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Angle Integrated Photoemission Study of SmO0.85F0.15FeAs
Authors:OU Hong-Wei  ZHAO Jia-Feng  ZHANG Yan  SHEN Da-Wei  ZHOU Bo  YANGLe-Xian  HE Cheng  CHEN Fei  XU Min  WU Tao  CHEN Xian-Hui  CHEN Yan  FENG Dong-Lai
Institution:Department of Physics, Surface Physics Laboratory (National Key Laboratory), and Advanced Materials Laboratory, Fudan University, Shanghai 200433Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026
Abstract:The electronic structure of the new superconductor SmO1-xFxFeAs (x=0.15) is studied by angle-integrated photoemission spectroscopy. Our data show a sharp feature very close to the Fermi energy, and a relative flat distribution of the density of states between 0.5eV and 3eV binding energy, which agrees well with the band structure calculations considering an antiferromagnetic ground state. No noticeable gap opening is observed at 12K below thesuperconducting transition temperature, indicating the existence of large ungapped regions in the Brillouin zone.
Keywords:74  25  Jb  74  70  Dd  79  60  -i
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