YBCO涂层导体用Ni5W基带的制备和立方织构的发展

为了制作能满足YBCO涂层导体(coated conductor)所需要的高强度、低磁性的立方织构基带,本工作用粉末冶金方法制作了Ni-5at%W合金基带.为评估基带中立方织构的发展,用March-Dollase函数对各种热处理样品的择优取向度进行了研究,结果与用X射线极图法和电子背散射衍射法得到的结果基本一致.研究结果表明,在实验中所用的工艺参数范围内,随总加工率和热处理温度的提高,基带中立方织构百分数明显增高.提高总加工率实际增加了冷加工样品中立方织构晶粒或立方核心的数量.实验中得到了较好的和实用的工艺制度,用这种工艺可以制作出具有99%～100%立方织构百分数,并具有很好一致取向度的Ni5W基带.     

用于YBCO高温超导涂层的立方织构铜基带制备

Cu是制备双轴织构YBCO高温超导涂层的优良基带材料之一,立方织构的铜带可以提供良好的外延生长环境。文中采用轧制辅助双轴织构基带技术(RABiTS),研究了立方织构铜基带的制备工艺。将铜锭在初轧变形量达到88.4%后,进行400℃退火30min,再经二次轧制总变形量达到99.07%后,在氩气环境125—850℃之间不同温度下退火30min。用March-Dollase函数计算该系列样品的r值,其中850℃退火的样品具有最强的200择优取向,r值为0.25,用不完整极图对该样品的织构情况做进一步分析,用ODF函数定量计算了该样品立方织构的体积百分含量。该样品形成了较强的{001}<100>立方织构,体积百分含量为70.8%。     

高温超导Ni—W基带的织构研究

涂层超导是目前国际超导界的研究热点和重点，所采用的韧性金属基带多为Ni和NiW合金．本文采用粉末冶金方法制备了Ni-3 at．％W和Ni-5 at．％W合金．利用轧制辅助双轴织构基带（咖TS）技术制备了Ni-W合金基带，系统研究了Ni-W合金形变和再结晶织构转变规律．研究表明：通过大变形量的冷轧和高温再结晶退火，可以得到强立方织构的Ni-W合金基带．     

Ni基带上的氧化物过渡层制备

本文采用溅射沉积方法在双轴织构的Ni—W5％基带上制备了CeO2和Y2O3薄膜．研究表明CeO2薄膜在Ni基带上的外延方式受生长速率、生长温度的控制．在快速沉积情况下，CeO2薄膜为（111）取向，在沉积速率较低时，以（001）取向为主．CeO2薄膜沉积过程中，可以有效避免Ni的氧化．在Y2O3的沉积过程中，Ni基带的氧化不可避免，但其氧化物也有良好的取向．     

在织构Ni衬底上用电子束蒸发沉积YSZ阻挡层

用轧制及再结晶方法制备了高度立方织构的金属Ni(镍）基带。采用电子束蒸发的方法在几个厘米长的Ni基带表面上生长YSZ（钇稳定二氧化锆）阻挡层。X射线衍射分析表明，YSZ层具有纯c轴取向和良好的平面内取向及立方织要。扫描电镜观察表明，YSZ阻挡层连续致密无裂纹。     

铁硅合金中立方织构的形成

铁硅合金(含硅3.25％)的样品,经过不同的冷轧和中间退火程序,在最后高温退火时,可以通过二次再结晶,或者一次再结晶形成集中的立方织构。通过二次再结晶形成立方织构时,并不包括重新形核的过程。(100)[001]取向的二次再结晶“晶核”,在一次再结晶完成后,就已经存在。通过一次再结晶形成的立方织构,由于样品在冷轧后,得到了较强的加工立方织构,退火时通过同位再结晶,就得到了再结晶立方织构。     

在RABiTS基带上制备Tl-2212超导薄膜

我们研究了Tl-2212超导薄膜在带有YSZ／CeO2缓冲层和带有CeO2／YSZ／CeO2缓冲层的Ni金属RABiTS基带上的生长情况．基带上的缓冲层是采用PLD方法制备的，Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法．XRD实验结果表明，Tl-2212薄膜都具有很好的c轴垂直于膜面的织构，并具有双向外延生长特性．在CeO2／YSZ／CeO2／Ni基带上制作的Tl-2212薄膜的Tc达到102．8K，Jc（77K，0T）达到2．6MA／cm^2；在YSZ／CeO2／Ni基带上薄膜的Tc可达97．7K，Jc（77K，0T）也可以达到0．45MA／cm^2．     

T1系超导薄膜金属涂层的生长与特性研究

我们研究了T1-2212超导薄膜在带有YSZ／CeO2缓冲层和带有Ce02／YSZ／CeO2缓冲层的Ni金属RABiTS基带上的生长情况．基带上的缓冲层是采用PLD方法制备的，T1-2212薄膜的制备采用了磁控溅射和后热处理两步方法．XRD实验结果表明。T1-2212薄膜都具有很好的C轴垂直于膜面的织构，并具有双向外延生长特性．在CeO2／YSZ／CeO2／Ni基带上制作的T1-2212薄膜的Tc达到102．8K，J,（77K,0T）达到2.6MA／cm^2；在YSZ／CeO2／Ni基带上薄膜Tc可达97．7K，Jc（77K,0T）也可以达到0．45MA／cm^2.     

在Ag基带上用PLD法沉积YBCO超导薄膜的研究

Ag是目前唯一不需要隔离层的高温超导基带材料，而且研究表明，在YBCO中掺入适量的Ag，将有利于超导性能的改善和表面电阻的降低．本研究采用准分子激光法（PLD），在经不同表面处理的{110}〈110〉取向的双轴织构银基带上直接沉积了YBCO薄膜，得到了强双轴织构的超导膜，系统地研究了银基带中的孪晶、晶界等缺陷对YBCO超导微观组织的影响．     

YBCO晶须制备新工艺与生长机理

本文首先提出了由ＹＢＣＯ的熔融织构样品经高温热处理制取ＹＢＣＯ晶须的新工艺，采用ＳＥ几ＳＡＤ等手段研究了热处理温度制度及不同母体对ＹＢＣＯ晶须生长的影响，确定了制备ＹＢＣＯ晶须的工艺参数，所得ＹＢＣＯ晶须的长度可达２．５ｍｍ，晶须宽度在２０－５０μｍ之间，探讨了由ＹＢＣＯ熔融织构样品制取其晶须的生长机理。     

Texturing in a Ni–W/TiN Thin-Film System

Double-layer thin-film compositions with a TiN coating based on a ferromagnetic Ni–5 at % W alloy and a paramagnetic Ni–9.5 at % W alloy have been prepared. Texturing in both components of the Ni–W/TiN system has been studied using X-ray diffraction analysis. It has been found that the coating layer causes crystal planes in the Ni–9.5 at % W strip to reorient and thereby enhances the cube texture in the substrate. It has been shown that under certain growth conditions, a thin TiN coating above the Ni–9.5 at % W/TiN substrate grows quasi-single-crystalline with a cube texture.     

Enhancement of cube texture in Ni by the addition of W or Mo

The development of cube texture after heavy cold rolling (～95%) and annealing has been studied in pure Ni, Ni–5 at% W and Ni–5 at% Mo alloys. The two Ni alloys develop a much sharper cube texture compared to pure Ni, thus indicating the beneficial effect of W or Mo addition. W and Mo enhance the cube texture intensity in Ni by decreasing the volume fraction of the rotated cube grains. The impact of W and Mo addition is seen from a very early stage of recrystallization, where rotated cube grains form in pure Ni as opposed to sharp cube-oriented grains in the two Ni alloys. The results negate the widely perceived theory of ‘detrimental effect of impurities’ on the development of cube texture.     

Development of cube textured Ni–5 at.%W alloy substrates for coated conductor application using a melting process

Biaxially textured Ni–5 at.%W substrates have been prepared by cold rolling, followed by three different annealing routes. In this paper, the processes of melting Ni and W metals, flat rolling, various annealing methods are described in detail. The Ni–5 at.%W tapes annealed under either high vacuum or flowing Ar (7% H₂) gas were characterized by X-ray pole figures, ODF, EBSD as well as AFM analysis. The texture analysis indicated that as fabricated tapes have a sharp cube texture formed after annealing at a wide temperature range of 800–1100 °C. The high quality of cube orientation on tapes was obtained after a two-step annealing (TSA), where the percentage of the cube texture component was as high as 93.5% within a misorientation angle smaller than 8° from EBSD analysis. Furthermore, it was also observed that the number of twin boundaries in this tape decreased with respect to that of tapes annealed both in vacuum and one-step gas annealing. From AFM on 1 μm² areas, it was concluded that the roughness (RMS) on the tape surface reached 0.98 nm.     

Investigation of Physical and electrochemical properties of Ni doped CeO2 Thin films: DFT calculation

Undoped and Ni-doped thin films of cerium dioxide have been deposited by spray pyrolysis technique on the glass substrate at the optimized temperature (450 ± 5) °C. Thin films Ce_1-xNi_xO₂ doped by different concentrations of Ni was characterized by X-ray diffraction. Raman analysis showed a peak at 461 ± 1 cm⁻¹ position for the undoped film, which corresponds to the active mode (F_2g mode) of the cubic fluorite structure. SEM images showed that the particles have a uniform spherical shape. EDS data have confirmed all elements (Ce, Ni and O) existence. Optical properties of samples show a decrease in band gap energy with increasing the nickel rate. Cyclic voltammetry indicates that the storage capacity of samples increases as the Ni rate increases. The EIS of CeO₂/ITO electrodes displays a small semicircular at high frequency. The theoretical results obtained using WIEN2k match well with the experimental ones.     

Yield strengths and stress induced crackles in copper films：effects of substrate and passivated layer

Yield strengths in unpassivated and 530 nm TiN passivated Cu films deposited on Ti, high-speed steel and Ni substrates have been measured by x-ray diffraction (XRD) in combination with the four-point bending method. The results show that, although the texture and average grain size, investigated by XRD and transmission electron microscopy respectively, do not vary with different substrate, the yield strength of the Cu film increases obviously when a thin passivated layer is present and varies slightly with substrates. Many crackles appear in the passivated Cu film on Ti substrate but do not appear in other samples. The experimental results have been explained satisfactorily with an expression for the yield strength of thin films given previously.     

衬底材料对制备立方氮化硼薄膜的影响

较系统地研究了不同衬底材料对制备氮化硼薄膜的影响。用热丝增强射频等离子体CVD法,以NH3,B2H6和H2为反应气体,在Si,Ni,Co和不锈钢等衬底材料上,成功生长出高质量的立方氮化硼薄膜,还用13.56MHz的射频溅射系统将c-BN薄膜沉积在Si衬底上,靶材为h-BN(纯度为99.99％）,溅射气体为氩气和氮气的混合气体,所得到的氮化硼薄膜中立方相含量高于90%,用X射线衍射谱和傅里叶变换红谱对样品进行了分析表明,衬底材料与c-BN的晶格匹配情况,对于CVD生长立方氮化硼薄膜影响很大,而对溅射生长立方氮化硼薄膜影响不大。     

嵌埋Ni颗粒的BaTiO_3/SrTiO_3薄膜的相变特性

采用高温X射线原位衍射和变温介电谱对SrTiO3基底上外延生长的BaTiO3(嵌埋Ni颗粒)薄膜进行了相变特性分析。从X射线衍射和介电谱的分析结果得出,BaTiO3的相变温度点转变为弥散的温度区间。在这个弥散的相变温度区间内,由于基底和薄膜之间的失配,以及嵌埋Ni颗粒的应力作用,薄膜的介电响应弥散剧烈,并偏离德拜弛豫。分析Cole-Cole图获知,BaTiO3薄膜在四方相转变为立方相的相变过程中同时存在几种极化机制,在高温状态下介电损耗随温度增大而增大。降温过程中,薄膜没有立即恢复四方相,可能是基底和Ni颗粒的共同作用影响了相变弛豫。     

Effect of initial texture on texture evolution in cold-rolled AA 5182 aluminium alloy

AA 5182 aluminium alloy with a strong cube texture was cold rolled to different reductions along the following directions: firstly, the original rolling direction; secondly, at angles of 22.5 and 45° to the original rolling direction. The evolution of texture in the cold-rolled samples with different initial textures was then investigated by X-ray diffraction. The texture evolution was quantified by mathematical formulae of texture volume fractions and rolling true strain. The results show that initial texture has a strong influence on the evolution of rolling texture. AA 5182 aluminium alloy with an initial rotated-cube (r-cube) (45° normal direction r-cube) texture exhibits the fastest rate of formation of the β fibre. The rate of formation of the β fibre decreases as the initial texture changes from the r-cube texture to the cube texture. The relationship between the rate of formation of the β fibre (k _β value in the mathematical formula for the volume fraction of the β fibre) and the initial texture (M _cube and M _r-cube: the volume fractions of the cube and r-cube components respectively) can be expressed as k _β ?=?0.37???0.03(M _cube /5.41???M _r???cube /5.64).     

DC与CC 5052铝合金冷轧后沿厚度方向织构分布状态对比的X射线衍射分析

采用X射线衍射测试极图、使用专用软件计算织构取向分布函数(ODF), 研究了热轧后454℃×4h再结晶退火的直接铸造5052铝合金板(DC 5052)和双履带连续冷却铸造5052铝合金板(CC 5052)冷轧制到不同压下量的试样,自表层至心部层的冷轧织构分布差别,为工业上生产及应用DC 5052与CC 5052铝合金冷轧板提供依据。结果显示：同样的大压下量时CC 5052的β织构强度及体积分数高于DC 5052的。冷轧前CC 5052的再结晶织构Cube的体积分数小于DC 5052的,剩余位向的体积分数多于DC 5052的,导致CC 5052表层的β织构强度及体积分数达到与1/4层、中心层接近所需要的冷轧压下量比DC 5052试样需要的小。CC 5052冷轧板冲压加工方面的性能优于DC 5052冷轧板。