| 旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用 |
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| 引用本文： | 钟云肖,周尚雄,姚日晖,蔡炜,朱镇南,魏靖林,徐海涛,宁洪龙,彭俊彪.旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用[J].发光学报,2018,39(2):214-219. |
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| 作者姓名： | 钟云肖 周尚雄 姚日晖 蔡炜 朱镇南 魏靖林 徐海涛 宁洪龙 彭俊彪 |
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| 作者单位： | 1. 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室, 华南理工大学 材料科学与工程学院, 广东 广州 510640;
2. 华南农业大学 电子工程学院, 广东 广州 510642 |
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| 基金项目： | 国家重点研发计划专项（2016YFB0401504）；国家自然科学基金重大集成项目（U1601651）；973国家重点基础研究发展规划（2015CB655004）；广东省自然科学基金（2016A030313459）；广东省科技计划（2014B090915004，2015B090914003，2016A040403037，2016B090907001，2016B090906002）；中央高校基本科研业务费专项资金（2015ZP024，2015ZZ063）资助项目 |
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| 摘 要： | 采用旋涂法制备了氧化锆介质层薄膜，重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆，另一方面促使氧化锆薄膜结晶。此外，转速较高时，其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时，制备的绝缘层厚度具有良好的厚度均匀性，粗糙度为0.7 nm，漏电流为3.13×10-5 A/cm2（电场强度1 MV/cm）。最终，利用ZrO2薄膜作为栅极绝缘层，在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管（IGZO-TFT），其迁移率为6.5 cm2/（V·s），开关比为2×104。
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| 关 键 词： | 氧化锆薄膜 溶液法 旋涂转速 退火温度 |
| 收稿时间： | 2017-06-12 |
Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor |
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| ZHONG Yun-xiao,ZHOU Shang-xiong,YAO Ri-hui,CAI Wei,ZHU Zhen-nan,WEI Jing-lin,XU Hai-tao,NING Hong-long,PENG Jun-biao.Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor[J].Chinese Journal of Luminescence,2018,39(2):214-219. |
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| Authors: | ZHONG Yun-xiao ZHOU Shang-xiong YAO Ri-hui CAI Wei ZHU Zhen-nan WEI Jing-lin XU Hai-tao NING Hong-long PENG Jun-biao |
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| Institution: | 1. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Material College, South China University of Technology, Guangzhou 510640, China;
2. College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China |
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| Abstract: | The zirconia dielectric film was prepared by spin coating, and the effect of spin coating speed and annealing temperature on the properties of the film was discussed. The post-high temperature annealing, on the one hand, can cause the zirconia hydrate to dehydrate to form zirconia, and on the other hand, crystallize the zirconia film. In addition, when the speed is high enough, the change has no significant effect on the thickness and roughness of the film. When the spin coating speed is 5 000 r/min and the annealing temperature is 300℃, the prepared insulating layer has good thickness uniformity, with a roughness of 0.7 nm, and the leakage current density is 3.13×10-5 A/cm2 at electric fields of 1 MV/cm. Thin film transistor (IGZO-TFT) was prepared on a glass substrate using ZrO2 thin film as gate insulating layer. The mobility is 6.5 cm2/(V·s) and the on-to-off current ratio is 2×104. |
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| Keywords: | zirconia film solution process spin coating speed annealing temperature |
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