紫外光下毛竹的自由基与光电子能谱分析

分析了紫外光照射下毛竹自由基的变化规律和表面化学组成及结构的变化.利用电子自旋共振波谱和X射线光电子能谱技术,分别测量紫外光辐照后毛竹颗粒的自由基波谱和X射线光电子能谱.结果表明:毛竹自由基的光谱分裂因子g=2.003 3,自由基的强度随着辐照时间按Y=1-e-b,Pt规律增加;紫外光照60 min后毛竹表面O/C原子比稍有增加,C-C和C-H含量增加,C-O和C=O含量减少,-O-C=O含量增加为原来的3倍左右,说明毛竹表面生成了一些含氧官能团或碳的氧化态增高.     

a-C∶H(N)薄膜结构的X射线光电子能谱分析

采用直流-射频等离子增强化学汽相沉积技术制备a-C∶H(N)薄膜，用X射线光电子能谱研究了混合气体中N₂含量对薄膜成分与结构的影响.a-C∶H(N)薄膜中含氮量可达9.09%.对a-C∶H(N)薄膜的C1s和N1s结合能谱的分析表明a-C∶H(N)薄膜的结构是由C₃N₄相镶嵌在sp²键结合的CN_x基体中组成.其中C₃N₄相中N和C原子比接近4∶3，不随薄     

Cr4+:Ca2GeO4激光晶体生长及结构表征

采用助熔剂法,以CaCl₂为助熔剂,生长Cr⁴⁺ :Ca₂GeO₄新型近红外可调谐激光晶体.通过X射线衍射(XRD)、激光Raman光谱、X射线光电子能谱(XPS)等方法对晶体进行结构表征.结果表明,得到的晶体为单斜晶系镁橄榄石结构的低温γ-Cr⁴⁺ :Ca₂GeO₄单晶,晶格参数为a=5.3209 (1 =0.1 nm)     

Ho3+掺杂对ZnO薄膜的微观结构和磁性的影响

研究Ho³⁺掺杂对氧化锌半导体材料的微结构和磁学性质影响. 利用热蒸发技术制备了一系列沉积在Si(100)衬底的Zn_1-xHo_xO(x=0.0、0.04、0.05）薄膜. X射线光谱、表面形貌以及磁性的实验结果表明,Ho³⁺掺杂对ZnO薄膜材料的性能影响很大. X射线衍射图显示峰位出现高角度转变并且趋向于(101)取向,在ZnO晶格显示Ho³⁺置换. 扫描电子显微镜和能谱仪对薄膜的表面形貌以及化学     

aodSrTi1-xRuxO3系列类钙钛矿结构氧化物的电子结构研究

利用同步辐射光电子能谱技术研究SrTi_1-xRu_xO₃系列类钙钛矿结构氧化物的电子结构. 通过测量该系列氧化物的光电子能谱(PES)和X射线吸收谱(XAS),得到了SrRuO₃在入射能量53eV时的共振光电子能谱(RPES),SrTi_1-xRu_xO₃中,随着x变化而变化的价带光电子能谱和O 1s的吸收谱.然后参照文献中局部密度近似方法(LDA)模拟计算的能带结构,进行初步的分析和解释.     

变价元素铋掺杂钨酸铅晶体辐照损伤的研究

采用剂量为4Mrad的γ射线辐照Bridgman法生长的未掺杂和掺铋钨酸铅晶体,研究了辐照前后晶体的透射光谱、X射线激发发射光谱(XSL)的变化.利用正电子湮没寿命谱(PAT)和X光电子能谱(XPS)的实验手段,对钨酸铅晶体辐照前后的微观缺陷进行了研究,并对其抗辐照损伤性能及微观机理进行了初步探讨.研究表明,铋掺杂使得晶体中的正电子捕获中心和低价氧浓度下降;辐照后,未掺杂晶体中正电子捕获中心浓度下降,低价氧浓度上升,掺铋晶体则出现了与之完全相反的情况,正电子捕获中心浓度上升,低价氧浓度下降.提出掺铋钨酸铅晶体中铋的掺杂辐照前主要以Bi³⁺占据VPb的形式存在,辐照使变价元素铋发生Bi³⁺→Bi⁵⁺的变价行为,Bi⁵⁺可以替代W⁶⁺格位并使得晶体内部分(WO₄)^2－根团形成(BiO₃+V_o)^－.     

Ni离子注入多晶ZrO2的表面电性能和结构

对氧化钇(Y₂O₃)部分稳定氧化锆(ZrO₂)样品在室温下进行了Ni离子注入(140kev,5×10¹⁵-2×10¹⁷ios/cm²)和热退火处理.应用电学测量,Rutherford背散射技术(RBS),X射线光电子能谱(XPS)和喇曼光谱方法研究了Ni离子注入多晶ZrO₂的表面电性能,注入层结构及其热退火的影响。     

电解有机溶液法制备CNx薄膜

在60℃和常压下,电解甲醇和脲的混合溶液在硅基片上沉积CN_x薄膜．傅里叶红外和Raman测试表明,所得薄膜是非晶态的,碳和氮主要是以C—N,C—C,C＝C和C＝N的形式成键,有少量的碳和氮以C≡N的形式成键．X射线光电子能谱测试表明,氮是以SP²和SP³杂化形式与碳化学成键来成膜的．测试结果表明通过液相沉积法所得CN_x薄膜与汽相沉积法所得CN_x薄膜的结构比较接近.     

AuCn-/0 (n=3-8)的负离子光电能谱和密度泛函理论研究：电子结合能和几何结构的奇偶效应

本文测量了AuC_n^- (n=3-8)的光电子能谱,并且对AuC_n^-/0 (n=3-8)的结构和性质进行了理论研究. 研究发现,AuC_n^-的光电子能谱表现出明显的奇偶交替变化,AuC₃^-、AuC₅^-、AuC₇^-的光电子能谱峰明显宽于AuC₄^-、AuC₆^-、AuC₈^-的光电子能谱峰,AuC₃^-、AuC₅^-、AuC₇^-的电子垂直脱附能低于AuC₄^-、AuC₆^-、AuC₈^-的电子垂直脱附能. AuC_n^- (n=3-8)的最稳定结构是链状结构. 在中性团簇AuC_n(n=3-8)中,除了AuC$₃和AuC₅的结构轻微弯曲外,其他团簇均是直线型结构. 理论计算的∠AuCC角度,Au-C键长和Au原子的电荷分布均呈现奇偶变化,与实验观测一致.     

SrMn0.5Fe0.5O3的自旋玻璃态和过渡金属离子价态的研究

采用固相反应法制备了SrMn_0.5Fe_0.5O₃陶瓷样品,并对样品的晶体结构,磁性和离子价态进行了系统的表征与分析. X射线衍射谱的Rietveld拟合表明样品属于理想的立方钙钛矿型结构,Mn离子和Fe离子随机占据B位的O八面体中心. X射线光电子能谱表明Mn离子为+3和+4的混合原子价态,Fe离子为+3价. 样品在大于230K的高温区域呈现Curie顺磁特性,在小于230 K的低温区域样品表现出自旋玻璃态行为,这种特性源于Mn离子和Fe离子之间的交换作用及自身价态和分布的不均匀性. 由于Fe³⁺离子占据O八面体的中心,对顺磁区的Mssbauer谱测量表现为四级分裂.     

Influence of argon plasma treatment on polyethersulphone surface

Polyethersulphone (PES) was modified to improve the hydrophilicity of its surface, which in turn helps in improving its adhesive property. The modified PES surface was characterized by contact angle measurement, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Vicker’s microhardness measurement. The contact angles of the modified PES reduces from 49° to 10° for water. The surface free energy (SFE) calculated from measured contact angles increases from 66.3 to 79.5 mJ/m² with the increase in plasma treatment time. The increase in SFE after plasma treatment is attributed to the functionalization of the polymer surface with hydrophilic groups. The XPS analysis shows that the ratio of O/C increases from 0.177 to 0.277 for modified PES polymer. AFM shows that the average surface roughness increases from 6.9 nm to 23.7 nm due to the increase in plasma treatment time. The microhardness of the film also increases with plasma treatment.     

Surface composition modification of tungsten higher oxide under He<Superscript>+</Superscript> ion bombardment

The surface reduction of higher oxide WO₃ under irradiation by He⁺ ions with the energies 1 and 3 keV in a high vacuum is investigated by X-ray photoelectron spectroscopy. It is found that lower WO₂ and intermediate WO _x (2 < x < 3) oxides form first in WO₃ surface layers under He⁺ ion bombardment, and with an increase in the irradiation dose metallic tungsten forms. It is shown that the degree of irradiated oxide surface metallization increases with an increase in the energy of the bombarding He⁺ ions. A comparison of WO₃ oxide surface composition modification under He⁺ and Ar⁺ ion irradiation is presented.     

Excimer laser-assisted chemical process for formation of hydrophobic surface of Si (001)

Silicon (Si) wettability is one of the important parameters in the development of Si-based biosensing and lab-on-chip devices. We report on UV laser induced hydrophobicity of Si (001) wafers immersed in methanol during the irradiation with an ArF excimer laser. The irradiation with 800 pulses of the laser operating at 65 mJ/cm² allowed to significantly increase the hydrophobicity of investigated samples as characterized by the static contact angle change from 77° to 103°. Owing to the irradiation with relatively low laser fluence, no measurable change in surface morphology of the irradiated samples has been observed with atomic force microscopy measurements. The nature of the hydrophobic surface of investigated samples is consistent with X-ray photoelectron spectroscopy analysis that indicates formation of Si–O–CH₃ bonds on the surface of the laser-irradiated material.     

毛竹材表面光化降解的FTIR和XPS分析

竹材光变色和光化降解过程比较复杂。该文以我国资源丰富的毛竹为研究对象,利用氙光衰减仪对竹材进行表面劣化处理,采用傅里叶变换红外光谱(FTIR)和X射线光电子能谱分析(XPS)对竹材表面化学组成和结构的变化进行表征。XPS测试结果表明,竹材表面光劣化处理后其O元素含量及氧碳比(O/C)明显增加;从C原子结合形式来看,C1(C—C)含量减少,C2(C—O)含量增加,C3(CO)和C4(OCO)含量增加明显,C的氧化态显著升高。FTIR分析表明,光劣化处理使得与木质素有关的吸收峰(如1 604,1 512及1 462 cm-1)强度明显降低,木质素发生降解,同时1 735 cm-1处非共轭羰基吸收峰强度明显增强,表明有新的羰基类物质生成,竹材表面发生光氧化反应。竹材表面的多糖物质(纤维素和半纤维素)受光劣化影响较小,其表面多糖相对含量在劣化处理后明显提高。     

Oxygen contaminants affecting on the electronic structures of the carbon nano tubes grown by rapid thermal chemical vapor deposition

Oxygen-related electronic structures of CNTs (carbon nanotubes) grown by rapid thermal chemical vapor deposition (RT-CVD) have been investigated by using partial electron yield near edge X-ray absorption spectroscopy (PEY-NEXAFS) and X-ray photoelectron spectroscopy (XPS). On the CNT surface with increased oxygen resulting from e-beam irradiation under the O₂ gas environment, C k-edge NEXAFS spectra showed an increase of the oxygen-related resonance peaks ranging from 287 to 289 eV whereas the sp² related peak at 285.4 eV was nearly unchanged. After the complete removal process of the oxygen atom on the surface by annealing the sample at 500 °C for 30 min, C K-edge spectra showed an abrupt decrease of the oxygen-related resonance peaks in 287-289 eV and an increase of the sp² related peak at 285.4 eV, indicating that the degree of crystallinity in the CNT sample was improved.     

Electronic structure of nitrogen-containing carbon nanotubes irradiated with argon ions: XPS and XANES studies

Using the methods of X-ray photoelectron (XPS) and X-ray absorption near edge structure (XANES) spectroscopies with synchrotron radiation, data on changes in the electronic structure and chemical composition of nitrogen-containing multiwalled carbon nanotubes (N-MWCNTs) upon their exposure to the radiation of argon ions with an energy of 5 keV are obtained. It is found that the exposure leads to an increase in the degree of defectiveness of the N-MWCNTs structure and to the carbon oxidation with formation of various oxygen-containing groups (C–OH, C=O/COOH, C–O–C/O–C–O, and CO₃). The presence of carbon–oxygen bonds on the surface of carbon nanotubes is associated with the formation of radiation defects. It is shown that an increase in the fraction of nitrogen atoms present in the substituting configuration in the N-MWCNTs wall structure due to the irradiation does not give rise to an increase in the density of the occupied states near the Fermi level against the background of an increase in the degree of structure defectiveness, carbon oxidation, and a decrease in the total nitrogen concentration. The obtained results show that the irradiation of N-MWCNTs with argon ions allows one to successfully functionalize their surface.

     

Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2p and O 1s core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si L _2,3 edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO₂ is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.     

Study on the photocatalytic activity of TiN/TiO2 nanoparticle formed by ball milling

TiN/TiO₂ nanoparticle photocatalyst was prepared by ball milling of TiO₂ in H₂O solution doped with TiN. The photocatalyst was characterized by UV–Vis diffuse reflection spectroscopy, X-ray powder diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). Based on the results of the characterization, the mechanism of the increase in photocatalytic activity was investigated. The results show that when the amount of doped TiN is 0.15 wt%, the photocatalytic activity of the TiN/TiO₂ is at its peak. Compared with TiO₂, the photoabsorption wavelength range of the TiN/TiO₂ photocatalyst red-shifts about 30 nm, and the photoabsorption intensity increases as well. The photocatalytic activities of the photocatalyst are higher than that of TiO₂ under UV and visible light irradiation. The increase of surface Ti³⁺ reactive center and the extension of the photoabsorption wavelength are the main factors for the increase in the photocatalytic activity of the TiN/TiO₂. Doped TiN neither changes the TiO₂ crystal phase nor creates new crystal phase by ball milling.     

Comparative study of the photo-discoloration of moso bamboo (Phyllostachys pubescens Mazel) and two wood species

Bamboo or bamboo products undergo surface degradation during outdoor exposure resulting in lower quality in service. In this study, the effect of UV-vis light irradiation on changes in color and surface chemistry of moso bamboo (Phyllostachys pubescens Mazel) was investigated. For comparison purpose, two wood species (a soft and a hardwood) were also studied to present their differences in degradation performance. Color characterization was performed by measuring CIELab parameters (L*, a*, b* and ΔE*), and Fourier transform infrared (FTIR) spectroscopy was used to analyze the chemical changes induced by irradiation. The results showed that the surface color of bamboo changed rapidly during the irradiation process. Compared with the wood species, bamboo was less influenced by photo-irradiation. Chemical analysis indicated that irradiation altered the chemical structures of bamboo surfaces. Lignin was the most sensitive component to photo-degradation and the intensities of its characteristics bands decreased significantly during the irradiation process. This was accompanied by formation of new carbonyl groups at 1735 cm⁻¹. The rate of lignin degradation and carbonyl formation in bamboo was relatively lower compared with the wood species. The color changes (ΔE*) was well correlated with lignin degradation and carbonyl formation regardless bamboo or the wood species.