Nd1.85Ce0.15CuO4－δ单晶c-轴方向电阻的低场行为

采用自助熔剂缓冷法成功地生长出了Nd_1.85Ce_{0. 15}CuO_4-δ单晶，其零场下零电阻温度约为21K. 在0—0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线. 结果显示磁场平行和垂直样品表面时的转变温度T_p随磁场的变化均服从H=H₀(1-T_p(h)/T_p(0))²关系. 0.5T 关键词： 1.85Ce_0.15CuO_4-δ单晶')" href="#">Nd_1.85Ce_0.15CuO_4-δ单晶 输运性质     

Bi1.8Pb0.4Sr2Ca2.2Cu3Oy的磁通运动与临界电流特征

制备了银包套的Bi_1.8Pb_0.4Sr₂Ca_2.2Cu₃O_y带材。微结构观察证明样品是高度织构化的Bi2223单相。输运测量发现J_c(T,B,θ,φ)和R(T,B,θ,φ)均与θ有关,与φ无关(T=77K,B<1T),式中的θ和φ分别表示磁场与ab面和电流的夹角。求得了磁通运动的激活能。提出了热激活磁通弯结的形成与运动模型,并用London理论计算了弯结 关键词：     

磁场对重电子金属材料CeCu6-xCdx电阻的影响

介绍了重电子金属CeCu6-x_6-xCdx_x（x=010，015，020，0 30，050）在18—300K温度范围内,在磁场(μ0₀H=0，5，10T)下电阻 随温度的变化规律 及低温（19 ，15K）下的磁电阻（μ0₀H=0—10T）.实验表明所有样品在 零场下的Tmax_max（对应于电阻极大值的温度）都低于18K.加磁场后，Tmax _max随磁场和掺杂量 关键词： 重电子系统 低温电阻 近藤散射 相干散射     

(BiPb)-Sr-Ca-Cu-O2223相高Tc超导体磁通钉扎与蠕动

本文介绍了(BiPb)-Sr-Ca-Cu-O2223相高T_c超导体烧结工艺,用振动样品磁强计测量了磁化强度地豫率随外磁场的变化,并相应求得钉扎势U₀随外磁场的依赖关系。发现在0—0.23T外磁场范围内U₀与外磁场B的关系为U₀-B^-1/2与Palstra对单晶用电阻展宽实验所得结果有类似的函数形式。 关键词：     

磁场对La2－xSrxCuO4单晶热导的影响研究

报道了系列欠掺杂La_2-xSr_xCuO₄（x=0063,0070,0 090,0110,0125）单晶的零场和加磁场情况下ab面和c方向的热导率与温度的关系曲线，测量 温度范围从2到45K. 研究发现ab面和c方向的热导率都受到磁场的压制. 而且在磁场 的作用下，热导压制率随温度变化的关系和场致反铁磁有序的增强与温度的依赖关系有高度 相似性. 认为磁场引起的ab面的热导压制主要是电子热导的变化所致，而c方向的 压制则可能主要来源于声子热导的变化，它们均可能与磁场诱导下欠掺杂La_2-x Sr_xCuO₄的某种电荷有序和磁有序的增强密切相关. 关键词： 热导 电荷有序 磁有序     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)= U0(1-T/(Tc+δ))n (1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)= 2.26.     

Nd1.85Ce0.15 CuO4-δ单晶c-轴方向电阻的低场行为

采用自助熔剂缓冷法成功地生长出了Nd1.85Ce0.15CuO4-δ单晶,其零场下零电阻温度约为21K.在0-0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线.结果显示磁场平行和垂直样品表面时的转变温度Tp随磁场的变化均服从H=H0(1-Tp(h)/Tp(0))2关系.0.5T不同角度下的转变温度Tp符合有效质量模型,即Tp∝H1/12(cos2θ+sin2θ/γ2)1/4.该单晶的各向异性因子γ约为45.     

La2/3Ca1/3Mn1-xCuxO3(x=0.15)系统低温下的电阻极小值现象及其起因

实验研究了La_2/3Ca_1/3Mn_1-xCu_xO₃(x=0和0.15)样品在温度远低于居里温度时的电阻随温度的变化行为.发现未加磁场时,Cu掺杂样品在低温下表现出电阻极小值行为.这一极小值现象在外加磁场后消失.基于Kondo理论,对实验观察进行了讨论,并作了定量的理论与实验的比较. 关键词：     

Bi系2223相银包套带材在15-77K温度范围的临界电流密度和磁通钉扎

实验测量了具有较高临界电流密度J_c(J_c=1.6×10~4A/cm~2.77K,OT)的Bi系2223相银包套带材在15-77K温度范围内的临界电流密度J_c与温度和磁场的关系,实验结果用热激活磁通蠕动模型予以解释,并求出钉扎势U_0随外磁场的依赖关系,发现在0-1T外磁场范围内,U_0与外磁场H的关系为U_0=0.069H~(-0.08)(eV),其中H的单位为千高斯。     

Bi2223/Ag超导带背景场损耗和磁场响应特性研究

采用改进的瓦特计技术,研究了在77K和低场范围内单芯和多芯Bi2223/Ag超导带的背景场损耗(包括表面损耗、磁滞损耗和耦合损耗)和在交变外磁场下的穿透电压与磁场响应特性.最小磁场小于1×10-4T.单芯带材和大块超导体的损耗一致,在整个磁场范围内损耗和磁场符合指数关系,Q∝Hn:当HHp时, n≈1.1,损耗主要是磁滞损耗.从单芯带材的损耗曲线我们得到了Bi2223相的Hc1≈6×10-4T.对于多芯带材而言,损耗由磁滞损耗和耦合损耗组成,耦合损耗起主要作用,损耗和磁场符合指数关系,Q∝Hn:当HHp时, n≈1.7, 损耗包括磁滞损耗和耦合损耗,耦合损耗占主要部分.在磁场小于1×10-4T的低场下,单芯和多芯带材损耗研究结果目前还未见报道.研究了超导体中穿透电压和外磁场的响应关系,给出了穿透电压和外磁场的关系曲线,结合超导体中的磁化强度变化过程对曲线给出了合理的解释.     

高Jc Tl系2223相银包套带材的磁通钉扎和耗散

测量了Ｔｌ系２２２３相银包套超导带（Ｊ_c＝１．５×１０^４Ａ·ｃｍ^-2，７７Ｋ，０Ｔ）在０－０．８Ｔ磁场下电阻转变展宽，实验结果引用热激活磁通蠕动模型加以解释。磁场平行于带面（Ｈ∥ａｂ面）和磁场垂直于带面（Ｈ⊥ａｂ面）两种情况下，激活能与磁场之间满足幂指数关系：Ｕ_0∥＝０．２１ H^-0.3(eV),Ｕ_0⊥＝０．１5 H^-0.4(eV)，其中Ｈ的单位为ｋＧ。 关键词：     

YBa2Cu3O7-δ外延薄膜的有效钉扎势

在0—7T磁场范围内，测量了不同测量电流密度下YBa₂Cu₃O_7-δ外延薄膜的电阻温度关系.实验结果表明，临界温度以下，混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系，有效钉扎势的温度和磁场关系遵守U∝(1-T/T_c)H^-α关系，其中α=0.63，与热激活磁通点阵位错运动模型相一致，表明样品具有2D涡旋性质. 关键词：     

熔融织构(Nd-Eu-Gd)-Ba-Cu-O超导体的各向异性磁通跳跃及其不稳定性研究

对c轴择优取向的熔融织构样品(Nd_0.33Eu_0.33Gd_0.33) Ba₂Cu₃O_7-δ（含Gd(211)相）的磁通跳跃现象进行 了系统研究.结果表明，在外加磁 场平行于样品c轴条件下，在2到3K的温度范围内明显观测到了部分磁通跳跃现象，而 在5K及以上温区并未出现.在磁场垂直于样品的c轴情况，在2K到T_c的整个温 区都没有观察到磁通跳跃现象.这种各向异性磁通跳跃现象可归因于各向异性钉扎力和几何 退磁因子的结果.随着温度的增加，磁通跳跃数目减少，且M(H)曲线的第三象限是磁通 跳跃的最不稳定过程.最后，研究了磁通跳跃对磁场扫描速率的依赖关系，并讨论了磁通蠕 动对磁通跳跃的影响. 关键词： 0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_7-δ超导体')" href="#">(Nd_0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_7-δ超导体 OCMG方法 磁通跳跃     

BROADENING OF RESISTIVE TRANSITION AND IRREVERSIBILITY LINE FOR EPITAXIAL YBa2Cu3O7-$\delta$ THIN FILM

The broadening of resistive transition of c axis oriented epitaxial YBCO thin film has been measured for three configurations: (1) H∥c and H⊥I; (2) H∥ab plane and H⊥I; (3) H∥ab plane and H∥I in magnetic field up to 8 Teala(T), and for different angle θ of magnetic field relative to the ab plane with H = 4T. The results obtained indicate that the broadening of resistive transition is mainly determined by the angle θ, but is hardly related to the angle α made between magnetic field and tran sport current in ab plane. This means that the broadening of resistive transition is not determined by flux motion drived by apparent Lorentz force. Au expression of angular dependence of irreveraibility line has been given.     

Self-similar distribution in “giant” magnetic flux creep

The problem of magnetic field penetration into the half-space is considered in parallel geometry in an external magnetic field increasing with time in accordance with the law B(0, t, τ₀ = B _{c 1} (1 + t/τ₀) ^m , m ≥ 0, t ≥ 0 (τ ₀ is the time of magnetic flux redistribution and B _{c 1} is the lower critical field). It is assumed that the flow of vortices is thermally activated in the “giant” creep mode (i.e., for weak pinning creep and high temperatures). A model equation is derived for describing the magnetic flux evolution. Analytic formulas are obtained for the depth and velocity of magnetic field penetration. It is shown that the giant creep regime is stable for 0 ≤ m ≤ 1/2.     

Effect of grain-boundary flux pinning in MgB2 with columnar structure

We studied the flux pinning properties by grain boundaries in MgB₂ films prepared by using a hybrid physical chemical vapor deposition method on the c-axis oriented sapphire substrates. All the films we report here had the columnar grains with the growth direction perpendicular to the substrates and the grain sizes in the range of a few hundred nanometers. At very low magnetic fields, no discernable grain-boundary (GB) pinning effect was observed in all measuring temperatures, but above those fields, the effect of GB flux pinning was observed as enhanced critical current densities (J_cs) and reduced resistances when an external magnetic field (B) was aligned parallel to the c-axis. We interpret the B dependence of J_c in the terms of flux line lattice shear inside the columnar grains activated by dislocations of Frank–Read source while the flux lines pinned by GB act as anchors for dislocations. Magnetic field dependence of flux pinning force density for B parallel to the c-axis was reasonably explained by the above model.     

Angular dependences of critical current density in YBCO thin films with crossed columnar defects

We investigated the dependences of the critical current density J_c on the magnetic field angle θ in YBa₂Cu₃O_7−δ thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J_c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current–voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.     

Irreversibility line and flux pinning properties in iron-based high-Tc superconductor SmFeAsO0.85

The irreversibility line and flux pinning properties of high-T_c superconductor SmFeAsO_0.85 were studied using DC magnetization data. Polycrystalline SmFeAsO_0.85 was prepared in a high pressure synthesis apparatus under the pressure of 6 GPa. The results of DC susceptibility showed the superconducting transition at about 55 K. A critical current density J_c(B) was calculated using Bean’s critical state model. At low temperatures (20 K), J_c(B) showed a relatively high value with weak dependence on an applied magnetic field. At higher temperatures, a stronger dependence of the magnetic field was observed, which resulted from decrease in a critical current density probably due to the flux creep effect. The irreversibility line (IL) agreed well with the flux creep theory of Matsushita et al. A comparison of normalized pinning force density with the theoretical models showed that the irreversible behavior in SmFeAsO_0.85 is dominated mainly by normal point pinning (δT_c) and surface pinning mechanisms.     

YBa2Cu3Oy中氧缺位的磁通钉扎效应

制备了一组不同氧含量(T_cmid>90K)的YBa₂Cu₃O_y单相多晶样品。对其结构、超导电性和磁通钉扎行为的观测结果表明:氧缺位导致临界电流密度J_c和钉扎力密度F_p同时增加,存在一最佳的氧缺位浓度,可使J_c和F_p有最大程度提高。与氧含量y=6.96和6.83时的情况不同,对y=6.94和6.86的样品,其J_c 关键词：