^1^4C-加速器质谱法研究NNK与血红蛋白的体内加 合作用

用^1^4C-加速器质谱法(AMS)研究了香烟中尼古丁的亚硝基衍生物4-(甲基亚硝胺基)-1-(3-吡啶基)-1-丁酮(NNK)与小鼠体内血红蛋白(Hb)的加合作用,给出了加合剂量响应曲线。NNK剂量在0.01～0.1μg/kgb.w.范围内,加合水平基本上是一样的;而在0.1～3.0μg/kgb.w.范围内,加合物数量与NNK剂量之间呈1g/1g表示的线性关系。同时研究发现一次性给药的NNK-Hb加合物在小鼠体内的衰减表现为快、慢两个阶段,前3天内衰减很快,3天后衰减不明显。     

载能团簇离子诱发的非线性二次离子发射

载能团簇离子进入固体时， 由于集体相互作用，在入射路径上产生非常高的能量沉积密度。 实验发现， 载能团簇离子的作用结果并不等于团簇中各原子独立作用的总和， 而是具有非线性效应。 就二次离子发射而言， 这种非线性通常与团簇的能量、 团簇的大小、 离子的电荷态以及靶物质的结构有关。 通过研究二次离子发射有助于理解载能团簇离子与物质相互作用过程中的能量沉积与释放机制。 Using energetic cluster as projectile is a unique way to produce simultaneous impacts of several atoms and deposit extremely high energy density in a very small area. The cluster impingement on solids has exhibited some non linear effects not presented in collisions of individual atoms with those solids. The study of the secondary ion emissions can give insight into the energy deposition and relaxation steps of the cluster solid interaction. The dependence of the yields of secondary ion emission induced by clusters on the energy of clusters,cluster sizes,charge states and material structures of the targets was reviewed in this paper.     

Modal Characterization of a Planar Waveguide in Bismuth Borate Crystal

We report on the fabrication and modal property studies of planar waveguide structure in x-cut bismuth borate biaxial crystal formed by He ion implantation with triple energies. The prism coupling method is used to measure the effective refractive indices of this waveguide. We reconstruct the refractive index distribution of this waveguide by the reflectivity calculation method. Our results indicate that a broadened optical barrier is produced by the multiple He ion implantations. The so-called tunneling effect of the non-stationary mode in this type of barrier waveguide is presented by the well-known finite difference beam propagation method.     

加速器束流脉冲化及氢二次离子发射研究

详细介绍了快速高压晶体管开关在加速器束流脉冲化和用于二次离子测量的加速器飞行时间谱仪上的应用. 利用飞行时间法研究了碳纳米管在不同能量的Si和Si2团簇离子轰击下氢二次离子的发射. 实验结果表明， 在每个原子质量单位的速度为2.5×108 cm/s以上， Si和Si2离子引起的氢二次离子的发射主要受电子阻止过程控制； 在每个原子质量单位的速度为2.5×108 cm/s以下和Si2团簇离子轰击的情况下， 氢二次离子的发射产额明显增加， 团簇离子在靶表面的核能损增强效应起主要作用. The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight(TOF ) setup is described. Secondary ion emissions from carbon nanotubes under bombardments of MeV Si and Si2 clusters are measured by using TOF. The measurements indicate that the yield of the secondary ion emissions of hydrogen increases with increasing energy of Si and it is attributed to the electronic processes. The yield of the secondary ions of hydrogen decreases with increasing energy of Si2 clusters and the enhancement of nuclear energy loss of cluster constituents at the surface of sample plays a more significant role in the secondary ion emission of hydrogen at the low energies.     

Ion－Implanted Waveguides in a Nd^3＋－Doped Silicate Glass

Monomode enhanced-index Nd^3 -doped silicate glass waveguides fabricated by ion implantation are reported.The Nd^3 -doped silicate glass was implanted by 3.0 MeV B^ ions, 3.0 MeV 0^ ions and 4.5 MeV Ni^2 ions,respectively. A prism-coupling method was carried out to measure dark modes in the Nd^3 -doped silicate glassusing a model 2010 prism coupler. The moving fibre method was applied to measure the waveguide propagationloss. After a moderate annealing, the 3.0-MeV B^ -ion implanted waveguide loss is about 3.54 dB/cm; the 3.0-Me V O^ -ion implanted waveguide loss is about 5.36 dB/cm; and the 4.5-MeV the Ni^2 -implanted waveguide lossis about 7.55dB/cm. The results show that with the increasing ion mass, the loss in implanted waveguide isincreased.     

Comparison of Secondary Ion Emissions from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

The emission yields of H, H2, H3 and heavy ions from carbon nanotubes under bombardments of Si and Si2 clusters in an energy range of 0.3-3 MeV per atom are measured by using the time-of-flight technique (TOF). The emission yields of the secondary ions increase with increasing energy of Si and the electronic stopping processes play an important role. The enhanced emission yields of secondary ions induced by Si2 clusters at the low energies are clearly seen and attributed to the vicinage effect of the nuclear collision processes of cluster constituents and the secondary ion emissions are still dominated by electronic stopping processes at high energies.