非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相, 非晶硅薄膜开始呈现了晶化现象;退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm;退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为1.5μm.     

离子注入的铝在Si(100)表面的偏析及其引起的纳米团簇和合金晶粒形成现象的实验研究

通过高温退火注入了铝的Si(100)样品,探讨偏析出来的铝在硅表面的热力学行为.由900℃的退火实验发现,偏析出来的铝原子一方面形成Si(100)基底的外延铝膜和铝岛,另一方面与硅原子结合形成尺度约为2—3nm的铝硅团簇.而1200℃的退火实验显示,铝和硅的快速冷凝形成了立方晶系的Al₄Si合金晶粒、尺度约为20—30nm.细小的铝硅团簇在结构上独立于样品基底并且趋于聚集成团,很可能是在高温退火和快速降温过程中形成铝硅合金晶粒的前驱. 关键词： 硅表面 铝掺杂 团簇 4Si')" href="#">Al₄Si     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

不同退火温度下晶化硅薄膜的电学输运性质

采用等离子体化学气相沉积技术制备氢化非晶硅薄膜,经过不同温度下的热退火处理,使薄膜由非晶结构向晶化结构转变,得到含有纳米晶粒的晶化硅薄膜.在晶化过程中,采用Raman技术对样品的结构进行表征.通过变温电导率的测试,对薄膜的电学输运性质进行了分析.研究结果表明：退火温度为700 ℃时,样品中开始有纳米晶形成,随着退火温度的增加,样品的晶化比增大,在1000 ℃时,薄膜的晶化比达到90%以上.在700 ℃退火时,薄膜中晶化成分较低,载流子的传输特性主要受到与硅悬挂键有关的缺陷态影响,表现为带尾定域态的跳跃电导 关键词： 氢化非晶硅 退火 纳米硅 电输运     

退火温度对溅射铝膜结构与电性能的影响

 采用直流磁控溅射方法成功地制备了Al膜,研究了退火温度对Al膜表面形貌、晶体结构、应力、择优取向及反射率的影响。研究表明：不同退火温度的薄膜晶粒排布致密而光滑,均方根粗糙度小。XRD测试表明：不同温度退火的铝膜均成多晶状态,晶体结构为面心立方,退火温度升高到400 ℃时,Al膜的应力最小达0.78 GPa,薄膜平均晶粒尺寸由18.3 nm增加到25.9 nm;随着退火温度的升高,(200)晶面择优取向特性变好。薄膜紫外-红外反射率随着退火温度的升高而增大。     

不同退火温度对球磨法制备La2/3Ca1/3MnO3的微观结构和电磁输运行为的影响

本文研究了在球磨法制备La_(2/3)Ca_(1/3)MnO_3的过程中,不同退火温度对多晶陶瓷样品在微观结构和电磁输运行为方面的影响.结果表明,退火温度为850℃时,样品已经形成La_(2/3)Ca_(1/3)MnO_3相;900℃以下,样品的晶粒为200~300nm,存在明显的晶界效应,在低温区出现明显的CMR效应;随退火温度升高,晶粒迅速长大至微米级,在1400℃退火时达4~5μm,表现出与固相反应法样品类似的性质,并且在金属-半导体转变温度附近出现较大的CMR峰值,在0.3T外场下达22%.     

Fe基纳米晶合金晶粒尺寸反常变化的物理机制

晶粒尺寸在很大程度上决定了Fe基纳米晶合金的磁学性能,其随退火温度变化的物理机理是纳米晶领域重要的研究内容.研究了初始晶化温度与二次晶化温度之间退火1 h Fe基纳米晶合金晶粒尺寸随退火温度的变化,并建立了相应的模型.利用提出的模型分析了该温度范围内Fe基纳米晶合金晶粒尺寸随退火温度升高先减小后增大的物理机制. 研究发现,在初始晶化温度与二次晶化温度之间等时退火,当退火温度约为Fe基纳米晶合金熔点的0.6倍时其晶粒尺寸最小.在研究的温度区间内,理论研究结果与实验符合得较好. 本研究提供了一种快速获得小晶粒尺寸纳米晶合金的方法.     

温度梯度对晶粒生长行为影响的相场模拟

利用相场法建立了一个可应用于研究温度梯度影响下的晶粒生长行为的二维模型,模拟了多晶材料退火过程中由温度梯度引起的非均匀晶粒生长和定向晶粒生长行为.结果表明:退火过程中,在静态温度梯度的影响下,体系的晶粒呈现不均匀生长,且从晶粒生长指数来看,不同程度地偏离了正常晶粒生长;在动态温度梯度的影响下,体系内部常出现柱状晶粒生长,柱状晶粒前端持续生长至温度最高位置;柱状晶粒生长与动态热源的移动速率密切相关,只有当动态热源的移动速率处于最小和最大晶粒生长速率之间时,柱状晶粒才会出现. 关键词： 晶粒生长 相场法 晶界迁移率 局部退火     

铝诱导非晶硅薄膜的场致低温快速晶化及其结构表征

铝诱导非晶硅薄膜晶化可以降低退火温度、缩短退火时间，是制备多晶硅薄膜的一种重要方法.在此基础上，通过在退火过程中加入电场加速了界面处硅、铝原子间的互扩散，实现了非晶硅薄膜的快速低温晶化.实验结果表明，外加电场，退火温度为400℃，退火时间为60min时，薄膜的晶化率大于60％；退火温度为450℃退火时间为30min时，薄膜已经呈现明显的晶化现象；退火温度为500℃退火时间为15min时，薄膜的x射线多晶峰强度与非晶峰强度之比为未加电场的3—4倍. 关键词： 非晶硅薄膜 多晶硅薄膜 外加电场     

快速热退火引起GaAs/AlGaAs双量子阱中铝原子的扩散研究

用分子束外延生长了GaAs/AlGaAs双量子阱激光器结构样品，并对不同温度快速热退火导致量子阱组分无序即阱和垒中三族元素的扩散过程进行了实验和理论研究.用光荧光技术测量退火样品的n=1量子阱能级跃迁峰值位置，结果表明退火前后样品量子阱能级位置发生蓝移，蓝移量随温度的提高而增大.对退火过程中GaAs/AlGaAs量子阱中三族元素的扩散过程进行了理论分析，并与实验结果相比较，获得了不同退火温度下铝原子的扩散系数和扩散过程的激活能.950℃，30s退火条件下，铝原子的扩散系数为6.6×10^{-16相似文献}   

Enhanced metal-induced-crystallization of hydrogenated amorphous silicon by electric field

This article demonstrates that metal-induced crystallization of PECVD grown amorphous silicon can be enhanced by the application of an external electrical field. Results from the observation of the Si(111) XRD peak height of the thermally annealed Si/Al/glass structure show that at very high vertical electric field (up to 7000 V/cm) no enhancement on aluminum induced crystallization of a-Si is found, whereas a clear enhancement of crystallization can be observed for the horizontal electric field as low as 100 V/cm. Mechanisms are proposed to explain such an observation, and it is suggested that the vertical Al/Si interdifussion process is prolonged under horizontal electric fields because of the presence of electron-collision caused by Al or AlSi_x ions, which allows more nucleation to take place. PACS 61.10.Kw; 81.10.Jt; 81.40.-z     

低温铝诱导晶化制备纳米晶硅薄膜的物相和光学性能研究

采用射频磁控溅射镀膜系统,在玻璃衬底上制备了非晶硅(α-Si)/铝(Al)复合薄膜,结合氮气(N₂)气氛中低温快速光热退火制备了纳米晶硅(nc-Si)薄膜;利用光学显微镜、共焦光学显微仪、X射线衍射(XRD)仪、拉曼散射光谱(Raman)仪和紫外-可见光-近红外分光光度计(UV-VIS-NIR)对纳米晶硅薄膜的表面形貌、物相及光学性能进行了表征,研究了退火工艺对薄膜性能的影响。结果表明： 300 ℃,25 min光热退火可使α-Si/Al膜晶化为纳米晶硅薄膜,晶化率为15.56%,晶粒尺寸为1.75 nm;退火温度从300 ℃逐渐升高到400 ℃,纳米晶硅薄膜晶粒尺寸、晶化率、带隙逐渐增加,表面均匀性、晶格畸变量逐渐减小;退火温度从400 ℃逐渐升高到500 ℃,纳米晶硅薄膜的晶粒尺寸、晶化率继续增加,带隙则逐渐降低;采用纳米晶硅薄膜的吸光模型验证了所制备的纳米晶硅薄膜的光学特性,其光学带隙的变化趋势与吸光模型得出的结果一致。     

Mechanism of Bi2Sr2CaCu2Ox crystallization and superconducting properties for Bi2Sr2CaCu2Ox/Ag tapes prepared using isothermal partial melting method

The mechanism of Bi₂Sr₂CaCu₂O_x (Bi-2212) crystallization from a partially molten state has been studied by means of thermal analysis, X-ray diffraction (XRD) measurement, and microstructural observation in Bi-2212/Ag tapes. Tapes have been prepared using the isothermal partial melting (IPM) method, under which partial melting and solidification are carried out at the same temperature in an nitrogen atmosphere and 20% oxygen partial pressure (p(O₂)), respectively. The Bi-2212 phase crystallizes by peritectic reaction between (Sr, Ca)CuO₂ (1:1 phase) and the liquid phase at processing temperatures (T_p)≥855°C. At the beginning of Bi-2212 crystallization, only the 1:1 and the liquid phases are present in tapes. The Bi-2212 nucleation occurs in the vicinity of 1:1 grains (homogeneous nucleation). This peritectic reaction progresses by recovery of oxygen in the liquid phase. In contrast, the nucleation of the Bi-2212 phase occurs heterogeneously at T_p≤850°C. The Bi-2212 phase co-exists with four Bi-free phases ((Sr, Ca)₁₄Cu₂₄O₄₁ (14:24 phase), (Sr, Ca)₂CuO₃ (2:1 phase), (Sr, Ca)O (1:0 phase), and the 1:1 phase) and the liquid phase in the early stage of the Bi-2212 crystallization step. Since the precipitation temperature of the Bi-2212 phase is higher than 850°C, the Bi-2212 crystallization progresses by direct precipitation. The crystallization paths affect microstructure and transport critical current density (J_c) of Bi-2212 tapes.     

Crystallization of polycarbonate from the glassy state. part II. Thin films melted and quenched

The crystallization of glassy amorphous thin polycarbonate films quenched from the melt has been followed. Structures similar to those observed during the crystallization of films containing small amount of adsorbed solvent are formed. However, crystallization, at the same temperatures, is much slower and more irregular. Preannealing of the samples below T_g affects the crystallization process, increasing the nucleation rate. Annealing above T_g does not destroy all order gained by annealing below T_g.     

Crystallization and surface morphology of Au/SiO2 thin films following furnace and flame annealing

A crystallization and surface evolution study of Au thin film on SiO₂ substrates following annealing at different temperatures above the eutectic point of the Au/Si system are reported. Samples were prepared by conventional evaporation of gold in a high vacuum (10⁻⁷ mbar) environment on substrates at room temperature. Thermal treatments were performed by both furnace and flame annealing techniques. Au thin films can be crystallized on SiO₂ substrates by both furnace and flame annealing. Annealing arranges the Au crystallites in the (1 1 1) plane direction and changes the morphology of the surface. Both, slow and rapid annealing result in a good background in the XRD spectra and hence clean and complete crystallization which depends more on the temperature than on the time of annealing. The epitaxial temperature for the Au/SiO₂ system decreases in the range of 350-400 °C. Furnace and flame annealing also form crystallized gold islands over the Au/SiO₂ surface. Relaxation at high temperatures of the strained Au layer, obtained after deposition, should be responsible for the initial stages of clusters formation. Gold nucleation sites may be formed at disordered points on the surface and they become islands when the temperature and time of annealing are increased. The growth rate of crystallites is highest around 360 °C. Above this temperature, the layer melts and gold diffuses from the substrate to the nucleation sites to increase the distance between islands and modify their shapes. Well above the eutectic temperature, the relaxed islands have hexagonally shaped borders. The mean crystallite diameters grow up to a maximum mean size of around 90 nm. The free activation energy for grain boundary migration above 360 °C is 0.2 eV. Therefore the type of the silicon substrate changes the mechanism of diffusion and growth of crystallites during annealing of the Au/Si system. Epitaxial Au(1 1 1) layers without formation of islands can be prepared by furnace annealing in the range of 300-310 °C and by flame annealing of a few seconds and up to 0.5 min.     

GGG单晶的助熔生长与成核温度的确定

我们研究了GGG单晶的助熔生长,实验证明在PbO-PbF₂系助熔剂中GGG结晶的组分范围相当宽,生长相当稳定,而且位错密度较低。用感生条纹技术确定了GGG晶体生长的成核温度。 关键词：     

Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing

Metal-induced crystallization method is one of the favorable non-laser crystallization methods for thin-film transistors in large-area displays. However, it is necessary to reduce metal contamination in the film to lower leakage current for the device applications. A new two-step crystallization method, consisting of a nucleation step by AlCl₃ vapor-induced crystallization and a grain growth step by a pulsed rapid thermal annealing, has been proposed to increase the grain size and reduce the residual metal contamination in crystallized poly-Si films. The grain size of the poly-Si film crystallized by the VIC + PRTA two-step crystallization process was as large as 70 μm. Furthermore, the Al concentration in the poly-Si film was reduced by two orders of magnitude from 1 × 10²⁰ cm^?3 by VIC only process to 1.4 × 10¹⁸ cm^?3 by the two-step process. As a result, the minimum leakage current of poly-Si TFTs using the poly-Si film prepared by the two-step process was reduced from 1.9 × 10^?10 A/μm to 2.8 × 10^?11 A/μm at a drain voltage of 5 V, without carrier mobility degradation.     

Controlling surface plasmon excitation of pair arrays of metallic nanocylinders

The polyvinyl alcohol (PVA)/halloysite nanotubes (HNTs) solution were prepared with the aid of ultrasonic treatment. The composite films were prepared through casting or coagulating the PVA/HNTs solution. The coagulation process was employed to obtain a composite film without aggregation of HNTs. It is shown that the particle size and distribution of HNTs in the PVA/HNTs solution is independent of the ratio between HNTs and PVA. It is also revealed that the aggregation of HNTs takes place during the drying process of the as cast film. Compared with the film by coagulation method, the HNTs in the as cast film show less profound effect on the nucleation of the crystallization of the PVA. The crystallization temperature initially increases with HNTs loading and overloading of HNTs tend to depress the improvement in the crystallization temperature. The glass transition temperature (T_g) of the composite film decreases with HNTs loading and the aggregation process shows practically no effect on the T_g. Inclusion of HNTs greatly depresses the decomposition of the PVA backbone, while it is not effective for improving the resistance to the abstraction of the side groups. The aggregation process at low concentration of HNTs has more significant effect on the thermal decomposition of composite films compared with that at high concentration. PACS 61.82.Pv; 61.46.Fg; 61.46.-w; 68.37.Lp; 67.80.Gb     

Surface and bulk crystallization of amorphous alloys Ni-Si-B probed by electrical resistivity

Electrical resistivity measurements are tested as a sensitive probe of the crystallization processes in amorphous metallic alloys of Ni₇₈Si₇B₁₅, rendering the determination of nucleation rates at the surface and in bulk. It is shown that the increase in the electrical resistivity just below the crystallization temperature is mainly due to nucleation phenomena. Moreover, the Avrami coefficient, calculated from resistivity data, provides information about types of crystallization mechanisms, dimensionality of the crystallite growth and the sequence of crystallization stages.     

Effects of Montmorillonite on the Nonisothermal Crystallization Behavior of the Poly(trimethylene terephthalate)/Polypropylene/Montmorillonite Nanocomposites

Organic montmorillonite (MMT) reinforced poly(trimethylene terephthalate) (PTT)/ polypropylene (PP) nanocomposites were prepared by melt blending. The effects of MMT on the nonisothermal crystallization of the matrix polymers were investigated using differential scanning colorimetry (DSC) and analyzed by the Avrami equation. The DSC results indicated that the effects of MMT on the crystallization processes of the two polymers exhibited great disparity. The PTT's crystallization was accelerated significantly by MMT no matter whether PTT was the continuous phase or not, but the thermal nucleation mode and three-dimensional growth mechanism remained unchanged. However, in the presence of MMT, the PP's crystallization was slightly retarded with PP as the dispersed phase, and was influenced little with PTT as the dispersed phase. When the MMT content was increased from 2_wt% to 7_wt%, the crystallization of the PTT phase was slightly accelerated, whereas the crystallization of the PP phase was severely retarded, especially at lower temperatures. Moreover, the nucleation mechanism for the PP's crystallization changed from a thermal mode to an athermal one. In the polypropylene-graft-maleic anhydride (PP-g-MAH) compatibilized PTT/PP blends, with the addition of 2_wt% MMT during melt blending, the T _c (PTT) shifted 7.8°C to lower temperature and had a broadened exotherm, whereas the T _c (PP) shifted 17.1°C to higher temperature, with a narrowed exotherm. TEM analysis confirmed that part of the PP-g-MAH was combined with MMT during blending.