Mo/Si多层膜在质子辐照下反射率的变化

为了检验应用在极紫外波段空间太阳望远镜上Mo/Si多层膜反射镜在空间辐射环境下反射率的变化情况, 模拟了部分空间太阳望远镜运行轨道的辐射环境, 利用不同能量和剂量的质子对Mo/Si多层膜反射镜进行辐照实验.辐照前后反射率测量结果显示,由于带电粒子的辐照损伤,质子辐照会使Mo/Si多层膜反射镜的反射率降低,且质子能量越低、剂量越大,对多层膜的反射率影响越明显. 当质子能量E=160keV,剂量＝6×10¹¹/mm²时,反射率降低4.1%;能量E=100keV,剂量=6×10¹¹/mm²时, 反射率降低5.7%;能量E=50keV,剂量=8×10¹²/mm²时,反射率降低10.4%. 用原子力显微镜测量辐照后Mo/Si多层膜反射镜的表面粗糙度比辐照前明显增加,致使散射光线能量逐渐增大并最终导致反射率的降低. 关键词： 质子辐照 Mo/Si多层膜反射镜 辐照损伤     

月球表面环境对Mo/Si多层膜光学特性的影响

研究了月球表面高温、强辐射的空间环境下Mo/Si多层膜的热稳定性和辐照稳定性。Mo/Si多层膜采用磁控溅射法镀制,将制备好的多层膜在100℃和200℃高温下加热,利用激光等离子体反射率计和X射线衍射仪(XRD)对加热前后的多层膜进行了测量。结果显示在200℃以内,多层膜反射率和中心波长没有显著变化,表现出良好的热稳定性。利用Monte Carlo方法模拟了质子在多层膜内造成的缺陷的分布和浓度分布。模拟显示,能量大的质子沉积在多层膜内部,造成的缺陷也集中在多层膜内部。用能量为60keV,剂量分别为3×1012 cm-2和3×1014 cm-2的质子对Mo/Si多层膜进行辐照实验。发现多层膜内部出现了烧蚀损伤缺陷及节瘤缺陷。结果表明能量相同时,辐照剂量越大对多层膜反射率影响越大。     

研究扩散屏障层对Mo/Si多层膜软X射线反射率影响的模拟

在特定波长下,用四层结构模型模拟了Mo/Si多层膜的软X射线反射率.研究了扩散屏障层dMo-on-Si和dSi-on-Mo对Mo/Si多层膜软X射线反射率的影响.研究发现,扩散屏障层并不总是损害Mo/Si多层膜的光学性能,通过合理设计dMo-on-Si和dSi-on-Mo厚度,增加dMo-on-Si与dSi-on-Mo的比值,也能提高多层膜的软X射线反射率.     

低温退火的X射线W/Si多层膜应力和结构性能

W/Si多层膜反射镜在硬X射线天文望远镜中有重要应用. 为减小其应力对反射镜面形和望远镜分辨率的影响, 同时保证较高的反射率, 采用150, 175和200 ℃ 的低温退火工艺对采用磁控溅射镀制的W/Si周期多层膜进行后处理. 利用掠入射X射线反射测试和样品表面面形测试对退火前后W/Si多层膜的应力和结构进行表征. 结果表明, 在150 ℃ 退火3 h 后, 多层膜1级峰反射率和膜层结构几乎没有发生变化, 应力减少约27%; 在175 ℃ 退火3 h后, 多层膜膜层结构开始发生变化, 应力减少约50%; 在200 ℃退火3 h 后, 多层膜应力减小超过60%, 但1级布拉格峰反射率相对下降17%, 且膜层结构发生了较大变化. W, Si界面层的增大和相互扩散加剧是应力和反射率下降的主要原因.     

13 nm窄带Si/Mo/C多层膜反射镜

基于多层膜准单色覆盖50~1500 eV能谱的多能点发射光谱测量系统可获得聚龙一号装置Z-pinch等离子体X射线源的能谱结构和总能量等信息。考虑装置的条件,在13 nm处的多层膜需要工作在掠入射角60。常规的Mo/Si多层膜尽管反射率最高,但其带宽较大,不能满足多层膜准单色的要求。因此提出将Mo和C共同作为多层膜的吸收层材料与Si组成Si/Mo/C多层膜,可使反射率降低较小而带宽明显减小。采用磁控溅射方法制备了Si/Mo/C多层膜,其掠入射X射线反射测量表面多层膜的结构清晰完整,同步辐射工作条件下反射率测量,得到Si/Mo/C多层膜在13 nm处和掠入射角60时的反射率为56.5%,带宽为0.49 nm（3.7 eV）。     

用不同的Mo靶溅射功率制备Mo/Si多层膜

 用磁控溅射法制备了周期厚度和周期数均相同的Mo/Si多层膜，用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时，Mo/Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。研究发现，随着Mo靶溅射功率的增大，Mo/Si多层膜的表面粗糙度增加，Mo的特征X射线衍射峰也增强，Mo/Si多层膜的软X射线峰值反射率先增大后减小。     

30.4 nm波长SiC/Mg多层膜反射镜

波长30.4 nm的He-II谱线是极紫外天文观测中最重要的谱线之一,空间极紫外太阳观测光学系统需要采用多层膜作为反射元件。为此研究了SiC/Mg、B4C/Mg、C/Mg、C/Al、Mo/Si、B4C/Si、SiC/Si、C/Si、Sc/Si等材料组合的多层膜在该波长处的反射性能。基于反射率最大与多层膜带宽最小的设计优化原则,选取了SiC/Mg作为膜系材料。采用直流磁控溅射技术制备了SiC/Mg多层膜,用X射线衍射仪测量了多层膜的周期厚度,用国家同步辐射计量站的反射率计测量了多层膜的反射率,在入射角12°时,实测30.4 nm处的反射率为38.0%。     

质子和α粒子在铝材料中传输的Monte Carlo模拟

为了检验应用在极紫外(EUV)波段空间太阳望远镜上Al滤光片在空间辐射环境下透过率的变化情况,我们模拟部分空间太阳望远镜运行轨道的辐射环境,应用Monte Carlo(M-C)方法对Al材料进行低能量的质子和α粒子辐照损伤模拟,计算给出了质子和α粒子辐照对Al材料产生的缺陷、电离以及声子等辐照效应,最后对结果进行了比较和分析,从而预测质子和α粒子辐照对Al滤光片性能和使用寿命的影响.     

质子辐照对极紫外波段滤光片透过率的影响

 为了检验应用在极紫外波段空间太阳望远镜上Al滤光片在空间辐照环境下透过率的变化情况,用能量100 keV,剂量为6×10¹¹/mm²的质子束对其进行辐照,利用透射电子显微镜分析了质子辐照前后滤光片的微观结构。实验结果表明:由于质子辐照使滤光片受质子侵蚀后,Al原子被击出发生质量损失,表面形态发生了变化,造成滤光片变薄,从而导致透过率由辐照前的12.1%增大到15.0%,且滤光片的薄厚分布不均匀使透过率曲线出现了次级峰,造成其光学性能的退化。     

质子辐照铝膜反射镜的慢正电子湮没研究

采用分光光度计测定了60keV质子辐照后铝膜反射镜反射光谱的变化规律.用慢正电子湮没等分析技术研究了辐照损伤的微观机制.结果表明，当质子辐照主要作用于反射镜铝膜层中时反射镜在200—800nm波长范围内反射率随辐照剂量增加而下降.入射质子可对铝膜中的缺陷产生填充作用，减小铝膜中电子密度，增加弱束缚电子带间跃迁.紫外至可见光能量较高的波段可引起带间激发跃迁，使相应的谱段反射率下降，导致反射镜光学性能的退化. 关键词： 反射镜 光学性能 质子辐照 慢正电子湮没     

Comprehension of the effects of proton on reflectivity of Mo/Si multilayer

Wavelength dependent reflectivity is crucial relationship in determining the physical property of optic system. The first object of this work is to search for the applicable method of using wavelength to predict the reflectivity of Mo/Si multilayer mirror before and after irradiation with proton. Predicated on the principle of non-linear curve fitting, a typical numerical method is highlighted because the wavelength-dependent reflectivity of Mo/Si multilayer irradiated by proton with different energies and flux are quantitative analyzed by this method. The simulations agree very well with the observed spectroscopy of 6 curves for reflectivity versus wavelength. The minimum value of correlation coefficients between actual and calculated data is 0.994. The other objects of this work are to find the optic band gap of Mo/Si multilayer and check the influences of proton on it using reflectivity spectra. In the light of the calculated results by Tauc method, the optic band gap is theoretically explained successfully via the relationship between band gap and absorption coefficient. The estimated results by both theoretical and experimental data demonstrate that the optic band gap of Mo/Si multilayer is not sensitive to proton radiation.     

Interface roughness, surface roughness and soft X-ray reflectivity of Mo/Si multilayers with different layer number

A series of Mo/Si multilayers with the same periodic length and different periodic number were prepared by magnetron sputtering, whose top layers were respectively Mo layer and Si layer. Periodic length and interface roughness of Mo/Si multilayers were determined by small angle X-ray diffraction (SAXRD).Surface roughness change curve of Mo/Si multilayer with increasing layer number was studied by atomic force microscope (AFM). Soft X-ray reflectivity of Mo/Si multilayers was measured in National Synchrotron Radiation Laboratory (NSRL). Theoretical and experimental results show that the soft X-ray reflectivity of Mo/Si multilayer is mainly determined by periodic number and interface roughness, surface roughness has little effect on reflectivity.     

Passivation of defect states in Si-based and GaAs structures

Formation of defect states on semiconductor surfaces, at its interfaces with thin films and in semiconductor volumes is usually predetermined by such parameters as semiconductor growth process, surface treatment procedures, passivation, thin film growth kinetics, etc. This paper presents relation between processes leading to formation of defect states and their passivation in Si and GaAs related semiconductors and structures. Special focus is on oxidation kinetics of yttrium stabilized zirconium/SiO₂/Si and Sm/GaAs structures. Plasma anodic oxidation of yttrium stabilized zirconium based structures reduced size of polycrystalline silicon blocks localised at thin film/Si interface. Samarium deposited before oxidation on GaAs surface led to elimination of EL2 and/or ELO defects in MOS structures. Consequently, results of successful passivation of deep traps of interface region by CN⁻ atomic group using HCN solutions on oxynitride/Si and double oxide layer/Si structures are presented and discussed. By our knowledge, we are presenting for the first time the utilization of X-ray reflectivity method for determination of both density of SiO₂ based multilayer structure and corresponding roughnesses (interfaces and surfaces), respectively.     

Mo/Si软X射线多层膜的界面粗糙度研究

 用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo/Si多层膜系列, 利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo/Si多层膜的新鲜表面近似等同于同一多层膜的内界面，通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加，Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小，多层膜的峰值反射率先增加后减小。     

Interface growth mechanism in ion beam sputtering-deposited Mo/Si multilayers

Despite the technological importance of metal/Si multilayer structures in microelectronics, the interface reactions occurring during their preparation are not yet fully understood. In this work, the interface intermixing in Mo/Si multilayer coatings has been studied with respect to their preparation conditions. Various samples, prepared at room temperature with different Mo deposition rates (0.06–0.43?Å?s^?1) and a constant Si rate, have been investigated by detailed TEM observations. Contrary to the Si-on-Mo interface where no evidence of chemical intermixing could be found, the Mo-on-Si interface presents a noticeable interface zone whose thickness was found to noticeably decrease (from 4.1 to 3.2?nm) when increasing the Mo deposition rate. Such intermixing phenomena correspond to diffusion mechanisms having coefficients ranging from 0.25?×?10^?15 to 1.2?×?10^?15?cm²?s^?1 at room temperature. By assuming a diffusion mechanism mainly driven by Mo–Si atomic exchanges to minimize the surface energy, the diffusion dependence with Mo deposition rate has been successfully simulated using a cellular automaton. A refined simulation including Mo cluster formation is also proposed to explain the scenario leading to the full crystallization of Mo layers.     

B4C/Mo/Si high reflectivity multilayer mirror at 30.4 nm

The B4C/Mo/Si high reflectivity multilayer mirror was designed for He-Ⅱ radiation (30.4 nm) using the layer-by-layer method. The theoretical peak reflectivity was up to 38.2% at the incident angle of 5°. The B4C/Mo/Si multilayer was fabricated by direct current magnetron sputtering and measured at the National Synchrotron Radiation Laboratory (NSRL) of China. The experimental reflectivity of the B4C/Mo/Si multilayer at 30.4 nm was about 32.5%. The promising performances of the B4C/Mo/Si multilayer mirror could be used for the construction of solar physics instrumentation.     

EUV damage threshold measurements of Mo/Si multilayer mirrors

We present 1-on-1 and 10-on-1 damage threshold investigations on Mo/Si multilayers with EUV radiation of 13.5 nm wavelength, using a table-top laser produced plasma source based on solid gold as target material. The experiments were performed on different types of Mo/Si mirror, showing no significant difference in single pulse damage thresholds. However, the damage threshold for ten pulses is ??60?% lower than the single pulse threshold, implying a defect dominated damage process. Using Nomarski (DIC) and atomic force microscopy (AFM) we analysed the damage morphologies, indicating a primarily thermally induced damage mechanism. Additionally, we studied the radiation-induced change of reflectivity upon damage of a multilayer mirror.