获得多孔硅蓝绿光发射的新方法

对多孔硅进行“胺液浸泡＋快速热氧化”处理,光致发光谱显示,经处理样品的发光峰值波长短到５００ｎｍ,而且在干燥空气中存放１６０ｄ后,发光强度变化很小．红外吸收谱表明,处理后的多孔硅的主要成分是硅和氧,胺液没有在发蓝绿光的样品中留下残迹．电子自旋共振谱表明,这种蓝绿光样品有相当低的悬挂键密度．这些结果揭示,量子限制效应和表面态在多孔硅蓝绿光发射中起着关键性的作用．这种制备发蓝绿光样品的方法简单易行,成功率可达７０％．     

多孔硅中的蓝色发光谱带

采用YAG:Nd激光器的1.06μm谱线的三倍频355nm激光激发多孔硅样品时,观测到一个峰值位于465nm的发光谱带,通过样品的发光光谱、透射光谱、以及时间分辨光谱的测量,初步探讨了新谱带的起源.     

多孔硅的光致发光机制

人们已经提出了许多解释多孔硅发光的理论模型,每个模型都可以针对某些实验现象做出合理的解释,而对其他的实验结果就可能无法解释甚至相悖,因此多孔硅的发光机制至今仍是需要进一步研究和解决的问题。通过改变阳极氧化的条件,制得了一系列样品,其光致发光谱主要有四个峰。随着制备条件的改变,各个峰位的变化不大,但峰值强度比的变化比较大。随着自然氧化时间的延长,各个峰位的变化很小,有红移也有蓝移,有的则基本不变;而峰值强度的减弱幅度较大,但对应于各个峰位幅度的减弱是均衡的。分析实验现象产生的原因,认为多孔硅的发光是多种发光机制共同作用的结果;多孔硅纳米量子线的一定尺寸分布,不仅使光致发光谱存在一定的带宽,而且也是产生多峰现象的原因之一;多孔硅的结构特征对其发光特性起着决定性的作用。     

离子注入对多孔硅可见光发射特性的影响

本文在前期对多孔硅发光机理研究的基础上,研究了离子注入对多孔硅光致发光的影响.实验表明离子注入除了可以降低多孔硅光致发光的强度外,还将使多孔硅的光致发光光谱谱峰产生蓝移、半高宽展宽,并在多孔硅发光谱带中产生一些发光减弱区和次峰结构.文中最后对实验现象做了解释.     

多孔硅的拉曼光谱研究

本文研究了多孔硅的拉曼光谱随激发激光功率的变化 ,发现当激发光的功率较低时 ,多孔硅的拉曼光谱在 5 2 0cm- 1附近为一单峰。随着激光功率的增加 ,该单峰向低波数移动且半高宽增大 ,当继续增大激光功率时 ,该单峰分裂为双峰 ,位于低波数一侧的拉曼峰随着激光功率的增大而进一步向低波数移动。多孔硅的拉曼光谱随着激光功率的变化是一个可逆的过程。这一结果表明 ,低波数拉曼峰的位置既不能作为多孔硅颗粒尺寸的量度 ,也不能只把低波数的拉曼峰作为多孔硅的特征。我们认为激光诱导多孔硅中LO和TO声子模的简并解除是观察到双峰的主要原因。     

镶嵌于多孔硅微腔中8-羟基喹啉铝的窄峰发射

利用浸渍法将8羟基喹啉铝(Alq₃)镶嵌到多孔硅微腔中,制备了多孔硅微腔—Alq₃镶嵌膜,研究了多孔硅微腔对镶嵌其中的Alq₃自发发射的微腔效应,观察到了光谱窄化、发光强度增强等现象。镶嵌于多孔硅微腔中的Alq₃荧光光谱的半峰全宽只有15nm,而非微腔样品,即镶嵌于普通的单层多孔硅中Alq₃荧光谱半峰全宽在85nm以上。并且有微腔时Alq₃发光强度比没有微腔时Alq₃发光强度增强一个数量级。随机改变微腔中Bragg反射镜高折射率层的几何厚度可使高反射区展宽,从而更加有效地抑制了多孔硅本身的发光模,使发光色度更纯,但由于峰值透射率减小,导致共振峰强度有所减小。多孔硅微腔有机镶嵌膜有可能成为进一步发展Alq₃在电致发光器件方面应用的一条新途径。     

提高多孔硅传感特性的一种新方法(英文)

研究了多孔硅(PS)吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。结果表明:淬灭多孔硅发光的有机溶剂分子是极性分子,有机溶剂分子的极性不同对多孔硅发光的淬灭程度也不同,且有些有机溶剂分子吸附氧化多孔硅比吸附多孔硅引起的发光淬灭具有更好的可逆性和选择性;用含有胺基的正丁胺(CH3CH2CH2CH2-NH2)作碳源,用射频辉光放电等离子系统在多孔硅表面沉积c n膜对多孔硅进行钝化处理后发现:其电致发光强度明显增强,发光峰位兰移,且在大气中存放60天后,其电致发光谱强度基本不衰减,峰位不再移动。经钝化处理的器件较未经处理的器件具有小的串联电阻Rs和低的驱动电压。这为提高多孔硅的传感特性提供了一种新方法。     

蓝光发射多孔硅RTO过程中的尺寸分离效应

对用水热腐蚀技术制备的、具有蓝光发射的多孔硅样品在快速热氧化(RTO)处理前后其光致发光谱、硅纳米颗粒的大小及尺寸分布变化进行了研究.实验发现,新鲜多孔硅样品经过RTO处理后,其光致发光谱整体蓝移并由单发光峰分裂为两个发光峰;与此对应,样品中的硅纳米颗粒在整体减小的同时出现尺寸分离现象.这一结果表明,多孔硅中的短波长发射也具有强烈的尺寸相关性. 关键词：     

多孔硅拉曼光谱的研究

采用电化学腐蚀的方法制备多孔硅。对不同实验条件下所得到的多孔硅的拉曼光谱进行了分析，确认多孔硅是具有纳米晶结构特征的材料，肯定了量子限制效应在多孔硅光致发光中的作用。     

激光促进多孔硅内表面氧化与光致发光的退化

本文对刚制备的以及分别经以下三种情况:1.样品在1大气压的氧气中经激光(Ar~+激光器的48.80nm线,功率密度为1.77W/cm~2)连续照射1小时;2.样品在1大气压的氧气中在没有激光照射的情况下保持1小时;3.样品在1.3×10~2Pa真空度下用激光连续照射1小时处理后的多孔硅在室温下进行了光致发光谱和傅里叶变换红外吸收测量,研究了处理前后光谱的变化。实验发现经第一种情况处理后光致发光峰位蓝移了约0.1eV,发光强度衰减了二十几倍,相应的其红外光谱中与氧有关的吸收峰强度大幅度增长,而经第二,三两种情况处理后它们的光致发光及红外吸收谱则无大的变化。研究表明在氧气中激光辐照能大大加速多孔硅内表面的氧化。我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移,由氧化作用产生的非辐射复合中心导致光致发光效率的下降。     

多孔硅的表面碳膜钝化

报道对多孔硅（ＰＳ）进行碳膜（ＣＦ）钝化处理的结果。红外吸收光谱表明,经钝化处理样品的表面由Ｓｉ－Ｃ、Ｓｉ－Ｎ和Ｓｉ－Ｏ键所覆盖;荧光我谱表明,经钝化处理的样品较未处理的样品发光强度提高４￣４．５倍,且发光峰位明显蓝移;存放实验显示,经钝化处理的样品发光强度稳定、发光峰位不变。这些结果表明正丁胺可以在多孔硅表面形成优良的钝化碳膜,是一种十分有效的多孔硅后处理途径。     

Efficient visible electroluminescence from porous silicon diodes with low driven voltage

By using n-butylamine as carbon resource, diamond-like carbon film (DLCF) was deposited on the p-n porous silicon (PS) surface by means of a radio-frequency glow discharge plasma system. Electroluminescent (EL) spectra show that EL intensity of the passivated PS diodes increases by 4.5 times and 30-nm blue-shift of EL peak occurs compared with the diodes without treatment and both of them are stable while the passivated diodes are exposed to the air indoor. The current-voltage (Ⅰ-Ⅴ) characteristics exhibit that the passivated diodes have a smaller series resistance and a lower onset voltage. The EL intensityvoltage (ⅠEL-Ⅴ) relations of the PS devices with different DLCF thicknesses show that only medium DLCF thickness is optimum. These experimental phenomena have been explained based on Raman spectra and IR spectra of the diamond-like carbon films and IR spectra of the passivated PS samples.     

Simulation and fabrication of THz waveguides with silicon wafer by using eye-shaped pillars as building blocks

Silicon-based photonic crystal is a promising material for terahertz (THz) waveguide due to its high refractive index contrast. In this work, we introduce eye-shaped pillars as the feature building blocks for two-dimensional (2D) photonic crystals. The simulation study shows that larger TE mode band gaps (PBGs) can be created by the arrangement of dielectric eye-shaped pillars in air. The reflective spectra demonstrate that there are complex PBGs, where the peak position and intensity can be changed by varying the parameter e. Moreover, the peak of reflective spectra exhibits an obvious blue shift with the increase of incidence angle of light. When the vacant space in the structure is filled by polystyrene (PS) microspheres of 2 μm in diameter, the peak intensity of reflective spectra reduces significantly compared with that without PS microspheres, which suggests that this design can act as a sensor in the fields of biology, agriculture or medicine.     

溶胶-凝胶法制备MgxZn1-xO薄膜的结构及光学特性

用溶胶-凝胶法制备了一系列的Mg_xZn_1-xO(0≤x≤0.3)薄膜,并用X射线衍射(XRD)和光致发光(PL)研究了不同的退火温度和Mg的掺杂含量对Mg_xZn_1-xO薄膜的结构和光学性质的影响.研究表明:Mg_xZn_1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;发现了中间热处理温度为350℃的Mg_xZn_1-xO薄膜退火温度的转折点为700℃,低于这个温度时随退火温度的升高,(002)衍射峰强度增强且掺Mg的薄膜既有紫外光又有绿光发射;800℃退火时,薄膜的(002)衍射峰强度减小,出现了(100)和(101)衍射峰,且掺Mg的薄膜只有紫外发光峰.不同的掺杂浓度对于发光也有影响,低于700℃退火时,ZnO薄膜只出现紫外发光峰,掺Mg的薄膜却出现了紫外和绿光两个发光峰.     

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.     

臭氧化法表面改性聚苯乙烯薄膜

 为增强聚苯乙烯(PS)与聚乙烯醇(PVA)之间的结合力,进而提高PS-VA双层空心微球存活率。利用臭氧化改性法在酸性介质中对聚苯乙烯薄膜进行表面改性,用红外光谱对处理后的表面进行了半定量的分析。结果表明：改性过后聚苯乙烯表面产生羟基、羰基等极性基团;接触角测试证明,处理后的表面由憎水变为亲水,并通过纳米压痕划痕法得到了处理前后PS与PVA薄膜之间的相互作用强度,臭氧化改性后PS与PVA膜间作用强度增大了40%。     

二冲程气油机燃烧混合油时着火时刻的火焰光谱分析

二冲程汽油机排气污染严重，尤其是燃烧混合油，浓混合气时有害物排放量时。着火时刻火焰光谱分析表明，ＣＨ（４３１．５ｎｍ）及Ｃ２（５１６．５ｎｍ）自由基光强峰值比较强，尤其是ＣＮ（３８７ｎｍ）自由基光强峰值比较突出。根据Ｆｅｎｉｍｏｒｅ机理可以解释排气中ＮＯｘ的生成机理。这一点也为日本Ｎａｇａｓｅ的试验所验证。     

大气中长期存放与长时间热氧化后多孔硅光致发光峰能量的会聚

改变阳极氧化的工艺条件,制备出光致发光峰能量位于1.4—2.0eV范围内的大量多孔硅样品,其中45块样品在大气中存放一年,102块样品在200℃下热氧化(累计达200小时).在上述两种情况下,光致发光峰能量在氧化后都会聚到1.70—1.75eV能量范围.假设在充分氧化的多孔硅中包裹纳米硅的氧化层中,存在发光能量处于～1.70—1.75eV的发光中心,上述实验结果可以用量子限制/发光中心模型解释. 关键词：     

Tuning the plasmon energy of palladium-hydrogen systems by varying the hydrogen concentration

First-principles calculations are performed to obtain the dielectric function and loss spectra of bulk PdH(x). Hydrogen concentrations between x = 0 and 1 are considered. The calculated spectra are dominated by a broad peak that redshifts in energy with x. The obtained bulk dielectric function is employed to compute the loss spectra of PdH(x) spherical nanoparticles as a function of x. The dominant plasmon peak in the spherical nanoparticle is lowered in energy with respect to the bulk case. However, the dependence of the resonance energy on the hydrogen concentration is roughly similar to that in bulk.