Sm_xLa_(1-x)P_5O_(14)和Dy_xY_(1-x)P_5O_(14)晶体的荧光寿命研究

本文用脉冲衰减法和时间分辨荧光光谱法测量了六种不同稀土离子浓度的Sm_xLa_(1-x)P_5O_4晶体的~4G_(5/2)→~6H_J(J=5/2,7/2,9/2,11/2)四个能级和七种不同稀土离子浓度的Dy_xY_(1-x)P_5O_(14)晶体的~4F_(9/2)→~6H_J(J=15/2,13/2,11/2,9/2)四个能级的荧光寿命和荧光强度。结果指出,在这类晶体中,Sm~(3+)和Dy~(3+)的荧光寿命随着离子的浓度增加而变短,存在着严重的荧光浓度猝灭现象。最后还讨论了浓度与寿命,寿命与荧光强度的关系。     

ZnS:Ho~(3 )的辐射跃迁和无辐射过程

本工作研究了Ho~(3 )离子在宽禁带半导体ZnS中的辐射跃迁和无辐射过程。用发射谱线的积分光强和激发态寿命获得ZnS:Ho~(3 )的强度参数Ω_λ,同时计算了九个激发态的辐射跃迁几率和能级寿命。另外,通过在不同温度下测定Ho~(3 )离子~5G_6,~3K_8,~5F_2,~5F_3和~5S_2(~5F_4)能级的发射光强和寿命的方法,研究了这几个激发态间的无辐射过程,其中~5G_6,~3K_8,~5F_2和~5F_3这四个能级是处于热平衡状态,而~5F_3与~5S_2(~5F_4)能级间存在五个声子((1/n)ω_(Lo)=351cm~(-1))参与的多声子弛豫过程。     

镉原子J=1偶宇称能谱的MQDT分析

在多通道量子数亏损理论(MQDT)的基础上,对镉原子J=1偶宇称的MQDT模型进行了分析,并利用MQDT波函数给出了计算高激发态寿命的一般方法,计算并预言了5sns12125snd21321(6≤n≤23)这两个Rydberg系列的寿命,拟合出了它们的寿命计算公式:5sns21211系列为τ=0.8980v2n.755;5snd12231系列为τ=0.3628v2n.829.     

Ru原子荧光及其寿命的测量

本文设计了一个荧光探测系统,采用了电热原子化激光共振激发的方法,可方便地对难熔金属的原子荧光寿命进行测量,从而确定原子能级的寿命,实验中测得Ru原子[4d⁶5s(⁶D)5p]⁷P₄⁰能级的寿命为70.4ns(±5％)。     

LnP_5O_(14)晶体中Tb~(3+)和Eu~(3+)的发光光谱特性

本工作测量了室温下TbP_3O_(14)和EuP_5O_(14)晶体的吸收和发射光谱。根据吸收光谱和Judd-Ofelt理论计算了Tb~(3+)和Eu~(3+)的实验和理论的振子强度。用最小二乘法拟合实验与理论的振子强度得到唯象强度参量Ω_λ。然后计算了Tb~(3+)的~5D_3→~7F_5,~5D_4→~7F_4和~5D_4→~7F_6以及Eu~(3+)的~5D_0→~7F_2,~5D_0→~7F_4的跃迁几率和寿命。同时用时间分辨光谱测量了不同温度下相应的荧光辐射寿命。计算与实验结果基本相符。理论和实验的结果表明Tb~(3+)的~5D_3态的寿命主要取决于~5D_3→~5D_4和~7F_6→~7F_0两能级对之间的电偶极-电偶极交叉弛豫。     

Pr^3＋或Sm^3＋掺杂YAG∶Ce的发光特性及其荧光寿命

研究了Pr3 ,Sm3 掺杂对YAG∶Ce发射光谱及其荧光寿命的影响。观察到当掺杂Pr3 时,在609nm处出现Pr3 的发射峰,而掺杂Sm3 时,在616nm处呈现Sm3 的发射峰。掺杂Pr3 或Sm3 增加红光区的发射峰将有利于提高YAG∶Ce荧光粉的显色性。实验中测定了(Y0.95Sm0.01Ce0.04)3Al5O12、(Y0.95Pr0.01Ce0.04)3Al5O12、(Y0.96Ce0.04)3Al5O12的荧光寿命(τ),观察到在YAG∶Ce中掺入Pr3 或Sm3 使Ce3 的荧光寿命减小。实验结果表明,少量掺杂Pr3 或Sm3 并未引起基质的结构的变化。     

Pr3+或Sm3+掺杂YAG:Ce的发光特性及其荧光寿命

研究了Pr3 ,Sm3 掺杂对YAG:Ce发射光谱及其荧光寿命的影响.观察到当掺杂Pr3 时,在609 nm处出现Pr3 的发射峰,而掺杂Sm3 时,在616 nm处呈现Sm3 的发射峰.掺杂Pr3 或Sm3 增加红光区的发射峰将有利于提高YAG:Ce荧光粉的显色性.实验中测定了(Y0.95Sm0.01Ce0.04)3Al5O12、(Y0.95Pr0.01Ce0.04)3Al5O12、(Y0.96Ce0.04)3Al5O12的荧光寿命(τ),观察到在YAG:Ce中掺入Pr3 或Sm3 使Ce3 的荧光寿命减小.实验结果表明,少量掺杂Pr3 或Sm3 并未引起基质的结构的变化.     

用正电子研究NaCl在NaY沸石上的固溶过程

用正电子湮没谱学研究NaCl与NaY沸石机械混合后, NaCl在NaY中的固溶扩散过程.分别测量不同质量比的NaCl/NaY［(1—20)%］经500℃烘烤1h，NaCl/NaY(15%)经不同温度烘烤1h,以及NaCl/NaY(15%)经500℃烘烤不同时间后的正电子寿命谱.所有寿命谱都出现了5个寿命分量, 其中第3，4，5寿命分别与β笼、超笼及沸石微粒界面空洞的大小和数量相关.实验表明正电子湮没谱学能敏感地表征NaCl在NaY中的固溶扩散过程. 关键词： 正电子湮没谱学 氯化钠 沸石     

Na5Eu(WO4)4单晶的光学性质研究

本文测定了Na5Eu(WO4)4单晶的吸收光谱,荧光寿命和荧光分支比,并计算了5D0→7FJ,的辐射跃迁几率、量子效率和发射截面。     

多色有机薄膜电致发光器件及其稳定性

研究了绿色、红色、蓝色和白色四种有机薄膜电致发光器件。通过掺杂得到了高稳定性的绿色及红色器件 ,绿色器件的半寿命达 140 0 0h(初始亮度 10 0cd/m2 ) ,红色器件的半寿命为 75 0 0h(初始亮度 5 0cd/m2 )。还研究了具有空穴锁定层及非锁定层的两种不同结构的蓝色及白色器件。研究表明无论蓝色还是白色器件 ,具有空穴锁定层的器件稳定性较差 ,老化过程中界面势垒的变化很大。非锁定层的蓝色及白色器件的半寿命分别为 45 0h(初始亮度 5 0cd/m2 )和 30 0h(初始亮度 5 0cd/m2 )。在稳定性改善的基础上研制成功 96× 6 0线 ,分辨率为 2线 /mm的绿色矩阵显示屏 ,设计和研制了驱动及控制电路 ,实现了动态显示     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.