AWG中波导间耦合造成的相位畸变的分析

用(1,1)阶Pad啨近似的广角BPM计算了阵列波导光栅(AWG)中由于阵列波导间耦合造成的相位畸变以及由于相位畸变引起的相位误差分别考虑了光从中心/非中心输入波导入射两种情况结果表明,波导间的耦合会造成显著的相位畸变,但由此引起的相位误差却很小,光从中心输入波导入射时对应的相位误差10-3rad,从非中心输入波导入射时的相位误差约为10-2rad针对波导阵列边缘效应引起的相位畸变,设计AWG结构时,在阵列部分两侧增加了边缘辅助波导结构,从而消除了边缘效应,使得边缘阵列波导对应的相位误差从10-1rad量级减小为10-3(10-2)rad量级.     

快速计算阵列波导光栅波导耦合系数的修正重叠积分方法

提出了一种修正的重叠积分方法用以计算阵列波导光栅(AWG)波分复用器件中光从自由传输区域到阵列波导的耦合系数,并和光束传播法(BPM)数值方法计算得到的结果做了比较通过比较分析,得出结论:当波导中心距不是太小时,用修正重叠积分这一快速方法是合适的.     

高斯光束计算平板波导自由传输区远场分布及其修正

对近轴近似条件下求解亥姆霍兹方程得到的高斯光束显式传播公式做了分析，同时，基于基尔霍夫衍射理论，在菲涅耳近似的条件下给出了相应的高斯光束在远场的传播公式，在此基础上，对近轴近似条件做出了定量分析，给出了这个近似条件引入的误差，提出了一种计算高斯光束远场分布的修正方法，并采用有限差分-光束传播方法(FD-BPM)来检验各种方法的准确性。把这种修正方法应用到平面光集成波导器件，如阵列波导光栅(AWG)、蚀刻衍射光栅(EDG)等器件的设计和模拟中，可以大大降低工作的复杂性，同时可以得到精确的结果。     

Calculation of the spectral response of an arrayed-waveguide gating demultiplexer with a wide-angle beam propagation method in a cylindrical coordinate system

The spectral response of an arrayed-waveguide grating (AWG) demultiplexer is calculated by simulating the field propagation in the output section of an AWG with a wide-angle beam propagation method (BPM) in a cylindrical coordinate system. As in a practical design of an AWG demultiplexer, each output waveguide consists of two straight sections connected by a bending section. The spectral response obtained by the present algorithm is more accurate than those obtained with two popular approximate methods, namely, the conventional overlapped integral method and the standard BPM for radially straight and infinitely long output waveguides. With the present algorithm, the dependence of the spectral response on the parameters of the output section is analyzed. The channel crosstalk and the 3 dB passband width of the spectral response depend mainly on the length of the first straight section, the end separation and the angular separation of the output waveguides. The bending section results in an asymmetrical spectral response with remarkable sidelobes which can be reduced by increasing the bending radius.     

Analytical modeling of loss characteristics of a polymer arrayed waveguide grating multiplexer

Theoretical analysis is performed for the loss characteristics of a polymer arrayed waveguide grating (AWG) multiplexer around the central wavelength of 1.55 μm with the wavelength spacing of 1.6 nm. The total loss of the device includes the diffraction loss in the input and output (I/O) slab waveguides, bent loss caused by the AWG and I/O channels, leakage loss resulted from the high refractive index substrate, and propagation loss due to the absorption and scattering of the materials of the device. The effects of some structural parameters on the loss characteristics are investigated and discussed. The computed results show that when we select the core thickness as 4 μm, core width as 6 μm, pitch of adjacent waveguides as 15.5 μm, diffraction order as 50, the number of the arrayed waveguides as 91, that of the I/O channels as 17, confined layer thickness between the core and the substrate as 10 μm, distance between the focal point and the origin as 5500 μm, and central angle between the central waveguide and the x-axis (i.e. the vertical of the symmetrical line of the device) as 60°, the total loss of the device can be dropped to the range 3.79–7.93 dB.     

聚合物阵列波导光栅复用器关键技术的研究

介绍了阵列波导光栅(AWG)复用器的工作原理;运用光栅衍射理论和马卡提里近似法,对中心波长为1.55 μm,波长间隔为1.6 nm的聚合物AWG进行参量设计,通过数值模拟验证了设计的正确性.用甲基丙烯酸甲酯类聚合物对AWG的制备工艺进行了研究,用铝作掩模制作了聚合物光波导,测试结果表明在1.55 μm处波导实现单模传输.     

阵列波导光栅的简便模拟方法及应用

结合等效折射率方法并利用高斯光束近似给出了一种简便的模拟计算阵列波导光栅方法,可实现AWG锔模拟模拟计算结果与理论公式计算结果吻合利用这种模拟方法,模拟了一个阵列波导光栅(AWG)实例,并考察了阵列波导条数对器件性能的影响,最后分析了制造工艺误差对器件性能的影响     

阵列波导光栅解复用器的标量传输理论及其简化模型

以波导本征模式场作输入光场,阐述了AWG中实际光场的传输数学模型,对输入场作高斯近似,阐述了光场传输的简化模型.通过简化模型与实际情况的比较,肯定了高斯近似简化模型在一定情况下的合理性.对于给定串扰要求,利用高斯近似模型可以决定最外层阵列波导坐标与衍射场光束束腰的比值,对实际器件设计来说有一定意义,但高斯简化模型在一定情况会引入较大误差,精确定量模拟AWG应采用实际光场标量传输模型.     

Parameter optimization and structural design of polymer arrayed waveguide grating multiplexer

First some important parameters are optimized for the structural design of a polymer arrayed waveguide grating (AWG) multiplexer around the central wavelength of 1.55 μm with the wavelength spacing of 1.6 nm. These parameters include the thickness and width of the guide core, mode effective refractive indices and group refractive index, diffraction order, pitch of adjacent waveguides, length difference of adjacent arrayed waveguides, focal length of slab waveguides, free spectral range (FSR), the number of input/output (I/O) channels, and that of arrayed waveguides. Then the bent angles, radii and lengths of all the input/output channels and arrayed waveguides are determined. Finally, a schematic waveguide layout of this device is presented, which contains 2 slabs, 11 input channels, 11 output channels, and 91 arrayed waveguides.     

Method for measuring the phase error distribution of a wideband arrayed waveguide grating in the frequency domain

We describe a method for measuring the phase error distribution of an arrayed waveguide grating (AWG) in the frequency domain when the free spectral range (FSR) of the AWG is so wide that it cannot be covered by one tunable laser source. Our method is to sweep the light frequency in the neighborhoods of two successive peaks in the AWG transmission spectrum by using two laser sources with different tuning ranges. The method was confirmed experimentally by applying it to a 160 GHz spaced AWG with a FSR of 11 THz. The variations in the derived phase error data were very small at +/-0.02 rad around the central arrayed waveguides.     

Optimal design for a flat-top AWG demultiplexer by using a fast calculation method based on a Gaussian beam approximation

Passband broadening of an AWG (array waveguide grating) demultiplexer with an MMI (multimode interference) coupler connected at the end of a tapered input waveguide is considered. An explicit formula based on the field propagation of an approximate Hermit-Gaussian beam is used to calculate quickly and reliably the spectral response of the AWG demultiplexer. The widths of the input waveguide, the output waveguides and the MMI coupler are optimized. The optimal design is verified with the experimental measurement.     

BPM Simulation and Comparison of 1 × 2 Directional Waveguide Coupling and Y-Junction Coupling Silicon-on-Insulator Optical Couplers

For developing large area opto-electronic silicon-on-insulator (SOI) devices, the optical coupler is a basic key device. In this article, the authors design and simulate 1 2 2 directional waveguide coupling and Y-branch coupling optical couplers based on Unibond SOI rib waveguides. The beam propagation method (BPM) is used for light propagation analysis. The simulation results and comparisons of the two kinds of optical couplers are reported. The S-bend waveguide for attaching to the two kinds of SOI optical coupler is also analyzed by BPM. We find that the directional coupler has lower power loss, but the Y-junction coupler is more wavelength insensitive with the same device size and splitting angle. The fabrication tolerance analysis shows Y-junction coupler has better fabrication characteristics.     

Athermal silicon arrayed waveguide grating with polymer-filled slot structure

In this paper, an athermal silicon arrayed waveguide grating (AWG) with the assistance of a polymer-filled slot structure is proposed. Arrayed slot waveguides were used to replace arrayed silicon photonic wires (SPWs). By carefully controlling the temperature dependence of the effective index of the polymer-filled slot waveguides, the athermal silicon AWG is realized. Analysis shows that the center wavelength shift of the AWG can be down to 0.14 pm/°C.     

A novel wavelength dispersive device with a dispersive element based on staircase-like straight and parallel arrayed waveguides

We propose a new type of arrayed waveguide grating (AWG) multiplexer/demultiplexer based on modified group refractive index. This device is composed by an array of straight and parallel waveguides of equal length and each waveguide consist of two sections with different width. The length of the two sections are changed from a waveguide to the adjacent one following a linear dependence resulting in a wavelength dispersive waveguide array. An example of the device design for silicon-on-insulator (SOI) platform is provided and numerical simulations have been carried out for various arrayed waveguide parameters. We demonstrate that the group index modification can be used for tailoring device dispersion properties, and that it can also result in new dispersion characteristics predicted numerically not observed in conventional AWGs. Additional advantages are that the demultiplexer does not necessarily require bending waveguide sections as in a conventional AWG (de)multiplexers, and thus yields highly compact devices with potentially very low insertion loss. Channel spacing of 1 nm have been predicted for sub-micron waveguides sizes. In this paper it is also proposed a novel wavefront converter based on waveguide array lens-like element with waveguides broadened sections. Numerical results for different input/output geometries are analized.     

小尺寸低折射率差硅基二氧化硅阵列波导光栅

随着AWG型器件在光通信系统中的大规模应用,对低成本AWG芯片的需求越来越多。在各种降成本方案中,减小AWG芯片的尺寸是最有效的方法之一。本文介绍了一种新型小尺寸低折射率差硅基二氧化硅阵列波导光栅（AWG）的设计。在该AWG中,输入波导/输出波导与平板波导连接的部分制作成两侧为空气槽的高折射率差波导,所以在与输出平板波导连接处的相邻输出波导间距较小,这样可以在设计上缩短平板波导的长度、减少阵列波导的数量,实现较小的AWG芯片尺寸。该AWG的其它部分,如输入/输出波导与光纤耦合的部分、阵列波导光栅等均采用常规的低折射率波导工艺,所以就同时具有与常规的低折射率波导AWG相同的优点：如低耦合损耗、较好的串扰以及光学特性等。根据这个原理,设计了一种40通道100 GHz频率间隔的低折射率差硅基二氧化硅AWG,其芯片尺寸只有23.88 mm?10.5 mm,是传统相同材料制作的AWG尺寸的1/6。     

采用三维波束传输法的多模干涉耦合器成像位置的数值计算

多模干涉(MMI)耦合器需要精确定位成像位置,以便器件的设计制作。针对强限制和弱限制的三维多模波导干涉耦合器,采用三维交替方向隐式有限差分光束传输法(BPM),数值计算得出多模波导长度、输入波导和输出波导位置。首先通过对对称干涉多模干涉耦合器的数值分析求得多模干涉耦合器的等效宽度Weq及最低二阶模之间的拍长Lc,然后将这些参量结合光束传输法直接用于器件设计。计算显示该方法得到的成像位置和导模传输分析法(MPA)的理论预测比较接近,但Weq和Lc却是由光束传输法计算得到的,导模传输分析法理论只能在得到Weq和Lc的前提下才能得到成像位置。该方法直接针对三维波导进行,没有采用基于等效折射率方法的从三维波导到二维波导的简化处理,并且也没有采用导模传输分析法所采用的近似,保证了计算精度,对于实际多模干涉器件的设计制作可起参考作用。     

一种温度不敏感型阵列波导光栅的研究

研究了的一种新型温度不敏感型阵列波导光栅(AWG)。该新型温度不敏感型阵列波导光栅的波导采用混合材料的波导结构，该混合材料波导通过在石英波导芯层上旋涂聚合物材料的上包层，达到改变波导温度特性的目的，使得阵列波导光栅的温度敏感性降低。通过理论分析和有限差分方法研究了其中两种结构：三层混合材料波导构成的阵列波导光栅和四层混合材料波导构成的阵列波导光栅，计算了该新型温度不敏感型阵列波导光栅的温度特性。结果表明，在一定的设计下，温度变化0～50℃时，这两种温度不敏感型阵列波导光栅的最大波长漂移量小于0．03nm，不到无温度控制时常规阵列波导光栅最大波长漂移量的4％。     

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

The factors influencing the crosstalk of silicon-on-insulator(SOI) nanowire arrayed waveguide grating(AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 d B through adopting 800 nm arrayed waveguide width.     

A novel asymmetric arrayed waveguide grating with different lengths of input/output slabs

A novel arrayed waveguide grating (AWG) with asymmetric configuration is proposed. In this configuration, the length of the output slab region, the width and the spacing of the output waveguides are unequal to the corresponding parts of the input ones. Compared to a conventional symmetric AWG, the asymmetric AWG proposed in this paper has a smaller size without degrading its performance The analytic method used in a conventional symmetric AWG is extended to the asymmetric AWG. A design example of an asymmetric AWG with low insertion loss, low channel crosstalk and wide bandwidth is presented.     

Fabrication of Triplexers Based on Flattop SOI AWG

A triplexer is fabricated based on SOI arrayed waveguide gratings （AWGs）. Three wavelengths of the triplexer operate at different diffraction orders of an arrayed waveguide grating. The signals of 1490nm and 1550nm, which are input from central input waveguide of an AWG, are demultiplexed and the signal of 131Onto, which is input from central output waveguide of an AWG, is uploaded. The tested results show that the downloaded and uploaded signals have fiat-top response. The insertion loss is 9 dB on chip, the nonadjacent crosstalk is less than -30 dB for 1490nm and 1301 nm, and is less than -25 dB for 1550nm, the 3dB bandwidth equates that of the input light source.