Raman scattering of polycrystalline GaSb thin films grownby co-evapouration process

<正>This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates.The GaSb thin film structural properties are characterized by Raman spectroscopy.The Sb-A_1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature,which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease.In Raman spectra,the transverse optical（TO） mode intensity is stronger than that of the longitudinal optical（LO） mode,which indicates that all the samples are disordered.The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film.A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed.The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa.The uniaxial stress decreases with increasing substrate temperature.These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.     

Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties

The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E₁(TO) and E₂ modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films.     

Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy

The transverse (TO) and longitudinal (LO) optical phonons in AlAs, GaP, GaAs, InP, InAs and InSb have been measured at room temperature by infrared spectroscopy using an oblique incidence reflectance method. The spectra obtained were then fitted using a novel approach to determine the TO and LO phonon frequencies and damping. The results obtained are found to be more precise than in earlier reflectivity measurements using near-normal angles of incidence and provide information on the damping of both phonons. Apart from the GaAs LO mode, the observed damping parameters are found to be quite different from those predicted by theory. From these results the Lowndes condition governing the relative magnitudes of the TO and LO phonon line widths is found to be violated for all these zincblende semiconductors.     

Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol–gel method

Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol–gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were α=4×10^?3 eV/K and β=4.9×10³ K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission.     

Raman scattering from surface optical phonon mode in gallium phosphide nanomaterials

The Raman scattering from gallium phosphide (GaP) nanoparticles (~53 nm) and nanosolids has been investigated. By means of Lorentzian fitting of the Raman scattering spectra, a surface optical phonon (SO) peak located between the transverse optical (TO) phonon and longitudinal optical (LO) phonon frequencies became observable. It has been proved by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) that a core-shell heterostructure is characteristic of the structure of GaP nanoparticles. According to electromagnetic theory, the SO frequency of the piezoelectric/semiconductor heterostructural nanomaterials was calculated.     

Infrared active phonon modes and ionicity of single crystal MgAl2O4

Near-normal incident infrared reflectivity spectra of （100） MgAl2O4 spinel single crystal have been measured at different temperatures in the frequency region between 50 and 6000 cm^-1. Eight infrared-active phonon modes are identified, which are fitted with the factorized form of the dielectric function. The dielectric property and optical conductivity of the MgAl2O4 crystal are analysed. From TO/LO splitting, the effective Szigeti charges and Born effective charges at different temperatures are calculated for studying the ionicity and the effect of polarization. Based on the relationship between the （LO-TO）1 splitting, which represents the transverse and longitudinal frequencies splitting of the highest energy phonon band in the reflectivity spectrum, and the ionic-covalent parameter, the four main phonon modes are assigned. MgA1204 can be considered as a pure ionic crystal and its optical characters do not change with decreasing temperature, so it may be used as a suitable substrate for high-Tc superconducting thin films.     

Small band gap and high ionic conduction in Cu2S

Far-infrared reflectivity spectra of Cu₂S have been measured from 20 to 700 cm⁻¹ at several temperatures through the superionic transition temperature T_c. Many bands and two broad bands were observed at low and high temperatures, respectively. From the spectra, we determined optical dielectric constant _∞, the angular frequencies of longitudinal (LO) and transverse (TO) optical phonons, and transverse effective charge. Based on these values, we suggest significant role of small band gap for high ionic conduction with small activation energy and the possibility of lattice distortion arising from an enhanced effective charge. Anomalous temperature dependence has been found for _∞ and TO–LO splitting.     

Phase transitions in barium–strontium titanate films on MgO substrates with various orientations

A comparative study of the lattice dynamic upon phase transitions in a polycrystalline Ba_0.8Sr_0.2TiO₃ (BST) film on a Pt substrate and in epitaxial BST films grown on various sections of an MgO substrate has been performed by Raman spectroscopy. It has been found that different sequences of phase transitions take place in these films. The BST/Pt films demonstrate the same sequence of phase transitions that is observed in the bulk ceramics. The hardening of a soft mode in BST/(001)MgO and BST/Pt films shows that the transition from the tetragonal ferroelectric phase to the paraelectric phase has features of the displacement-type phase transition and also the order–disorder phase transition. When approaching the ferroelectric transition temperature, the soft mode in the BST/(111)MgO film is softened, following the Cockran law, which indicates the displacement-type phase transition.     

Raman scattering in hydrogenated amorphous silicon under high pressure

The first studies on the pressure dependences of the first-order Raman spectra in plasma-deposited a-Si:H films are reported. With increasing pressure up to 25 kbar the TO optical phonon band shows a shift in peak to higher frequencies with a sharpening of width while the TA acoustic phonon band shows a shift in peak to lower frequencies with a broadening of width. The LO optical phonon band shows a shift in peak to higher frequencies whereas the LA acoustic phonon band remains unchanged. These pressure effects are discussed with changes in force constant and structural disorder. The alloying effect of H atoms on the Raman spectra is also discussed while comparing the pressure effects.     

Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

Large-area, 1-μm-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N₂-BF₃-H₂ gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp³-configuration was improved to over 85% at a reduced substrate bias voltage of -40 V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions. Received: 3 May 2002 / Accepted: 7 May 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +852-2788/7830, E-mail: apwjzh@cityu.edu.hk     

Resonant Raman scattering from screened longitudinal optical phonons in EuTe

Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying ‘effective’ carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements.     

Manifestation of the composition inhomogeneity of Zn1 − x Mg x Te quantum wires in Raman spectra

The resonant Raman spectra of Zn_{1 − x} Mg _x Te quantum wires have been investigated. The dependences of the frequencies of longitudinal optical phonons of the ZnTe-like and MgTe-like modes (LO1 and LO2) on the photon energy have been found. The character of these dependences correlates with the variation in the frequencies of optical phonons of the Zn_{1 − x} Mg _x Te alloys on the composition (x). This gives grounds to assume that the quantum wires are inhomogeneous in the composition. This assumption is also confirmed by the fact that the intensity ratio of the LO2 and LO1 modes in the Raman spectra increases with increasing excitation energy.     

不同晶向SrTiO3上外延GaAs薄膜的光谱研究

利用MBE生长技术,成功地在不同晶向SrTiO3(100)(111)(110)衬底上生长了GaAs薄膜,利用显微Raman和荧光光谱（PL）对此进行了研究。实验结果表明,在不同晶向SrTiO3上生长的GaAs薄膜有不同的晶向和应力状态。荧光光谱（PL）研究表明在SrTiO3(100)(111)晶面上生长的GaAs薄膜的PL峰发生明显的蓝移。研究表明在SrTiO3(110)面上生长的GaAs薄膜和体单晶基本上一致,有更好的光学质量。     

旋光性单轴晶体的喇曼光谱中TO和LO模的识别

本文提出一种简便识别旋光性单轴晶体喇曼光谱中横模和纵模的方法。应用90°散射几何配置x(z+Δy,xz)y,散射光的偏振方向与x轴成δ夹角。应用Loudon给出的单轴晶体极性声子的喇曼散射效率公式,计算TO和LO模的散射效率,它们依赖于喇曼张量元和δ角,其极大值分别位于δ_max^TO和δ_max^LO处,这两个角度的符号正好相反。因此,由判定δ_max的符号,可以将TO和LO模区分开来,并且从|δ_max|值可以了解喇曼张量的各向异性。 关键词：     

Hyper‐Raman and Raman scattering in paratellurite TeO2

Raman spectra of the tetragonal structure of paratellurite TeO₂ have been revisited avoiding anomalous polarization‐selection‐rules violations previously observed and due to optical activity. We present a complementary hyper‐Raman scattering study of paratellurite. Wavenumber and symmetry assignments are given for all expected 21 Raman active optical branches, except one LO component (out of the eight expected TO–LO pairs) of the polar doublet E modes. Also, the four expected hyper‐Raman active A₂ (TO) modes have been observed. Moreover, we have observed a strong Kleinman‐disallowed hyper‐Rayleigh signal, which is tentatively assigned as a first evidence of hyper‐Rayleigh optical activity. Copyright © 2013 John Wiley & Sons, Ltd.     

Effects of thickness on the infrared optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films

Using infrared spectroscopic ellipsometry (IRSE), the optical properties of the Ba_0.9Sr_0.1TiO₃ (BST) ferroelectric thin films with different film thicknesses on Pt/Ti/SiO₂/Si substrates prepared by a modified sol-gel method have been investigated in the 2.5–12.6 m wavelength range. By fitting the measured ellipsometric parameter ( and ) data with a three-phase model (Air/BST/Pt) and the classical dispersion relation for the BST thin films, the optical constants and thicknesses of the thin films have been obtained. The average thickness of the single layer decreases with increasing film thickness. The refractive index of the BST films decreases with increasing thickness in the wavelength range 2.5–11 m, and increases with increasing thickness in the wavelength range 11–12.6 m. However, the extinction coefficient of the BST films monotonously decreases with increasing thickness. It is closely associated with the crystallinity of the thin films, the crystalline size effect and the influence of the interface layer. The absorption coefficient of the BST films with different thicknesses decreases with increasing thickness. PACS 77.55.+f; 78.20.Ci; 78.30.Am; 81.70.Fy; 81.40.Tv     

Nonlinear optical absorption and refraction of epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO substrates

Highly epitaxial Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric thin films were fabricated on (001) MgOsubstrates by pulsed laser deposition. The nonlinear optical absorption coefficients (β) and refraction indices (γ) of the BST thin films on (001) MgO substrates were investigated using the single beam Z-scan technique with femtosecond laser pulses at the wavelengths of 790 nm and 395 nm, respectively, at room temperature. The nonlinear absorption coefficients of BST thin films were measured to be ∼0.087 cm/GW and ∼0.77 cm/GW at 790 nm and 395 nm, respectively. The nonlinear refraction indices of BST thin films exhibit a strong dispersion from a positive value of 6.1×10^-5 cm²/GW at 790 nm to a negative value of -4.0×10^-5 cm²/GW at 395 nm near band gap. The dispersion of γ is roughly consistent with Sheik-Bahae’s theory for the bound electronic nonlinear refraction resulting from the two-photon resonance. These results show that the BST film is a promising material as a candidate for nonlinear optical applications. PACS 42.70.Mp; 78.20.-e; 81.05.-t     

The preparation and refractive index of BST thin films

Radio-frequency magnetron sputtering technique is used to deposit Ba_0.65Sr_0.35TiO₃ (BST) thin films on fused quartz substrates. In order to prepare the high-quality BST thin films, the crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). More intense characteristic diffraction peaks and better crystallization can be observed in BST thin films deposited at 600 °C and subsequently annealed at 700 °C. The refractive index of the films is determined from the measured transmission spectra. The dependences of the refractive index on the deposition parameters of BST thin films are different. The refractive index of the films increases with the substrate temperature. At lower sputtering pressure, the refractive index increases from 1.797 to 2.197 with pressure increase. However, when the pressure increases up to 3.9 Pa, the refractive index reduces to 1.86. The oxygen to argon ratio also plays an important effect on the refractive index of the films. It has been found that the refractive index increases with increase in the ratio of oxygen to argon. The refractive index of BST thin films is strongly dependent on the annealing temperature, which also increases as the annealing temperature ascends. In a word, the refractive index of BST thin films is finally affected by the films’ microstructure and texture.     

Large blue shift in the optical band-gap of sol-gel derived Ba0.5Sr0.5TiO3 thin films

In this paper, we report and analyze the large blue shift in the optical band-gap of sol-gel derived Ba_0.5Sr_0.5TiO₃ (BST) thin films. BST films of different thickness (150 nm, 320 nm and 480 nm respectively) were deposited layer by layer onto fused quartz substrates by a spin coating technique. The drying temperature for individual layers (pre-sintering temperature) was varied as 400, 500 and 600 ^°C. A large blue shift in the band-gap was observed (with a value 4.70 eV compared to the bulk value of 3.60 eV) for films pre-sintered at 400 ^°C, which decreased with increase in the pre-sintering temperature. To date such blue shifts have been attributed to grain size reduction, stress and the amorphous nature of the films. Here, the blue shift has been correlated with the presence of charge carriers generated by oxygen vacancies and explained on the basis of the Burstein-Moss effect.     

Pressure dependence of zone-boundary phonons in AlSb

Abstract

We have investigated the effect of hydrostatic pressure on zone-boundary and other critical-point phonon frequencies of AlSb by second-order Raman scattering. A softening of the TA(X), TA(L) and (L/T)A([Sgrave]) modes has been observed for pressures up to the first phase transition at 7.7 GPa. The LA(L) as well as the optical TO at X-, L-, and LO at [Sgrave]-, X-points harden with increasing pressure. Mode Griineisen parameters of all the resolved modes were calculated. Reflectivity measurements indicate that the high pressure phase above 7.7 GPa is metallic.