Spectral properties of Ce3+ doped yttrium lanthanum oxide transparent ceramics

Ce3+-doped yttrium lanthanum oxide (Y0.9La0.1)2O3 transparent ceramics is fabricated with nanopowders and sintered in H2 atmosphere. The spectral properties of Ce:(Y0.9La0.1)2O3 transparent ceramics are investigated. There appear two characteristic absorption peaks of Ce3+ ions at 230 nm and 400 nm, separately. It is found that Ce3+ ions can efficiently produce emission at 384 nm from (Y0.9La0.1)2O3 transparent ceramic host, while the emission is completely quenched in Re2O3 (Re=Y, Lu, La) host materials.     

A Novel Ce3＋/Tb3＋ Codoped Phosphate Glass as Down-Shifting Materials for Enhancing Efficiency of Solar Cells

For the purpose of improving conversion efficiency of solar cells by applying the effect of the wavelength conversion of rare earth ions, photo-luminescence and excitation spectrums of Ce3＋-Tb3＋ doped phosphate glass are investigated. Results show that incorporating Ce3＋ ions to Tb3＋-doped phosphate glass can greatly increase the absorption coefficient in the range 300-400 nm and then the energy transfer （ET） from Ce3＋ to Tb3＋ occurs. In addition, increasing Tb3＋ concentration in Ce3＋/Tb3＋ co-doped phosphate glass can greatly enhance the ET efficiency and 545 nm emission intensity. This shows that Ce3＋/Tb3＋ co-doped phosphate glass would be a promising down-shifting material for enhancing the efficiency of solar cells.     

Spectra Analysis of a Novel Ti-Doped LiAlO2 Single Crystal

LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti： LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively： The peaks at 716nm and 798nm may stem from the VLi^＋ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4＋-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.     

Irradiation effects of graphene and thin layer graphite induced by swift heavy ions

Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the "blue shift" of 2D bond and the "red shift" of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).     

Comparison of Secondary Ion Emissions from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

The emission yields of H, H2, H3 and heavy ions from carbon nanotubes under bombardments of Si and Si2 clusters in an energy range of 0.3-3 MeV per atom are measured by using the time-of-flight technique (TOF). The emission yields of the secondary ions increase with increasing energy of Si and the electronic stopping processes play an important role. The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.     

Photoluminescence properties of Y_(0.75-x)Gd_xAl_(0.10)BO_3:Eu_(0.10)~(3+),0.05R~(3+)(R= Sc,Bi) (0.00 ≤ x ≤ 0.45)

Y 0.75 -x Gd x Al 0.10 BO 3 :Eu0.10 3+, 0.05R 3+ (R=Sc, Bi) (0.00 ≤ x ≤ 0.45) powder samples are prepared by solid-state reaction and their luminescence properties are investigated. With the replacement of Y 3+ ions by Sc 3+ (or Bi 3+ ) and Gd 3+ ions in (Y,Al)BO 3 :Eu, the intensities of emission at 254 and 147 nm are remarkably improved, because Sc 3+ ions can absorb UV light and transfer the energy to Eu 3+ ions efficiently. Moreover, Gd 3+ and Bi 3+ ions act as an intermediate "bridge" between the sensitizer and the activator (Eu 3+ ) in energy transfer to produce light in the (Y, Gd)BO 3 :Bi 3+ , Eu 3+ system more effectively. After doping an appropriate concentration of Gd 3+ into Y 0.50 Gd 0.25 Al 0.10 BO 3 :Eu0.01 3+ , Bi0.05 3+ , the emission intensity reaches its maximum, which is nearly 110% compared with the red commercial phosphor (Y,Gd)BO 3 :Eu and better chromaticity coordinates (0.650, 0.350) are obtained.     

Growht and defects in YbxY1—xAl3（BO3）4 crystals

YbxY1-xAl3(BO3)4(x=0.1,0.07 and 0)crystals have been grown by the flux method.The growth defects of YbxY1-xAl3(BO3)4 crystals were detected by X-ray topography.It is found that the perfcetion of YbYAB crystal with low Yb dopant is better than that with high Yb dopant.In Yb0.1Y0.9Al3(BO3)4 crystal,growht bands,growth boundaries,grown-in dislocations and inclusions were observed.Howver,the densities of growth defects for Yb0.07Y0.93Al3(BO3)4 and YAl3(BO3)4 are low and no obvious inclusions are observed in these crytals.In addition,growth twins wrer detected in YbxY1-xAl3(BO3)4 crystal by using the chemical etching method.It is found that the growth twins occur frequently in Yb0.01Y0.9Al3(BO3)4 crystal whereas no growth twin appears in YAl3(BO3)4 crystal. Based on the experimental observations,the formation mechanism of growth twins is discussed.In the meantime,the effective measures for reducing the growth twins and defects are proposed.2001 Elsevier Science B.V.All rights reserved.     

Conditions for the Observation of Two Ion-Acoustic Waves via Thomson Scattering

Observationof two ion-acoustic waves via Thomson scattering can provide precise measurements of plasma parameters. The conditions for the observation of two ion-acoustic modes in a two-ion plasma are discussed.The ratio of electron temperature Te to ion temperature Ti is the critical parameter for the presence of two ion-acoustic modes, which should be in the range of 4/ZL ≤ Te/Ti ≤ 2AH/ZHAL, where ZL,H are the charge states of light and heavy ions, and AL,H are the atomic numbers of light and heavy ions, respectively. As the temperature ratio varies in this range, the concentration of heavy ions must increase with the ratio Te/Ti so that the two ion-acoustic modes can have the same fluctuation levels.     

Multiple ionization of argon accompanied by electron loss and capture of 0.22-6.35 MeV C^q＋ ions

In this paper a projectile ions recoil ions coincidence technique is employed to investigate the target ionization and projectile charge state changing processes in the collision of 0.22-6.35 MeV Cq^＋ （q = 1 - 4） ions with argon atoms. The partial cross section ratios of the double, triple, quadruplicate ionization to the single ionization （or the single capture） of argon associated with single electron loss （or single electron capture） by the projectile are measured and compared with the previous experimental results. In the present experiment, it is observed that the ratios of ionization cross sections R associated with single loss and single capture depend strongly on the projectile charge state and vary significantly with different reaction channels as impact energy increases. In addition, this paper gets empirical scaling laws for the ionization cross section ratios R corresponding to the projectile single loss and finds that the ratios of the double ionization to the single ionization associated with single electron capture remain constant in the present energy range.     

A study on the real-time radiation dosimetry measurement system based on optically stimulated luminescence

The optically stimulated luminescent (OSL) radiation dosimeter technically surveys a wide dynamic measurement range and a high sensitivity. Optical fiber dosimeters provide capability for remote monitoring of the radiation in the locations which are difficult-to-access and hazardous. In addition, optical fiber dosimeters are immune to electrical and radio-frequency interference. In this paper, a novel remote optical fiber radiation dosimeter is described. The optical fiber dosimeter takes advantage of the charge trapping materials CaS:Ce, Sm that exhibit OSL. The measuring range of the dosimeter is from 0.1 to 100 Gy.     

Watt-level output rectangular-core neodymium-doped silicate glass fiber laser

We produce a maximum 1.45 W laser output at 1064 nm using a neodymium-doped silicate glass fiber that has a rectangular core with dimensions of ~6.3 μm× 31.5 μm. The measured divergence angles of the output laser in two dimensions are 3.22° and 1.76°, respectively. The output power is stable and limited only by the available pump power.     

Magnetic Properties and Spin State Transition of Gallium Doped Perovskite Cobaltite Oxide

A series of Ga doping perovskite cobaltite La2/3Sr1/3 （Co1-y Gay）03 （y = 0, 0.1, 0.2, 0.3 and 0.4） are prepared by the standard solid-state reaction method. Their magnetic properties and Co ions spin state transitions are studied. Upon doping, no appreciable structure changes can be found. However, the corresponding Curie temperature sharply decreases and the magnetization is greatly reduced, indicating that Ga doping destroys the ferromagnetic interaction in the system. In addition, the high temperature magnetization data follow the Curie-Weiss law. At least one kind of Co ions （Co^3＋ or Co^4＋） favours the mixed spin state, and most Co ions are at the lower spin state （low and intermediate state）. With increasing Ga content, more Co ions transit to the higher spin state.     

Indium doping effect on properties of ZnO nanoparticles synthesized by sol–gel method

Pure ZnO and indium-doped ZnO(In–ZO) nanoparticles with concentrations of In ranging from 0 to 5% are synthesized by a sol–gel processing technique. The structural and optical properties of ZnO and In–ZO nanoparticles are characterized by different techniques. The structural study confirms the presence of hexagonal wurtzite phase and indicates the incorporation of In~(3+) ions at the Zn~(2+) sites. However, the optical study shows a high absorption in the UV range and an important reflectance in the visible range. The optical band gap of In–ZnO sample varies between 3.16 e V and 3.22 e V. The photoluminescence(PL) analysis reveals that two emission peaks appear: one is located at 381 nm corresponding to the near-band-edge(NBE) and the other is observed in the green region. The aim of this work is to study the effect of indium doping on the structural, morphological, and optical properties of ZnO nanoparticles.     

A study on strain affecting electronic structures and optical properties of wurtzite Mg0.25 Zn0.75O by first-principles

We have made a first principles study to investigate density of states, band structure, the dielectric function and absorption spectra of wurtzite Mg 0.25 Zn 0.75 O. The calculation is carried out in a-axis and c-axis strain changing in the range from 0.3 to -0.2 in intervals of 0.1. The results calculated from density of states show that the bottom of conduction band is always dominated by Zn 4s and the top of valence band is always dominated by O 2p in a-axis and c-axis strain. Zn 4s will shift to higher energy range when a-axis strain changes in the range from 0.3 to 0, and then shift to lower energy range when a-axis strain changes in the range from 0 to -0.2. But Zn 4s will always shift to higher energy range when c-axis strain changes in the range from 0.3 to -0.2. The variations of band gap calculated from band structure and absorption spectra are also investigated, which are consistent with the results obtained from density of states. In addition, we analyse and discuss the imaginary part of the dielectric function ε 2 .     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Investigation of emission properties of Tm3＋：Y2O3 transparent ceramic

A transparent and emitting ceramic of Y 2 O 3 doped with 6% Tm 3+ ions is fabricated by vacuum sintering with ZrO 2 . Absorption, photoluminescence (PL), and PL excitation (PLE) spectra are investigated in a spectral range of 200 to 2 100 nm at various temperatures between 296 and 12 K. Intense emission band appears at 450 to 465 nm in the visible range. Near-infrared emission bands are observed at 1 200 to 1 300 nm and 1 400 to 1 550 nm, with intense peaks at 1 270, 1 450, and 1 523 nm. The luminescence mechanisms and potential applications of the emissions are discussed with the help of Judd-Ofelt theory and PLE spectra.     

Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

High-Quality Large-Sized Single Crystals of Pb-Doped Bi2Sr2CuO6＋δ High-To Superconductors Grown with Traveling Solvent Floating Zone Method

High quality Pb-doped Bi2Sr2Cu06＋δ （Pb-Bi2201） single crystals are grown by the traveling solvent floating zone technique, with dimensions as large as - 50 min× - 5.0 min ×- 2 mm. The Pb-Bi2201 single crystals with different doping levels are obtained by the annealing process which covers a wide doping range of the overdoped region. We describe in detail the growth and annealing procedures and the characterization and physical property measurements of the Pb-Bi2201 crystals. The availability of these crystals provides a good opportunity to experimentally investigate high-To cuprate superconductors, particularly in the overdoped region.     

Central black hole masses of galaxies

In this paper, the stellar velocity dispersions in the host galaxies are used to estimate the central black hole masses for a sample of elliptical galaxies. We find that the central black hole masses are in the range of 10^{(5.5-9.5)}M_⊙. Based on the estimated masses in this paper and those by Woo & Urry (2002) and the measured host galaxy absolute magnitude, a relation, log (M_{BH}/M_⊙) = -(0.25±4.3×10^{-3})M_R + (2.98±0.208) is found for central black hole mass and the host galaxy magnitude. Some discussions are presented.     

Planar waveguides in neodymium-doped calcium niobium gallium garnet crystals produced by proton implantation

In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet(Nd:CNGG) crystal are reported. The waveguide is produced by proton(H~+) implantation at 480 ke V and a fluence of 1.0×10~(17) ions/cm~2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8nm. The reflectivity calculation method(RCM) is used to reconstruct the refractive index profile. The finite-difference beam propagation method(FD-BPM) is employed to calculate the guided mode profile of the waveguide.The stopping and range of ions in matter 2010(SRIM 2010) code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.