工作气压对磁控溅射ZnO薄膜结晶特性及生长行为的影响

采用射频反应磁控溅射方法，在Si(001)基片上制备了具有高c轴择优取向的ZnO薄膜.利用原子力显微镜、X射线衍射、透射电子显微镜和透射光谱分析技术，对不同工作气压下合成的ZnO薄膜的表面形貌、微观结构和光学性能进行表征，研究了工作气压对ZnO薄膜的结晶性能以及生长行为的影响.研究结果显示：对于Ar/O₂流量比例接近1∶1的固定比值下，ZnO薄膜的生长行为主要取决于成膜空间中氧的密度，临界工作气压介于0.5—1.0 Pa之间.当工作气压小于临界值时，ZnO薄膜的成核密度较高，且随工作气压的变化明显，ZnO的生长行为受控于氧的密度，属于氧支配的薄膜生长；当工作气压大于临界值以后，ZnO薄膜的成核密度基本保持不变，Zn原子的数量决定薄膜的生长速率；在0.1—5.0 Pa的工作气压范围内，均可获得高度c轴取向的ZnO薄膜，但工作气压的变化改变着ZnO晶粒之间的界面特征和取向关系.随着工作气压的增加，ZnO晶粒之间的界面失配缺陷减少，但平面织构特征逐渐消失，三叉晶界的空洞逐渐扩大，薄膜的密度下降，折射率减小. 关键词： ZnO薄膜 磁控溅射 表面形貌 微观结构 光学性能     

应用离子后处理技术提高薄膜激光损伤阈值

利用电子束热蒸发方法在K9玻璃基底上沉积氧化锆薄膜，并对其中一些样品用低能O2+进行了后处理。采用表面热透镜技术测量薄膜样品表面弱吸收，采用显微镜观察样品离子后处理前后的显微缺陷密度。测试结果表明:经离子后处理样品表面的缺陷密度从18.6/mm2降低到6.2/mm2，且其激光损伤阈值从15.9 J/cm2提高到23.1 J/cm2，样品的平均吸收率从处理前的1.147×10-4降低到处理后的9.56×10-5。通过对处理前后样品的表面微缺陷密度、吸收率及损伤形貌等的分析发现:离子后处理可以降低薄膜的显微缺陷和亚显微缺陷，从而降低薄膜的平均吸收率，同时增强了薄膜与基底的结合力，提高了薄膜的激光损伤阈值。     

TiO2和SiO2薄膜应力的产生机理及实验探索

对最常用的TiO₂和SiO₂薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型，对TiO₂和SiO₂单层膜和多层膜进行了实验测试，得到了一些有价值的结果，特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素，低聚集密度产生张应力，而高聚集密度产生压应力.在多层膜中通过调节工艺参数，适当地控制张应力或压应力，可使累积应力趋向于零. 关键词： 薄膜应力 离子辅助淀积 聚集密度     

电子束蒸发在不同Ar气氛下外退火制备MgB2超导薄膜

制备高质量的MgB2薄膜是实现MgB2超导电子器件应用的前提和基础.我们用电子束蒸发B膜和Mg/B多层膜为前驱然后后退火的方法,分别在高温区(~900℃)和中温区(~750℃)成功获得了MgB2超导薄膜.改变退火的Ar气压条件,采用B膜前驱退火的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc~35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱退火中观察到的完全不同的退火气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对退火气压效应给出了自己的分析和解释,为今后进一步细致研究退火过程中的薄膜生长机制提供了参考.     

氧等离子体处理对氧化锆薄膜性质的影响

用低能氧等离子体对电子束热蒸发后的沉积氧化锆薄膜进行了后处理。通过对其光学性质、缺陷密度、弱吸收及抗激光辐照等性质的研究后发现,经氧等离子体处理后的氧化锆薄膜的折射率、消光系数、缺陷密度及吸收率等均有所降低,薄膜的激光损伤阈值较未处理的样品有了较大的提高。分析探讨了氧等离子体处理技术对薄膜性质的影响。     

光学薄膜的等离子体离子镀的研究

根据薄膜沉积过程等离子体对光学薄膜膜蒸气分子或原子的作用，建立低压等离子体离子镀设备，并对常规光学薄膜、如硫化物、氧化物薄膜以及多层膜器件进行了系统的研究，对所制备薄膜样品的透射光谱、吸收、散射以及膜层的聚集密度等进行了全面的测试分析。实验研究表明，低压等离子体离子镀可大大提高常规光学薄膜的光机性能。     

微波化学气相沉积中气压对金刚石薄膜生长速率和质量的影响

研究了微波化学气相沉积中沉积气压对金刚石薄膜生长速率和质量的影响.研究表明，金刚石薄膜的生长速率随沉积气压的提高而增大，生长速率与沉积气压为线性关系.在高沉积气压下生长的金刚石薄膜晶形完整，拉曼谱测量可得到锐利的金刚石相的峰，但电压-电流测量表明，随着制备时沉积气压的提高，金刚石薄膜的暗电流增大，膜的电学质量下降. 关键词： 金刚石薄膜 生长速率 沉积气压     

沉积温度对一氧化硅薄膜聚集密度的影响

一氧化硅(SiO)薄膜是中短波红外区最常用的光学薄膜之一,高的聚集密度对于提升光谱稳定性和光学薄膜元件的品质非常重要.选用纯度为99.99%的SiO块状材料,在5×10^-4 Pa背景真空中用钼舟蒸发沉积,石英晶振仪将沉积速率控制在1.2~1.5 nm/s范围,硅基片上的膜层厚度约为2.2~2.4 μm,在不同沉积温度下制备样品.用傅里叶红外光谱仪分别测试新鲜薄膜和充分浸湿薄膜的光谱曲线,根据波长漂移理论,计算出薄膜的聚集密度.结果表明:聚集密度随沉积温度的升高而增加,从常温沉积的约0.91上升到250 ℃沉积的0.99以上.     

磁控溅射参数对NiOx薄膜光学常数的影响

采用反应性磁控溅射法制备了NiOx薄膜,并结合椭圆偏振仪、XRD和XPS研究了溅射参量对其光学常量的影响.NiOx薄膜的光学常量随着O2/Ar流量比的增大而减小;热退火后,折射率增大而消光系数下降了50%;溅射功率越大折射率也越大,而工作气压越大折射率反而越小.这些变化分别与薄膜中存在间隙O和Ni空位、NiOx分解以及NiOx薄膜的致密度有关.     

不同参数溅射的ZnO薄膜硫化后的特性

采用直流反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后将它们在H^２S气流中 硫化得到ZnS薄膜．用x射线粉末衍射仪(XRD)、扫描电子显微镜(SEM)和UV-VIS透过光谱对Zn S薄膜样品进行了分析．结果表明, 该ZnS薄膜为六角晶体结构, 沿(002)晶面择优取向生长, 其结晶状态和透过光谱与工作气压、Ar/O^２流量比密切相关. 当气压高于1Pa 时, 得 到厚度很小的ZnS薄膜; 而气压低于1Pa时, 沉积的ZnO薄膜则不能全部反应生成ZnS. 另外, 当Ar/O^２流量比低于4∶1或高于4∶1时, 结晶状态都会变差. 此外, 由于ZnS薄 膜具有高 的沿(002)晶面择优取向的生长特性, 使得退火或未退火ZnO薄膜硫化后的晶粒尺寸变化很小 . 关键词： ZnS薄膜 磁控溅射 ZnO硫化 太阳电池     

Gradient-index narrow-bandpass filter fabricated with glancing-angle deposition

Glancing-angle deposition (GLAD) is a fabrication method capable of producing thin films with engineered nanoscale porosity variations. GLAD can be used to create optical thin-film interference filters from a single source material by modification of the film refractive index through control of film porosity. We present the effects of introducing a layer of constant low density into the center of a rugate thin-film filter fabricated with the GLAD technique. A rugate filter is characterized by a sinusoidal refractive-index profile. Embedding a layer of constant refractive index, with a thickness equal to one period of the rugate index variation, causes a narrow bandpass to appear within the filter's larger stop band. Transmittance measurements of such a gradient-index narrow-bandpass filter, formed with titanium dioxide, revealed an 83% transmittance peak at a vacuum wavelength of 522 nm, near the center of the stop band, with a FWHM bandwidth of 15 nm.     

Very low-refractive-index optical thin films consisting of an array of SiO2 nanorods

The refractive-index contrast in dielectric multilayer structures, optical resonators, and photonic crystals is an important figure of merit that creates a strong demand for high-quality thin films with a low refractive index. A SiO2 nanorod layer with low refractive index of n = 1.08, to our knowledge the lowest ever reported in thin-film materials, is grown by oblique-angle electron-beam deposition of SiO2. A single-pair distributed Bragg reflector employing a SiO2 nanorod layer is demonstrated to have enhanced reflectivity, showing the great potential of low-refractive-index films for applications in photonic structures and devices.     

Effect of annealing on the optical properties of In2Te3 thin films

2 Te₃ thin films of different thickness were prepared in a vacuum of 10^-5 Torr onto glass and quartz substrates held at about 300 K during the deposition process. X-ray diffraction analysis showed that the prepared samples in bulk or as-deposited thin-film forms were in an amorphous state. On annealing at 573 K, films have a β-phase polycrystalline structure. Transmittance and reflectance measurements in the spectral range of 400–2500 nm for films deposited onto quartz substrates were used to calculate the optical constants (the refractive index n, the absorption index k and the absorption coefficient α) for In₂Te₃ films, either as-deposited or annealed at different temperatures. The refractive index has anomalous behavior in the region of the fundamental absorption edge. The allowed optical transitions were found to be nondirect transitions, with an optical gap of 1.02 eV for the samples under test. The effect of annealing on the optical gap is interpreted in terms of the density of states proposed by Mott and Davis. Received: 22 June 1997/Accepted: 9 July 1997     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

Optical properties of aluminium nitride films obtained by pulsed laser deposition: an ellipsometric study

Aluminium nitride (AlN) films obtained by pulsed laser deposition (PLD) at different low ambient nitrogen pressure have been optically investigated by spectral ellipsometry within the 300–800 nm wavelength range, Sellmeier and Wemple–DiDomenico approximation approaches have been applied for the ellipsometric data analysis. Optical parameters such as refractive index and single oscillator energies of deposited films were estimated and their dependence on the N₂ pressure was studied. The obtained refractive index values of AlN films are around 2 in a wide wavelength region above 400 nm and suggest the growth of a polycrystalline structure. The relatively low (<3.4 eV) threshold energies indicate the formation of a defective and disordered structure, formed during the deposition process. PACS 78.20.-e; 78.20.Ci; 78.66.Fd     

紫外光辐照对TiO2薄膜光学性能的影响

 采用电子束热蒸发技术在不同工艺下制备了TiO2薄膜,利用椭偏仪和分光光度计研究了紫外光辐照后薄膜光学特性的变化。实验结果表明：不同工艺下制备的TiO2薄膜经相同条件的紫外光辐照后,其折射率均有所下降,折射率的变化量随着沉积速率上升、基底温度上升、工作真空度下降分别有增大的趋势。薄膜的透射率在紫外光辐照后有一定下降。相同工艺条件下制备的TiO2薄膜,其折射率随着辐照时间的增加,先迅速降低,随后又有所增加,但均低于辐照前薄膜的折射率。     

锗在吸收边附近的压力—折射率系数

目前半导体锗在吸收边附近(1550 nm)的压力-折射率系数在实验和理论上并未研究清楚.本文通过测量在不同压力下镀在光纤端面的高结晶度锗薄膜的反射率,来计算得到锗在吸收边附近的压力-折射率系数.本文的实验结果显示,锗在吸收边附近出现反常色散现象,即折射率随能量变化呈正相关,并且其压力-折射率系数出现反常,为正值,这是由于多晶结构中的激子吸收所引起.通过引入描述激子色散的临界点模型,得到锗在吸收边附近的反常色散范围和压力-折射率系数呈正值的范围.本文的结果将有助于基于锗薄膜的通信C波段光学器件的研究.     

A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells

The relationship between aluminum fire-through and the properties of a-SiN_x:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films.Refractive index, density and deposition rate increased with increasing SiH₄/NH₃ ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiN_x:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate.     

Modeling refraction characteristics of silicon nitride film deposited in a SiH/sub 4/-NH/sub 3/-N/sub 2/ plasma using neural network

Silicon nitride has been deposited using plasma-enhanced chemical deposition (PECVD) equipment. The PECVD process was characterized by conducting a 2/sup 6-1/ fractional factorial experiment on six experimental factors, including substrate temperature, pressure, radio frequency (RF) power, ammonia NH/sub 3/, silane SiH/sub 4/, and nitrogen N/sub 2/ flow rates. Refractive characteristics of the deposited film were examined by modeling the refractive index as a function of experimental factors. A helium-neon laser with a wavelength 6328 /spl Aring/ was used to measure the refractive index. To evaluate the appropriateness of the model, the network trained with 32 experiments was then tested with 12 experiments not pertaining to the training data. Several learning factors involved in training neural networks were optimized and an accurate prediction model with the root mean-squared error of 0.018 was achieved. Compared to statistical regression model, the neural network model demonstrated an improvement of more than 65%. Using various three-dimensional plots, underlying deposition mechanisms were qualitatively estimated. For the limited experimental ranges, the index increased with increasing SiH/sub 4/ flow rate. With an increase in either NH/sub 3/ or N/sub 2/, meanwhile, the index decreased consistently. The index also increased with increasing substrate temperature or pressure. The effects of the temperature were very complex as it interacted with other factors.