基于数字微镜器件亚微米制备技术研究

为了实时、便捷的改变光刻图案以用于微纳光子器件制备,使用数字微镜器件构建了一套无掩模亚微米尺度制备系统.基于阿贝成像原理分析了周期结构在相干光照明下的成像过程,并用数值模拟以及空间滤波实验证明了这个过程.使用此实验系统制作出了周期为900nm的二维结构以及周期为数十微米的带缺陷结构.实验表明,使用数字微镜器件可以方便的制作出亚微米尺度的图案.     

基于数字微镜器件亚微米制备技术研究

为了实时、便捷的改变光刻图案以用于微纳光子器件制备,使用数字微镜器件构建了一套无掩模亚微米尺度制备系统.基于阿贝成像原理分析了周期结构在相干光照明下的成像过程,并用数值模拟以及空间滤波实验证明了这个过程.使用此实验系统制作出了周期为900 nm的二维结构以及周期为数十微米的带缺陷结构.实验表明,使用数字微镜器件可以方便的制作出亚微米尺度的图案.     

铌基超导量子比特及辅助器件的制备

近年来超导量子计算的研究方兴未艾,随着谷歌宣布首次实现“量子优势”,这一领域的研究受到了人们进一步的广泛关注.超导量子比特是具有量子化能级、量子态叠加和量子态纠缠等典型量子特性的宏观器件,通过电磁脉冲信号控制磁通量、电荷或具有非线性电感和无能量耗散的约瑟夫森结上的位相差,可对量子态进行精确调控,从而实现量子计算和量子信息处理.超导量子比特有着诸多方面的优势,很有希望成为普适量子计算的核心组成部分.以铌或其他硬金属(如钽等)为首层大面积材料制备的超导量子比特及辅助器件(简称铌基器件)拥有其独特的优点以及进一步发展的空间,目前已引起越来越多的兴趣.本文将介绍常见的多种超导量子比特的基本构成和工作原理,进而按照器件加工的一般顺序,从基片选择和预处理、薄膜生长、图形转移、刻蚀和约瑟夫森结的制备等方面详细介绍铌基超导量子比特及其辅助器件的多种制备工艺,为超导量子比特的制备提供一个可借鉴的清晰的工艺过程.最后,介绍若干制备铌基超导量子比特与辅助器件的具体例子,并对器件制备的工艺与方法的优化做展望.     

超导纳米线单光子探测器件的制备

超导纳米线单光子探测器件(SNSPD)是超导单光子探测系统的核心器件。文中介绍了成功制备的基于5nm厚的NbN超导超薄薄膜的SNSPD器件。器件核心结构为150nm宽的纳米曲折线结构,纳米线条占空比为75%,面积为20μm×20μm。超导纳米线是利用电子束曝光(EBL)技术和反应离子刻蚀(RIE)等工艺技术制备的。所制备的SNSPD样品,在温度3.5K下的临界电流约12.9μA;在1310nm波长光波辐照,12.5μA的偏置电流下,探测效率约0.016%。     

超导约瑟夫森结物理参数的实验推算

超导约瑟夫森结是实现超导量子计算和微波单光子探测的核心器件,其物理参数很难直接测定.与之前常用的测量结微波激励效应估计方法不同,本文通过实验测量低频电流驱动下的约瑟夫森结Ⅰ-Ⅴ曲线及其跳变电流统计分布,并与基于标准电阻电容分路结模型数值模拟进行比对,推算出了约瑟夫森结的临界电流I_c、电容C、电阻R及阻尼参数β_c等物理参数.结果表明,所推算的参数值与基于微观理论推导所得到的Ambgaokar-Baratoff公式基本符合,可供约瑟夫森结的器件参数按需设计和制备工艺的参数设置等参考.     

超导量子比特

随着2019年谷歌成功实现了“量子优势”,超导量子计算的研究正引起人们更加广泛的关注.超导量子比特是拥有量子化能级、量子态叠加和量子态纠缠等量子力学特性的宏观器件,目前被广泛应用于量子物理、原子物理、量子光学、量子化学、量子模拟和量子计算等诸多领域中.本文将重点讨论位相、电荷、传输子以及磁通型超导量子比特的基本原理及其器件结构,并讨论器件的制备方法和量子态测量技术,最后对基于超导量子比特开展的物理问题的研究做一简单介绍.     

微通道板近紫外量子效率测量及成像研究

提出了一种通过测量微通道板输出电流及增益来计算光电流,从而测量出微通道板量子效率的方法,并用该方法测量了微通道板在近紫外(200~380nm)的量子效率.测量结果表明,微通道板的量子效率很低,并且随波长增加而快速下降,200nm波长处的量子效率为10-4数量级,320nm波长处的量子效率为10-8数量级,大于340nm波长处的量子效率极低且趋近于零.微通道板及荧光屏组成的成像器件可以对酒精灯火焰成像,但图像较稀疏,而传统Cs2Te光电阴极紫外成像器件的图像却较密实,这与微通道板量子效率低,Cs2Te光电阴极量子效率高的情形一致.在该成像器件的前端放置一片350nm波长的高通滤光片后,所成的酒精灯火焰图像消失.对被照射目标成像时,如果照射光源为254nm的汞灯,则可以成像;但如果照射光源为365nm汞灯,则不能成像.说明微通道板的光谱响应主要在350nm波长以下,与其量子效率的测量结果一致.最后测量得到该成像器件的分辨力为32lp/mm,与传统Cs2Te光电阴极紫外成像器件的分辨力相同.微通道板及荧光屏组成的成像器件由于不使用光电阴极,具有价格低、寿命长且可靠性高的优点,因此可在紫外信号较强或成像距离较短的条件下使用.     

热处理工艺对MgB_2超导薄膜制备和表面形貌的影响

MgB_2作为一种独特而重要的高温超导材料(HTS),具备超导转变温度高,相干长度大,临界电流和临界磁场高等优势,具有在超导电子学领域大规模应用的潜力。基于MgB_2超导薄膜的超导器件的制备是该材料能否走向大规模应用的关键。在MgB_2超导薄膜的CVD法制备过程中,通过优化退火工艺的温度参数,使得MgB_2超导薄膜在单晶基片上的附着和稳定性增强。加入回火处理工艺,提高了薄膜表面的平整度,为MgB_2超导薄膜从材料走向器件创造了条件。     

中国超导电子学研究及应用进展

超导体的发现距今已有近110年了,高温超导体的发现也已经有30多年了.超导材料的电子学应用在最近一二十年取得了突破性进展.高温超导微波器件显示了比传统微波器件更优越的性能,已经在移动通信、雷达和一些特殊通信系统中取得了规模化应用.超导量子干涉器件以其磁场和电流测量的超高灵敏度,成为地质勘探、磁共振成像和生物磁成像等领域不可替代的手段.包括超导隧道结混频器、超导热电子混频器、超导转变沿探测器及超导单光子探测器等在内的超导传感器/探测器可以探测全波段的电磁波及各种宇宙辐射,具有接近量子极限的超高灵敏度,在地球物理、天体物理、量子信息技术、材料科学及生物医学等众多前沿领域发挥越来越重要的作用.超导参量放大器已经成为实现超导量子计算的关键器件.超导集成电路技术已被列入国际器件与系统技术路线图,成为后摩尔时代微电子领域的前沿阵地之一.在计量科学中,超导约瑟夫森效应及约瑟夫森结阵器件被广泛应用于量子电压基准和国际单位制基本单位的重新定义中.在当前的量子信息技术热潮中,超导电子学扮演重要角色,同时量子热潮也大力推动了超导电子学的发展.本文主要对近几年我国超导电子学研究和应用的现状与进展进行概括总结.     

GMI/超导复合磁强计的超导磁通变换器设计和研究

介绍了一种基于高温超导薄膜材料的具有微弱磁场放大能力的超导磁通变换器。该磁通变换器是本课题组提出的超高精度GMI/超导复合磁强计的核心部件。其基本结构是一个带有轭形微桥结构的闭合超导环,超导环的微桥部分只有几十微米宽,此种高质量的微桥结构是通过半导体光刻精密微加工技术获得的。其较大的超导环面积可以增大磁通汇集区域,提高磁场分辨率;狭窄的微桥结构形成磁场增强的区域,是低场磁敏感器件的工作区域。对此种超导磁通变换器的磁通放大能力进行了分析,并通过仿真对不同尺寸的超导环磁场放大倍数进行了计算。理论计算的结果在磁光成像实验中获得了初步的验证,为复合传感器的实现和优化设计奠定了技术基础。     

Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD

We fabricate an ultraviolet photodetector based on a blend of poly (N-vinylcarbazole) (PVK) and 2- tert-butylphenyl-5-biphenyl-1, 3, 4-oxadiazole (PBD) using spin coating. The device exhibites a low dark current density of 2.2×10 3 μA/cm 2 at zero bias. The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of –1 V. We also study the performances of photodetectors with different blend layer thicknesses. The largest photocurrent density is obtained with a blend of 90 nm at the same voltage.     

The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.     

Multi-color miniature dual-axis confocal microscope for point-of-care pathology

We present a miniature microelectromechanical systems-based dual-axis confocal microscope capable of spatially coregistered fluorescence and reflectance imaging at multiple wavelengths. This device has a 10 mm diameter scan head with a 2 mm diameter tip for convenient use during surgery to guide tumor resection. The microscope has an adjustable focal depth of 20-200 micrometers and is capable of imaging with an axial resolution of 9 micrometers and in-plane resolution of 4 micrometers over a field of view of 450×450 micrometers. Simultaneous two-color imaging of individual optical sections is achieved by using a pair of grating-prism assemblies to compensate for chromatic dispersion in the 2 mm diameter gradient index relay lens at the distal tip of the device. Experimental measurements of the axial response of the microscope, as well as two-color images of a reflective bar target and fresh mouse brain tissues, demonstrate the performance of our device and its potential for multicolor in vivo optical sectioning microscopy.     

Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot

Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot.     

有机发光二极管的光致磁电导效应

制备了结构为ITO/CuPc/NPB/Alq₃/LiF/Al的常规有机发光二极管, 之后对器件采用波长为442 nm和325 nm的激光线进行照射产生激子, 并在小偏压下(保证器件没有开启)对激子的演化过程进行控制, 同时测量器件的光致磁电导(photo-induced magneto-conductance, PIMC). 实验发现, 不同于电注入产生激子的磁电导效应, PIMC在正、反小偏压下表现出明显不同的磁响应结果. 当给器件加上正向小偏压时, 器件的PIMC在0-40 mT范围内迅速上升; 随着磁场的进一步增大, 该PIMC增加缓慢, 并逐渐趋于饱和. 反向小偏压时, 器件的PIMC随着磁场也是先迅速增大(0-40 mT), 但达到最大值后却又逐渐减小. 通过分析外加磁场对器件光生载流子微观过程的影响, 采用'电子-空穴对'模型和超精细相互作用理论对正向偏压下的PIMC进行了解释; 反向偏压下因各有机层的能级关系, 为激子与电荷相互作用提供了必要条件, 运用三重态激子与电荷的反应机制可以解释PIMC出现高场下降的实验现象.     

High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors

In this paper we report studies on normal incidence, InAs/In_0.15Ga_0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In_0.15Ga_0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of V_b=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, V_b=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed.     

MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ～8.7×10¹⁰ cmHz^1/2/W, responsivity ～1.72 A/W and time response ～ 145 ps (V = 200 mV).     

Tunable rectification and negative differential resistance induced by asymmetric doping in phosphorene nanoribbon

By using first-principles calculations based on density functional theory and non-equilibrium Green's function, we present the electronic transport properties of two kinds of devices based on armchair phosphorene nanoribbons, namely, A device, and B device. In A device, the phosphorus atoms in the center of armchair phosphorene nanoribbon have been replaced by impurity atoms of the S and Si, whereas in the B device, the impurity atoms are at the edge of ribbon. The results show that the current–voltage characteristics for both devices have striking nonlinear features and the rectifying behaviors strongly depend on the positions of impurity atoms. The highest rectification ratio is obtained about 125992 at 0.8 V bias for B device. Moreover, only for A device, robust negative differential resistance is observed with a high peak–valley ratio 27500 in the bias range $[?0.2,?0.6]\text{ V}$. The mechanism of the rectification behavior is analyzed in terms of the evolution of energy levels of the related electrodes and transmission spectra as well as the projected self-consistent Hamiltonian eigenvalues with the applied bias voltage. The results indicate that the asymmetric doping of the impurity atoms can lead to a robust rectification which can be utilized to design phosphorene-base rectifier with good performance.     

Some aspects of bias current tuning of W-band IMPATT diodes mounted in a reduced-height waveguide circuit

The bias current tuning of W-band IMPATTs in reduced-height waveguide circuits have been discussed in details. The measured tuning response can be increasing, decreasing or practically insensitive with bias current depending on the device and circuit parameters. The observed results are explaine with a simple device-circuit interaction model.