Homogeneous interface-type resistance switching in Au/La<sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub>/SrTiO<sub>3</sub>/F:SnO<sub>2</sub> heterojunction memories |
| |
| Authors: | Zhang Ting Ding Ling-Hong and Zhang Wei-Feng |
| |
| Affiliation: | Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, He’nan University, Kaifeng 475004, China |
| |
| Abstract: | La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications. |
| |
| Keywords: | La0 67Ca0 33MnO3 thin films resistance switching impedance spectroscopy metal-oxide interface |
| 本文献已被 维普 等数据库收录！ |
