Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

Band Gap Energies and Refractive Indices of Epitaxial Pb1-xSrxTe Thin Films

Pb1-x Srx Te thin films with different strontium （St） compositions axe grown on BaF2 （111） substrates by molecular beam epitaxy （MBE）. Using high resolution x-ray diffraction （HPLXRD）, we obtain Pb1-xSrxTe lattice constants, which vary in the range 6.462-6.492 A. According to the Vegard law and HRXRD data, Sr compositions in Pb1-xSrxTe thin films range from 0.0-8.0%. The Pb1-xSrxTe refractive index dispersions are attained from infrared transmission spectrum characterized by Fourier transform infrared （FTIR） transmission spectroscopy. It is found that refractive index decreases while Sr content increases in Pb1-xSrx Te. We also simulate the Pb1-xSrxTe transmission spectra theoretically to obtain the optical band gap energies which range between 0.320 e V and 0.449 e V. The simulated results are in good agreement with the FTIR data. Finally, we determine the relation between Pb1-xSrx Te band gap energies and Sr compositions （Eg = 0.320＋0.510x-0.930x^2 ＋184x^3 （eV））.     

稀磁半导体Zn1-xMnxTe吸收光谱压力红移的理论研究

以自由Mn²⁺离子的径向波函数为基础,通过引入电子云延伸效应系数κ来修正这一径向波函数,得到了稀磁半导体Zn_1-xMn_xTe晶体中Mn²⁺离子的径向波函数.以此波函数为基础,研究了Zn1-xMnxTe晶体吸收光谱的高压谱移特性,并且得到了吸收谱中四条谱线随压力的红移规律.     

Cu100-xZrx金属玻璃压缩率及压力感生晶化现象

 本文采用金刚石对顶压砧高压装置和高压X射线技术测定了两种金属玻璃线压缩率曲线；得到Cu₃₀Zr₇₀和Cu₂₅Zr₇₅的线压缩率分别为2.7×10^-3 GPa^-1和2.3×10^-3 GPa^-1，实验最高压力超过30 GPa。实验过程中首次观察到Cu-Zr金属玻璃在室温下加压发生晶化的现象。     

铜氧化合物超导体Pr1-xCaxBa2Cu3O7-δ的高压合成

 高温高压下合成出了新块材超导体Pr_1-xCa_xBa₂Cu₃O_7-δ（0.4≤x≤0.6）,高压合成使Ca在Pr-123相中的溶解度有很大提高,从而有效地补偿了Pr对CuO₂面空穴的填充而使样品超导。     

Preferential orientation of modified SrBi2Nb2O9 ferroelectric thin films prepared by pulsed laser deposition

We report on the deposition of SrBi₂Nb₂O₉ and Sr_1-xNa_xBi_2-xTe_xNb₂O₉ ferroelectric thin films on Pt/TiO₂/SiO₂/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600-700 °C produces {11l} film texture and dense films with grain sizes up to about 500 nm. The recrystallization at 700 °C of amorphous films deposited at lower temperatures enhances the contribution of the {100} and {010} orientations. These films show smaller grain size, namely 50-100 nm. {11l}-oriented Sr_1-xNa_xBi_2-xTe_xNb₂O₉ films have remnant polarization P_rۆ 7C/cm², a coercive field E_c䏐 kV/cm and dielectric constant, )𪓴. The low value of P_r is probably related to the low fraction of grains with the ferroelectric axis in the direction of the applied field, E. The recrystallized films have more grains with the ferroelectric axis parallel to E; however, they have a low resistivity which so far has prevented electrical characterization.     

Growth of oriented Pb(ZrxTi1-x)O3 thin films on glass substrates by pulsed laser deposition

Oriented crystalline Pb(Zr_xTi_1-x)O₃ (x=0.53) (PZT) thin films were deposited on metallized glass substrates by pulsed laser deposition (1060-nm wavelength Nd:YAG laser light, 10-ns pulse duration, 10-Hz repetition rate, 0.35-J/pulse and 25-J/cm² laser fluence), from a commercial target at substrate temperatures in the range 380-400 °C. Thin films of 1-3 7m were grown on Au(111)/ Pt/NiCr/glass substrates with a rate of about 1 Å/pulse on an area of 1 cm². The deposited PZT films with perovskite structure were oriented along the (111) direction, as was revealed from X-ray diffraction spectra. Fourier transform infrared spectroscopy (FTIR) was performed on different PZT films so that their vibrational modes could be determined. Piezoelectric d₃₃ coefficients up to 30 pC/N were obtained on as-deposited films. Ferroelectric hysteresis loops at 100 Hz revealed a remanent polarization of 20 7C/cm² and a coercive field of 100 kV/cm.     

A位平均离子尺寸对六方RMnO3多铁化合物的结构和性能调控

实验研究了A位离子的化学内压对Hol-xDyMnO3(0≤x≤1)固溶体相结构物理性质的影响,发现掺杂稀土离子Dy3+所引起的内压力可使具有六方结构的HoMnO3向高压正交钙钛矿结构转变,形成六方相、六方相与高压正交相混相以及高压正交相3个区域.利用Rietveld方法,对Hol-xDyxMnO3的X射线衍射数据进行结...     

高压合成AgSbTe2-Sb2Te3的热电性能研究

 利用高压方法,合成了富Sb₂Te₃的AgSbTe₂热电材料(AgSbTe₂)_1-x(Sb₂Te₃)_x (0≤x≤0.3),并对其结构和热电性质进行了研究。结果表明：(AgSbTe₂)_1-x(Sb₂Te₃)_x样品为近单相的AgSbTe₂材料;随着制备压力和Sb₂Te₃掺杂量的增加,(AgSbTe₂)_1-x(Sb₂Te₃)_x的电阻率大幅降低;Seebeck系数在高压作用下变小,而少量掺杂Sb₂Te₃却能提高Seebeck系数;在高压和微量掺杂Sb₂Te₃的共同作用下,AgSbTe₂的功率因子得到了提高;2.0 GPa高压下,制备的Ag_0.9Sb_1.1Te_2.1的品质因子达到0.466,接近Bi₂Te₃的品质因子。     

Role of chemical pressure in enhancing the transition temperature (T<Subscript>c</Subscript>) and upper critical field (H<Subscript>c2</Subscript>) in the Y-doped Ce-oxyfluoride superconductor

Structural and superconducting properties of yttrium substituted Ce_1-xY_x(O/F)FeAs superconductors have been investigated for the first time. All the compounds crystallize in the tetragonal ZrCuSiAs structure type. There is a decrease in both the a and c lattice parameters on increasing yttrium substitution (with fixed F content) along with a substantial enhancement of the superconducting transition temperature (T_c) and upper critical field (H_c2) indicating the influence of chemical pressure. Interestingly the maximum T_c (~48 K) was observed for an intermediate composition (Ce_0.5Y_0.5O_0.9F_0.1FeAs) which is higher than either of the parent Y or Ce-compounds, (YO_0.9F_0.1FeAs (~10 K) and Ce(O/F)FeAs (~42 K)). The transition temperature was also found to be nearly independent of the electron -doping introduced by fluoride substitution (0.1 to 0.2 moles per formula unit) indicating the significance of the charge reservoir layer (Ce-O). The yttrium substituted (fluoride free) compositions of the type, Ce_1-xY_xOFeAs were found to be semimetallic like the parent compound CeOFeAs with the shift in the anomaly temperature towards low temperature on substitution of yttrium ions. Hall coefficient and thermopower measurements show an increase in charge carriers (electrons) through Y-doping in fluorine doped CeOFeAs.     

Ruthenium oxide and strontium ruthenate electrodes for ferroelectric thin-films capacitors

Metallic ruthenium and ruthenium oxides, such as SrRuO₃ and RuO₂, are potential electrode materials for ferroelectric capacitors. The electrical properties (e.g. leakage currents) of such thin film devices are dependent on the electronic properties of the electrode/ferroelectric junctions and therefore also on the electrode work functions. During growth and processing of film-electrode layer structures the formation of sub-oxides within the electrode is possible, with their work functions being unknown. In order to obtain information for predicting device properties, we have systematically analysed the valence bands and work functions of RuO_x and SrRuO_y thin films with different oxidation states by using photoelectron spectroscopy techniques. The results suggest that Ru⁰ and Ru⁴⁺ ions are present in co-existence at the surfaces of oxygen-deficient polycrystalline films (inhomogeneous oxidation). For both oxygen-deficient materials the work function coincides with that of metallic ruthenium (4.6ǂ.1 eV). Only for fully oxidised ruthenium oxide and strontium ruthenate films (no Ru⁰ present at the surface) is the work function increased to 5.0 or 4.9 eV, respectively. As an example of importance for new dynamic random access memory applications, the junctions of Ba_1-xSr_xTiO₃ with SrRuO_y and RuO_x are discussed.     

Superconductivity at 55K in Iron-Based F-Doped Layered Quaternary Compound Sm[O1-xFx]FeAs

We report the superconductivity in iron-based oxyarsenide Sm[O_1-xF_x]FeAs, with the onset resistivity transition temperature at 55.0K and Meissner transition at 54.6K. This compound has the same crystal structure as LaOFeAs with shrunk crystal lattices, and becomes the superconductor with the highest critical temperature among all materials besides copper oxides up to now.     

Influence of cationic stoichiometry of the bottom electrode La1-xSrxCoO3 on the microstructures of Pb(Ta0.05Zr0.48Ti0.47)O3 ferroelectric films using Pt/TiO2 conducting barrier

The heterostructures La_1-xSr_xCoO₃/Pb(Ta_0.05 Zr_0.48Ti_0.47)O₃(PTZT)/La_1-x Sr_xCoO₃ have been deposited on SiO₂/Si(001) substrates using Pt/TiO₂ as conductive barrier by pulsed-laser deposition. La_0.25Sr_0.75CoO₃(25/75) bottom electrodes with a pseudo-cubic perovskite structure favors (001)-textured growth of PTZT films. The ferroelectric capacitor LSCO(25/75)/PTZT/LSCO(25/75) remains about 96% of its polarization after 5᎒¹⁰ switching cycles at an applied voltage of 5 V and a frequency of 500 kHz. The cross-section morphology of scanning electron microscopy and Rutherford backscattering spectra show that no obvious interdiffusion occurs across the interfaces.     

Improvement of Plasticity of Ti-Based Bulk Metallic Glasses by Addition of Nb

Ti-based bulk metallic glasses （Ti40Zr25Cu9NisBe18 ）100-x Nbx with x = 0 to 5 at. % are prepared by copper-mold casting. The glass formation ability is almost unchanged by addition of Nb. The compression plasticity is, however, apparently changed, from 3% at x = 0 to 13% at x = 3, about 330% increases at the strain rate of 1 × 10^-4 8^-1. The increment of the plasticity can be attributed to the segregation of Nb in the area of shear bands during the compression processing. An effective way to increase the plasticity of Ti-based bulk metallic glasses is thus proposed.     

Ba2-xLaxTi4O11在静高压下的拉曼振动光谱及软模相变研究

 本文测量了Ba_1.8La_0.2Ti₄O₁₁和Ba_1.6La_0.4Ti₄O₁₁在静高压下的拉曼振动谱，发现了软模的耦合模行为。通过比较Ba₂Ti₄O₁₁的热力学理论计算值和实验数据，确认这种耦合是软模和一个声学模间的耦合，发生的相变是一个由具有B_g对称性的带中心软光学声子驱动的二级铁弹相变。     

Angle Integrated Photoemission Study of SmO0.85F0.15FeAs

The electronic structure of the new superconductor SmO_1-xF_xFeAs (x=0.15) is studied by angle-integrated photoemission spectroscopy. Our data show a sharp feature very close to the Fermi energy, and a relative flat distribution of the density of states between 0.5eV and 3eV binding energy, which agrees well with the band structure calculations considering an antiferromagnetic ground state. No noticeable gap opening is observed at 12K below thesuperconducting transition temperature, indicating the existence of large ungapped regions in the Brillouin zone.     

Hg1-xCdxTe在高压下的结构、状态方程与相变

 利用X射线粉末衍射方法,在室温高压下观察到了Hg_1-xCd_xTe（x=0.19）的相变。实验是在DAC高压装置上完成的,压力从0逐步加至10.1 GPa。在常温常压下Hg_1-xCd_xTe（x=0.19）具有闪锌矿结构。从实验结果看到,在压力为3 GPa和6.8～8.3 GPa之间有两个结构相变存在。初步认为,后一个相变与Hg_1-xCd_xTe（x=0.19）的金属化有密切关系。通过计算,得到了它在相变前的状态方程,并且与二元HgTe化合物在相变规律上进行了比较。     

Element Substitution Effect in Transition Metal Oxypnictide Re(O1-xFx)TAs (Re=rare earth, T=transition metal)

Different element substitution effects in transition metal oxypnictide Re(O_1-xF_x)TAs, with Re=La, Ce, Nd, Eu, Gd, Tm, T=Fe, Ni, Ru, are studied. Similarto the La- or Ce-based systems, we find that the pure NdOFeAs shows a strong resistivity anomaly near 145K, which is ascribed to the spin-density-wave instability. Electron doping by F increases T_c to about 50K. While in the case of Gd, Tc is reduced below 10K. The tetragonal ZrCuSiAs-type structure could not be formed for Eu or Tm substitution in our preparing process. For the Ni-based case, although both pure and F-doped LaONiAs are superconducting, no superconductivity is found when La is replaced by Ce in both the cases, instead a ferromagnetic ordering transition is likely to form at low temperature in the undoped sample. We also synthesize LaO_1-xF_xRuAs and CeO_1-xF_xRuAs compounds. The metallic behaviour is observed down to 4K.     

高温超导体低温、高压下的物理性质的研究

 在3~20 GPa压力范围内，测量了含氧量较低的YBa₂Cu₃O_7-δ（δ=0.46）单晶压力增强效应（dT_c/dp=4.9KGPa^-1）；YBa₂Cu₃O₇（T_c0=90 K）单晶在压力下临界电流密度随压力变化；外磁场H=30 kO_e时，T_c与磁场、压力关系；压力达16.5 GPa下，Bi₂Sr₂CaCu₂O_x单晶T_c(p)关系（dT_c/dp=-0.4 KGPa^-1）。发现Y系高温超导体的温度压力导数dT_c/dp与T_c0中间呈dT_c/dp=b-mT_c0线性关系（b、m为常数）。结合压力下Y系超导体结构相变和含氧量对T_c影响，分析这类超导体T_c有很强的正压力效应的原因。把实验结果同几种超导电性微观理论模型进行了分析和比较。     

Cd1-xZnxTe在高压下的电学性质、状态方程与相变

 在金刚石压砧装置上,采用电阻和电容测量方法研究了Cd_1-xZn_xTe（x=0.04）在室温下、17 GPa内的电阻、电容与压力的关系。实验结果表明,它在3.1 GPa左右和5 GPa左右发生了两次电子结构相变,而在3.1 GPa以上和5.7 GPa左右发生了两次晶体结构相变。同时,还在活塞-圆筒测量装置上研究了Cd_1-xZn_xTe（x=0.04）在室温下、4.5 GPa内的p-V关系。实验结果表明它在3.8 GPa左右发生了相变。本工作还给出了它在相变前后的状态方程,以及它的Grüneisen参数γ₀、体弹模量B₀ 与B₀ 的压力导数B₀′。