Derivative fluorimetry analysis of new cluster structures formed by ethanol and Water molecules

The ultraviolet （UV） light excited fluorescence spectra of ethanol-water mixture with different concentrations are investigated by derivative fluorimetry. It is found that there are 8 types of luminescent cluster molecules, formed by ethanol and water molecules in different ways, existing in the solution. The peak wavelengths of all these clusters＇ fluorescence spectra are measured and their contents are obtained by measuring the peak values in the second derivative fluorescence spectra. The spectra corresponding to the 8 types of clusters are obtained by Gaussian decomposition. It is found that two kinds of cluster molecules whose peak wavelengths are 330 and 345 nm have an optimal excitation wavelength located at （236 4- 3） nm. This research contributes to the study of ethanol-water cluster structures and their physical and chemical characteristics.     

Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing

The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 C for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing.     

Line intensities of the asymptotic asymmetric-top radical HO2 at high temperatures

The total internal partition sums were calculated in the product approximation at temperatures up to 5000 K for the asymptotic asymmetric-top HO2 molecule. The calculations of the rotational partition function and the vibrational partition function were carried out with the rigid-top model and in the harmonic oscillator approximation, respectively. Our values of the total internal partition sums are consistent with the data of HITRAN database with -0.14% at 296 K. Using the calculated partition functions, we have calculated the line intensities of υ2 band of HO2 at several high temperatures. The results showed that the calculated line intensities are in very good agreement with those of HITRAN database at temperatures up to 3000 K, which provides a strong support for the calculations of partition functions and line intensities at high temperatures. Then we have extended the calculation to higher temperatures. The simulated spectra of υ2 band of the asymptotic asymmetric-top HO2 molecule at 4000 and 5000 K are also obtained.     

Influences of Annealing on Residual Stress and Structure of HfO2 Films

HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.     

Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky(JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 C.An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature.A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown.Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time.Finally,a discussion of reducing the reverse recovery time is presented.     

Study on fluorescence spectra of molecular association of acetic acid-water

Fluorescence spectra of acetic acid-water solution excited by ultraviolet （UV） light are studied, and the relationship between fluorescence spectra and molecular association of acetic acid is discussed. The results indicate that when the exciting light wavelength is longer than 246 nm, there are two fluorescence peaks located at 305 and 334 nm, respectively. By measuring the excitation spectra, the optimal wavelengths of the two fluorescence peaks are obtained, which are 258 and 284 nm, respectively. Fluorescence spectra of acetic acid-water solution change with concentrations, which is primarily attributed to changes of molecular association of acetic acid in aqueous solution. Through theoretical analysis, three variations of molecular association have been obtained in acetic acid-water solution, which are the hydrated monomers, the linear dimers, and the water separated dimers. This research can provide references to studies of molecular association of acetic acid-water, especiMly studies of hydrogen bonds.     

Temperature-dependent characteristics of 4Hben SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 ℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.     

Optical spectra and local structure of Eu3+ ions doped in Nb2O5-La2O3-B2O3-BaO glasses

The xNb2O5-(15-x)La2O3-40B2O3-45BaO (x = 5, 7.5, 12.5 mol%) glasses doped with Eu3+ ions in 1mol% are fabricated by the melting method. The Fourier transform infrared (FTIR) spectra, phonon sideband spectra, emission and excitation spectra of the glasses are measured. The crystal field parameter and coordination number of Eu3+ ions in the glasses are obtained according to the splitting of their 5D0 - 7F1levels. The intensity parameters Ω2 and Ω4 of Eu3+ ions for optical transition are calculated from their emission spectra in terms of reduced matrix U(t) (λ= 2,4,6) character for optical transitions. The results indicate that the intensity parameters Ω2 and Ω4 increase with the increase of Nb2O5 content, suggesting that the symmetry becomes lower, the band of Eu and O atoms becomes stronger and the covalence increases with the increase of Nb2O5 content.     

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [11\overline 2 0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580~°C and 10⁴~Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10¹⁴~cm^-3 obtained by c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.     

Raman Spectrum Analysis on the Solid-Liquid Boundary Layer of BGO Crystal Growth

We study the Raman spectra of Bi4GeO12 crystal at different temperatures, as well as its melt. The structure characters of the single crystal, melt and growth solid-liquid boundary layer of BGO are investigated by their high-temperature Raman spectra for the first time. The rule of structure change of BGO crystal with increasing temperature is analysed. The results show that there exists [GeO4] polyhedral structure and Bi ion independently in BGO melt. The bridge bonds Bi-O-Bi and Bi-O-Ge appear in the crystal and at the boundary layer, but disappear in the melt. The structure of the growth solid-liquid boundary layer is similar to that of BGO crystal. In the melt, the long-range order structure of the crystal disappears. The thickness of the growth solid-liquid boundary layer of BGO crystal is about 50 μm.     

Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应

对制备的Ni/4H-SiC肖特基势垒二极管（SBD）进行了γ射线辐照试验,并在辐照过程中对器件分别加0和-30?V偏压.经过1?Mrad（Si）总剂量的γ射线辐照后,不同辐照偏压下的Ni/4H-SiC肖特基接触的势垒高度和理想因子没有退化,SiC外延层中的少子寿命也没有退化.辐照后器件的反向电流下降,这是由于器件表面的负界面电荷增加引起的.研究表明,辐照偏压对Ni/4H-SiC SBD的辐照退化效应没有明显的影响. 关键词： 碳化硅 肖特基 辐照效应 偏压     

n-SiC的电子拉曼散射及二级拉曼谱研究

研究了利用离子注入法得到的掺氮n-SiC拉曼光谱. 理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小. 5145nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A₁)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频6303及635cm^-1处观察到的谱线被认为与深能级缺陷有关. 最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6 关键词： 碳化硅 电子拉曼散射 轨道能谷分裂 倍频谱     

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

利用电子自旋共振波谱（ESR）仪,分析由低压化学气相沉积（LPCVD）法制备的高纯半绝缘4H-SiC材料本征缺陷.结果发现,在暗场条件下获得的缺陷信息具有碳空位（V_C）及其络合物的特征;谱线具有半高宽较大、峰谷明显不对称的特点.分析认为造成ESR谱线半高宽较大及峰谷不对称现象的主要原因是测试温度较高.同时,吸收谱中峰谷不对称现象及较大半高宽现象的出现还与不对称的晶格结构及缺陷浓度的不均匀分布有关.在110 K测试温度下,能级上的电子分布对ESR谱特性影响很小. 关键词： 低压化学气相沉积 高纯半绝缘4H-SiC 电子自旋共振 本征缺陷     

离子注入/辐照引起Al2O3单晶的改性研究

600K温度下用110keV的He^＋,Ne^＋,Ar^＋离子注入及320K温度下用230MeV的^208Pb^27＋辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450nm处出现了强的发光峰。且所有5×10^16ion／cm^2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100nm入射深度以内形成了高浓度的小空洞（1-2nm）,在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460-510cm^-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1000—1300cm^-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。Single crystal sapphire （Al2O3 ） samples were implanted at 600 K by He, Ne and Ar ions with energy of 110 keV to doses ranging from 5 × 10^16 to 2× 10^17 ion/cm^2 or irradiated at 320 K by ^208Pb^27＋ ion with energy of 1.1 MeV/u to the fluences ranging from 1 × 10^12 to 5 × 10^14 ion/cm^2. The modification of structure and optical properties induced by ion implantation or irradiation were analyzed by using photoluminescence（PL） and Fourier transformation infrared spectrum（FIR） spectra and transmission electron microscopy（ TEM ） measurements. The PL measurements showed that absorption peaks located at 375,413 and 450 nm appeared in all the implanted or irradiated samples, the PL intensities reached up to the maximum for the 5 × 10^16 ion/cm^2 implanted samples. After Pb-ion irradiation, a new peak located at 390 nm formed. TEM analyses showed that small size voids,（ 1--2 nm） with high density were formed in the region from the surface till to about 100 nm in depth and also large size Nebubble formed in the Ne-doped region. From the obtained FTIR spectra, it was found that Pb-ion irradiation induced broadening of the absorption band in 460-510 cm^-1 and position shift of the absorption band in 1 000- 1 300 cm^- 1 towards to high wavenumber. The possible damage mechanism in single crystal sapphire induced by energetic ion implantation or irradiation was briefly discussed.     

Synthesis,Spectroscopic and Antimicrobial Investigations of Scandium(Ⅲ) Complexes with Four Kinds of Sulfa Drugs

Herein,this article was focused on the synthesis and discussed the spectroscopic characterizations of four new scandium(Ⅲ)sulfa-drug complexes.The nomenclature and symbols of these drugs were sulfadimidine(sulp-1),sulfanilamide(sulp-2),sulfamethoxazole(sulp-3)and sulfadiazine(sulp-4).The microanalytical and spectroscopic analyses which utilized in this study were micro-analyses,magnetic,FT-IR,UV-Vis techniques.The mid infrared spectra deduced that the four sulfa-drug chelates acts as a bidentate chelates with scandium(Ⅲ)ion via two nitrogen atoms of-NH2-Ar and-NH-SO2 groups.Also,the FTIR spectra of Sc3+complexes referred to the existed of new medium weak bands in the range of 500~400 cm^-1 due to stretching vibration bands ofν(M-N).The elemental analysis technique confirmed the 1∶2 stoichiometry between Sc3+ions and sulp ligand with molecular formula[Sc(sulp)2(Cl)2]·Cl.At room temperature,the results of magnetic measurements for the Sc(Ⅲ)complexes indicated that all of the synthesized complexes have a diamagnetic character with octahedral configuration.The electronic spectra of the free sulfa-drug ligands shows band at 275 and 310 nm which are intraligand charge transfer band.The electronic sbsorption spectra of the Sc3+complexes were recorded using DMSO solvent.The spectra of complexes display bands within 275~388 nm,which attributed toπ-π*,n-π*and charge-transfer M-LCT electronic transitions,which strongly favors the octahedral geometry around Sc(Ⅲ)metal ions.1HNMR spectra of complexes referred to the downfield proton shifts of the-NH2 and NHSO2 groups,which supported the place of coordination.The half maximal inhibitory concentration(IC50)of the ScⅢcomplexes was assessed against the human hepato cellular carcinoma(HepG-2)tumor cell line.     

电喷制备多孔二氧化钛微球及其结构表征

采用电喷离子化技术结合溶胶-凝胶技术制备多孔二氧化钛微球,并利用扫描电镜、红外光谱和X射线衍射等对所得微球的形貌和结构进行了初步的表征。结果表明,该法制备的微球表面不平滑,平均直径范围为350—600nm左右,主要呈锐钛矿晶相。小角X射线衍射的结果表明微球中可能存在有序的孔结构。     

Raman analysis of defects in n-type 4H-SiC

This paper employs micro-Raman technique for detailed analysis of the defects (both inside and outside) in bulk 4H-SiC. The main peaks of the first-order Raman spectrum obtained in the centre of defect agree well with those of perfect bulk 4H-SiC, which indicate that there is no parasitic polytype in the round pit and the hexagonal defect. Four electronic Raman scattering peaks from nitrogen defect levels are observed in the round pit (395\,cm$^{-1}$, 526\,cm$^{-1}$, 572\,cm$^{-1}$, and 635\,cm$^{-1})$, but cannot be found in the spectra of hexagonal defect. The theoretical analysis of the longitudinal optical plasmon--phonon coupled mode line shape indicates the nonuniformity of nitrogen distribution between the hexagonal defect and the outer area in 4H-SiC. The second-order Raman features of the defects in bulk 4H-SiC are well-defined using the selection rules for second-order scattering in wurtzite structure and compared with that in the free defect zone.     

应用于FTIR气体监测的HITRAN数据库分子标准吸收截面计算方法研究

根据HITRAN数据库中分子吸收谱线的积分线强和一些谱线相关参数(中心位置、压力展宽半宽度、温度依赖系数等),研究了应用于FTIR气体监测的HITRAN数据库分子标准吸收截面计算方法,主要包括线强温度修正,谱线展宽,谱线卷积,逐线积分和数值算法.以甲烷为例给出采用矩形(Boxcar)和三角(Triangular)两种截断函数得到的1cm-1分辨率下甲烷分子标准吸收截面数据.     

化学气相沉积法制备Zn2GeO4纳米线及其发光性质的研究

利用化学气相沉积法（CVD）,气-液-固（VLS）生长法则在表面溅有金属Au催化剂层的1 cm×1 cm的Si片上制备三元Zn₂GeO₄纳米线。X射线衍射仪（XRD）测试结果表明,锌源与锗源质量比为8：1时可成功制备出Zn₂GeO₄纳米结构;扫描电子显微镜（SEM）测试结果表明,Zn₂GeO₄纳米线直径为100 nm,长度为10~11 μm;光致发光（PL）测试结果表明,Zn₂GeO₄纳米线在432和480 nm处具有两个发光峰,最后对其生长机理进行了分析。     

离子束合成钇硅化物的结构及红外谱特征

将稀土金属钇离子注入到n型单晶Si(111)中制备出钇硅化物埋层.利用x射线衍射、卢瑟福背散射和傅里叶红外吸收谱测量分析了样品的结构、原子的埋层分布和振动模式.结果表明，Y离子在注入过程中已与基底中的Si原子形成了YSi2结构相.真空下的红外光辐照处理促使YSi2择优取向生长，埋层中Si与Y的平均原子浓度比由24下降为20，与六方YSi2的化学计量比一致.还给出了钇硅化物的特征红外吸收谱.