类钙钛矿化合物Ca(Mn2 Cu1)Mn4 O12的磁性与磁电阻效应

利用固相反应法制备了名义成分为Ca(Mn2 Cu1 )Mn4 O1 2 的类钙钛矿锰氧化物 .x射线衍射表明 ,为了获得较为致密的样品和减小杂相含量 ,可以采用高温烧结再在 10 73K长时间空气中退火的制备方法 .样品在低温下同时存在铁磁相和反铁磁相 ,由于反铁磁相的存在导致样品在 4 5K时的磁化强度显著降低 ,并在 8T的高磁场下仍未达到饱和 .样品呈半导体导电性质 ,在 85K和 6T磁场下磁电阻比的最大值可达 - 4 6 % .     

层状钙钛矿La1.3Sr1.7Mn2-xCuxO7的磁性及电特性

通过固相反应烧结法成功制备了层状钙钛矿La1.3Sr1.7Mn2-xCuxO7多晶,主要研究了其磁电特性.结果表明,样品为Sr3Ti2O7型钙钛矿结构.随着温度的降低,其磁性经历了一个很复杂的转变过程.当x=0时,在T*=231 K出现二维短程铁磁有序,在Tc=114 K出现三维长程铁磁有序,在TN=56 K出现倾斜的反铁磁转变.当x=0.05时,Cu替代使得T*,Tc和TN减小.其电特性表明,La1.3Sr1.7Mn2-xCuxO7多晶呈现出双峰现象,这是由于钙钛矿结构锰氧化物共生现象造成的.虽然5%Cu替代,降低了金属一绝缘体转变温度,但是却增强了磁电阻效应.     

双层钙钛矿锰氧化物LaDy_(0.2)Sr_(1.8)Mn_2O_7的磁性和电性研究

双层钙钛矿锰氧化物LaDy_(0.2)Sr_(1.8)Mn_2O_7是采用传统固相反应法制备得到的多晶样品,通过测量样品的磁化强度与温度变化曲线(M-T)以及不同温度下磁化强度与外加磁场的变化曲线(M-H)对样品的磁性进行了研究.结果表明,在15K~375K的整个温度测量范围内,在类Griffiths相温度(T_G≈350K)以上,样品处于纯顺磁态;在奈尔温度(T_N≈200K)~T_G范围内,随温度的降低,样品的铁磁性逐渐增强;在T_N以下,随温度的降低,样品出现了团簇玻璃行为,反铁磁性增强,铁磁性减弱,系统处于反铁磁-铁磁共存态.另外,通过居里外斯拟合以及Griffiths相模型拟合,发现样品在T_G以下存在类Griffiths相.通过对样品LaDy_(0.2)Sr_(1.8)Mn_2O_7电性的分析发现,磁电阻会受到掺杂的影响而减小,由于掺杂量过大,使得金属-绝缘温度消失了,从而样品表现出了绝缘态的特性.     

钙钛矿型锰氧化物(La_(0.8)Eu_(0.2))_(4/3)Sr_(5/3)Mn_2O_7的磁性和电性研究

采用传统固相反应法制备钙钛矿型锰氧化物(La0.8Eu0.2)4/3Sr5/3Mn2O7多晶样品,X-射线衍射分析表明,样品(La0.8Eu0.2)4/3Sr5/3Mn2O7结构呈现良好的单相.通过磁化强度随温度的变化曲线(M-T)、不同温度下磁化强度随磁场的变化曲线(M-H)和电子自旋共振谱发现:在300 K以下,随着温度的降低,样品先后经历了二维短程铁磁有序转变(T2D C≈282K)、三维长程铁磁有序转变(T3D C≈259K)、奈尔转变(T N≈208K)和电荷有序转变(T CO≈35K);样品(La0.8Eu0.2)4/3Sr5/3Mn2O7在T N以下,主要处于反铁磁态;在T3D C达到370 K时,样品处于铁磁-顺磁共存态,在370 K以上时样品进入顺磁态.此外,分析电阻率随温度的变化曲线(ρ-T)得到:样品在金属-绝缘转变温度(T P≈80K)附近出现最大磁电阻值,其位置远离T3D C,表现出非本征磁电阻现象,其磁电阻值约为61%.在T CO以下,电阻率出现明显增长,这是由于温度下降使原本在高温部分巡游的e g电子开始自发局域化增强所致.通过对(La0.8Eu0.2)4/3Sr5/3Mn2O7的ρ-T曲线拟合,发现样品在高温部分的导电方式基本遵循小极化子的导电方式.     

LaB0.5Mn0.5O3(B=Co,Fe)的磁性及电输运特性的研究

采用固相烧结工艺制备了钙钛矿锰氧化物LaCo0.5Mn0.5 O3和LaFe0.5 Mn0.5O3,系统研究了样品的磁性、电输运特性和磁电阻效应.室温下LaCo0.5M0.5O3和LaFe0.5Mn0.5O3均呈现顺磁行为.电子顺磁共振得到LaFe0.5Mn0.5O3样品的朗德因子g=1.9661,与Fe3+离子(g=...     

铁磁性锰氧化物掺杂的ZnO压敏电阻性能研究

利用通常的电子陶瓷制备工艺制备了铁磁性锰氧化物La_07Sr_03MnO₃掺杂的ZnO陶瓷. 晶界处存在La_07Sr_03MnO₃(LSMO)和LaMnO₃(LMO)两种杂相. 样品中绝缘相LMO的含量显著影响着样品的电学性能. 掺杂后的样品仍具有一定的铁磁性. 在样品上施加磁场后,样品电阻值增加,表现为正磁电阻性质. 正磁电阻的出现,是由于磁场的存在 关键词： ZnO 压敏电阻 锰氧化物 正磁电阻     

双层钙钛矿锰氧化物La1.2-xDyxSr1.8Mn2O7(x=0.05)多晶的磁性研究

多晶样品La1.2-xDyxSr1.8Mn2O7(x=0.05)采用传统固相反应法制备,通过测量样品的磁化强度与温度变化曲线(M-T)以及不同温度下磁化强度与外加磁场的变化曲线(M-H)对样品的磁性进行了研究。研究发现,在15 K-400 K的测量温度范围内,在类Griffiths相温度(TG≈360 K)以上,样品处于纯顺磁态;在奈尔温度(TN≈183 K)- TG范围内,系统处于反铁磁-铁磁共存态,存在类Griffiths相,随温度的降低,样品的铁磁性逐渐增强;在TN以下,随温度的降低,铁磁性逐渐减弱,反铁磁性增强,样品呈现出了团簇玻璃行为。另外,在居里温度Tc≈210 K附近,系统发生了二级相变,样品在7 T外加磁场下的最大磁熵变绝对值为0.6 J/(kg·K)。     

相分离Eu0.5Sr0.5MnO3体系中的场诱导磁相变及输运特性研究

研究了半掺杂相分离锰氧化物Eu_0.5Sr_0.5MnO₃样品的结构和电磁输运特性.在半掺杂情况下,该样品呈O′型正交结构,表明样品存在典型的Jahn-Teller畸变;在75 K附近样品的顺磁/反铁磁背景中开始出现铁磁相,在更低的温度42 K,4000 A/m磁场下M-T的场冷曲线和零场冷曲线出现明显分岔,样品的交流磁化率实部随温度的变化曲线中也在42 K观察到尖峰的出现,表现出团簇玻璃行为.在无外加磁场下该样品在 关键词： 多相竞争 半掺杂 铁磁团簇     

磁场诱导Gd5Ge4体系的低温输运跳跃和相分离研究

报告了作者对Gd_5Ge_4合金样品进行了磁化和电输运测量的研究结果,实验表明,磁化强度随外磁场的增加而出现台阶式跳跃,磁转变的可逆性与温度存在有密切的关联.在由磁场导致的磁转变附近电阻率随着磁场的增加亦表现出台阶式磁电阻现象,并在不同温区表现出正负不同的磁电阻效应,4.2K时呈现正磁电阻效应,而在16和20K时呈现出负磁阻效应,即铁磁相的阻值小于反铁磁相的阻值.结果证明了在Gd_5Ge_4中存在的典型相分离特征,从而在磁场诱导下发生了反铁磁到铁磁的转变,并对这种奇异磁电阻效应的物理机制进行了讨论.     

Ag和K掺杂对La4/5Sr1/5MnO3电输运性质及磁电阻的影响

用固相反应法制备La4/5Sr1/5MnO3及在其A位分别掺K、Ag系列样品,通过X射线衍射(XRD)谱,电阻率-温度(ρ～T)曲线,磁电阻-温度(MR～T)曲线,研究了在A位同时掺入一价、二价元素而保持Mn3+/Mn4+比值(摩尔比n(A)/n(B))不变的钙钛矿锰氧化物体系A位离子半径及A位离子的无序度σ2对电输运性质及磁电阻的影响.结果表明:A位离子的无序度σ2对电输运性质的影响比A位平均离子半径对电输运性质的影响大;电阻率曲线出现双峰是由于表面相电阻率与体相电阻率竞争的结果;MR的温度稳定性是本征磁电阻与隧穿磁电阻竞争的结果;掺K样品在253～175K温区MR从8.1%缓慢上升到9.5%,掺Ag样品在260K以下温区MR都在7.4%以上,纯的La4/5Sr1/5MnO3样品在318～259K温区MR都在7.0%以上,在如此宽温区MR几乎不变有利于MR的实际应用.     

Magnetic properties of multiferroics-semiconductors Eu(1-x)Ce(x)Mn2O5

Studies of magnetization, magnetoresistance, and magnetic oscillations in semiconductor-multiferroics Eu(1-x)Ce(x)Mn2O5 (x = 0.2-0.25) (ECMO) at temperatures ranging from 5 to 350 K in magnetic fields up to 6 T are presented. It is shown that phase separation and charge carrier self-organization in the crystals give rise to a layered superstructure perpendicular to the c axis. An effect of magnetic field cycling on the superstructure, magnetization, and magnetoresistance is demonstrated. X-ray diffraction studies of ECMO demonstrating the effect of magnetic field on the superstructure are presented. The de Haas-van Alphen magnetization oscillations in high magnetic fields and the temperature-induced magnetic oscillations in a fixed magnetic field are observed at low temperatures. Below 10 K the quantum corrections to magnetization due to the weak charge carrier localization in 2D superlattice layers occur. It is shown that at all the temperatures the Eu(1-x)Ce(x)Mn2O5 magnetic state is dictated by superparamagnetism of isolated ferromagnetic domains.     

Magnetocaloric effects in Mn1.35Feo.65P1-xSix compounds

The structural and magnetocaloric properties of Mn1.35Fe0.65P1-xSix compounds are investigated.The Sisubstituted compounds,Mn1.35Fe0.65P1-xSix with x = 0.52,0.54,0.55,0.56,and 0.57,are prepared by high-energy ball milling and the solid-state reaction.The X-ray diffraction shows that the compounds crystallize into the Fe 2 P-type hexagonal structure with space group P■2m.The magnetic measurements show that the Curie temperature of the compound increases from 253 K for x = 0.52 to 296 K for x = 0.56.The isothermal magnetic-entropy change of the Mn1.35Fe0.65P1-xSix compound decreases with the Si content increasing.The maximal value of the magnetic-entropy change is about 7.0 J/kg·K in the Mn1.35Fe0.65P0.48Si0.52 compound with a field change of 1.5 T.The compound quenched in water possesses a larger magnetic entropy change and a smaller thermal hysteresis than the non-quenched samples.The thermal hysteresis of the compound is less than 3.5 K.The maximum adiabatic temperature change is about 1.4 K in the Mn1.35Fe0.65P0.45Si0.55 compound with a field change of 1.48 T.     

High temperature ferromagnetism in GaAs-based heterostructures with Mn delta doping

We show that suitably designed magnetic semiconductor heterostructures consisting of Mn delta (delta)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the two-dimensional hole gas wave function, realized remarkably high ferromagnetic transition temperatures (T(C)). A significant reduction of compensative Mn interstitials by varying the growth sequence of the structures followed by low-temperature annealing led to high T(C) up to 250 K. The heterostructure with high T(C) exhibited peculiar anomalous Hall effect behavior, whose sign depends on temperature.     

Investigation of atomic anti-site disorder and ferrimagnetic order in the half-metallic Heusler alloy Mn(2)V Ga

The band structure calculation for the compound Mn(2)VGa carried out using the plane wave self-consistent field package with generalized gradient approximation shows that the compound is nearly half-metallic at the equilibrium lattice parameter. However, theoretical investigations have shown that a certain percentage of atomic anti-site disorder can destroy the half-metallic nature of the sample. Hence it is important to quantify the site disorder in these systems. We have deduced the percentage of atomic anti-site disorder from the refinement of the higher angle room temperature (300?K) neutron diffraction (ND) pattern and it was observed to be roughly 8% in our sample. The field variation of resistance recorded at different temperatures shows a positive slope at low temperatures and a negative slope at higher temperatures, indicating the half-metallic character at low temperatures. The ab?initio calculations predict a ferrimagnetic ground state for this system. The analysis of the magnetic structure from ND data measured at 6?K yields magnetic moment values of 1.28?μ(B) and -0.7?μ(B) for Mn and V, respectively, confirming the ferrimagnetic ordering.     

Competition between band and hopping carrier transport in Ge : Mn thin films

Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.     

(Sr,Mn)TiO3: a magnetoelectric multiglass

By close analogy with multiferroic materials with coexisting long-range electric and magnetic orders a "multiglass" scenario of two different glassy states is observed in Sr(0.98)Mn(0.02)TiO(3) ceramics. Sr-site substituted Mn2+ ions are at the origin of both a polar and a spin glass with glass temperatures T(g) approximately equal to 38 K and < or =34 K, respectively. The structural freezing triggers that of the spins, and both glassy systems show individual memory effects. Thanks to strong spin-phonon interaction within the incipient ferroelectric host crystal SrTiO3, large higher order magnetoelectric coupling occurs between both glass systems.     

热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响

通过Mn离子注入非故意掺杂GaN外延层制备了GaN:Mn薄膜,并研究了退火温度对GaN:Mn薄膜的微结构、光学及磁学特性的影响.对不同退火温度处理后的GaN:Mn薄膜的拉曼谱测试显示,出现了由与离子注入相关的缺陷的局域振动(LV)和(Ga,Mn)N中Mn离子的LV引起的新的声子模.在GaN:Mn薄膜的光致发光谱中观察到位于2.16,2.53和2.92 eV处的三个新发光峰(带),其中位于2.16 eV处的新发光带不能排除来自Mn相关辐射复合的贡献.对GaN:Mn薄膜的霍尔测试显示,退火处理后样品表现出n型体材料特征.对GaN:Mn薄膜的振动样品磁强计测试显示,GaN:Mn薄膜具有室温铁磁性,其强弱受Mn相关杂质带中参与调节磁相互作用的空穴浓度的影响.     

Temperature‐dependent Raman scattering of KDP:Mn (0.9% weight of Mn) crystal

Low temperature polarized Raman scattering measurements of KDP:Mn (0.9% weight of Mn) were performed at temperatures ranging from 14 to 300 K, over the spectral range 50–1250 cm⁻¹. In the present results we can see that the spectra of undoped and doped samples at room temperature are very different. Doped samples maintain the KDP structure as tetragonal, with the same factor group D_2d but with a different class of the space group, different from the original 12. The results show that the crystal undergoes a phase transition at temperature between 115 and 97 K, which is much lower than the phase transition temperature of undoped KDP that occurs at 122 K, where the crystal changes from the para‐electric to the ferroelectric phase. Further, at very low temperature (14 K) we can see that the spectra of KDP:Mn (0.9% weight of Mn) present a behavior very different from the behavior presented by the spectra of KDP doped with low Mn concentration. Copyright © 2010 John Wiley & Sons, Ltd.     

Giant magnetic moments of nitrogen-doped Mn clusters and their relevance to ferromagnetism in Mn-doped GaN

Calculations based on density-functional theory show that the stability and magnetic properties of small Mn clusters can be fundamentally altered by the presence of nitrogen. Not only are their binding energies substantially enhanced, but also the coupling between the magnetic moments at Mn sites remains ferromagnetic irrespective of their size or shape. In addition, these nitrogen-doped Mn clusters carry giant magnetic moments ranging from 4mu(B) in MnN to 22mu(B) in Mn5N. It is suggested that the giant magnetic moments of MnxN clusters may play a key role in the ferromagnetism of Mn-doped GaN which exhibit a wide range (10-940 K) of Curie temperatures.     

NMR studies of magnetic properties in Heusler-type Mn 3 Si

In order to microscopically investigate the magnetic properties of both paramagnetic and antiferromagnetic phases in Mn₃Si (T _N?=?23 K), the ⁵⁵Mn NMR has been carried out at temperatures between 2.2 K and 300 K. The temperature dependences of the spectrum, Knight shift (or resonance frequency shift) and spin-lattice relaxation time T ₁ of ⁵⁵Mn NMR have been measured. In the paramagnetic phase, only one resonance spectrum can be obtained. The observed spectrum is identified to be a signal corresponding to the Mn(II) site. In the antiferromagnetic phase, two different spectra corresponding to the Mn(I) and Mn(II) sites are found at the resonance frequencies of 145 and 6 MHz, respectively, by the zero field NMR at 4.2 K. From these results, the internal magnetic fields on the ⁵⁵Mn(I) and ⁵⁵Mn(II) nuclei are found to be 13.6 and 0.6 T, respectively. According to the NMR results, the helical structure in incommensurate Mn spin states is better explained compared with the transverse sinusoidal structure.