SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes |
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| Authors: | Wang Yue-Hu Zhang Yi-Men Zhang Yu-Ming Zhang Lin Jia Ren-Xu and Chen Da |
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| Affiliation: | School of Microelectronics, Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | This paper presents the results of unintentionally doped
4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8°
off-axis toward the 11\overline 2 0] direction by low pressure
horizontal hot-wall chemical vapour deposition. Growth temperature
and pressure are 1580~°C and 104~Pa, respectively. Good surface
morphology of the sample is observed using atomic force
microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform
infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to
characterize epitaxial layer thickness and the structural quality of the
films respectively. The carrier concentration in the unintentional 4H-SiC
homoepitaxial layer is about 6.4×1014~cm-3 obtained by
c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the
epitaxial wafer in order to verify the quality of the wafer and to obtain
information about the correlation between background impurity and electrical
properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with
very good performances were obtained and their ideality factors are 1.10 and 1.05
respectively. |
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| Keywords: | 4H-silicon carbide low pressure horizontal hot-wall
chemical vapour deposition atomic force microscope scanning
electron microscopy |
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