GaAs多结电池宽光谱ZnS/Al2O3/MgF2减反射膜的设计与分析

 为了提高砷化镓(GaAs)多结太阳电池的光电转换效率，设计了宽光谱(300 nm～1 800 nm)ZnS/Al2O3/MgF2三层减反射膜，分析了各层的厚度及折射率对三层膜系有效反射率的影响。结果表明： 对于整个波长，ZnS厚度对有效反射率的影响要大于Al2O3和MgF2，MgF2厚度对有效反射率的影响最小；适当减小MgF2的折射率或增加ZnS的折射率可得到更低的有效反射率。同时，当 ZnS，Al2O3和MgF2的最优物理厚度分别为52.77 nm，82.61 nm，125.17 nm时，此时最小有效反射率为2.31％。

ZnS/Al2O3/MgF2 antireflection coating with wide spectrum for GaAs multi-junction solar cells

ZnS/Al2O3/MgF2 three-layer antireflection coating with wide spectrum (300 nm～1800 nm) was designed in order to improve the photoelectric conversion efficiency of GaAs multi-junction solar cells. The influence of each layer-s thickness and refractive index on the effective reflectance of film system was analyzed. The results show that the impact of the film thickness of ZnS is greater than that of Al2O3 and MgF2 on the effective reflectance in the whole wavelength,and the impact of MgF2 is the lowest; decreasing the refractivity of MgF2 or increasing the refractivity of ZnS proportionally can get lower effective reflectance. Furthermore, when the optimal physical thickness of ZnS,Al2O3 and MgF2 is 52.77 nm，82.61 nm and 125.17 nm respectively by programming calculation,the minimum effective reflectance is 2.31％.