBCO)超导薄膜最有应用前景的方法之一。采用快速前处理TFA-MOD的方法在LaAlO3单晶基片上生长YBCO薄膜并与常规的TFA-MOD方法进行对比研究。XRD分析表明用快速前处理TFA-MOD方法制备的YBCO薄膜的c轴取向一致性,没有常规的TFA-MOD制备的YBCO薄膜好。SEM的分析表明快速前处理TFA-MOD制备的YBCO超导薄膜表面有孔洞和YBCO(103)取向生长的晶粒,常规方法制备的YBCO薄膜表面比较光滑,孔洞较少。虽然较常规方法制备的薄膜的临界电流密度(JC)低,但超导电性能分析表明,快速前处理方法制备的YBCO薄膜JC达到1mA/cm2以上,且前处理时间大幅缩短,对于提高YBCO薄膜制备的效率非常有效。     

Y_2O_3缓冲层对YBCO超导转变温度的影响（英文）

超导薄膜所受的应力对其临界转变温度Tc具有重要的影响,研究应力对超导薄膜Tc的影响对获得更高Tc材料具有重要意义.本文采用溶胶-凝胶法,在LAO单晶基板上制备了Y2O3/YBCO薄膜,并研究了Y2O3缓冲层对不同厚度YBCO超导薄膜的临界转变温度的影响.研究发现,当YBCO薄膜厚度为90nm时,由于Y2O3和YBCO薄膜的晶格错配,在YBCO/Y2O3薄膜的a-b面内引入了压应力,增加了c轴的晶格常数,结果提高了YBCO薄膜的临界转变温度.当YBCO薄膜的厚度较大时(如230nm),由晶格错配引起的应力通过位错的形式得以释放,YBCO薄膜的Tc变化不大.     

预处理气氛对电子束蒸发制备YBCO薄膜性能和结构的影响

采用先电子束沉积后退火的两步法制备YBCO超导薄膜;根据薄膜的超导临界电流密度、X射线衍射(XRD)和扫描电镜(SEM)的测试结果,研究了不同预处理气氛对YBCO薄膜结构、表面形貌及超导性能的影响。     

不同衬底上制备YBa2Cu3O7-δ超导薄膜的微结构研究

采用大直径中空柱状阴极直流磁控制溅射装置，在LaAlO3和Zr(Y)O2衬底上制备YBCO超导薄膜。用透射电镜（TEM）、扫描隧道显微镜（SIM）和原子力显微镜（AFM）对薄膜和衬底间的界面，薄膜的螺旋生长结构，YBCO薄膜及其相应衬底的表面形貌进行了观察和测量。分析了基片表面形貌及表层内缺陷对界面附近薄膜组织结构的影响。研究了不同衬底沉积的超导薄膜具有不同表面形貌的原因。从生长机理角度对表面形貌、缺陷和位错的形成机制进行讨论。     

Strongly enhanced flux pinning in the YBa_2Cu_3O_(7-X) films with the co-doping of Ba TiO_3 nanorod and Y_2O_3 nanoparticles at 65 K

YBa2Cu3O7-x(YBCO) films with co-doping BaTiO3(BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates(TFA-MOD). The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction(XRD), Raman spectra, and scanning electron microscope(SEM). The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as ~ 17 mA/cm2(self-field, 65 K) by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density(JC) not only at the self-magnetic field, but also in the applied magnetic field.     

单源进液金属有机化学气相沉积法工作气压对YBCO薄膜制备的影响研究

基于金属有机化学气相沉积法(MOCVD),在沉积有Y2O3/YSZ/ CeO2( YYC)多层过渡层的Ni - W_at.5％金属基带上沉积YBa2Cu3O7-x(YBCO)超导薄膜.通过对单源进液系统的优化,使金属有机源连续稳定地输送到蒸发皿进行闪蒸.优化总气压并通入N2O气氛,以获得高质量的YBCO薄膜.在优化的温...     

插入二氧化铈薄膜提高MOD-YBa2Cu3O7-x厚膜超导性能的研究

YBa₂Cu₃O_7-x(YBCO)膜存在“厚度效应”: 随着厚度增加, YBCO薄膜的临界电流密度下降, 尤其是YBCO薄膜的厚度超过1 μm时, 它的临界电流密度急剧下降. 本文在YBCO薄膜之间引入极薄的二氧化铈(CeO₂)薄膜, 成功制备出结构为YBCO/YBCO/CeO₂/YBCO的超导厚膜. 所制备的厚度为2 μm的YBCO膜临界电流密度为1.36 MA/cm² (77 K, 自场), 其性能比相同厚度的纯YBCO膜有了较大幅度的提升. 研究表明CeO₂薄膜起到了传递织构、松弛应力的作用.     

The effect of BZO doping concentration and thickness dependent properties of YBCO films grown by PLD on buffered NiW substrates

The effect of BaZrO₃ (BZO) doping is systematically studied in YBa₂Cu₃O_6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.     

Enhanced flux-pinning in fluorine-free MOD YBCO films by chemical doping

YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO₃ substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced J_c values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, J_c values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.     

Effects of tin-compounds addition on Jc and microstructure for YBCO films

Tin-compounds were doped into YBa₂Cu₃O_7−δ (YBCO) films as pinning centers to enhance J_c in magnetic fields. YBCO films were grown by a metal organic deposition process using tri-fluoroacetates starting solutions. Tin-acetylacetonate salts were then dissolved into the starting solution as pinning centers. J_c of the YBCO films with tin-acetylacetonates were enhanced in all magnetic field angles. Transmission electron microscopy (TEM) and TEM-EDS (Energy Dispersive X-ray Spectroscopy) observations revealed the existence of tin-compound particles with the size of about 30 nm in the YBCO film. These nano particles were distributed randomly in the film and were considered to act as 3-dimentional pinning centers.     

Fabrication of YBCO／YSZ and YBCO／MgO thick films using electrophoretic deposition with top-seeded melt growth process

Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y_2BaCuO_5(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5 mm^3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ～89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ～3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm^2, 3870 (77 K) for YBCO/YSZ thick films and 2399 (77 K) for YBCO/MgO thick films, which are comparable to the best J_c reported of the thick films prepared by the same method.     

Observation of defects and growth orientations of YBa2Cu3Ox thin films with YSZ buffer layers on Si

We have investigated defects and in-plate orientations of YBa₂Cu₃O_x thin films prepared by pulsed laser deposition (PLD) with YSZ as a buffer layer. The films showed c-axis oriented growth with the transition temperature T_co up to 87 K. Several types of defects including thermally induced cracks, grain boundaries and outgrowths were observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The grain boundary provided a favorable path for crack propagation. The outgrowths nucleated on the YSZ surface grew with stoichiometric composition. According to X-ray diffraction (XRD) and HRTEM studies the YSZ buffer layer grew with the orientation relationship, YSZ110//Si110 and YSZ(001)//Si(001) up to the YBCO/YSZ interface. The superconducting YBCO films on top grew mainly with YBCO100//Si110 and YBCO(001)//Si(001), with some minor portions of YBCO110//Si110 and YBCO(001)//Si(001).     

MgO单晶基片上YBCO高温超导薄膜的制备

在2英寸MgO(001)单晶基片上,采用直流溅射法,通过基片高温退火,成功制备了性能优越的YBa2C3O7-δ(YBCO)双面超导薄膜,能够满足超导滤波器的设计要求。X射线衍射(XRD)分析表明经过退火的基片上生长的YBCO薄膜与基片有单一的外延取向关系;用原子力显微镜(AFM)和高能电子衍射(RHEED)分析高温退火对基片表面状况的改变。结果表明制备的YBCO薄膜具有很好的超导电性,薄膜临界电流密度Jc(77K,0T)≈2.5×106A/cm2,微波表面电阻Rs(10GHz,77K)≈0.16mΩ。