ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

反应等离子体中尘埃空洞形成的实验研究

利用气体合成（乙烯和硅烷，氩气是载气）的方法，产生尘埃粒子，并在此基础上研究了悬 浮在射频等离子体鞘层上方的尘埃云及尘埃空洞.实验结果给出了尘埃云和尘埃空洞与射频 功率和气压等参数的关系曲线. 关键词： 尘埃等离子体 尘埃空洞 尘埃云     

采用发射光谱和朗缪尔探针诊断低温低压氢等离子体

 使用发射光谱诊断法和Langmuir探针诊断法,测量了螺旋波激发等离子体化学气相沉积装置中产生的氢等离子体的发射光谱和电流-电压曲线。运用日冕模型和Druyvestey方法,对不同放电参数条件下激发态氢原子密度﹑等离子体密度及电子能量分布的变化规律进行了研究。结果表明：激发态氢原子密度随射频功率增大而增大,随工作气压的增大先增大,后缓慢下降。等离子体密度随射频功率增大线性增大,随工作气压的增加也是先增大,出现峰值后缓慢下降。电子平均能量随射频功率的变化是先增大,后达到平衡;随着工作气压的增大逐渐减小。两种诊断方法得到的结果基本相符。在低温低压等离子诊断中,两种诊断方法结合使用,可以得到更准确和更多的等离子体信息。     

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用Langmuir探针对射频(13.56 MHz)感应等离子体进行了诊断,给出了Ar等离子体轴向和径向参数随气压的变化。采用发射光谱测量了等离子体中氩原子的750.3nm谱线强度随气压在轴向的变化,其变化趋势与Langmuir探针测量结果的变化趋势相一致。测量了氩离子的434.8nm谱线强度随气压在轴向的变化并获得了氩离子的434.8nm谱线强度与氩原子的430.0nm谱线强度的比值在轴向三个不同位置的变化。从测得的结果可知:在放电室中上部形成了均匀稳定的高密度等离子体,在靶附近有所降低,在中部以下等离子体密度逐渐变低;在径向6~7 cm以内的区域等离子体参数变化不大,形成了均匀稳定的等离子体,等离子体参数在器壁处变化明显。     

使用发射光谱对感应耦合CF4/CH4等离子体中C2基团形成机理的研究

利用强度标定的发射光谱法，研究了感应耦合CF4₄/CH4₄等离 子体中空间基团的 相对密度随宏观条件（射频输入功率、气压和流量比）的变化情况. 研究表明：在所研究的 碳氟/碳氢混合气体放电等离子体中除了具有丰富的CF，CF2₂，CH，H和F等活 性基团外 ，还同时存在着C2₂基团，其相对密度随着放电功率的提高而增加；随着气压 的上升呈 现倒“U”型的变化. C2₂随流量比R（R=［CH4 _{关键词： 发射光谱 感应耦合等离子体 2}基团')" href="#">C2₂基团     

远程Ar等离子的发射光谱研究

远程等离子体可以有效避免电子与离子碰撞产生的刻蚀作用,加强自由基反应,取得更好的改性效果,在膜材料领域具有重要的应用价值。为了更加深入研究远程等离子体中电子状态及其变化规律,采用发射光谱法对远程Ar等离子体进行了诊断,研究了射频功率、反应腔室内压强、距放电中心距离对远程Ar等离子体发射光谱强度、电子密度和电子温度的影响。结果表明,在690～890 nm区域中特征峰较为集中,由ArⅠ原子谱线占主导,且谱线强度的变化规律和电子密度的变化规律相同。通过玻尔兹曼斜率法选取3条ArⅠ谱线计算了不同放电参数下的电子温度。电子温度随射频功率、反应腔室内压强、距放电中心距离的改变而改变。射频功率从30 W增加到150 W时,电子温度从3 105.39 K降低至2 552.91 K。压强从15 Pa增加到25 Pa时,电子温度从3 066.53 K降低到2 593.32 K,当压强继续增加到35 Pa时,电子温度则增加至2 661.71 K。在距放电中心0～10 cm处由于等离子体电位增大,电子温度上升,而10 cm后电子温度不断下降在距放电中心80 cm处趋于0 K。通过分析ArⅠ696.894谱线的...     

射频功率对辉光放电H2/C4H8等离子状态的影响

采用辉光放电技术和等离子体质谱诊断技术,研究了H₂/C₄H₈混合气体等离子体中正离子成分及主要正离子能量随射频功率的变化规律,并分析了H₂/C₄H₈混合气体主要的离解机理和形成过程.研究表明:随着射频功率的增加,碳氢碎片离子的浓度增加,在20 W时达到最大值,25 W后有所减小.当射频功率小于10 W时,H₂/C₄H₈混合气体等离子体中C₄H₉⁺相对浓度最大,当功率大于或等于10 W时,C₃H₃⁺相对浓度最大.随着射频功率的增大,碳氢碎片离子的能量逐渐增加.对H₂/C₄H₈混合气体等离子体的组成与能量进行的定性分析,将为H₂/C₄H₈混合气体辉光放电聚合物涂层工艺参数优化提供参考.     

CH4/H2和CH4/He体系等离子体发射光谱分析

 在CH₄/H₂和CH₄/He和CH₄/He两种系统中,利用光学发射谱技术对螺旋波放电产生低压甲烷等离子体内活性粒子的光学发射特征进行了原位诊断。在实验中,两种体系下同时都测得的主要荷电粒子为CH,Ha,Hb,Hg以及H2等。研究了各实验参数对这些活性粒子CH, Ha,Hb以及Hg的发射光谱强度的影响。结果表明：在CH₄/H₂体系下,随着射频功率的增大,Ha,Hb,Hg以及CH基团的相对强度都随着增加,而当放电气压变化时它们都呈现先增大而后减小的趋势。在CH₄/He体系下,随射频功率的增加,Ha,Hb,Hg以及CH相对强度变化的总体趋势也都是先增加而后减小,当工作气压增加时,Ha,Hb以及Hg的相对强度变化也是呈现先增大而后减小,但CH基团的相对强度却是逐渐减小的;这些结果为等离子体沉积各种薄膜过程的理解及制备工艺参数的调整提供了参考。     

大气压He-Ar射频容性放电Ar亚稳态粒子数密度

利用发射光谱法测量大气压He-Ar混合气体射频容性放电中的Ar亚稳态1s5(3s23p54s［3/2］2)粒子数密度。在不同的放电功率和气体组分下测量放电等离子体中的重要参数:气体转动温度、电子激发温度和Ar亚稳态1s5粒子数密度。结果表明:气体温度在不同放电功率及Ar气压在5103 Pa以内时变化不大,范围为300~350 K;电子激发温度随着放电功率的增加而增加,并且在Ar气压为4103 Pa时最大,在放电功率为70 W时达到0.58 eV;1s5粒子数密度随着放电功率以及电子激发温度的增加而增加,在放电功率为70 W、Ar气压为4103 Pa时达到1.53109 cm-3。     

等离子体发射光谱诊断用于射频磁控溅射GaP薄膜的工艺参数优化

以GaP为靶材、Ar为工作气体,采用射频磁控溅射法制备了厚层GaP膜.对沉积过程中的辉光放电等离子体进行了发射光谱诊断,发现只有ArⅠ发射谱线.研究了工艺参数对发射谱线强度的影响规律,并在此基础上通过同时改变射频功率、Ar气流量及工作气压,使ArⅠ发射谱线强度保持相同.发现通过增大射频功率、减小工作气压而保持ArⅠ发射谱线强度不变可以提高GaP膜的沉积速率,并使GaP膜的沉积工艺参数得到优化.在优化后的工艺参数下制备出了符合化学计量比、红外透过性能好的厚层GaP膜. 关键词： GaP薄膜 射频磁控溅射 等离子体发射光谱 红外透射     

激光诱发SiH4＋CH4等离子体的发射光谱

本工作采用光学发射谱方法测量了ＴＥＡ ＣＯ２脉冲激光辐射ＳｉＨ４＋ＣＨ４系统产生的等离子体反应过程中的发射谱特性，探测到了Ｓｉ，Ｓｉ＾＋，Ｓｉ＾２＋，Ｃ，Ｃ＾＋，Ｃ＾２＋，ＣＨ，ＳｉＨ，ＳｉＨ＾＋，Ｓｉ２和Ｈ的特征辐射，研究了含Ｃ，Ｓｉ碎片粒子光谱随实验条件的变化规律，并讨论了反应条件对ＯＥＳ的影响。     

VHF等离子体光发射谱(OES)的在线监测

采用光发射谱(OES)测量技术，对不同制备条件下的甚高频(VHF)等离子体辉光进行了在线监 测.实验表明，VHF等离子体中特征发光峰(Si，SiH,H_α,H^*_β 等)的强度较常规的射 频(RF)等离子体明显增强，并且在制备μc-Si：H的工艺条件下(H稀释度R(H₂/S iH₄)=23 )，随激发频率的增加而增大，这些发光峰的变化趋势与材料沉积速率的变化规律较相似.Si H峰等的强度随气压的变化则因硅烷H稀释度及功率的不同而异：高H稀释(R=23)时，SiH峰强 度在低辉光功率下随反应气压的增大单调下降，在高辉光功率下随气压的变化呈现类高斯规 律；低H稀释(R=5．7)时， SiH峰随气压的变化基本上是单调下降的，下降速率也与功率有 关，这些结果表明，VHF-PECVD制备μc-Si：H和a-Si：H的反应动力学过程存在较大差异.此 外，随着激发功率的增大，Si，SiH峰都先迅速增大然后趋于饱和，并且随着H稀释率的增大 ，将更快呈现饱和现象.通过对OES结果的分析与讨论可知，VHF-PECVD技术沉积硅基薄膜可 以有效提高沉积速率，而且，硅基薄膜的沉积速率的进一步提高需要综合考虑H稀释度、气 压和功率等的匹配与优化. 关键词： 甚高频等离子体化学气相沉积 氢化硅薄膜 光发射谱     

Experimental study on parameters of dust plasma in SiH4/C2H4/Ar discharges

Measurements of dust plasma parameters were carried out in the discharges of （SiH4/C2H4/Ar） mixtures. Dust particles were formed in the capacitively coupled radio-frequency discharge of these reactive mixtures in a cylindrical chamber. Langmuir probe was employed for diagnosing and measuring the important plasma parameters such as electron density and electron temperature. The results showed that the electron density dropped, and in contrast the electron temperature rose when the dust particles formed. The curves of the electron density and temperature versus the RF power and pressure were presented and analysed. Further, it was found that the wriations of electron temperature and the size of dust void with the RF power followed the similar trends. These trends might be useful for understanding more about the characteristics of dusty voids.     

A Report on H mode in Magnetic Pole Enhanced Inductively Coupled Nitrogen Plasmas

The properties of low pressure magnetic pole enhanced, inductively coupled nitrogen plasma were studied by using electrical probe (Langmuir probe) under the conditions of RF powers in the range of 50‐220 W and pressures of 15‐75 mTorr. The electron energy probability function (EEPF) and electron density (n_e) obtained from the RF compensated Langmuir probe was compared with the theoretical results. The theoretical fits of the EEPF shows that the shapes of EEPF are evolved from generalised distribution to Maxwellian distribution function. It was also observed that at a low power (50 W) the discharge remains in inductive (H‐mode) mode for all the pressures (15‐75 mTorr). At a higher pressure and relatively low RF power, the measured EEPF show a hole near 3eV of energy. The intensities of the emission lines at 337.1nm (Second Positive System) and 391.4 nm (First Negative System) due to C³Π_u → B³Π_g and B²$\textstyle \sum_u^+$ → X² $\textstyle \sum_g^+$ transitions respectively, closely follows the variation of n_e with RF power and filling gas pressure. The stability of the H mode was also investigated using skin depth. Electron temperature and plasma potential indicate that the discharge at higher power (above 50 W) almost remain in H mode. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges

H atom densities are measured by threshold ionization mass spectrometry in a H₂ parallel-plate RF discharge. Variations of H density near the surface in steady-state discharge conditions reveal different surface loss probabilities γ on stainless steel, hydrogenated amorphous silicon (a-Si:H) and oxidized silicon. Absolute γ values are obtained from time-resolved H density measurements in afterglow. The etching probability of Si per H atom incident on a-Si:H is also derived by monitoring SiH₄ partial pressure and SiH(A²Δ) optical emission.     

A study of methods for moving particles in RF processing plasmas

Methods for moving charged particles in RF processing plasmas are investigated. These methods include varying RF power, varying chamber pressure, attraction and repulsion by an electrostatic probe, and movement with magnetic fields. Varying RF power changes the depth of the potential wells where particles are trapped. The RF power affects shape and location of the traps and the bulk plasma potential. Increasing the chamber pressure moves the sheath edge closer to the wafer being processed. Since particle traps are found at the plasma sheath edge increasing the chamber pressure will move the particle traps (and any trapped particles) closer to the wafer being processed. The Langmuir probe can repel particles when under negative bias and attract them when positively biased. This probe can also distort the sheath edge when the tip resides within the sheath. Applying a magnetic field can change the characteristics of the particle traps and produce a force on the charged dust particles     

介质阻挡放电等离子体沉积多孔硅纳米颗粒膜的光发射及红外光谱

用介质阻挡放电(DBD)等离子体增强化学气相沉积(PECVD)的方法,以硅烷为源气体,在沉积区域加载脉冲负偏压进行调节,在玻璃基片上沉积得到具有荧光特征的多孔硅纳米颗粒膜。沉积过程的发射光谱结果表明,在412 nm处出现S iH*(A2Δ→X2Π0-0)特征峰,证明放电沉积过程中存在不同程度的硅烷裂解。将脉冲负偏压固定在-300 V,当占空比从0.162增大到0.864时,薄膜的红外光谱显示S i—O—S i在1 070cm-1伸缩振动吸收峰与800 cm-1的弯曲振动峰都有所增强,而930 cm-1的S i—H弯曲振动减弱。说明随着占空比的增加,S i—O—S i键的结合越来越明显。     

Measurement of electronegativity during the E to H mode transition in a radio frequency inductively coupled Ar/O_2 plasma

This paper presents the evolution of the electronegativity with the applied power during the E to H mode transition in a radio frequency(rf)inductively coupled plasma(ICP)in a mixture of Ar and O2.The densities of the negative ion and the electron,as well as their ratio,i.e.,the electronegativity,are measured as a function of the applied power by laser photo-detachment combined with a microwave resonance probe,under different pressures and O2 contents.Meanwhile,the optical emission intensities at Ar 750.4 nm and O 844.6 nm are monitored via a spectrograph.It was found that by increasing the applied power,the electron density and the optical emission intensity show a similar trench,i.e.,they increase abruptly at a threshold power,suggesting that the E to H mode transition occurs.With the increase of the pressure,the negative ion density presents opposite trends in the E-mode and the H-mode,which is related to the difference of the electron density and energy for the two modes.The emission intensities of Ar 750.4 nm and O 844.6 nm monotonously decrease with increasing the pressure or the O2 content,indicating that the density of high-energy electrons,which can excite atoms,is monotonically decreased.This leads to an increase of the negative ion density in the H-mode with increasing the pressure.Besides,as the applied power is increased,the electronegativity shows an abrupt drop during the E-to H-mode transition.     

Mode transition in magnetic pole enhanced inductively coupled argon plasmas

The electrical probe (Langmuir probe) diagnostics of different plasma parameters and operation regimes (E/H modes) of magnetic pole enhanced, inductively coupled (MaPE-ICP) argon plasmas are investigated. It is shown that uniform, high density (n _e ∼ 10¹² cm^-3) and low electron temperature (T _e ∼ 1.5 eV) plasma can be produced in low pressure argon discharges at a low power (100 W). It is found that an MaPE-ICP reactor operates in two different modes; capacitive (E mode) and inductive (H mode). No density jump or hysteresis are reported between these modes. The effect of pressure on transition power, where the mode changes from E to H mode at 20 sccm gas flow rate are studied and it is found that for all pressures tested (∼7.5 mTorr to 75 mTorr) the transition power remains same. In the inductive mode, the above plasma parameters show a smooth variation with increasing filling gas pressure at fixed power. The intensity of the emission line at 750.4 nm due to 2p ₁ → 1s ₂ (Paschen’s notation) transition, closely follows the variation of n _e with RF power and filling gas pressure. Measured electron energy probability function (EEPF) shows that electron occupation mostly changes in the high-energy tail, which enlightens close similarity of the 750.4 nm argon line to electron number density (n _e ). The behaviour of the electron energy probability function (EEPF) with regard to pressure and RF power in two operational modes is presented.     

Diagnosis of a low pressure capacitively coupled argon plasma by using a simple collisional-radiative model

This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe measurements. Two major processes are considered in this model, electron-impact excitation and the spontaneous radiative decay. The diffusion loss term, which is found to be important for the two metastable states (4s[3/2]₂, 4s'[1/2]₀), is also taken into account. Behaviours of representative metastable and radiative states are discussed. Two emission lines (located at 696.5 nm and 750.4 nm) are selected and intensities are measured to obtain populated densities of the corresponding radiative states in the argon plasma. The calculated results agree well with that measured by Langmuir probe, indicating that the current model combined with optical emission spectroscopy is a candidate tool for electron density and temperature measurement in radio frequency capacitively coupled discharges.