具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)n/FeMn多层膜.研究结果表明,多层膜的垂直交换偏置场Hex和反铁磁层厚度的关系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期数的增加,垂直交换偏置场Hex相应减小,并且与铁磁层的调制周期数近似成反比关系.(Pt/Co)3/FeMn的垂直交换偏置场Hex已经达到22.3kA/m.为了进一步提高Hex,在Co/FeMn的界面插入Pt层,当Pt层厚度为0.4nm时,Hex达到最大值39.8kA/m.     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

Pt插层对铁磁/反铁磁界面交换耦合的影响

在铁磁层(FM)/反铁磁层(FeMn)耦合体系中插入Pt 插层或对靠近FM/FeMn界面处的FeMn掺杂Pt元素,研究了体系的交换偏置场 H_ex及矫顽力H_c随Pt插层深度 d_Pt与Pt掺杂层厚度t_PtFeMn的变化关系. 实验结果表明,引入Pt插层后NiFe/FeMn(d_Pt)/Pt/FeMn体系的未补偿磁矩(UCS)的数量得到很大的提高,从而对H_ex与H_c 起到增强的作用; 同时, 从实验结果可以推测FeMn层内部UCS的分布深度约为1.3 nm. 另外,对靠近FM/FeMn界面处的FeMn掺杂Pt元素,发现掺入Pt元素后体系的H_ex 得到有效增强, 这是因为掺入Pt元素后体系UCS的数量也得到很大的提高.     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

Pt1-xCux/Co多层膜的结构和磁性

系统地研究了Pt_1-xCu_x/Co多层膜的结构与磁性.除了特定的x=0.10—0.15区间外，在Cu浓度区间x=0.04—0.30内，随着中介Pt层内Cu浓度的增加，导致各向异性K_u和剩余磁化强度M_r⊥的单调下降.这可能是由于Cu原子在Pt层中的无序造成的，使Pt的晶面场对称性发生局域畸变，从而引起上述参数的下降.在特定区域内，可能是形成了PtCu合金的有序相，此时晶场对Co原子的作用就像只有Pt原子一样.这是Cu掺入 关键词：     

退火对Co35(SiO2)65颗粒膜巨磁电阻效应的影响

采用多靶离子束溅射镀膜机制备了一系列不同退火温度的Co₃₅(SiO₂)₆₅（体积百分数）颗粒膜样品,发现样品的巨磁电阻效应随着退火温度T_a的升高而单调下降.应用磁力显微镜对样品的磁结构进行了观测,发现随着退火温度的升高,近邻的Co颗粒的磁矩倾向于平行排列,形成磁畴结构,从而导致Co₃₅(SiO₂)₆₅颗粒膜巨磁电阻效应单调下降. 关键词：     

Pt/Co/Pt/Ni多层膜的磁光特性

用磁控溅射法制备了Pt/Co/Pt/Ni系列样品,其中Ni层具有不同的厚度.通过测量样品的Kerr转角、椭偏率、折射率和吸收率,推算出了四个等效电导张量元σ_1xx,σ_2xx,σ_1xy,σ_2xy随Ni层厚度的变化情况.再结合电导张量元与Kerr角的理论公式,分析了在Ni层厚度的变化过程中,每一个电导张量元对Kerr角的贡献;发现在短波段σ_2xy起主导作用,而在长波段四个电导张量元共同起作用.经分析认为这是由于在Ni层的增厚过程中,Pt 5d带劈裂程度逐渐减小.与纯Pt/Co膜相比,在Ni层的厚度为0.10—0.23nm的范围内样品具有较低的居里温度和较高的Kerr角,这说明Pt/Co/Pt/Ni多层膜具有较高的应用价值. 关键词：     

基于delta-P1近似模型的空间分辨漫反射一阶散射参量灵敏度研究

以delta-P1近似光学模型为基础, 推导了双点源近似下空间分辨漫反射一阶散射参量μ_s'灵敏度的解析式, 并进行了数值分析和比较. 研究表明, 与混合漫射近似模型和漫射近似模型相比, delta-P1 近似模型能更好地描述强散射较强吸收情况下近光源区域生物组织漫反射光子的分布, 且在有效反照率a'>0.83时, 获得最佳优化距离ρ_opt, ρ_opt 随μ_s' 的增大而减小, 且在距光源约2.7—4个输运平均自由程处μ_s'的变化对测量吸收的影响最小. 这项研究对于优化传感器几何结构以及生物组织光学参量的测量具有重要意义.     

Electrical control of antiferromagnetic metal up to 15 nm

Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.     

Effects of controlling Cu spacer inter-diffusion by diffusion barriers on the magnetic and electrical stability of GMR spin-valve devices

An ultra-thin Co or CoFe diffusion barrier inserted at the NiFe/Cu interfaces was revealed to effectively control the electrical and magnetic stability of NiFe/Cu/NiFe-based giant magnetoresistance (GMR) spin-valve spintronics devices (SVSDs) operating at high current density. It was found that the activation energy, E_a, related to the electromigration (EM)-induced inter-diffusion process for the patterned NiFe(3)/Cu(2)/NiFe(3 nm) magnetic multi-layered devices (MMLD) was remarkably increased from 0.52±0.2 eV to 1.17±0.16 eV after the insertion of an ultra-thin Co diffusion barrier at the NiFe/Cu interfaces. The dramatically reduced “current shunting paths” from the Cu spacer to the NiFe thin films and the development of “self-healing process” resulted from the effectively restrained Cu inter-diffusion (intermixing with Ni atoms) due to the diffusion barriers were found to be primarily responsible for the improvement of electrical and magnetic stability. The further investigation on the effects of controlling Cu spacer inter-diffusion by diffusion barriers on the EM and thermomigration (TM)-induced magnetic degradation was carried out for the NiFe/(Co or Co₉₀Fe₁₀)/Cu/(Co or Co₉₀Fe₁₀)/NiFe/FeMn top exchange-biased GMR (EBGMR) SVSDs electrically stressed under the applied DC current density of J=2.5×10⁷ A/cm² (I=16.5∼17.25 mA). It was clearly confirmed that the Co and the CoFe diffusion barriers effectively control the Cu spacer inter-diffusion resulting in a smaller reduction in both GMR ratio and exchange bias field of the EBGMR SVSDs. Furthermore, it was obviously observed that the effects of CoFe diffusion barrier on controlling the Cu spacer inter-diffusion are more significant than that of Co. The effectively reduced Mn atomic inter-diffusion at the NiFe/FeMn interface and the well-maintained interfacial spin-dependent scattering resulted from the control of EM and TM-induced Cu spacer inter-diffusion were the main physical reasons for the significant improvement of magnetic and electrical degradation of top EBGMR SVSDs.     

Regulating the magnetic anisotropy by Hf thickness and heat treatment in Pt/Co/Hf films

Pt/Co/Hf multilayers were prepared by magnetron sputtering, and the magnetic anisotropy was effectively regulated by Hf thickness and heat treatment in Pt/Co/Hf films. The interface microstructures were characterized. The influence of the interface microstructure on magnetic properties was studied. The results show that the magnetic anisotropy in Pt/Co/Hf films is closely related to the interface microstructure, which is influenced by Hf thickness and the heat treatment temperature. Microstructure analysis shows that after the Pt(3)/Co(1.5)/Hf(1) film is heat-treated, the CoO_x content increases, more CoPt(111) forms, the interface is smoother and sharper, and the roughness of the Co/Hf interface decreases. Several factors work together to cause the magnetic anisotropy of the sample to change from in-plane magnetic anisotropy (IMA)to perpendicular magnetic anisotropy (PMA).     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.     

X-ray reflectivity data analysis using Bayesian inference: The study of induced Pt magnetization in Pt/Co/Pt

The induced Pt magnetization in a Pt/Co/Pt thin film structure is studied. The normally nonmagnetic Pt acquires a magnetic moment due to the magnetic proximity effect at the Co–Pt interfaces. Element specific Pt structural and magnetic properties are characterized by synchrotron-based resonant x-ray reflectivity and x-ray resonant magnetic reflectivity measurements. An advanced analysis method based on Bayesian inference is used for model fitting of the x-ray data. Using this method, we retrieve the best fit values of material parameters (e.g., thickness, interfacial roughness) from the data. Analysis of x-ray reflectivity data of this specific system shows that the Pt magnetization and Co–Pt interfacial roughness is significantly different between the top and bottom Pt layers, with both values being larger in the top Pt. The successful application of this Bayesian method to study the magnetic and structural properties of a thin film system demonstrates its effectiveness for x-ray reflectivity data analysis.     

Interface effects on Gd induced disordering of Co films on Pt(111)

Amorphization of epitaxial Co thin films grown on top of a Pt(111) surface has been studied by surface X-ray diffraction after deposition of Gd overlayers. The results indicate strong differences of the disordering process depending on the thickness of the Co film. First basic difference is that thick Co films (15 atomic layers) are only partially amorphized by 4 atomic layers of Gd on top of them, whereas thinner Co films (5 atomic layers) are completely disordered by just 2 atomic layers of Gd. Moreover, amorphization by Gd overlayers induces different stress relaxation processes in both cases. For 15 atomic layers thick Co films a preferential amorphization of the more strained Co grains is observed, leading to an effective relaxation of about ? 0.5% of the in-plane lattice parameter during amorphization, approaching its relaxed value. On the contrary, for 5 atomic layers thick Co films, the initial steps of disordering are accompanied by a stronger increase of the in-plane lattice constant, by about 1.4%, typical of Co–Pt interface alloy formation, followed by a complete amorphization. Furthermore, the magnetic characterization, carried out by magneto-optical Kerr effect and resonant magnetic surface X-ray diffraction, strongly supports that the amorphization of thin Co films is changing the nature of the Co/Pt interface. In particular, as Gd overlayers are deposited, and the amorphization proceeds, the structural disordering of the Co/Pt interface flips its characteristic perpendicular magnetic anisotropy toward in-plane orientation before the complete magnetic depolarization of the interface Pt atoms is reached. All these results confirm a marked dependence of amorphization processes on film thickness, which can be related to the enhanced influence of the nearby film/substrate interface.     

Magnetic relaxation measurements of exchange biased (Pt/Co) multilayers with perpendicular anisotropy

Magnetic relaxation measurements were carried out by magneto-optical Kerr effect on exchange biased (Pt/Co)5/Pt/FeMn multilayers with perpendicular anisotropy. In these films the coercivity and the exchange bias field vary with Pt spacer thickness, and have a maximum for 0.2 nm. Hysteresis loops do not reveal important differences between the reversal for ascending and descending fields. Relaxation measurements were fitted using Fatuzzo’s model, which assumes that reversal occurs by domain nucleation and domain wall propagation. For 2 nm thick Pt spacer (no exchange bias) the reversal is dominated by domain wall propagation starting from a few nucleation centers. For 0.2 nm Pt spacer (maximum exchange bias) the reversal is strongly dominated by nucleation, and no differences between the behaviour of the ascending and descending branches can be observed. For 0.4 nm Pt spacer (weaker exchange bias) the nucleation density becomes less important, and the measurements reveal a much stronger density of nucleation centers in the descending branch.