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Design of direct band gap type I GeSn/Ge quantum dots for mid‐IR light emitters on Si substrate |
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| Authors: | Bouraoui Ilahi |
| Institution: | 1. Department of Physics and Astronomy, College of Sciences, King Saud University, 11451 Riyadh, Saudi Arabia;2. Faculty of Sciences, Micro‐Optoelectronic and Nanostructures Laboratory, University of Monastir, 5019 Monastir, Tunisia |
| Abstract: | |
| Keywords: | band gap GeSn light emission quantum dots |