Pb1－xMnxSe薄膜的光学特性

采用分子束外延的方法在BaF₂(111)衬底上制备出了高质量的Pb_1-xMn_xSe(0≤x≤0.0681)薄膜.X射线衍射结果表明，Pb₁-xMn_xSe薄膜为立方相NaCl型结构，没有观察到MnSe相分离现象，薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小，Mn含量由Vegard公式得到.通 关键词： 1-xMn_xSe外延薄膜')" href="#">Pb_1-xMn_xSe外延薄膜 透射光谱 带隙 折射率     

PbTe/CdTe量子点的光学增益

PbTe/CdTe量子点是一类新型异系低维结构材料，实验发现具有强的室温中红外光致发光现象.为研究这一材料体系的发光特性，建立了理论模型，计算了PbTe/CdTe量子点的光学跃迁和增益.模型基于k·p包络波函数方法并考虑了PbTe能带结构的各向异性.分析了量子点光学增益与量子点尺寸、注入载流子浓度的关系.结果表明，当注入载流子浓度在(0.3—3)×10¹⁸cm^-3范围时，尺寸为15—20nm的量子点可以产生 关键词： PbTe/CdTe量子点 光学增益 铅盐矿半导体     

MBE生长PbSe/PbSrSe量子阱结构的光致中红外发光的研究

研究了分子束外延技术生长的PbSe/PbSrSe多量子阱结构的中红外光致荧光现象.高分辨率X射线衍射（HRXRD）谱观察到了多量子阱所特有的多级卫星峰，表明量子阱界面陡峭.变温光致荧光谱测量显示量子阱结构对电子空穴有强的限制效应，在相同温度下，量子阱样品的荧光峰峰位相对PbSe体材料有一定的蓝移.发现量子阱样品的荧光强度同温度有关，温度从150 K上升到230 K时，荧光强度逐渐增大，温度继续升高，荧光强度缓慢下降，但在高于室温时，仍能观察到较强的荧光发射，这说明该量子阱结构材料具有应用于室温工作的中红外 关键词： PbSe/PbSrSe多层量子阱（MQWs） 光致中红外荧光 高分辨X射线衍射（HRXRD）     

Microstructural Properties of Single Crystalline PbTe Thin Films Grown on BaF2（111） by Molecular Beam Epitaxy

Single crystal PbTe thin films have been grown on BaF2 （111） by using solid source molecular beam epitaxy. The studies of evolution of the surface morphology with the increasing growth temperature from 375 to 525℃ by AFM show that PbTe epilayers exhibit smooth surface morphologies with atomic layer scale roughness and are crack free. It is found that for PbTe grown at 475℃, the morphology is dominated by triangles and the rms roughness is 3.987nm. Compared to the rms roughnesses of 0.432nm and 0.759nm for the samples grown at 375 and 525℃ respectively, the surface of the PbTe layer grown at 475℃ is much rougher. This roughening transition is due to the interaction between the elastic relaxation and the plastic relaxation during the strain relaxation process. In contrast to the result of the morphology that the PbTe epitaxial layer grown at 375℃ has most smooth surface, as observed from the line width of x-ray diffraction curves at higher growth temperature improves the crystal quality of the single-crystalline Pb Te layer.     

Mn/PbTe(111)界面行为的光电子能谱研究

利用X光电子能谱(XPS)对Mn在PbTe(111)表面上沉积生长的界面性质进行了研究.研究表明Mn的沉积使衬底发生了原子尺度上的突变及金属/半导体界面的形成.从X光电子能谱的芯态能级峰来看，随着Mn膜的沉积Pb 4f峰的低结合能端出现了金属Pb的特征新峰,而Te 3d峰的高结合能端却出现了MnTe特征新峰.且随着Mn膜厚度的增加这些新峰变得越来越明显，当Mn膜厚度超过7 ML(monolayer)(即超过Pb,Te的探测深度)时，衬底信号峰完全消失，只剩下金属Pb和MnTe的芯态能级峰.Mn膜厚度继续增 关键词： PbTe半导体 界面形成 光电子能谱 偏析     

Band Gap Energies and Refractive Indices of Epitaxial Pb1-xSrxTe Thin Films

Pb1-x Srx Te thin films with different strontium （St） compositions axe grown on BaF2 （111） substrates by molecular beam epitaxy （MBE）. Using high resolution x-ray diffraction （HPLXRD）, we obtain Pb1-xSrxTe lattice constants, which vary in the range 6.462-6.492 A. According to the Vegard law and HRXRD data, Sr compositions in Pb1-xSrxTe thin films range from 0.0-8.0%. The Pb1-xSrxTe refractive index dispersions are attained from infrared transmission spectrum characterized by Fourier transform infrared （FTIR） transmission spectroscopy. It is found that refractive index decreases while Sr content increases in Pb1-xSrx Te. We also simulate the Pb1-xSrxTe transmission spectra theoretically to obtain the optical band gap energies which range between 0.320 e V and 0.449 e V. The simulated results are in good agreement with the FTIR data. Finally, we determine the relation between Pb1-xSrx Te band gap energies and Sr compositions （Eg = 0.320＋0.510x-0.930x^2 ＋184x^3 （eV））.     

薄包层长周期光纤光栅薄膜传感器特性研究

基于薄膜参量变化引起的长周期光纤光栅模式重组机制,系统研究了光纤包层半径变化对长周期光纤光栅薄膜传感器特性的影响.结果表明,在相同薄膜参量下包层半径的减小可有效提高传感器的灵敏度,并增大传感器对薄膜参量变化响应的动态范围,但减小包层半径对传感器的增敏效应随薄膜厚度的增大而减小.通过氢氟酸腐蚀减小包层半径,采用静电自组装法在包层表面镀制PAH/PAA薄膜,镀膜过程中光纤光栅输出的光谱数据证实了理论分析结果.实验结果表明:半径为39μm、膜厚为424nm的长周期光纤光栅薄膜传感器在溶液pH值检测中的灵敏度达3.93nm/pHU,比标准包层时的灵敏度提高了1倍.     

Energy band alignment of PbTe/CdTe(111) interface determined by ultraviolet photoelectron spectra using synchrotron radiation

The energy band structure with type-I alignment at the PbTe/CdTe(111) heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation.The valence band and conduction band offsets are obtained to be 0.09±0.12 and 1.19±0.12 eV,respectively.These results are in agreement with theoretically predicted ones.The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.     

分子束外延PbTe单晶薄膜的反常拉曼光谱研究

采用分子束外延(MBE)方法在BaF₂(111)衬底上生长了高质量的PbTe单晶薄膜， 拉曼光谱测量观察到了表面氧化物的振动模、布里渊区中心(q≈0)纵光学(LO)声子振动模以 及声子-等离子激元耦合模振动.随着显微拉曼光谱仪激光光斑聚焦深度的改变，各拉曼散射 峰的峰位、积分强度、半高宽等都表现出不同的变化趋势. 随着激光光斑聚焦位置从样品表 面上方3μm处变化到表面下方3μm处，PbTe外延薄膜的LO声子频率从119cm^-1移 动到124cm^{-1关键词： PbTe外延薄膜 拉曼散射 纵光学声子}     

Highly sensitive giant magnetoimpedance in a solenoid containing FeCo-based ribbon

The highly sensitive giant magneto-impedance effect in a solenoid containing a magnetic core of Fe₃₆Co₃₆Nb₄Si_4.8B_19.2 (FeCo-based) ribbon under a weak magnetic field (WMF) is presented in this paper. The FeCo-based amorphous ribbon is prepared by single roller quenching and annealed with Joule heat in a flowing nitrogen atmosphere. The giant magnetoimpedance effect in solenoid (GMIES) profiles are measured with an HP4294A impedance analyzer. The result shows that the GMIES responds to the WMF sensitively (as high as 1580 %/A穖^-1). The high sensitivity can be obtained in a moderate narrow range of annealing current density (30-34 A/mm²) and closely depends on the driven current frequency. The highest sensitivity (1580 %/A穖^-1) is obtained when the FeCo-based amorphous ribbon is annealed at 32 A/mm² for 10 min and then driven with an alterning current (AC) at the frequency of 350 kHz. The highly sensitive GMIES under the WMF may result from the multiple magnetic-anisotropic structure, which is induced by the temperature gradient produced during Joule-heating the ribbon.