变量分离法与变系数非线性薛定谔方程的求解探索

把变量分离法应用于(1+1) 维非线性物理模型，构建了色散缓变光纤变系数非线性薛定谔方程的一类新的孤子解.作为特例，也得到了常系数非线性薛定谔方程的包络型孤子解，只是解的形式有点变化. 关键词： 变量分离法 变系数 薛定谔方程 孤子解     

用推广的李群约化法求解非线性薛定谔方程

用推广的经典李群约化法，得到了色散系数、非线性系数、补偿（或损失）系数为时、空变量函数时的非线性薛定谔方程的精确解.深入研究了非线性薛定谔模型的一般孤波解与线性调频孤波解在光纤通讯与光纤放大器中的潜在应用. 关键词： 李群约化 非线性薛定谔方程 光纤通讯     

二维梯度折射率光波导中线光畸形波的传播控制

非均匀非线性波导中光脉冲的传播由(2+1)维变系数非线性薛定谔方程描述。采用相似变换方法求解了(2+1)维变系数非线性薛定谔方程的精确畸形波解,并讨论了带有外势项的非线性薛定谔方程控制的线光畸形波在波导放大器中的传播问题。给出了操控线光学畸形波解传播的控制条件,发现线光畸形波的特性,如振幅和位置等,在非线性光学介质中是可以控制的。在可控参数条件下,讨论了可控光畸形波在非线性介质中的传播行为,包括延迟激发、抑制和保持。研究结果在理论和实际应用上都具有重要意义。     

深海内波非线性薛定谔方程的研究

考虑以跃层为界的两层分层流体,在弱非线性条件下,从分层流体的动力学基本方程组出发,应用多重尺度方法推导出描述深海内波的非线性薛定谔方程,分析方程中频散和非线性系数,求出非线性薛定谔方程的孤子解,并通过数值实验验证了理论的正确性.     

微扰的耦合非线性薛定谔方程的近似求解

将直接微扰方法应用于可积的含修正项的非线性薛定谔方程，通过近似解与精确解的比较确定了直接微扰方法的可靠性.继而，将该方法应用于微扰的耦合非线性薛定谔方程，并获得了该微扰方程的可靠的近似解. 关键词： 直接微扰方法 微扰 耦合非线性薛定谔方程 近似解     

非局域非线性介质中光束传输的拉盖尔-高斯变分解

光束在非局域非线性介质中的传输过程由非局域非线性薛定谔方程描述.1+2D非局域非线性薛定谔方程可以转化为圆柱坐标系下的变分问题.通过展开介质响应函数并合理假设试探解求解变分方程,得到光束在强非局域非线性介质中的拉盖尔-高斯解.满足一定条件时,拉盖尔-高斯光束将形成光孤子或退化为高斯光束. 关键词： 非局域非线性介质 强非局域性 变分法 拉盖尔-高斯光束     

改进的tanh函数方法与广义变系数KdV和MKdV方程新的精确解

利用改进的tanh函数方法将广义变系数KdV方程和MKdV方程化为一阶变系数非线性常微分方 程组-通过求解这个变系数非线性常微分方程组，获得了广义变系数KdV方程和MKdV方程新的 精确类孤子解、有理形式函数解和三角函数解- 关键词： 改进的tanh函数方法 类孤子解 有理形式函数解 三角函数解     

光纤中变系数非线性Schrdinger方程的孤子解及其应用

基于推广的立方非线性Klein_Gordon方程对一般形式的变系数非线性Schrdinger方程进行研究,讨论了无啁啾情形的孤子解,发现了包括亮、暗孤子解和类孤子解在内的一些新的精确解.同时对基本孤子的色散控制方法进行了简单讨论.作为特例,常系数非线性Schrdinger方程和两类特殊的变系数非线性Schrdinger方程的结果和已知的形式一致.此外,还研究了一个周期增益或损耗的光纤系统,得到了有意义的结果.     

非线性薛定谔方程的孤波解

通过行波变换把非线性薛定谔方程化为常微分方程,并利用黎卡提投影方程映射法得到了非线性薛定谔方程的孤波解.     

立方五次方非线性薛定谔方程的动力学及模式漂移（英文）

利用辛算法研究立方五次方非线性薛定谔方程的动力学,讨论随着五次方系数的增大方程的动力学性质.在相图中计算得到同宿轨交叉和椭圆轨道,系统具有周期解.讨论方程的解模式的漂移,结果表明解模式的漂移速度随着五次方系数的增大而减慢.     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.