Influence of magnetic layer thickness on[Fe_(80)Ni_(20) O/SiO_2]_n multilayer thin films

In the present work, a series of [Fe80Ni20–O/SiO2]n multilayer thin films is fabricated using a reactive magnetron sputtering equipment. The thickness of SiO2 interlayer is fixed at 3 nm, while the thickness values of Fe80Ni20–O magnetic films range from 10 nm to 30 nm. All films present obvious in-plane uniaxial magnetic anisotropy. With increasing the Fe80Ni20–O layer thickness, the saturation magnetization increases slightly and the coercivity becomes larger due to the enlarged grain size, which could weaken the soft magnetic property. The results of high frequency magnetic permeability characterization show that films with thin magnetic layer are more suitable for practical applications. When the thickness of Fe80Ni20–O layer is 10 nm, the multilayer film exhibits the most comprehensive high-frequency magnetic property with a real permeability of 300 in gigahertz range.     

A-site ordered quadruple perovskite oxides AA'_3B_4O_(12)

The A-site ordered perovskite oxides with chemical formula AA'_3B_4O_(12)display many intriguing physical properties due to the introduction of transition metals at both A and B sites. Here, research on the recently discovered intermetallic charge transfer occurring between A-site Cu and B-site Fe ions in La Cu_3Fe_4O_(12) and its analogues is reviewed, along with work on the magnetoelectric multiferroicity observed in La Mn_3Cr_4O_(12) with cubic perovskite structure. The Cu–Fe intermetallic charge transfer(LaCu_3~(3+)Fe_4~(3+)O_(12)→ LaCu_3~(2+)Fe_4~(3.75+)O_(12)) leads to a first-order isostructural phase transition accompanied by drastic variations in magnetism and electrical transport properties. The La Mn_3Cr_4O_(12) is a novel spindriven multiferroic system with strong magnetoelectric coupling effects. The compound is the first example of cubic perovskite multiferroics to be found. It opens up a new arena for studying unexpected multiferroic mechanisms.     

Multilayer relaxation of Rh(311)

The multilayer relaxation of the Rh(311) surface was investigated by means of LEED structure determination both for vertical and surface parallel (registry) relaxations. Excellent agreement between experimental and calculated spectra could be achieved mirrored by a minimum Pendry R-factor R = 0.174. The first three layer spacings are oscillatorily relaxed by Δd₁₂/d₀ = −14.5 ± 1.8%, Δd₂₃/d₀ = +4.9 ±2.0% and Δd₃₄/d₀ = −1.0 ±2.0%. There seems to be a coherent registry shift of the fir Δs = 0.03 ± 0.07 Å which, however, is within the error limits of the structure determination. Moreover, an energy dependent inner potential is detected. The results are discussed in comparison to equivalent surfaces of other materials as well as for the less open surfaces of rhodium.     

Electrical characteristics and low-temperature sintering of BiFeO3-modified Pb(Zr,Ti)O3–Pb(Fe2/3W1/3)O3–Pb(Mn1/3Nb2/3)O3 ceramics with ZnO addition

Effects of ZnO addition on electrical properties and low-temperature sintering of BiFeO₃-modified Pb(Zr,Ti)O₃–Pb(Fe_2/3W_1/3)O₃–Pb(Mn_1/3Nb_2/3)O₃ were investigated. The investigations revealed that the sintering temperature can be decreased to 950 °C, and the favorable properties were obtained with 0.10 wt% ZnO added ceramics. The electrical properties were as follows: d₃₃ = 313 pC/N, K_p = 0.56, tan δ = 0.0053, ε_r = 1407 and T_c = 295 °C, which showed that this system was a promising material for the multilayer devices application.     

Design and fabrication of nanometric ZnS/Ag/MoO3 transparent conductive electrode and investigating the effect of annealing process on its characteristics

In this paper, a ZnS/Ag/MoO₃ (ZAM) nano-multilayer structure is designed theoretically and optimum thicknesses of each layer are calculated. ZnS/Ag/MoO₃ multilayer films with optimized thicknesses have also been fabricated on glass substrates by thermal evaporation method at room temperature. The structural, electrical and optical properties of ZnS/Ag/MoO₃ multilayer are investigated with respect to the variation of annealing temperature. X-ray diffraction patterns show that increase in annealing temperature increases the crystallinity of the structures. High-quality multilayer films with the sheet resistance of 4.5 Ω/sq and the maximum optical transmittance of 85% at 100 °C annealing temperature are obtained. The allowed direct band gap for annealing at different temperatures is estimated to be in the range of 3.37–3.79 eV. The performance of the ZAM multilayer films are evaluated using a predefined figure of merit. These multilayer films can be used as transparent conductive electrodes in optoelectronic devices such as solar cells and organic light emitting diodes.     

Dielectric and infrared properties of SrTiO3 single crystal doped by 3d （V,Mn, Fe,Ni） and 4f （Nd,Sm, Er） ions

In this study, the effects of doping by 3d （V, Mn, Fe, Ni） and 4f （Nd, Sm, Er） ions on dielectric and infrared properties of SrTiO3 （STO） single crystals are investigated. It is well known that doping of the SrTiO3 can change the dielectric properties of the STO from an insulator to an n-type semiconductor, and even to a metallic conductor. Dielectric and infrared （IR） properties of the undoped STO and doped STO single crystals are analyzed using dielectric spectroscopy （80 kHz-5 MHz）, transmission （200 cm^-1-4000 cm^-1）, and reflection spectroscopy （50 cm^-1-2000 cm^-1）. It is found that doping by the 3d ions reduces the value of dielectric permittivity, but the trend of temperature dependence of the dielectric permittivity remains almost unchanged. On the other hand, dielectric spectroscopy measurements for samples doped by 4f ions show the anomalous behaviors of the dielectric permittivity at temperatures around the temperature of the structural phase transition. There are two fractures of temperature dependences of inverse dielectric permittivity εr^-1 （T）. Transmittance spectroscopy measurements show that there are differences in the shape of the spectrum in the mid-IR region between the undoped STO and the one doped by 4f ions. The differences in the reflectance spectrum between the STO：Nd and STO are analyzed in detail.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

La2/3(Ca0.65Ba0.35)1/3MnO3/0.035TiO2/xCuO复合体系电输运和磁电阻效应研究

用甘氨酸-硝酸盐(GNP)方法合成出La2/3(Ca0.65 Ba0 35)1/3MnO30.035/TiO2/xCuO纳米复合材料(x=0;0.23;0.25;0.27;0.30).通过X射线衍射、Raman光谱、扫描电子显微镜和磁电阻效应测试,对合成产物的结构及性能进行表征.结果表明,样品的对称性由立方向正交结构畸...     

In替代(La2/3Ca1/3)(Mn(3-2x)/3In2x/3)O3体系巨磁电阻效应的研究

采用固态反应法制备了In替代的(La_2/3Ca_1/3)(Mn_(3-2x)/3In_2x/3)O₃(x=0.00，0.10，0.15)体系.通过测量其零场和1.6T磁场下样品的电阻-温度关系以及一定温度下磁电阻率与磁场的关系.发现随In³⁺替代量的增加其磁电阻峰和电阻峰均向低温方向移动，同时巨磁电阻效应减弱，磁电阻峰也展宽.这是由于In³⁺替代量的变化，引起 关键词：     

钙钛矿锰氧化物(La_(1-x)Eu_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.15)的磁性和电性研究

通过传统固相反应法制备了钙钛矿锰氧化物(La1-xEux)4/3Sr5/3Mn2O7(x=0,0.15)多晶样品,并且对其磁性和电性进行了研究.磁性测量表明:随着温度的降低,样品经历了一个复杂的转变过程,在温度为T*时经历二维短程铁磁有序转变,在温度为TC时进入三维长程铁磁态.随着Eu的掺杂,T*和TC减小,并且样品(La0.85Eu0.15)4/3Sr5/3Mn2O7在低温区表现出自旋玻璃行为.电性质测量表明:在母体La4/3Sr5/3Mn2O7中La位掺杂Eu后电阻率明显变大,金属绝缘转变温度TMI降低,磁电阻峰值增大.这些影响归因于较小的Eu3+离子替代La3+离子导致平均离子半径减小,晶格发生畸变.此外,较小的Eu3+离子优先占据层间岩盐层的R-site,使La3+,Sr3+,Eu3+离子在(La0.85Eu0.15)4/3Sr5/3Mn2O7中的分布更加有序,所以x=0.15的样品的ρ-T曲线只有一个峰.     

PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr,Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES

Ferroelectric Pb(Zr, Ti)O₃ thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with P_r=15μC/cm², E_c= 50kV/cm, high resistivity and high dielectric constant.     

Structural stabilities and electrical properties of Ba_8Ga_(16-x)Cu_xSn_(30) single crystals under high temperatures

Single crystalline samples of type-I and type-VIII Ba_8Ga_(16-x)Cu_xSn_(30)(x = 0,1) clathrates are prepared by the Snflux method.Effects of Cu-doping on stability and electrical properties of Ba8Ga16Sn30 single crystal are explored by first-principle and experiment.All samples are heated to different high temperatures and maintained at these temperatures for 120 min and then cooled to room temperature to explore their structural stabilities.Results from DTA and powder xray diffraction analysis indicate that type-I Ba_8Ga_(16)Sn_(30) structure is transformed into type-VIII phase after the sample has been heated to 185℃.Type-VIII BGS is stable during heating and cooling,but type-VIII Ba_8Ga_(15)CuSn_(30) decomposes into Sn and Ba(Ga/Sn)_4 during cooling.Meanwhile,the electrical properties of type-I samples are measured,their electrical conductivities are enhanced,and the Seebeck efficient is reduced with Cu substitution.The type-I samples after phase transformations show the electrical characteristics of type-VIII samples.     

Effect of oxygen nonstoichiometry on the thermal and electrophysical properties of layered ferrocuprates LnBaCuFeO5 + δ (Ln = La, Pr; (0 ≤ δ ≤ 0.5)

The influence of the oxygen content (5 + δ) on the structure, thermal expansion, and electrical properties of the LnBaCuFeO_{5 + δ} phases (Ln = La, Pr) is investigated. It is found that, for 0 ≤ δ ≤ 0.25, the unit cell parameters of the ferrocuprates decrease and the linear thermal expansion coefficient increases linearly with increasing δ. In the range 0.25 ≤ δ ≤ 0.50, the thermal expansion coefficient and the structural parameters of the samples depend weakly on their oxygen nonstoichiometry δ. The LnBaCuFeO_{5 + δ} ferrocuprates (0 ≤ δ ≤ 0.48) are p-type semiconductors with the electrical resistivity ρ, thermopower coefficient S, and activation energy for electrical conduction E _A decreasing with increasing δ and the dependence E _A = f(δ) being close to linear.     

Periodicity and orientation dependence of electrical properties of [(Pb0.90La0.10)Ti0.975O3/PbTiO3]n (n = 1-6) multilayer thin films

The [(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃]_n (PLT/PT)_n (n = 1-6) multilayer thin films were deposited on the PbO_x(1 0 0)/Pt/Ti/SiO₂/Si substrates by RF magnetron sputtering method. The layer thickness of PbTiO₃ in one periodicity kept unchanged, and the layer thickness of (Pb_0.90La_0.10)Ti_0.975O₃ is varied. The electrical properties of the (PLT/PT)_n multilayer thin films were investigated as a function of the periodicity (n) and the orientation. The studied results show that the PbO_x buffer layer results in the (PLT/PT)_n films’ (1 0 0) orientation, and the (1 0 0)-oriented (PLT/PT)_n multilayer thin films with n = 2 exhibit better pyroelectric properties and ferroelectric behavior than those of (PLT/PT)_n films with other periodicities and orientations. The underlying physical mechanism for the enhanced electrical properties of (PLT/PT)_n multilayer thin films was carefully discussed in terms of the periodicities and orientations.     

Preparation of multi-walled carbon nanotube–Fe composites and their application as light weight and broadband electromagnetic wave absorbers

Multi-walled carbon nanotube （MWCNT）-Fe composites were prepared via the metal organic chemical vapor deposi- tion by depositing iron pentacarbonyl on the surface of MWCNTs. The structural and morphological analyses demonstrated that Fe nanoparticles were deposited on the surface of the MWCNTs. The electromagnetic properties of the MWCNTs were significantly changed, and the absorbing capacity evidently improved after the Fe deposition on the MWCNT surface. A minimum reflection loss of -29.4 dB was observed at 8.39 GHz, and the less than -10 dB bandwidth was about 10.6 GHz, which covered the whole X band （8.2-12.4 GHz） and the whole Ku band （12.4-18 GHz）, indicating that the MWCNT-Fe composites could be used as an effective microwave absorption material.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Structure distortion,optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl 3 to SbCl 3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550°C for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10 8 , 3.26×10 8 , 5.23×10 8 , and 6.97×10 8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.     

Remanence Enhancement Effect in Ni_(0.7)Zn_(0.3)Fe_2O_4/Co_(0.8)Fe_(2.2)O_4 Ferrite Multilayer Film

Ni_(0.7)Zn_(0.3)Fe_2O_4/Co_(0.8)Fe_(2.2)O_4(NZFO/CFO) multilayer films are fabricated on Si(100) substrates by the chemical solution deposition method.The microstructure and magnetic properties are systematically investigated.The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 300 nm.The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films,which is in favor of the design and fabrication of modern electronic devices.     

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.     

(Y,G d)(P,V)O4:Eu3+荧光粉的发光特性

采用高温固相方法合成了(Y,Gd)(P,V)O₄:Eu³⁺,经X射线结构分析确定为四方晶系,体心结构,空间群为I4₁/amd[141]。研究了(Y,Gd)(P,V)O₄:Eu³⁺在VUV及UV激发下的光谱特性,讨论了激活剂Eu³⁺的浓度对发光亮度的影响。(Y,Gd)(P,V)O₄:Eu³⁺荧光粉的发射主峰在619nm,证明Eu³⁺离子占据了非反演对称中心的位置。在(Y,Gd)(P,V)O₄:Eu³⁺(监控619nm)的激发谱,有一个中心位于156nm的吸收带,它属于基质的吸收带。将(Y,Gd)(P,V)O₄:Eu³⁺的发光性能与PDP商用红粉(Y,Gd)BO₃:Eu³⁺进行了比较。(Y,Gd)(P,V)O₄:Eu³⁺的发射主峰在619nm,比发射主峰为593nm的(Y,Gd)BO₃:Eu³⁺色纯度好,是一种很有应用前景的发光材料。