退火对ZnS/PS复合体系光致发光特性的影响

用脉冲激光沉积(PLD)技术以多孔硅(PS)为衬底生长了ZnS薄膜,分别测量了ZnS、PS以及ZnS/PS复合体系在室温下的光致发光(PL)光谱。结果发现,ZnS/PS复合体系的PL光谱中PS的发光峰位相对于新制备的PS有所蓝移。把该ZnS/PS样品分成三块,在真空400℃分别退火10,20,30 min,研究不同退火时间对ZnS/PS复合体系光致发光特性的影响。发现退火后样品的PL光谱中都出现了一个新的绿色发光带,归结为ZnS的缺陷中心发光。随着退火时间的延长,PS的发光强度逐渐降低且峰位红移。把ZnS的蓝、绿光与PS的红光相叠加,整个ZnS/PS复合体系在可见光区450~700 nm形成一个较宽的光致发光谱带,呈现较强的白光发射。     

掺钛化学腐蚀法制备发光稳定的多孔硅

本文采用掺钛化学腐蚀法制备出了发光稳定性和均匀性都较好的多孔硅 (PS)。存放和退火试验表明 ,光致发光 (PL)谱峰位不蓝移 ,强度不衰减。多孔硅发光稳定性的提高归因于制备过程中样品表面原位氧和钛的钝化。钛的浓度和腐蚀时间对PL强度有明显影响 ,最佳钛浓度约为 0 0 8mol·L- 1 ,最佳腐蚀时间约为 2 0min。掺钛化学腐蚀法制备的PS的光激发过程符合量子限域机制 ,而其PL过程却与量子限域模型不符 ,这表明其光发射过程不是带 带直接跃迁产生的 ,即存在一个表面态     

退火氧化生成的硅锗低维结构的光致发光性质

用激光辐照辅助电化学刻蚀的方法加工硅锗薄膜样品,30min后,在样品表面形成了多孔状的结构,该结构在724nm处有很强的光致发光(PL)峰。将该多孔状结构的样品置于高温氧化炉中进行不同时间的退火氧化处理后,发现在不同的退火氧化条件下样品的PL光谱发生了明显的变化。通过分析,作者根据量子受限(QC)和量子限制-发光中心(QCLC)模型,建立了新的量子受限-晶体与氧化物界面态综合模型来解释样品PL发光的变化。     

包埋于氮化硅薄膜中的硅团簇的光致发光特性

采用等离子体增强化学气相沉积(PECVD)技术,在低温下制备了富硅氢化氮化硅薄膜。利用红外吸收(IR)谱,光电子能谱(XPS)和光致发光(PL)谱,研究了在不同温度下退火的薄膜样品的结构和发光特性。在经过低温退火的薄膜中观测到一个强的可见发光峰。当退火温度较高时,随着与硅悬键有关的发光峰消失,可见发光峰位发生了蓝移。讨论了退火对薄膜中硅团簇的形成及其对发光的影响。根据Raman谱,计算了氮化硅薄膜中硅团簇的尺寸大小。通过实验结果和分析,我们认为PL谱中较强的室温可见发光峰来自于包埋于氮化硅中的硅团簇。     

不同气体氛围下硅量子点的结构及其发光机理

纳秒脉冲激光在氮气、氧气和空气等不同氛围中加工出的硅量子点都有光致荧光(PL)的发光增强效应,并且在700 nm波长附近观察到了受激辐射.在不同氛围下生成的样品有几乎相同的PL光谱分布,其原因是不同氛围下加工出的样品带隙中有相同的电子态分布.计算结果显示:当硅量子点表面被氮或氧钝化后,在带隙中能够形成几乎相同的局域电子态,这种局域电子态可以俘获来自导带的电子,从而形成亚稳态,这是PL发光增强乃至产生受激辐射的关键因素. 关键词： 硅量子点 PL光谱 发光增强 电子局域态     

多孔硅后处理对其镶嵌染料光学特性的影响

对多孔硅进行真空退火处理和暴露大气快速退火处理,将有机染料香豆素102(C102)镶嵌其中,研究镶嵌复合膜发光特性的变化。通过比较多孔硅退火处理前、后傅立叶红外(FT-IR)吸收光谱的变化,从多孔硅与镶嵌染料分子间的能量传递方式角度出发,解释了PS表面态氧化能改善镶嵌复合膜发光特性的原因。实验通过改变多孔硅表面态,提高了复合膜的发光效率和多孔硅基体的透明程度,证明了多孔硅是一种良好的载体,在发展固体激光器方面有一定的应用,同时为实现硅基蓝绿发光开辟一条新的途径。     

稀土掺杂硅基薄膜的高效发光特性

测量了在不同离子注入剂量,不同退火条件下的Nd注入Si基晶片室温光致发光谱,结果表明它们均具有蓝、紫发光峰,且发光稳定。在一定范围内发光效率随掺杂浓度的增加而增大,随退火条件的不同而改变。在实验室条件下,对掺杂硅片和单晶硅片进行电化学腐蚀制成多孔硅样片,同时用适当配比的HNO3对以单晶硅为基底的多孔硅进行处理,测试了腐蚀后各类样品的光致发光（PL）谱。发现掺稀土Nd的多孔硅和用HNO3处理的多孔硅的发光效率有显著提高。     

水蒸气退火多孔硅发光性能的正电子谱学研究

使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E′γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.     

提高多孔硅传感特性的一种新方法(英文)

研究了多孔硅(PS)吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。结果表明:淬灭多孔硅发光的有机溶剂分子是极性分子,有机溶剂分子的极性不同对多孔硅发光的淬灭程度也不同,且有些有机溶剂分子吸附氧化多孔硅比吸附多孔硅引起的发光淬灭具有更好的可逆性和选择性;用含有胺基的正丁胺(CH3CH2CH2CH2-NH2)作碳源,用射频辉光放电等离子系统在多孔硅表面沉积c n膜对多孔硅进行钝化处理后发现:其电致发光强度明显增强,发光峰位兰移,且在大气中存放60天后,其电致发光谱强度基本不衰减,峰位不再移动。经钝化处理的器件较未经处理的器件具有小的串联电阻Rs和低的驱动电压。这为提高多孔硅的传感特性提供了一种新方法。     

玻璃中CdSeS纳米晶体的室温光致发光谱

对掺有过饱和的镉、硒和少量硫的玻璃在500～800℃分别退火4h,生长了不同尺寸的CdSe_1-xS_x纳米晶体。测量了纳米晶体的室温吸收光谱和光致发光(PL)光谱,550℃生长的样品在300～800nm的范围没有观察到吸收和发光峰,表明温度低于550℃玻璃中不能形成纳米晶体。生长温度在600～650℃,纳米晶体的PL光谱主要为两个宽的发光带,即带边激子发光带和通过表面态复合的发光带。随着生长温度的升高,带边复合发光的蓝移减小,通过表面态的发光逐渐消失,并出现了叠加于宽发光带上的一系列明显的弱发射峰。不同温度生长的样品中,叠加峰的能量相同。同一样品中叠加峰的能量不随激发光波长的变化而变化。     

Spontaneous emission spectrum of a four-level atom in a double-band photonic crystal

The spontaneous emission spectrum from a four-level atom in a double-band photonic crystal has been investigated.We use the model which assumes three atomic transitions. One of the transitions interacts with the free vacuum modes,and the other two transitions couple to the modes of the isotropic photonic band gap (PBG), the anisotropic PBG and another free vacuum. The effects of the fine structure of the lower levels on the spontaneous emission spectrum of an atom are investigated in detail in the three cases. New features of four (two) transparencies with two (one) spontaneous emission peaks, resulting from the fine structure of the lower levels of an atom, are predicted in the case of isotropic PBG modes.     

M-centre luminescence in NaF and LiF: towards a comprehensive interpretation of the m-centre emission properties in alkali halides

Abstract

Emission and excitation spectra were accurately detected as a function of the temperature (in the range 18-300 K) in NaF and LiF samples containing unperturbed M-centres: different coloration techniques and ageing effects were tested in order to obtain the pure M-emission band. On the basis of collected data new trends and correlations are proposed between the halfwidth of the emission bands (H), the effective modes (ω), and the Huang-Rhys factors (S) for M and F centres: the H(M) values are roughly half the H(F) ones, M-emission S values are very similar in different crystals, ω and H values for the M- and F-emissions are proportional to the transverse optical frequency ω_T values.     

Influence of Torsional Vibrations on the Photoluminescence Characteristics of Dye Solutions

The influence of torsional vibrations of fluorophore molecule on polarization spectra and absorption/emission vibronic band profiles of isotropic dye solutions has been considered. Basing on the concept of luminescence center (LC) and assuming that (1) electronic transitions in the LC may be assisted by torsion-vibrational excitations, and (2) reorientations of the LC can be described in terms of Stokes–Einstein rotational diffusion, the formula for time-dependent emission anisotropy, as a function of excitation, , and observation, frequencies has been obtained. It comprises depolarization by combined reorientations of the fluorophore molecule, i.e., its torsional vibrations with respect to the LC, and rotational diffusion of the LC. This approach is a generalization of the appropriate results obtained earlier by Ehrenberg and Rigler and, independently, by Chuang and Isenthal. The considered model has specific property that the torsional vibrations appear both as depolarizing factor for and as shaping factor for absorption/emission bands, resulting in the variation of the emission anisotropy across appropriate band profiles. This is demonstrated graphically using numerical results obtained for a simplified, one-dimensional torsional oscillator. It is also shown that observed absorption and emission spectra of coumarin solutions can be reproduced using this model with appropriate potentials for restoring forces.     

Bi离子掺杂GeO2-Al2O3-M(M=Na2O，BaO，Y2O3)玻璃的光学性质

用高温熔融法制备了Bi离子掺杂浓度为1mol%的GeO-B₂O₃-Na₂O (GBNB)，GeO₂-Al₂O₃-Na₂O(GANB)，GeO₂-Al₂O₃-BaO(GABB)和GeO₂-Al₂O₃-Y₂O₃(GAYB)玻璃.测定了样品玻璃的差热曲线、吸收、发射光谱及荧光衰减曲线.实验发现GBNB，GANB，GAYB，GABB的吸收边带逐步发生红移.由于这些吸收边带是由Bi³⁺的6s²电子到Bi⁵⁺ 6s⁰空轨道的跃迁引起.因此推断GBNB，GANB，GAYB，GABB玻璃中Bi⁵⁺离子的含量逐步增加.在GABB，GAYB，GANB三个样品中观察到发光中心约1220nm超宽带荧光发射.荧光强度从GABB，GAYB，GANB逐步减弱，荧光半高宽和荧光寿命逐步变小.这些超宽带的荧光归属为Bi⁵⁺离子的发光所致.从吸收与荧光光谱的变化，推断在GeO₂-Al₂O₃玻璃中引入BaO，Y₂O₃组分有利于Bi⁵⁺离子的形成.讨论了BaO，Y₂O₃化学组分对Bi离子在玻璃中的价态影响的内在机理. 关键词： 5+离子')" href="#">Bi⁵⁺离子 超宽带发光 吸收带 荧光寿命     

Effects of the impurity–impurity and impurity–host interactions on the charge density and the related processes

Transitions via impurities, in addition to transitions from the valence band to the conduction band in semiconductors increase the generation of electron–hole pairs. These transitions lead to alterations in the electronic density around the impurities, and as a consequence, to modifications in the forces on the impurities. In many cases it leads to an increase in the non-radiative recombination. The understanding of these processes at an atomic scale is very important for the physics of doped semiconductors, and technologically, for optoelectronic and spintronic devices. Using simple approximate models based on first-principles, the charge density and the related processes are analyzed. The results show that an increase in the impurity–host interaction or an increase in the concentration of the impurity leads to small variations in the density around the impurities for different charge states and a decrease in the effective Coulomb repulsion. These facts reduce the mechanism of non-radiative recombination via multi-phonon emission.     

Optical investigation of the red band emission of CdS nanoparticles

Cadmium sulfide (CdS) nanoparticles, with different Cd/S molar ratios, were chemically produced and characterized in this study. High quality CdS nanoparticles were grown in the hexagonal phase, as indicated by X-ray diffraction data and Raman spectroscopy. Photoluminescence was used to investigate the surface effects caused by submitting the nanoparticle-based samples at different laser treatments and vacuum pressure.     

Spontaneous emission spectrum of a three-level atom embedded in photonic crystal

The two models of three-level (one upper level and two lower levels, or two upper levels and one lower level) atom embedded in a double-band photonic crystal are adopted. The atomic transitions from the upper levels to the lower levels are assumed to be coupled by the same reservoir which are respectively the isotropic photonic band gap (PBG) modes, the anisotropic PBG modes and the free vacuum modes. The effects of the fine structure of the atomic ground state levels in the model with one upper level and two lower levels, and the quantum interferences in the model with two upper levels and one lower level on the spontaneous emission spectrum of an atom are investigated in detail. Most interestingly, it is shown that new spontaneous emission lines are produced from the fine splitting of atomic ground state levels in the isotropic PBG case. The quantum interferences induce additional narrow spontaneous lines near the transition from the empty upper level to the lower level.     

40-60GPa冲击加载下蓝宝石发光机理研究

利用轻气炮平面波加载技术结合多通道辐射高温计技术以及瞬态光谱技术,在40-60GPa压力区间同时获得了蓝宝石冲击发光的时间分辨光谱和连续波长分布光谱．结果表明,在该压缩区间蓝宝石发光光谱的波长分布具有普朗克灰体分布特征,是一种典型的热辐射现象．辐射色温与该压力区间蓝宝石熔化温度接近,支持剪切带发光观点,认为剪切带的形成可能与蓝宝石单晶的位错和缺陷有关．对冲击压缩蓝宝石的剪切带发光温度接近熔化温度的观点,用一维塑性流的热方程给出了合理的解释．     

有机稀土Eu（DBM）3bath配合物电致发光

有机稀土Ｅｕ（ＤＢＭ）３ｂａｔｈ配合物电致发光＊梁春军李文连＊＊洪自若彭俊彪ａ）虞家琪ａ）赵丹赵东旭（中国科学院长春物理研究所，长春１３００２１）ａ）（中国科学院激发态物理开放研究实验室，长春１３００２１）关键词有机电致发光，稀土配合物，窄带发射近几...