Bi-Sr-Ca-Cu-O体系中的单斜相与掺Ba效应的研究

采用固相反应法合成名义组份为Bi₂Sr₂Ca_1-xBa_xCu₂O_y(A),Bi_1.7Pb_0.3Sr₂Ca_2-xBa_xCu₃O_y(B)的样品。此样品的物相和结构分析表明:在Bi系中存在着一种新的单斜相,其晶胞参量为a=24.8 关键词：     

Nb(Ba)加强Bi系中2223相生成作用研究

固相法合成系列名义组成为Bi_2-xNb_xSr₂Ca₂Cu₃O_y(x=0—1.0)的样品,电学和磁学测量表明,当掺入x=0.2—0.3的Nb有明显加强2223相生成的作用,配比为Bi_1.7Nb_0.3Sr₂Ca₂Cu₃O_y时最佳;当掺Ba以部分取代Sr后有明显协同Nb促进2223相生成的作用,比单掺Nb效果更为显著,其中以Bi_1.7Nb_0.3Sr_1.8Ba_0.2Ca₂Cu₃O_y为最优组成。热重分析(TGA)实验显示,掺Nb(Ba)后样品在～600°C出现吸氧增重;XPS中的O_1s峰显示掺Nb(Ba)后除～531eV的主峰外,在～529eV的肩峰更加明显;讨论了Nb(Ba)对晶体结构的可能影响。 关键词：     

Bi1.8Pb0.4Sr2Ca2.2Cu3Oy的磁通运动与临界电流特征

制备了银包套的Bi_1.8Pb_0.4Sr₂Ca_2.2Cu₃O_y带材。微结构观察证明样品是高度织构化的Bi2223单相。输运测量发现J_c(T,B,θ,φ)和R(T,B,θ,φ)均与θ有关,与φ无关(T=77K,B<1T),式中的θ和φ分别表示磁场与ab面和电流的夹角。求得了磁通运动的激活能。提出了热激活磁通弯结的形成与运动模型,并用London理论计算了弯结 关键词：     

Bi系高温超导体的119Sn的穆斯堡尔谱研究

本文采用¹¹⁹Sn作为探针原子,对Bi_1.68Pb_0.32Sr_1.75Ca_1.75Cu_2.65-xSn_xO_y(0.2≤x≤0.8)样品进行室温下穆斯堡尔谱测量,结合X射线衍射与电性能测量结果,分析Sn在样品中的占位情况与电性能之间的关系,并得出四配位Cu位对高T_c相的超导电性起着较关键作用的结论。 关键词：     

(Bi,Pb)4Ca3Sr3Cu4Oy系统的超导电性与相结构的关联

本文研究了两组单相样品Bi,PbCa₃Sr₃Cu₄O_y和Bi₄Ca₃sr₃Cu₄O_y的物相与超导电性之间的关系.发现两组样品同属4334相材料,但它们的超导电性存在很大差异.引起这种差别的原因可能来自于晶胞内部的原子排列,氧缺位的数目及其分布,以及电子结构等精细结构的不同. 关键词：     

Bi1.6Pb0.4Sr2Ca2Cu3Ox超导体中调制结构的可逆变化

Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_x超导体在65O℃O₂中等温退火,调制结构由纯Pb型,经由Bi,Pb混合型,最后变为纯Bi型;反之,经Q₂处理后,又在650℃流动N₂中等温退火,调制结构又由纯Bi型,过渡到Bi,Pb混合型,最终将恢复到纯Pb型,整个过程基本可逆.调制结构的变化与Pb离子运动密切相关,P 关键词：     

富Ca富Cu的Bi(Pb)-Sr-Ca-Cu-O超导电性

采用普通固态反应法制备了名义组分为Bi_2.0-xPb_xSr_1.9Ca_2.2Cu_3.3O_y超导体,并系统研究了样品的X射线衍射谱。结果表明:富Ca富Cu加速了2223相形成,拓宽了Bi系的单相化烧结温区,并获得了品质优良的110K单相多晶样品;低温退火有助于提高样品的单相化程度。 关键词：     

含Sb的Bi系超导体的研究

Bi-Sr-Ca-Cu-O系中掺入适量的Sb,其高温相(110K相)含量明显多于不掺Sb样品。Sb具有加速高温相形成的作用。对于各义组分为Bi_2-xSb_xSr₂Ca_2.5Cu_3.7O_y的样品,x=0.1最有利于高温相的形成。用液氮中淬火后低温回火的方法,发现在865℃烧结时样品中首先形成的是低温相(80K相),然后再逐渐转变为高温相。T_c值随烧结时间的延 关键词：     

固相反应时Bi1.92Pb0.32Sr2Ca1.7Mg0.3Cu3.07Ox超导体中2223相的生长

用固相反应法合成了名义组分为Bi_1.92Pb_0.32Sr₂Ca_1.7Mg_0.3Cu_3.07O_x的块状样品。X射线衍射谱(XRD)、扫描电子显微镜(SEM)和电子探计X射线分析(EDAX)结果以及块状和粉状试样的交流磁化率测量表明,样品中存在110和85K两个超导相;2223相(110K)首先在2212相(85K)晶体的晶界和外部区域生成。本文认为,最初存 关键词：     

新型超导体MgB2和MgCNi3热、电输运性质研究

报道了两种新型超导体MgB₂,MgCNi₃和氧化物高温超导体Bi_{2< /sub>Sr2Ca0.9Ce0.1Cu2O8+y 的热导率-温度关系和电阻率-温度关系.实验发现氧化物高温超导 体在进入超导态后热导有所上升，出现极大值后再下降，而MgB2和MgCNi3 则单调下降. 由Wiedemann-Fra 关键词： 热导率 超导体 2}')" href="#">MgB₂ 3')" href="#">MgCNi₃     

Irreversibility line and flux pinning properties in iron-based high-Tc superconductor SmFeAsO0.85

The irreversibility line and flux pinning properties of high-T_c superconductor SmFeAsO_0.85 were studied using DC magnetization data. Polycrystalline SmFeAsO_0.85 was prepared in a high pressure synthesis apparatus under the pressure of 6 GPa. The results of DC susceptibility showed the superconducting transition at about 55 K. A critical current density J_c(B) was calculated using Bean’s critical state model. At low temperatures (20 K), J_c(B) showed a relatively high value with weak dependence on an applied magnetic field. At higher temperatures, a stronger dependence of the magnetic field was observed, which resulted from decrease in a critical current density probably due to the flux creep effect. The irreversibility line (IL) agreed well with the flux creep theory of Matsushita et al. A comparison of normalized pinning force density with the theoretical models showed that the irreversible behavior in SmFeAsO_0.85 is dominated mainly by normal point pinning (δT_c) and surface pinning mechanisms.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Transport critical-current and voltage-current characteristics of Bi(2223) silver-clamped thick films

The transport critical current properties of Bi(2223) silver-clamped thick films are studied by the measurement of its dependence on magnetic field and temperature close to T _c. It is found that the transport critical current follows a power law J _c(1–T/T _c)^3/2 for the sample with J _c>2.0×10⁴ A/cm² (77K, zero field) and that J _c(H) is basically reversible for increasing and decreasing magnetic field. After the transport current exceeds the critical current, the voltage-current (V-I) characteristics show a flux-creep-like behaviour until they smoothly join the flux-flow state. From the measurement of V-I curves, the pinning property of the sample may be estimated using the flux-creep mode. The flux-flow resistance is found to have a nonlinear magnetic field dependence.     

Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Transport properties of long monofilamentary Bi(2223) tapes

Summary Monofilamentary Bi(2223) tapes withJ _c(77 K, 0 tesla) up to 30 000 A/cm² have been prepared by cold rolling using the powder-in-tube method. An optimization of the precursor powders has led to a higher phase purity after the reaction heat treatment. The deformation process has been optimized in order to increase the oxide density and to reduce sausaging effects on the oxide thickness. The transport properties of these tapes have been studied in a wide range of temperature (4.2K-T _c) and magnetic fields (up to 28 tesla). The critical-current values at 77 K fields of 0.5 T and 1 T parallel to the tape surface are 10 000 A/cm² and 5400 A/cm², respectively. At 4.2 K theJ _c value decreases from 1.6·10⁵ A/cm² at 0 T to 6·10⁴ A/cm² at 15 T. At fields higher than 15 tesla a very low field dependence ofJ _c has been found, regardless of the tape orientation. Transport properties have also been studied by cutting small sections of the tape in order to investigate the local critical-current distribution. It has been found that, even in rolled tapes of good quality (J _c (77 K, 0 T)>20000 A/cm²), theJ _c distribution is homogeneous: the critical current density increases gradually from the centre of the tape to the sides, the latter exhibiting much higherJ _c (46000 A/cm²) than in the centre (18000 A/cm²). Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Flux pinning in columnar-structured and single crystalline MgB2 films

We have investigated the flux pinning effect of columnar grain boundary in columnar-structured and single crystalline MgB₂ films. The MgB₂ films with columnar structure showed much higher J_c than that of single crystalline thin film, and sample having smaller grain size had a higher J_c in high magnetic fields. At 5 K, the MgB₂ film with grain size of 460 nm showed an abnormal double-peak behavior in pining force density, F_p(B), caused by competition of different types of pinning sites, such as planar defects and point defects. Field dependences of F_p in columnar-structured films suggest that the columnar grain boundary is a strong pinning source in the MgB₂ film and it plays a crucial role in enhancing J_c over a wide range of magnetic fields and temperatures.     

Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

In this paper, we study the doping effect of sorbic acid (C₆H₈O₂), from 0 to 20 wt.% of the total MgB₂, on critical temperature (T_c), critical current density (J_c), irreversibility field (H_irr) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J_c(B) in the framework of percolation theory and it is found that the J_c(B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J_c is due to the reduction of anisotropy in high field region.     

Different types of vortex pinning contribution to critical current density in YBa2Cu3O7−δ /YSZ quasi-multilayer

The quasi-multilayer films of YBa₂Cu₃O_7−δ /YSZ (YSZ denotes Yttria Stabilized Zirconia) are prepared by means of pulsed laser deposition (PLD), and a systematic study of the magnetic-field and temperature dependence of the critical current density J _c(H,T) for the YBCO/YSZ quasi-multilayer film is presented. Angular-dependent J _c(H,T) measurements have demonstrated that the growth control strategy is very effective in preventing the vortex motion at high fields and high temperatures. The temperature dependence of isotropic and anisotropic contribution to J _c is investigated in order to evaluate the strength of the defects. It is suggested that at high applied fields (such as 7 T), the pinning contribution of the YBCO/YSZ quasi-multilayer is dominated by the anisotropic disorders, while at intermediate-low fields (such as 1 and 3 T) the pinning contribution is determined by both isotropic and anisotropic disorders.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.