Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.     

旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用

采用旋涂法制备了氧化锆介质层薄膜,重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆,另一方面促使氧化锆薄膜结晶。此外,转速较高时,其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时,制备的绝缘层厚度具有良好的厚度均匀性,粗糙度为0.7 nm,漏电流为3.13×10^-5 A/cm²（电场强度1 MV/cm）。最终,利用ZrO₂薄膜作为栅极绝缘层,在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管（IGZO-TFT）,其迁移率为6.5 cm²/（V·s）,开关比为2×10⁴。     

Controlling the surface buckling wrinkles by patterning the material system of hard-nano-film/soft-matter-substrate

Wrinkling and buckling of nano-films on the compliant substrate are always induced due to thermal deformation mismatch.This paper proposes effective means to control the surface wrinkling of thin film on the compliant substrate,which exploits the curvatures of the curve cracks designed on the stiff film.The procedures of the method are summarized as:1)curve patterns are fabricated on the surface of PDMS(Polydimethylsiloxane)substrate and then the aluminum film with the thickness of several hundred nano-meters is deposited on the substrate;2)the curve patterns are transferred onto the aluminum film and lead to cracking of the film along the curves.The cracking redistributes the stress in the compressed film on the substrate;3)on the concave side of the curve,the wrinkling of the film surface is suppressed to be identified as shielding effect and on the convex side the wrinkling of the film surface is induced to be identified as inductive effect.The shielding and inductive effects make the dis-ordered wrinkling and buckling controllable.This phenomenon provides a potential application in the fabrication of flexible electronic devices.     

CCD紫外增强薄膜旋涂法工艺优化

在硅基探测器的入射窗上制备荧光下转换薄膜,是一种有效降低成本的紫外荧光增强技术。从理论上探讨了由聚二甲基硅氧烷与颜料黄101混合胶体的紫外荧光薄膜旋涂工艺参数与性能之间关系,搭建紫外荧光薄膜应用于光谱分析的性能测试实验平台,对紫外荧光增强薄膜旋涂工艺参数质量配比、旋涂转速进行优化。光谱分析探测器有两个主要指标,光谱响应灵敏度和光谱分辨率,分析与实验结果表明,利用旋涂法制备紫外增强荧光薄膜,旋涂转速将直接影响薄膜的厚度、表面粗糙度和荧光物质的分布,从而影响光谱分析系统的分辨率;紫外荧光增强薄膜的增强效率与荧光溶剂聚二甲基硅氧烷与荧光物质颜料黄101的质量比密切相关,质量比低无法满足对紫外响应效率的提高,但高质量比,荧光物质处在聚集态荧光自猝灭严重,也不利于增强薄膜的紫外响应效率。最终,在薄膜旋涂工艺优化的基础上,旋涂转速2 500～3 000 r·min-1,荧光物质与荧光溶剂质量比为7∶100制备出紫外荧光增强薄膜。汞灯特征光谱测试结果表明该薄膜313 nm紫外波长处探测响应灵敏度提高了1.6倍左右,对比分析镀膜前后特征光谱的半波带宽,镀制紫外增强荧光薄膜对其影响很小。     

Stoney formula for piezoelectric film/elastic substrate system

With the trends in miniaturization, and particularly the introduction of micro- and nano-electro-mechanical system,piezoelectric materials used in microelectronic devices are deposited usually in the form of thin film on elastic substrates.In this work, the bending of a bilayer comprising a piezoelectric film deposited on an elastic substrate, due to the mismatch,is investigated. An analytic formula relating the curvature of the bilayer to the mismatch, the electroelastic constants and the film thickness is obtained, and from this formula, a transverse piezoelectric constant d_31 can be estimated. Meanwhile the influence of electromechanical coupling coefficient on the curvature is discussed.     

硅掺杂氧化锡柔性薄膜晶体管的制备与特性

研究了柔性非晶硅掺杂氧化锡（SiSnO,STO）薄膜晶体管的电学特性及其在弯曲状态下的电学特性。通过射频磁控溅射在聚酰亚胺（Polyimide,PI）衬底上制备出了柔性非晶硅掺杂氧化锡薄膜晶体管。通过对比不同退火温度的器件性能,发现在300℃能获得最佳器件性能,其饱和迁移率达到2.71 cm²·V^-1·s^-1,开关比高于10⁶,亚阈值摆幅为1.95 V·dec^-1,阈值电压为2.42 V。对器件在不同曲率半径（5,10,20,30 mm）状态下进行输出特性和转移特性测试,发现其在弯曲状态下仍具有良好的电学性能。     

MoSi2薄膜电子性质的第一性原理研究

采用第一性原理计算方法, 研究了四方MoSi₂薄膜的电子性质. 计算结果表明, 各种厚度的薄膜都是金属性的, 并且随着厚度的增加, 其态密度与能带结构都逐渐趋近于MoSi₂块体的特性. 通过对MoSi₂薄膜磁性的分析, 发现三个原子层厚的薄膜具有磁性, 其原胞净磁矩为0.33 μ_B; 而当薄膜的厚度大于三个原子层时, 薄膜不具有磁性. 此外, 进一步对单侧加氢饱和以及双侧加氢饱和结构下三原子层MoSi₂薄膜的电子性质进行了研究, 发现单侧加氢饱和的三原子层MoSi₂薄膜具有磁性, 其原胞净磁矩为0.26 μ_B, 而双侧加氢饱和三原子层MoSi₂薄膜是非磁性的. 双侧未饱和与单侧加氢饱和的三原子层MoSi₂薄膜的自旋极化率分别为30%和33%. 这些研究结果表明, 三原子层厚的MoSi₂ 超薄薄膜在悬空或者生长于基底之上时具有金属磁性, 预示着它在纳米电子学和自旋电子学器件等方面都有潜在的应用前景.     

液相基底温度对沉积银原子及其团簇凝聚过程的影响

研究了沉积银原子及其团簇在液相基底(硅油)表面的凝聚过程随基底温度的变化关系.实验结果表明:当硅油基底温度升高时,沉积银原子及其团簇的凝聚过程仍基本符合二阶段生长模型; 样品具有明显的边缘效应,在样品中心区域,凝聚体的覆盖率比边缘的相应值小,样品中心区域的凝聚体覆盖率先随薄膜名义厚度的增加迅速增大,然后逐渐趋于饱和,覆盖率趋于饱和时的膜厚值随基底温度的升高而降低; 对于一定的薄膜名义厚度,硅油基底温度越高,中心区域的凝聚体覆盖率越小.银原子凝聚体的分枝平均长度随基底温度的演化过程也具有类似的规律.对沉积银 关键词： 薄膜 液相基底 分枝状凝聚体 生长模型     

柔性液晶微透镜阵列的制备与性能研究

针对集成成像视场角狭小的问题,设计并制备了一种柔性圆孔驱动电极控制液晶分子偏转的可弯曲和焦距可调的柔性液晶微透镜阵列。利用光刻技术在柔性ITO基板表面刻蚀并形成规则的圆孔阵列电极,旋涂工艺制备柔性聚酰亚胺(PI)膜层,PI膜层经60℃加热5 min后,再利用等离子体在功率630 W条件下处理5 min固化成PI取向层。利用液晶盒成盒工艺将上、下基板组装成液晶透镜,研究未弯曲和弯曲曲率半径7.5 cm条件下液晶微透镜阵列的光学性能。实验结果表明,所制备的液晶透镜在未弯曲和曲率半径为7.5 cm的情况下均可实现聚焦功能,且液晶微透镜阵列的干涉圆环均匀,聚焦光斑小。在驱动电压3~5.3 Vrms下,弯曲曲率半径为7.5 cm的液晶微透镜阵列焦距可调的范围为0.43~1.05 mm。     

Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology

Kerfless technology is a promising alternative for reducing cost and providing flexible thin crystals in silicon-based semiconductors. In this work we propose a protruded seed substrate technology to prepare flexible monocrystalline Si thin film economically. Grooved seed substrate is fabricated by using SiNx thin film as a mask for the wet-etching and thermal oxidation process. After the SiNx layer on the wedged strip is removed by hot phosphoric acid, the pre-defined structured substrate is achieved with the top of the strip serving as the seed site where there is no oxide layer. And a preferred growth of epitaxial Si on the substrate is performed by introducing an intermittent feed method for silicon source gas. The technique in this paper obviously enhances the mechanical stability of the seed structure and the growth behavior on the seed sites, compared with our previous techniques, so this technique promises to be used in the industrial fabrication of flexible Si-based devices.     

厚度对未掺杂ZnO薄膜光谱性能的影响

X射线衍射光谱、拉曼光谱和紫外可见透射光谱技术是薄膜材料检测的重要技术手段。通过对薄膜材料光谱性能的分析,可以获得薄膜材料的物相、晶体结构和透光性能等信息。为了解厚度对未掺杂ZnO薄膜的X射线衍射光谱、拉曼光谱和紫外可见透射光谱性能的影响,利用溶胶-凝胶法在石英衬底上旋涂制备了不同厚度的未掺杂ZnO薄膜样品,并对薄膜样品进行了X射线衍射光谱、拉曼光谱和紫外可见透射光谱的检测。首先,通过X射线衍射光谱检测发现,薄膜样品呈现出（002）晶面的衍射峰,ZnO薄膜为六角纤锌矿结构,均沿着C轴择优取向生长,且随着薄膜厚度的增加,衍射峰明显增强,ZnO薄膜的晶粒尺寸随着膜厚的增加而长大。利用扫描电子显微镜对薄膜样品的表面形貌分析显示,薄膜表面致密均匀,具有纳米晶体的结构,其晶粒具有明显的六角形状。通过拉曼光谱检测发现,薄膜样品均出现了437 cm-1的拉曼峰,这是ZnO纤锌矿结构的特征峰,且随着薄膜厚度的增加,其特征拉曼峰强度也增加,进一步说明了随着ZnO薄膜厚度的增加,ZnO薄膜晶化得到了加强。最后,通过紫外可见透射光谱测试发现,随着膜厚的增加,薄膜的吸收边发生一定红移,薄膜样品在可见光区域内的透过率随着膜厚度增加而略有降低,但平均透过率都超过90%。通过对薄膜样品的紫外-可见透射光谱进一步分析,估算了薄膜样品的折射率,定量计算了薄膜样品的光学禁带宽度,计算结果表明：厚度的改变对薄膜样品的折射率影响不大,但其禁带宽度随着薄膜厚度的增加而变窄,且均大于未掺杂ZnO禁带宽度的理论值3.37 eV。进一步分析表明,ZnO薄膜厚度的变化与ZnO晶粒尺寸的变化呈正相关,本质上,吸收边或光学禁带宽度的变化是由于ZnO晶粒尺寸变化引起的。     

Electronic structure of molecular beam epitaxy grown 1T'-MoTe_2 film and strain effect

Atomically thin transition metal dichalcogenide films with distorted trigonal(1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investigation of its electronic structure are critical. Here we report the electronic structure of 1T'-MoTe_2 films grown by molecular beam epitaxy(MBE).Growth of the 1T'-MoTe_2 film depends critically on the substrate temperature, and successful growth of the film is indicated by streaky stripes in the reflection high energy electron diffraction(RHEED) and sharp diffraction spots in the low energy electron diffraction(LEED). Angle-resolved photoemission spectroscopy(ARPES) measurements reveal a metallic behavior in the as-grown film with an overlap between the conduction and valence bands. First principles calculation suggests that a suitable tensile strain along the a-axis direction is needed to induce a gap to make it an insulator. Our work not only reports the electronic structure of MBE grown 1T'-MoTe_2 films, but also provides insights for strain engineering to make it possible for quantum spin Hall effect.     

Solution-processed high-k thin films as a resistive switching for ReRAM applications

Resistive switching characteristics of solution-processed high-k thin films (HfO_x and TaO_x) were investigated for ReRAM applications. The thickness of solution-processed high-k thin films can be easily controlled by simple spin coating. We optimized the critical thickness of solution-processed HfO_x and TaO_x thin films, for reliable ReRAM operations. A similar bipolar resistive switching behavior was observed from both solution-processed and sputter-processed HfO_x films. Furthermore, it was found that the solution-processed HfO_x and TaO_x films have a uniform resistive switching characteristic. The dominant conduction of these solution-processed films is described by Ohmic conduction in the low-resistance state. On the other hand, Ohmic conduction at low voltage and Poole–Frenkel emission at high voltage dominate in the high-resistance state. It was verified that the solution-processed HfO_x and TaO_x films have superior endurance and retention characteristics. Therefore, ReRAM devices based on solution-processed high-k materials are expected to be a promising candidate, for usage of resistive memory in glass substrate or flexible substrate based electronic devices.     

Green photoluminescence from highly oriented ZnO thin film for photovoltaic application

We report here the fabrication of ZnO nanoparticles embedded on glass substrate by sol–gel and spin coating technique. Transmission electron microscope images revealed that the thin film is composed of ZnO nanoparticles. X-ray diffraction data confirms that the fabricated ZnO nanoparticles have hexagonal unit cell structure. The ZnO nanocrystals of the thin film are oriented along the c-axis of the hexagonal unit cell. UV–vis absorption spectroscopy shows that the absorption occurring at 373 nm in the ZnO thin film. The band gap was calculated from the absorption data and found to be 3.76 eV. This band gap enhancement occurs due to size effect in the nanoscale regime. Room temperature photoluminescence spectrum shows strong green emission at 530 nm owing to the singly ionized oxygen vacancy. This green emission was further investigated by annealing the thin film at different temperature. This singular green emission will be very useful in optoelectronic and nanophotonic devices.     

ZnO thin film characterization by X-ray reflectivity optimization using genetic algorithm and Fourier transformation

Zinc oxide (ZnO) thin film was fabricated by sol-gel spin coating method on glass substrate. X-ray reflectivity (XRR) and its optimization have been used for characterization and extracting physical parameters of the film. Genetic algorithm (GA) has been applied for this optimization process. The model independent information was needed to establish data analyzing process for X-ray reflectivity before optimization process. Independent information was exploited from Fourier transform of Fresnel reflectivity normalized X-ray reflectivity. This Fourier transformation (Auto Correlation Function) yields thickness of each coated layer on substrate. This information is a keynote for constructing optimization process. Specular X-ray reflectivity optimization yields structural parameters such as thickness, roughness of surface and interface and electron density profile of the film. Acceptable agreement exists between results obtained from Fourier transformation and X-ray reflectivity fitting.     

衬底对PTCDA薄膜结构与电荷输运特性的影响

在不同导电衬底(Au,Al和ITO)上制备了PTCDA薄膜,用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明,薄膜中的大部分PTCDA分子平面与衬底不平行,这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则,在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序,电子传输性能差。通过制备单层结构有机薄膜器件,研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论,并考虑电场强度对迁移率变化的影响,对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合,得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。     

凹球面涂布光刻胶均匀性研究

通过对离心法在凹球面上涂布光刻胶过程进行分析,阐明了离心状态下光刻胶在凹球面基底上的流动机理,结合试验提出影响凹球面涂布光刻胶膜厚均匀性的主要因素有胶液粘度、旋涂速度、旋涂时间,列举了以上因素引起的各种现象,并进行了理论分析。引用凹球面旋涂光刻胶的膜厚公式,建立了膜厚与速度关系数学模型;利用流体力学原理解释了有限圆形空间中流体速度对膜层均匀性的影响,从而解决了大曲率凹球面上制备微细图形结构的关键工艺问题,对非球面上制备微细图形具有借鉴作用。     

激光辐射致热单层薄膜温度响应

用热传导方程计算了在脉宽10ns、波长1.06μm的激光辐射下,TiO_2单层膜的温度场分布.结果表明:膜层的热参数增大,其峰值温度明显降低,而基板热参数变化对膜层温度响应影响很小,温度场分布由电场分布决定,1/4波长薄膜的峰值温度低于半波长薄膜的峰值温度.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.     

Relaxation of residual stress and reentanglement of polymers in spin-coated films

Performing detailed studies of viscoelastic dewetting of thin polystyrene films on solid substrates, we demonstrate the existence of residual stress due to strongly out of equilibrium chain conformations and a reduced entanglement density resulting from film preparation by spin coating. The ratio of stress over elastic modulus was found to increase strongly with decreasing film thickness and increasing chain length. Full equilibration of chain conformations required long times comparable to bulk reptation times. However, for chains longer than about 3000 monomers, the residual stress relaxed faster, at a rate independent of chain length.