Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

Pt插层对铁磁/反铁磁界面交换耦合的影响

在铁磁层(FM)/反铁磁层(FeMn)耦合体系中插入Pt 插层或对靠近FM/FeMn界面处的FeMn掺杂Pt元素,研究了体系的交换偏置场 H_ex及矫顽力H_c随Pt插层深度 d_Pt与Pt掺杂层厚度t_PtFeMn的变化关系. 实验结果表明,引入Pt插层后NiFe/FeMn(d_Pt)/Pt/FeMn体系的未补偿磁矩(UCS)的数量得到很大的提高,从而对H_ex与H_c 起到增强的作用; 同时, 从实验结果可以推测FeMn层内部UCS的分布深度约为1.3 nm. 另外,对靠近FM/FeMn界面处的FeMn掺杂Pt元素,发现掺入Pt元素后体系的H_ex 得到有效增强, 这是因为掺入Pt元素后体系UCS的数量也得到很大的提高.     

Magnetic remanent states in antiferromagnetically coupled multilayers

In antiferromagnetically coupled multilayers with perpendicular anisotropy unusual multidomain textures can be stabilized due to a close competition between long-range demagnetization fields and short-range interlayer exchange coupling. In particular, the formation and evolution of specific topologically stable planar defects within the antiferromagnetic ground state, i.e. wall-like structures with a ferromagnetic configuration extended over a finite width, explain configurational hysteresis phenomena recently observed in [Co/Pt(Pd)]/Ru and [Co/Pt]/NiO multilayers. Within a phenomenological theory, we have analytically derived the equilibrium sizes of these “ferroband” defects as functions of the antiferromagnetic exchange, a bias magnetic field, and geometrical parameters of the multilayers. In the magnetic phase diagram, the existence region of the ferrobands mediates between the regions of patterns with sharp antiferromagnetic domain walls and regular arrays of ferromagnetic stripes. The theoretical results are supported by magnetic force microscopy images of the remanent states observed in [Co/Pt]/Ru.     

Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

We report a perpendicular magnetic tunnel junction(p MTJ) cell with a tunnel magnetoresistance(TMR) ratio of nearly 200% at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL) and a synthetic antiferromagnetic(SAF) multilayer [Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL). The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop. The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL. The reason is related to the interlayer exchange coupling(IEC) through a moderately thick Ta spacer layer among SAF-RLs, which generates a moderate and negative bias magnetic field on Co Fe B of RL. However, the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.     

Exchange couplings in magnetic films

Recent advances in the study of exchange couplings in magnetic films are introduced.To provide a comprehensive understanding of exchange coupling,we have designed different bilayers,trilayers and multilayers,such as anisotropic hard/soft-magnetic multilayer films,ferromagnetic/antiferromagnetic/ferromagnetic trilayers,[Pt/Co]/NiFe/NiO heterostructures,Co/NiO and Co/NiO/Fe trilayers on an anodic aluminum oxide(AAO) template.The exchange-coupling interaction between soft-and hard-magnetic phases,interlayer and interfacial exchange couplings and magnetic and magnetotransport properties in these magnetic films have been investigated in detail by adjusting the magnetic anisotropy of ferromagnetic layers and by changing the thickness of the spacer layer,ferromagnetic layer,and antiferromagnetic layer.Some particular physical phenomena have been observed and explained.     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

Tunneling Anisotropic Magnetoresistance in L1_0-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction

We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L1_0-MnGa/FeMn/AlO_x/Pt grown on GaAs(001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L1_0-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L1_0-MnGa due to the exchange-spring effect at the interface and leads to roomtemperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.     

Co-Ni/FeMn双层膜中磁化强度对交换偏置的影响

固定CoNiFeMn双层膜中反铁磁层的厚度,改变CoNi铁磁层的成分来调节磁化强度,从而研究铁磁层的饱和磁化强度对CoNiFeMn双层膜中交换偏置的影响.研究表明,CoNiFeMn界面的交换耦合能U不是一个常量,而是随(MFM)12的增加而线性增加.其原因是铁磁层磁矩通过界面相互作用在反铁磁层中形成的局域交换磁场,在磁场冷却时影响反铁磁层的自旋结构或磁畴结构及双层膜中的交换偏置 关键词： 交换偏置 磁化强度     

Exchange coupling mechanism for magnetization reversal and thermal stability of Co nanoparticles embedded in a CoO matrix

A model providing a semi-quantitative account of the magnetic behavior of Co nanoparticles embedded in a CoO matrix is presented. The results confirm that exchange coupling at the interface between ferromagnetic (FM) and antiferromagnetic (AFM) nanostructures could provide an extra source of magnetic anisotropy, leading to thermal stability of the FM nanoparticles. It is shown that perpendicular coupling between the AFM and FM moments may result in large coercivities. The energy barrier, which works against reversal is due to the AFM susceptibility anisotropy. The experimentally observed exchange bias is tentatively ascribed to pre-existing intrinsic canting of the AFM moments at the interface.     

Oscillatory interlayer exchange coupling and its temperature dependence in [Pt/Co]3/NiO/[Co/Pt]3 multilayers with perpendicular anisotropy

Interlayer exchange coupling that oscillates between antiferromagnetic and ferromagnetic as a function of NiO thickness has been observed in [Pt(5 A)/Co(4 A)](3)/NiO(t(NiO) A)/[Co(4 A)/Pt(5 A)](3) multilayers with out-of-plane anisotropy. The period of oscillation corresponds to approximately 2 monolayers of NiO. This oscillatory behavior is possibly attributed to the antiferromagnetic ordering in NiO. The antiferromagnetic interlayer exchange coupling for the 11 A NiO layer shows an increase in coupling strength with increasing temperature, in agreement with the quantum interference model of Bruno for insulating spacer layers. A coexistence of exchange biasing and antiferromagnetic interlayer exchange coupling has been observed below T=250 K.     

NiFe/FeMn双层膜交换偏置的形成及热稳定性研究

研究了在铁磁(NiFe)/反铁磁(FeMn)双层膜之间，交换偏置的形成过程和热稳定性，特别是NiFe/FeMn的交换偏置作用与FeMn层晶粒尺寸的关系.和以前作者不同的是，本文方法采用非磁性Ni-Fe-Cr合金作缓冲层材料，改变Cr的含量就可以获得不同晶粒尺寸的反铁磁FeMn层.实验表明，晶粒尺寸较小的FeMn产生较强的铁磁/反铁磁交换偏置场；但是，对于较大晶粒的FeMn层，出现交换偏置作用所要的临界厚度较小.这符合Mauri提出的理论模型.交换偏置场的热稳定性实验表明，具有较大晶粒尺寸的FeMn层给出较 关键词： 交换偏置 热稳定性 反铁磁 晶粒尺寸     

Exchange bias in FeNi/FeMn/Gd–Co trilayers: The role of the magnetic prehistory

FeNi/FeMn/Gd_xCo_100-x multilayered films were prepared by magnetron sputtering. The Gd–Co layer had different temperature dependences of the spontaneous magnetization due to the different Gd content. The magnetic properties of the films were determined from hysteresis loops measured in the temperature range 5–473 K. In order to determine the existence of a long-range interaction and a mutual influence of two exchange bias systems through the formation of bulk continuous magnetic structure in the antiferromagnetic layer special cooling procedure with FeNi and Gd–Co magnetizations saturated in a direction parallel or antiparallel to each other was used. The observed difference in the exchange bias between the two cooling configurations was discussed.     

Interlayer coupling between out-of-plane magnetized multilayers across a thin antiferromagnetic spacer

The interlayer exchange coupling between Co/Pt perpendicular-to-plane magnetized layers across a thin IrMn spacer layer was experimentally studied. In contrast to earlier studies on interlayer coupling through antiferromagnetic NiO, which revealed an oscillatory coupling behavior as a function of NiO thickness, a ferromagnetic coupling was observed here in the range of IrMn thickness between 0.6 and 1.5 nm and antiferromagnetic between 1.5 and 2.5 nm. The antiferromagnetic coupling is attributed to an orange peel magnetostatic mechanism whereas the ferromagnetic coupling is attributed to an out-of-plane polarization of the antiferromagnetic IrMn layer induced by the interfacial exchange interaction with the adjacent out-of-plane ferromagnetic layers. Measurements of hysteresis loops versus temperature show that the coupling vanishes at 510 K for t_IrMn=1 nm. This critical temperature is far below the Néel temperature of bulk IrMn, but above the blocking temperature of IrMn/Co bilayers at such thickness. Using a one-dimensional model describing a partial domain wall in the antiferromagnet, we explain the coupling in terms of an out-of-plane tilt of the Mn moments at the IrMn/(Co/Pt) interfaces yielding a weak net polarization of the IrMn. Finally, the non-oscillatory decay of the coupling was attributed to the compensated spin structure of the IrMn in the parallel to the interfaces.     

Creation of an antiferromagnetic exchange spring

We present evidence for the creation of an exchange spring in an antiferromagnet due to exchange coupling to a ferromagnet. X-ray magnetic linear dichroism spectroscopy on single crystal Co/NiO(001) shows that a partial domain wall is wound up at the surface of the antiferromagnet when the adjacent ferromagnet is rotated by a magnetic field. We determine the interface exchange stiffness and the antiferromagnetic domain wall energy from the field dependence of the direction of the antiferromagnetic axis, the antiferromagnetic pendant to a ferromagnetic hysteresis loop. The existence of a planar antiferromagnetic domain wall, proven by our measurement, is a key assumption of most exchange bias models.     

Multiple antiferromagnet/ferromagnet interfaces as a probe of grain-size-dependent exchange bias in polycrystalline Co/Fe50Mn50

We have used ferromagnet/antiferromagnet/ferromagnet trilayers and ferromagnet/antiferromagnet multilayers to probe the grain size dependence of exchange bias in polycrystalline Co/Fe₅₀Mn₅₀. X-ray diffraction and transmission electron microscopy show that the Fe₅₀Mn₅₀ (FeMn) grain size increases with increasing FeMn thickness in the Co (30 Å)/FeMn system. Hence, in Co(30 Å)/FeMn(t_AF Å)/Co(30 Å) trilayers the two Co layers sample different FeMn grain sizes at the two antiferromagnet/ferromagnet interfaces. For FeMn thicknesses above 100 Å, where simple bilayers have a thickness-independent exchange bias, we are therefore able to deduce the influence of FeMn grain size on the exchange bias and coercivity (and their temperature dependence) simply by measuring trilayer and multilayer samples with varying FeMn thicknesses. This can be done while maintaining the (1 1 1) orientation, and with little variation in interface roughness. Increasing the average grain size from 90 to 135 Å results in a fourfold decrease in exchange bias, following an inverse grain size dependence. We interpret the results as being due to a decrease in uncompensated spin density with increasing antiferromagnet grain size, further evidence for the importance of defect-generated uncompensated spins.     

Spiraling spin structure in an exchange-coupled antiferromagnetic layer

Using trilayers of permalloy/FeMn/Co with various thicknesses t(AF) of the antiferromagnetic FeMn, we have observed evidence of a spiraling spin structure within FeMn. For t(AF)<90 A, the turn angle straight theta of the spiral varies as straight theta = (1.76 degrees /A)t(AF).     

Depth magnetization profile of a perpendicular exchange coupled system by soft-x-ray resonant magnetic reflectivity

The magnetic profile across the interface of a perpendicular exchange coupled [NiO/CoO]3/Pt-Co/Pt(111) system is investigated. The magneto-optic Kerr effect reveals a strong coupling between the antiferromagnetic (AFM) oxide and the ferromagnetic (FM) Pt-Co layer, by an increasing coercivity and a rotation of the easy magnetization axis of the FM layer along the AFM spins. Soft x-ray resonant magnetic reflectivity is used to probe the spatial distribution of the out-of-plane magnetization inside the oxide above its ordering temperature. It extends over 1 nm and exhibits a change of sign.     

Three-dimensional noncollinear antiferromagnetic order in single-crystalline FeMn ultrathin films

We present experimental evidence for a three-dimensional noncollinear antiferromagnetic spin structure in ultrathin single-crystalline fcc Fe50Mn50 layers using magnetic circular dichroism photoelectron emission microscopy and x-ray magnetic linear dichroism. Layer-resolved as-grown domain images of epitaxial trilayers grown on Cu(001) in which FeMn is sandwiched between ferromagnetic layers with different easy axes reveal the presence of antiferromagnetic spin components in the film plane and normal to the film plane. An FeMn spin structure with no collinear order in the film plane is consistent with the absence of x-ray magnetic linear dichroism in Fe L3 absorption in FeMn/Co bilayers.     

Domain size and structure in exchange coupled [Co/Pt]/NiO/[Co/Pt] multilayers

We investigate the competing effects of interlayer exchange coupling and magnetostatic coupling in the magnetic heterostructure ([Co/Pt]/NiO/[Co/Pt]) with perpendicular magnetic anisotropy (PMA). This particular heterostructure is unique among coupled materials with PMA in directly exhibiting both ferromagnetic and antiferromagnetic coupling, oscillating between the two as a function of spacer layer thickness. By systematically tuning the coupling interactions via a wedge-shaped NiO spacer layer, we explore the energetics that dictate magnetic domain formation using high resolution magnetic force microscopy coupled with the magneto-optical Kerr effect. This technique probes the microscopic and macroscopic magnetic behavior as a continuous function of thickness and the interlayer exchange coupling, including the regions where interlayer coupling goes through zero. We see significant changes in domain structure based on the sign of coupling, and also show that magnetic domain size is directly related to the magnitude of the interlayer exchange coupling energy, which generally dominates over the magnetostatic interactions. When magnetostatic interactions become comparable to the interlayer exchange coupling, a delicate interplay between the differing energy contributions is apparent and energy scales are extracted. The results are of intense interest to the magnetic recording industry and also illustrate a relatively new avenue of undiscovered physics, primarily dealing with the delicate balance of energies in the formation of magnetic domains for coupled systems with PMA, defining limits on domain size as well as the interplay between roughness, domains and magnetic coupling.     

Exchange bias and domain evolution at 10 nm scales

For a fixed 2 μm×2 μm area of a Co/Pt-CoO perpendicular exchange bias system we image the ferromagnetic (FM) domains for various applied fields with 10-nm resolution by magnetic force microscopy (MFM). Using quantitative MFM we measure the local areal density of pinned uncompensated spins (pinUCS) in the antiferromagnetic (AFM) CoO layer and correlate the FM domain structure with the UCS density. Larger applied fields drive the receding domains to areas of proportionally higher pinUCS aligned antiparallel to FM moments. The data confirm that the evolution of the FM domains is determined by the pinUCS in the AFM layer, and also present examples of frustration in the system.