4H-SiC同质外延的绿带发光与缺陷的关系

利用室温光致发光谱(PL)对CVD法生长的4H-SiC同质外延特性进行研究,发现有绿带发光(GL)特性.用扫描电子显微镜(SEM) 、二次离子质谱(SIMS)和X射线光电子谱(XPS)技术获得了4H-SiC样品纵截面形貌和元素相对含量分布.结果表明,GL与4H-SiC晶体中碳空位(V_C)及络合体缺陷相关,V_C和缓冲层的扩展缺陷(点缺陷和刃位错等)是GL微观来源.GL的半峰宽(FWHM) 反映了参与复合发光的V_C及其络合缺陷能级分散的程度.室温下获得的样品GL强度和光谱波长度可用于分析4H-SiC外延中缺陷分布和晶体质量. 关键词： 绿带发光 4H-SiC同质外延 晶体缺陷     

不同磁场环境下Heisenberg XXZ自旋链中的热量子失协

本文研究了不同磁场环境下一维Heisenberg XXZ自旋链中两量子比特的热量子失协特性. 在四种不同的磁场环境下: 1) B₁=B₂=0 (无磁场); 2) B₁≠0, B₂=0 (磁场只作用于其中一个量子比特); 3) B₁=B₂ (均匀磁场); 4) B₁=-B₂ (非均匀磁场), 对分别作用在每个量子比特上的磁场B₁和B₂对其量子关联的影响作了详细的讨论, 且数值计算和比较了其量子失协和量子纠缠的异同. 结果显示: 在有限温度下, 量子失协相比于量子纠缠更普遍, 且非均匀磁场相比于均匀磁场对量子失协和量子纠缠更有用, 更有利于量子通讯和量子信息处理过程. 关键词： 量子关联 纠缠 量子失协     

脉冲激光退火纳米碳化硅的光致发光

采用XeCl准分子脉冲激光退火技术制备了纳米晶态碳化硅薄膜(nc-SiC),并对薄膜的光致发光(PL)特性进行了分析。结果表明,纳米SiC薄膜的光致发光表现为300～600 nm范围内的较宽发光谱带,随退火激光能量密度的增加,nc-SiC薄膜398 nm附近的发光峰相对强度增加,而470 nm附近发光峰相对减小。根据nc-SiC薄膜的结构特性变化, 认为这两个发光峰分别来源于6H-SiC导带到价带间的复合发光和缺陷态发光,并且这两种发光过程存在竞争。     

薄膜电致发光器件中SiO2加速作用的直接证据

本文通过包含CdS层的薄膜电致发光(TFEL)器件的有关特性的研究,直接证明了SIO₂对CdS中产生的电子有良好的加速作用,并获得了阈值电压低、B-V特性好,亮度较高的红色TFEL器件.我们将硫化镉蒸镀于电致发光器件中,测量这些器件的电学和光学特性,发现含CdS的样品的传导电荷明显大于不含CdS的样品,这说明硫化镉层可以提供较多的电子.但是,样品ITO/SiO₂/ZnS:Sm³⁺/SiO₂/CdS/Al的发光效率低于不含硫化镐的样品,这说明这些电子在进入ZnS层的过程中能量有所降低.为了提高这些电子的能量,我们制备了样品ITO/SiO₂/ZnS:Sm³⁺/SiO₂/CdS/Al,使硫化镉中产生的电子先经过SiO₂层,再进入发光层.测量结果表明这一样品的最大亮度和发光效率与上述含硫化镉的样品相比分别提高了2.5个和0.5个数量级,与不含硫化镉的样品的亮度接近,但其阈值电压较低,亮度-电压(B-V)曲线上升部分较陡,且有一段饱和区.在这一样品达到饱和的电压下,不含硫化镉的样品才刚刚起亮,这说明该样品的发光主要是由于硫化镉增加的电子数目对发光的贡献.同时这些电子在SiO₂中得到了明显的加速.     

蓝色有机发光材料LiBq4的合成及其发光特性

蓝色有机发光材料的开发对于实现有机发光二极管(OLED)的全彩色化具有十分重要的意义.报道了蓝色有机发光材料8-羟基喹啉硼化锂(LiBq₄)的合成及提纯,研究了LiBq₄的光致发光特性,并用LiBq₄作为发光材料制备了蓝色有机发光器件,研究了电子传输层Alq₃的厚度及空穴缓冲层CuPc对器件电流-电压和亮度-电压特性的影响.结果表明,LiBq₄的光致发光峰值波长为452nm,器件ITO/PVK:TPD/LiBq₄/Alq₃/Al的电致发光光谱峰值波长位于475nm处,在25V工作电压下其最高亮度约为430cd/m².但CuPc的加入加剧了器件中载流子的不平衡注入,导致器件性能恶化.通过调整Alq₃的厚度,同时在Alq₃和Al阴极之间加入LiF薄膜以提高电子注入效率,获得了较为理想的实验结果.     

有机磷光材料的固态阴极射线发光研究

采用有机磷光材料三-(2-苯基吡啶)-铱(Ir(PPY)₃)与无机材料SiO₂复合制成夹层结构器件,用交流电压驱动获得了Ir(PPY)₃主峰位于517nm的发光和主峰位于435nm的蓝色发光.通过分析器件的光谱特性,发现这两个发光峰都是源于SiO₂中加速电子直接碰撞激发有机层引起的固态阴极射线发光.继实现多种有机聚合物材料和有机小分子材料八羟基喹啉铝(Alq₃)的固体阴极射线发光之后,又证实了有机 关键词： 夹层结构器件 有机磷光材料 固态阴极射线发光     

电子束辐照诱导Bi:α-BaB2O4 单晶近红外宽带发光的研究

用提拉法技术生长出了Bi:α-BaB₂O₄单晶,并进行电子束辐照.测定了电子束辐照前后的吸收谱和荧光发射谱.在808 nm波长激光二极管的激发下,电子束辐照后的Bi:α-BaB₂O₄单晶中观测到了中心波长在1135 nm附近、半高宽为52 nm左右的近红外宽带发光现象.近红外宽带发光的发光中心是Bi⁺离子.电子束射线起到了将Bi³⁺和Bi²⁺还原至一价态 关键词： 近红外宽带发光 2O₄单晶')" href="#">α-BaB₂O₄单晶 电子束辐照     

Tm3+-Yb3+共掺杂的碲酸盐玻璃和光纤的光谱特性

研究了Tm³⁺-Yb³⁺共掺杂的碲酸盐玻璃和光纤在980nm激光二极管激发下的可见与近红外光谱性质.室温下,Tm³⁺-Yb³⁺共掺杂的碲酸盐玻璃在480,800nm处观测到了很强的上转换发光,在650nm观测到一较弱的上转换发光,它们分别来自Tm³⁺离子的¹G₄^→3H₆,³H₄^{→ 3}H₆和¹G₄^{→ 3}F₄跃迁;在1020,1810nm处观测到近红外发射,它们分别属于Yb³⁺离子的²F_5/2^→2F_7/2跃迁和Tm³⁺离子的³F₄^→3H₆跃迁.研究了其发光特性与Tm³⁺及Yb³⁺的浓度的依赖关系.此外,在980nm激光激发下,还观测到Tm³⁺-Yb³⁺共掺杂的碲酸盐玻璃光纤在1060,1470,1910nm附近的近红外发射.详细讨论了其发光机制,该材料可望用于制作蓝色上转换光纤激光器、S-波段光纤放大器以及在医疗诊断和遥感中有着广泛的应用的1.9μm光纤激光器.     

铥、铽及铕离子掺杂的BaAl2O4膜的阴极射线发光特性

利用喷雾热解法合成了Tm、Tb及Eu离子掺杂的铝酸钡(BaAl₂O₄)发光膜,研究了合成条件对其结构和发光特性的影响.在退火温度达到700℃时,生成了BaAl₂O₄膜.Tm³⁺和Tb³⁺掺杂的BaAl₂O₄膜分别发蓝光和绿光,而Eu³⁺掺杂的BaAl₂O₄膜的发光既有Eu²⁺的特征发射——宽的蓝光发射带,也有Eu³⁺的特征发射——窄的红光发射峰.BaAl₂O₄:Tm³⁺的发射主峰位于462nm,在电压为5kV和电流密度为57μA/cm²的条件下,其阴极射线发光(CL)亮度可达25cd/m²,效率可达0.11lm/W.BaAl₂O₄:Tb³⁺的发射主峰位于549nm,在相同的条件下,其阴极射线发光亮度可达120cd/m²,效率可达0.55lm/W.BaAl₂O₄:Eu³⁺的发射主峰位于616nm,其阴极射线发光亮度为50cd/m²,效率为0.23lm/W.BaAl₂O₄:Eu²⁺发蓝光,峰值位于452nm,其阴极射线发光亮度为640cd/m²,效率为2.93lm/W.     

Ti,N共掺杂4H-SiC复合增强缓冲层生长及其对PiN二极管正向性能稳定性的改善

"双极型退化"现象严重阻碍了4H-SiC双极型器件如PiN二极管等的产品化,其微观机理是电子-空穴复合条件下层错由基面位错处的扩展.为遏制"双极型退化"现象,不仅要消除漂移层中的基面位错,还需要通过生长复合增强缓冲层的方法阻止少子空穴到达含高密度基面位错片段的外延层/衬底界面.本文采用钛、氮共掺杂的方式进行缓冲层的生长,通过钛掺杂进一步降低缓冲层中的少子寿命.首先确定了钛掺杂浓度和钛源摩尔流量之间的定量关系,在此基础上制备了含钛、氮共掺杂缓冲层结构的4H-SiC PiN二极管,并在正向电流密度100 A/cm^2的条件下保持10 min,测量其正向压降随时间的变化.与无缓冲层结构、仅含高浓度氮掺杂缓冲层结构的4H-SiC PiN二极管相比,含钛、氮共掺杂缓冲层的二极管的正向压降稳定性得到了明显改善.     

SiC/AlN上外延GaN薄膜的黄带发光与晶体缺陷的关系

利用室温光致发光(PL)技术研究了在6HSiC(0001)上用金属有机物化学汽相沉积(MOCVD)外延生长的GaN薄膜“黄带”发光(YL)特点,与扫描电子显微镜(SEM)、X射线衍射(XRD)技术得到的GaN薄膜的表面形貌质量和内部结晶质量的结果相对照,表明“YL”发光强度与GaN薄膜的扩展缺陷多少直接相对应通过二次离子质谱(SIMS)技术获取的GaN薄膜中Ga元素深度分布揭示出镓空位(V_Ga)最可能是“YL”发光的微观来源分析认为,虽然宏观扩展缺陷(丝状缺陷、螺形位错等)和微观点缺陷V_Ga及其与杂质的络合物(complexes)都表现出与“YL”发射密切相关,但V_Ga及其与杂质的络合物更可能是“YL”发射的根本微观来源室温下获得的样品“YL”发射强度和光谱精细结构可用于分析GaN薄膜缺陷和晶体质量.     

Investigation of dislocations in 8circ off-axis 4H-SiC epilayer

This paper reports that the etching morphology of dislocations in 8^circ off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer.     

Interface dislocation structures at the onset of coherency loss in nanoscale Ni–Cu bilayer films

We have performed a transmission electron microscopy study, using weak beam imaging, of the interface dislocation arrays that form initially at the (001) Ni–Cu interface during coherency loss. Interface dislocations were absent in the 2.5?nm Ni/100?nm Cu bilayers, but were present in the 3.0?nm Ni samples, indicating that the critical Ni film thickness for coherency loss is between 2.5 and 3?nm. The key features of the interface dislocation structure at the onset of coherency loss are: (i) the majority of interface dislocations are 60° dislocations, presumably formed by glide of threading dislocations in the coherently stressed Ni layer, and have Burgers vector in the {111} glide plane; (ii) the interface contained approximately 5% Lomer edge dislocations, with Burgers vector in the {001} interface plane, and an occasional Shockley partial dislocation and (iii) isolated segments of interface dislocations terminating at the surface are regularly observed. Possible mechanisms that lead to these dislocation configurations at the interface are discussed. This experimental study shows that near the critical thickness, accumulation of interface dislocations occurs in a somewhat stochastic fashion with favourable regions where coherency is first lost.     

Dependence of the properties of the dual luminescence of 3-hydroxyflavone on the excitation wavelength

The luminescence and luminescence excitation spectra of 3-hydroxyflavone in acetonitrile obtained at different excitation/recording wavelengths are studied. The dependences of the position of the normal luminescence band maximum and of the intensity ratio of the normal and proton-transfer bands, on the excitation wavelength are found and studied for the first time. It is found that the spectral contour of dual luminescence also depends on the excitation wavelength and the blue emission band is cut off at a sufficiently long-wavelength excitation in the region of 390 nm. In the luminescence excitation spectrum, an additional wide band is observed in the proton-transfer region at 200–260 nm. Excitation in the region of 380–440 nm allowed us to reveal a wide structureless band near 470 nm (with the maximum of its excitation near 420 nm) belonging to the anionic form of 3-hydroxyflavone. Addition of water at a concentration of ～2.2 M quenches this band almost completely.     

Luminescence spectra of doped and undoped lead tungstate crystals

TL spectra of undoped lead tungstate crystals exhibit glow peaks at 30 v K and 85 v K centred at 440 v nm, plus a peak at 50 v K at 530 v nm in an annealed sample. Annealing adds a 170 v K peak. Trivalent dopants of La 3+ and Y 3+ reduce the green luminescence, and Nb 5+ introduces a peak near 100 v K centred at 530 v nm; Sb introduces features between 40 v K and 90 v K and 150 and 180 v K. The luminescence emissions around 50 v K may be attributed to complex intrinsic defect centres, including (WO 4 ) m 3 . Of the four dopants studied in the present research, Sb +5 has the highest luminescence intensity. CL spectra show interesting anomalies near 170 v K which are linked to a phase change of water/ice nanoparticles trapped at dislocations.     

Modeling of motion of dislocation train through dislocation forest

Modeling methods were used to analyze tie motions of a train of dislocations through a dislocation forest. Differences were found in this motion in the basal plane of hep crystals and in the {11} plane in crystals of the NaCl type. It was established that the process of formation of dislocation loops when dislocations pass through a dislocation forest may be responsible for considerable strain hardening.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 97–103, December, 1979.     

氟氧化物氟化物五磷酸盐玻璃中Er3+的直接上转换增敏发光的比较

本文研究了ErYb共掺的氟氧化物玻璃 (ErYb:FOG)、氟化物ZBLAN玻璃和五磷酸盐非晶在 966nm半导体激光激发下的直接上转换敏化发光现象。发现有丰富的上转换发光现象 ,这是由于样品中Yb3 的浓度很高 ,Er3 Yb3 ,Yb3 Yb3 离子之间的相互作用和能量传递作用都很强造成的。研究发现ErYb :FOG玻璃的直接上转换增敏发光比磷酸盐大 1 0 0～ 1 0 0 0 0 0倍 ;而很有趣的结果在于氟氧化物玻璃的直接上转换增敏发光与ZBLAN玻璃接近 ;这对于提高频率上转换的综合性能是很有意义的。     

碲化物发光玻璃中银纳米颗粒表面等离激元增强铒离子发光的研究

有趣的贵金属表面等离激元的光学性质,尤其是在发光增强领域的表现,使得它已经成为全球的一个研究热点。表面等离激元就是光与贵金属中的自由电子相互作用时,自由电子和光波电磁场由于共振频率相同而形成的一种集体振荡态。该文研究了碲化物玻璃中银纳米颗粒的表面等离激元共振增强铒离子的发光。我们测量了吸收谱、激发谱、发光谱以及荧光寿命。首先,我们挑选365.5和379.0 nm吸收峰作为激发波长测量了385～780 nm波长范围的可见发光光谱,发现有4个发光峰,依次位于408.0,525.0,546.0和658.5 nm,容易指认出它们依次为铒离子的2H_9/2→4I_15/2,2H_11/2→4I_15/2,4S_3/2→4I_15/2和4F_9/2→4I_15/2的荧光跃迁;可以计算出[80 nm平均粒径纳米银的Er3+(0.5%)Ag(0.2%): 碲化物玻璃的样品A]的上述4个可见发光的峰值强度是[Er3+(0.5%): 碲化物玻璃的样品C]的大约1.44～2.52倍。同时,[50 nm平均粒径纳米银的Er3+(0.5%)Ag(0.2%): 碲化物玻璃的样品B]的上述4个可见发光的峰值强度是样品C的大约1.08～1.55倍。随后,我们挑选365.5和379.0 nm 吸收峰作为激发波长测量了928～1 680 nm波长范围的近红外发光光谱,发现近红外波段有两个发光峰,位于979.0和1 530.0 nm,容易指认出它们依次为铒离子的4I_11/2→4I_15/2和4I_13/2→4I_15/2的荧光跃迁;同样可以计算出样品A的上述2个近红外发光的峰值强度是样品C的大约1.43～2.14倍。同时,样品B的上述2个近红外发光的峰值强度是样品C的大约1.28～1.82倍。因此,发光的最大增强大约是2.52倍。从荧光寿命动力学实验,我们发现样品A的荧光寿命为τ_A(550)=43.5 μs,样品B的荧光寿命为τ_B(550)=43.2 μs,样品C的荧光寿命为τ_C(550)=48.6 μs。这些实验结果证实了τ_A≈τ_B ＜τ_C。它意味着样品(B)相对于样品(C)的发光增强是源于自发辐射增强效应。然而,它也意味着样品(A)相对于样品(B)的发光增强是源于纳米银颗粒的粒径尺寸r效应。也就是说当粒径尺寸r增大的时候,散射截面C_s和r6成正比,而吸收截面C_a和r3成正比,因此散射截面C_s增大的速度会远大于吸收截面C_a增大的速度,而散射截面C_s是荧光增强的原因,吸收截面C_a是荧光减弱的原因,所以随着银纳米颗粒尺寸的增大,其散射截面占主要部分,当发光材料和金属表面等离子体SP发生耦合时,能量快速的转移到金属表面等离子体SP上,而后被散射到远场,这有利于增强荧光。其综合的结果就导致了发光强度会随r的增大而增强。上述实验的结果对太阳能电池的光伏发电和生物物理应用等领域都有着很好的应用前景。     

Growth of epitaxial c ‐plane ZnO film on a ‐plane sapphire by radio frequency reactive magnetron sputtering

In this Letter, we report the successful growth of high quality c ‐plane oriented epitaxial ZnO films on a ‐plane sapphire substrates by using radio frequency reactive magnetron sputtering. The effect of substrate temperature on the structural and optical properties has been investigated. X‐ray diffraction (XRD) studies reveal that the ZnO film is grown epitaxially on a ‐plane sapphire substrate, and the film quality is improv‐ ed as the substrate temperature is increased. Photoluminescence (PL) results manifest that screw dislocations can exert great influence on the optical properties. It is found that the line width of the near‐band‐edge emission of PL decreases linearly with increase in screw density. In addition, a simple and effective method is proposed to assess the defect density in epitaxial ZnO films by performing PL measurement. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of energy transfer on the kinetics of the decay and anisotropy of luminescence of prodan molecules

The temporal characteristics of the decay and polarization of luminescence of prodan solutions with different concentrations, excited by a picosecond laser radiation, are studied. The kinetics of the emission decay and polarization depend on the spectral range of luminescence recording and on the luminophore concentration and reflect the relaxation processes (leading to a long-wavelength shift of the entire emission band) and, in the case of sufficiently high concentrations, nonradiative energy transfer between the prodan molecules. It was found that the evolution of luminescence anisotropy in a diluted solution depends on the recording wavelength, which allowed us to calculate the average times of the Brownian rotational diffusion for prodan in glycerol, whose maxima were determined to be about 40 ns in the spectral region near 520 nm and to decrease to 14 and 17 ns at the edges of the emission region at 450 and 560 nm, respectively.