Dy掺杂对Sr2Bi4Ti5O18铁电陶瓷性能的影响

用传统固相烧结法制备了Sr₂Bi_4-xDy_xTi₅ O₁₈(SBDT-x, x=0—0.20)陶瓷样品. x射线衍射分析表明, 微量的Dy掺杂没有影 响Sr₂Bi₄Ti₅O₁₈(SBTi) 原有的层状钙钛 矿结构. 通过研究样品的介电特性, 发现Dy掺杂减小了材料的损耗因子, 降低了样品铁电- 顺电相转变的居里温度. 铁电性能测量结果表明, 随Dy含量的增加, SBDT-x系列样品的剩余 极化先增大, 后减小. 当Dy掺杂量为0.01时, 剩余极化达到最大值, 约为20.1 μC·cm^-2. 掺杂引起剩余极化的变化, 与材料中缺陷浓度、内应力以及晶格畸变程度等因 素有关, 是多种作用机理相互竞争的结果. (Bi₂O₂)²⁺ 层通常被看作是绝缘层和空间电荷库, 对材料的铁电性能起关键作用. 掺杂离子进入(Bi2O₂)²⁺层会导致铁电性能变差. 关键词： 2Bi₄Ti₅O₁₈陶瓷')" href="#">Sr₂Bi₄Ti₅O₁₈陶瓷 Dy掺 杂 铁电性能 居里温度     

(1-x)(K0.5Na0.5)NbO3-xSrTiO3陶瓷的弛豫铁电性能

通过对（1-x）（K_0.5Na_0.5）NbO₃-xSrTiO₃（0≤x≤0.15）陶瓷的相组成、晶体结构和介电性能的研究发现,该陶瓷为单一的钙钛矿结构相.当x含量较小（x＜0.1）时为正交相结构,x≥0.1时转变为四方相结构.随着SrTiO₃掺杂量的增加,样品的致密度增加,样品由正常铁电相逐渐向弥散铁电相转变,且相 关键词： 弛豫铁电体 0.5Na_0.5）NbO₃铁电陶瓷')" href="#">（K_0.5Na_0.5）NbO₃铁电陶瓷 3掺杂')" href="#">SrTiO₃掺杂 相变温度     

La0.4Ca0.6MnO3系统中Mn位Fe和Cr掺杂效应的比较性研究

利用固相反应法制备了Mn位Fe³⁺和Cr³⁺掺杂的系列锰氧化物La_0.4Ca_0.6(Mn_1-x(y)B_x(y))O₃ (B=Fe³⁺ (0≤x≤0.1); Cr³⁺ (0≤y≤0.1)) 多晶样品,研究了掺杂对样品输运性质的影响.实验结果表明两种离子具有截 关键词： 锰氧化物 反铁磁 磁电阻效应     

La掺杂SrBi4Ti4O15铁电材料性能研究

按x=0.00，0.10，0.25，0.50，0.75和1.00，采用固相烧结工艺，制备了不同La掺杂量的SrBi_4-xLa_xTi₄O₁₅的陶瓷样品. 用x射线衍射对其微结构进行了分析，并测量了铁电、介电性能.结果发现，La掺杂未改变SrBi₄Ti ₄O₁₅的晶体结构.随掺杂量的增加，样品的矫顽场(E_c)下降，剩余极化(2P_{关键词： 4-x}La_xTi₄O₁₅')" href="#">SrBi_4-xLa_xTi₄O₁₅ La掺杂 铁电性能 相变温度 弛豫铁电     

MnBiAl薄膜的磁光及磁性能研究

用真空电子束蒸发制备了MnBi_xAl_0.15薄膜.当0.4≤x≤0.7时,MnBi_xAl_0.15薄膜的Kerr角与MnBi_x薄膜相比有显著增大;而当x＞0.7时,MnBi_xAl_0.15的Kerr角则比MnBi_x的要不,633nm波长测量时,MnBi_{0.5Al0.15的Kerr角为2.75°,而相对应的MnBi0.5薄膜只有1.56°.MnBi05Al0.15薄膜的室温饱和磁化强度Ms为3×10⁵A/m,比MnBi0.5薄膜的Ms(4×10⁵A/m)要小.推测当0.4≤x≤0.7时,Al可能部分占据Bi空位和部分取代Mn位,由于晶格收缩使得Mn 3d电子与Bi 6p电子的杂化概率增大,从而导致其Kerr效应增强. 关键词：}     

Mn位W掺杂对La0.3Ca0.7MnO3体系磁结构的影响

通过对La_0.3Ca_0.7Mn_1-xW_xO₃(x=0.00，0.04，0.08，0.12，0.15)多晶样品M-T曲线、M-H曲线及ESR谱的测量，研究了Mn位W掺杂对电荷有序体系La_0.3Ca_0.7MnO₃磁结构的影响.结果表明，当掺杂量为0.00≤x≤0.08时，体系存在电荷有序(CO)相，AFM/CO态共存于相变温度以下，电荷有序温度T_CO随着W掺杂量的增加而增加；x＝0.04时，样品在低温下为FM相与AFM/CO相共存，在CO相建立前、后均有FM从PM中分离出来；当x≥0.12时，CO态融化，在极低温度下存在顺磁-铁磁(PM-FM)相变. 关键词： 磁结构 电荷有序 融化 Mn位掺杂     

Co含量对Bi6Fe2-xCoxTi3O18样品多铁性的影响

用固相工艺制备了Bi₆Fe_2-xCo_xTi₃O₁₈ (BFCT-x, x=0, 0.2, 0.6, 0.8, 1.0, 1.2, 1.6, 1.8, 和2.0)多铁陶瓷样品, 样品X射线谱分析发现, 随着Co含量的增加, 样品晶格常数出现了先增大后减小的变化. 室温下, BFCT-0.6样品呈现出相对较高的饱和磁化强度, 2M_s约为4.49 emu/g, BFCT-1.0具有最高的剩余磁化强度, 2M_r约为0.89 emu/g. Co含量在0.2 ≤x≤qslant 1.2范围内, 随着Co含量的增加样品顺磁–铁磁相变温度从752 K降至372 K. 小量的Co改善了样品的铁电性能, 当x=0.6时样品样品的铁电性能最佳, 随着含量增大样品铁电性能下降, 但当x >1.2时样品的铁电性能又得到了改善.     

Eu掺杂TbMnO3多晶材料的介电性质

采用固相反应法制备了Tb_0.8Eu_0.2MnO₃多晶材料.对样品的X射线衍射（XRD）分析表明Eu³⁺固溶于TbMnO₃中.测量了样品在低温(100 K ≤T≤ 300 K)和低频下(200 Hz≤f≤100 kHz)的复介电性质.在此温度区间内发现了两个介电弛豫峰.经分析认为低温峰（T≈170 K）起源于局域载流子漂移引起的偶极子极化效应,而高温峰（T≈290 K）则是由离子电导产生的边界和界面层的电容效应引起的.电阻率的测量显示在低温下（T≈230 K）存在明显的导电机制转变. 关键词： 多铁性材料 掺杂 介电性质     

热处理对非晶态合金Nd4Fe96-xBx磁性的影响

本文研究了用单辊急冷方法制备的非晶态合金Nd₄Fe_96-xB_x的晶化,以及热处理对其硬磁性和相组成的影响,发现非晶态合金Nd₄Fe_96-xB_x的晶化温度比相同B含量的非晶态合金Fe_100-xB_x高120—190K,X射线衍射和热磁测量表明,15≤x≤25的样品晶化相是由Nd₂Fe₁₄B(T 关键词：     

BaF2-InF3系统中各个相的离子电导研究

在BaF₂-InF₃系统中存在一个萤石型固溶体Ba_1-xIn_xF_2+x(03(InF₆)₂和BaInF₅。测定了系统中各个相的电导率并和BaF₂-BiF₃系统进行比较。讨论了阳离子极化性和晶体共价性对电性能的影响。 关键词：     

Synthesis of Ge-Sn at high pressure and high temperature in a laser-heated diamond anvil cell

Ge–Sn compound is predicted to be a direct band gap semiconductor with a tunable band gap. However, the bulk synthesis of this material by conventional methods at ambient pressure is unsuccessful due to the poor solubility of Sn in Ge. We report the successful synthesis of Ge–Sn in a laser-heated diamond anvil cell (LHDAC) at ~7.6 GPa &; ~2000 K. In situ Raman spectroscopy of the sample showed, apart from the characteristic Raman modes of Ge TO (Г) and β-Sn TO (Г), two additional Raman modes at ~225 cm^?1 (named Ge–Sn₁) and ~133 cm^?1 (named Ge–Sn₂). When the sample was quenched, the Ge–Sn₁ mode remained stable at ~215 cm^?1, whereas the Ge–Sn₂ mode had diminished in intensity. Comparing the Ge–Sn Raman mode at ~225 cm^?1 with the one observed in thin film studies, we interpret that the observed phonon mode may be formed due to Sn-rich Ge–Sn system. The additional Raman mode seen at ~133 cm^?1 suggested the formation of low symmetry phase under high P–T conditions. The results are compared with Ge–Si binary system.     

Electric quadrupole interactions in nano-structured SnO 2 as measured with PAC spectroscopy

Measurements of the electric quadrupole interaction were used to characterize pure and cobalt-doped samples of SnO₂ prepared by the sol-gel method. Perturbed gamma–gamma angular correlation (PAC) spectroscopy using ¹¹¹In–¹¹¹Cd probe nuclei was employed for these measurements. A methodology was developed for sample preparation that were prepared by sol-gel method from pure metallic Sn (99.9999%) and Co (99.9998%) as starting materials. Carrier-free ¹¹¹In was added to the precursor sol-gel solution prior to the formation of gel. PAC measurements were carried out to follow the formation of the SnO₂. PAC measurements were carried out in the temperature range from 10 k to 1123 K and the results show that the electric quadrupole frequency depends on the annealing temperature.     

Confirmation of the oxygen defect in the Chevrel-phase SnMo6S8 from 119Sn Mössbauer spectroscopy

We report the measurement of ¹¹⁹Sn Mössbauer spectra in both the pure and oxygen-containing Chevrel-phase ternary superconductor SnMo₆S₈. A detailed analysis provides microscopic confirmation that Sn sites are associated with an oxygen-containing point defect. The isomer shift and quadrupole interaction for the oxygen-free Sn site (Sn1) and oxygen associated Sn site (Sn2) are sufficiently distinct to identify the two sites. It is shown that the reduction in T_c by substitution of oxygen for sulfur in the Chevrel phases is not due to charge transfer from the metal ion.     

Mössbauer studies of microscopic disorder in solid electrolytes

We implement for the first time Mössbauer Spectroscopy (MS) to investigate short-range properties of disorder in solid electrolytes. MS in¹²⁹I and¹¹⁹Sn was carried out in RbAg₄I₅ and as impurity in Ag₂Se, respectively. Measurements were performed both in the superionic and the normal phases. It is shown that localized cation hopping is an inherent feature of the α-AgI-type solid electrolytes. In RbAg₄I₅, at temperatures far belowT _c, a small fraction of Ag is still locally mobile and atT>T _c, its concentration increases exponentially. A strong linear temperature dependence of the point-charge electric field gradient is observed and explained in terms of local hopping. With¹¹⁹Sn in Ag₂Se we observe the onset of “local melting” of the Ag surrounding the SnSe₄ cluster at 50 K below the bulk superionic phase transition. The characteristic features of MS related to microscopic studies of solid electrolytes are fully described.     

Electric quadrupole interaction at 111Cd and 119Sn in isostructural NiIn and CoSn compounds

The perturbed angular correlation technique and Mössbauer spectroscopy were applied to study the electric field gradient on ¹¹¹Cd and ¹¹⁹Sn probe atoms in isostructural NiIn and CoSn compounds. The ¹¹¹Cd PAC measurements performed in the temperature range 80--1100 K demonstrated the existence of two axially symmetric EFG's in each of the investigated compounds, related to the 2(d) and 1(a) probe sites in the B35 structure. A 1(a)-site preference for Cd probes in CoSn compound was observed. The temperature dependence of the quadrupole frequencies for ¹¹¹Cd in both compounds, interpreted in terms of the empirical model proposed by Christiansen et al.[1], follows a T^3/2 relation with different slope parameters for each of the observed frequencies. These results are combined with the data from the Mössbauer experiment. The ¹¹⁹Sn Mössbauer spectra taken at liquid nitrogen and at room temperatures showed two quadrupole split doublets with the intensity ratio 2:1 for CoSn and 8:1 for NiIn_0.99Sn_0.01sample, giving an evidence of 2(d)-site preference for tin atoms in NiIn. The EFG values measured on ¹¹⁹Sn are 2.5 to 4 times larger than those on ¹¹¹Cd nuclei, while the ratio of the respective Sternheimer antishielding factors is equal to 0.77. Within the limits of errors no differences were observed in the magnitude and temperature dependence of Debye--Waller factors for 2(d) and 1(a) ¹¹⁹Sn positions in CoSn and NiIn lattices.     

μ+knight shifts and trapping in diluteSbSn alloys

Giant μ⁺ Knight shifts K_μ have been studied previously in Sb andSbBi alloys. Here we report μ⁺SR measurements on Sb with dilute heterovalent Sn impurities. A dramatic concentration dependence is observed: K_μ is increased slightly (relative to the value in pure Sb) by Sn concentrations of <0.1%, whereas larger concentrations cause a drastic reduction of K_μ. One concern could be that K_μ values in the alloy might reflect local band structure in trap sites near Sn impurities rather than the bulk “host” band structure of the alloy. This is indeed the case in bothSbSn (0.03%) andSbSn (0.06%), where a second, lower frequency TF-μSR signal begins to appear for T>60K. The amplitude of the low K_μ signal grows with increasing T at the expense of the amplitude of the high-K_μ, low-T signal, suggesting that the μ⁺ migrates through the host lattice to trap sites. A simple trapping model correctly describes the observed T-dependence of the amplitudes, phases and relaxation rates of the two signals. We conclude that the low-T Knight shift is truly characteristic of the host band structure while the much lower K_μ value of the high-T site is characteristic of a specific trap site, presumably adjacent to a Sn impurity.     

Spin-diffusion lengths in dilute Cu(Ge) and Ag(Sn) alloys

We used current-perpendicular-to-plane (CPP) exchange-biased spin valves to directly measure spin-diffusion lengths ?_sf^N for N=Cu(2.1 at% Ge) and Ag(3.6 at% Sn) alloys. We found ?_sf^{Cu(2% Ge)}=117₋₆⁺¹⁰ nm and ?_sf^{Ag(4% Sn)}=39±3 nm. The good agreement of this ?_sf^{Cu(2% Ge)} with the value ?_sf^{Cu(2% Ge)}=121±10 nm derived from an independent spin-orbit cross-sectional measurement for Ge in Cu quantitatively validates the use of Valet-Fert theory for CPP-MR data analysis to layer thicknesses several times larger than had been done before. From the value of ?_sf^{Ag(4% Sn)}, we predicted the ESR spin-orbit cross-section for Sn impurities in Ag.     

Valence transition and magnetic ordering in Sn doped EuPd2Si2

The sharp, temperature induced, continuous valence transition in EuPd₂Si₂ is drastically changed by doping with Sn at the Si site upto 5 at. %. Only a first order valence transition occurs for a 3% Sn doped sample and the 2⁺ component which survives the valence transition orders magnetically at 4.2 K. No valence transition at all occurs for a 5% Sn doped sample right up to 1.9 K and magnetic ordering sets in around 30 K.     

Magnetic properties and 119Sn hyperfine interaction parameters of LiMn6Sn6

We have synthesized LiMn₆Sn₆, the first RMn₆Sn₆ compound involving an alkali metal as R element. It crystallizes in the hexagonal (P6/mmm) HfFe₆Ge₆-type structure. From magnetic measurements and powder neutron diffraction experiments it is found that LiMn₆Sn₆ magnetically orders at T_C = 380 K in a simple easy-plane ferromagnetic structure (m_Mn = 2.58 μ_B at 2 K). The ¹¹⁹Sn M?ssbauer spectrum recorded at 5 K indicates that the tin nuclei experience huge hyperfine fields (as large as 35 T). Electronic structure calculations are used to gain information about the microscopic origin of both the hyperfine field and electric field gradient at the Sn nuclei. The former arises due to spin-dependent hybridization between the 5s states of Sn and the 3d states of Mn. The latter comes from the 5p charge density close to the nucleus, whose anisotropy is mainly produced through directional interactions with the 3d states of the first Mn neighbors. Comparison between experimental quadrupole splittings and theoretical electric field gradients allows us to propose a value of for the quadrupole moment of the first excited state (I= 3/2) of the ¹¹⁹Sn nucleus.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.