基于透射光谱确定溅射Al2O3薄膜的光学（已撤稿）

基于反应磁控溅射Al₂O₃薄膜的紫外—可见—近红外透射实验光谱,采用Swanepoel方法结合Wemple-DiDomenico色散模型,方便地导出了Al₂O₃薄膜在200—1100 nm波长范围内的光学常数,包括折射率、色散常数、膜层厚度、吸收系数及能量带隙.研究发现反应磁控溅射Al₂O₃薄膜具有高折射率(1.556— 1.76,测试波长为550 nm)、低吸收和直接能量带隙(3.91—4.20 eV)等光学特性,而且其光学常数对薄膜制备过程中的重要工艺参数——膜层后处理温度表现出强烈的依赖性.此外,在膜层的弱吸收和中等吸收光谱区域内,计算得到的折射率色散曲线与分光光度法的测试结果基本符合,说明本实验中所建立的计算方法在确定反应磁控溅射Al₂O₃薄膜光学常数方面的可靠性. 关键词： 光学常数 Swanepoel方法 2O₃薄膜')" href="#">Al₂O₃薄膜 热处理     

基于透射光谱确定溶胶凝胶ZrO2薄膜的光学常数

基于溶胶凝胶ZrO2薄膜的紫外/可见/近红外透射实验光谱,采用Swanepoel方法结合Wemple-DiDomenico色散模型,方便地导出了ZrO2薄膜在200-1200 nm波长范围内的光学常数,包括折射率、色散常数、膜层厚度、吸收系数及能量带隙.研究发现,溶胶凝胶ZrO2薄膜具有高折射率(1.63-1.93,测试波长为632.8 nm)、低吸收和直接能量带隙(4.97-5.63 eV) 等光学特性,而且其光学常数对薄膜制备过程中的重要工艺参数--膜层后处理温度表现出强烈的依赖性.此外,在膜层的弱吸收和中等吸收光谱区域内,计算得到的折射率色散曲线与分光光度法的测试结果基本符合,说明本实验中所建立的计算方法在确定溶胶凝胶ZrO2薄膜光学常数方面的可靠性.     

溶胶-凝胶ZrO2-TiO2高折射率光学膜层的抗激光损伤性能研究

采用溶胶-凝胶方法制备了ZrO₂-TiO₂(Ti含量为0—100mol%)高折射率光学薄膜. 借助激光动态光散射技术研究溶胶微结构. 采用傅里叶变换红外光谱、原子力显微镜、薄膜光学常数分析仪、漫反射吸收光谱及强激光辐照实验，对膜层的结构、光学性能及抗激光损伤性能进行了系统表征. 结果显示，溶胶-凝胶工艺可以在部分牺牲折射率的情况下，使膜层的抗激光损伤性能得到大幅度提升. 随Ti含量从0mol%增加至100mol%，膜层的平均损伤阈值呈下降趋势，当Ti含量从0mol%增加至60mol%时，平均损伤阈值从57.1J/cm²下降到21.1J/cm²(辐照激光波长为1053nm，脉冲宽度为10ns，“R/1”测试模式)，当Ti含量从60mol%增加至100mol%时，平均损伤阈值变化很小. 综合溶胶微结构、膜层光学性能和损伤实验结果可以推断，强激光诱导多光子吸收是引起膜层损伤的主要原因. 不同配比的复合膜之间光学带隙的显著差异导致相同辐照激光情况下多光子吸收的概率发生变化，从而导致损伤阈值的规律性变化. 关键词： 2-TiO₂薄膜')" href="#">ZrO₂-TiO₂薄膜 溶胶-凝胶 激光诱导损伤 光学带隙     

椭偏光谱法研究溶胶-凝胶TiO2薄膜的光学常数

以钛酸丁酯为前驱体,采用溶胶-凝胶工艺成功制备了TiO₂薄膜.利用反射式椭圆偏振光谱仪测量了薄膜的椭偏参量Ψ和Δ,并用Cauchy模型对椭偏参数进行数据拟合,得到了薄膜的厚度和光学常数在380—800 nm的色散关系.用分光光度计测量了薄膜的反射率,并用干涉法计算薄膜的厚度;使用原子力显微镜观测了薄膜的表面微结构,分析讨论了不同退火温度处理的薄膜微结构与光学常数之间的关系.研究结果表明,Cauchy模型能较好地符合溶胶-凝胶TiO₂薄 关键词： 光学常数 2薄膜')" href="#">TiO₂薄膜 溶胶-凝胶 椭圆偏振     

Ge20Sb15Se65薄膜的热致光学特性变化研究

采用磁控溅射法制备了Ge₂₀Sb₁₅Se₆₅薄膜, 研究热处理温度(150—400 ℃)对薄膜光学特性的影响. 通过分光光度计、X射线衍射仪、显微拉曼光谱仪对热处理前后薄膜样品 的光学特性和微观结构进行了表征, 并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数. 结果表明当退火温度(T_a)小于薄膜的玻璃转化温度(T_g)时,薄膜的光学带隙(E_g^opt)随着退火温度的增加由1.845 eV上升至1.932 eV, 而折射率由2.61降至2.54; 当退火温度大于薄膜的玻璃转化温度时,薄膜的光学带隙随退火温度的增加由1.932 eV降至1.822 eV, 折射率则由2.54增至2.71. 最后利用Mott和Davis提出的非晶材料由非晶到晶态的结构转变模型对结果进行了解释, 并通过薄膜XRD和Raman光谱进一步验证了结构变化是薄膜热致变化的重要原因. 关键词： 20Sb₁₅Se₆₅薄膜')" href="#">Ge₂₀Sb₁₅Se₆₅薄膜 热处理 光学带隙 折射率     

氟化物材料在深紫外波段的光学常数

研究了紫外领域常用的6种大带隙的氟化物薄膜材料,在氟化镁单晶基底上用热舟蒸发镀制了三种高折射率材料薄膜LaF₃,NdF₃,GdF₃和三种低折射率材料薄膜MgF₂,AlF₃,Na₃AlF₆;用商用lambda900光谱仪测量了它们在190—500 nm范围的透射率光谱曲线;用包络法研究了它们的折射率和消光系数,研究了影响透射率和光学常数的主要因素,给出了6 关键词： 光学常数 包络法 氟化物材料 深紫外     

非晶钛酸锶钡薄膜的金属有机分解法制备及其光学性能

本文采用2-辛酸钡(Ba(C₈H₁₅O₂)₂)和3-甲基丁基醋酸盐(CH₃COOC₂H₄CH(CH₃)₂-)为基的特殊前驱体溶液,在硅和石英基片上低温制备Ba_0.7Sr_0.3TiO₃ (BST0.7)薄膜.性能测试结果表明,厚度约为214 nm的非晶BST0.7薄膜的光学带隙能和折射率分别为4.27 eV和n=1.94.薄膜在可见光和近红外区域的消光系数远远低于多晶BST薄膜,约为10^-3数量级.激发波长为450 nm时,在室温环境下非晶BST0.7薄膜在波长520—610 nm处发出强烈的可见光,峰值为540—570 nm,而结晶态的BST0.7薄膜则无发光现象. 关键词： 钛酸锶钡 非晶薄膜 金属有机分解法 光学性能     

PVP掺杂-ZrO2溶胶-凝胶工艺制备多层激光高反射膜的研究

以丙醇锆(ZrPr)为锆源，二乙醇胺(DEA)为络合剂，原位引入聚乙烯吡咯烷酮(PVP)，在乙醇体系中成功地合成了PVP掺杂-ZrO₂溶胶.采用旋涂法在K9玻璃基片上制备了PVP-ZrO₂单层杂化薄膜.用不同掺杂量的PVP-ZrO₂高折射率膜层与相同的SiO₂低折射率膜层交替沉积四分之一波堆高反射膜.借助小角X射线散射研究胶体微结构，用红外光谱、原子力显微镜、紫外/可见/近红外透射光谱、椭圆偏振仪以及1064nm的强激光辐照实验对薄膜的结构、光学和抗激光损伤性能进行表征.研究发现，体系组成的适当配置可以在溶胶稳定的前提下实现ZrPr的充分水解，赋予薄膜良好的结构、光学和抗激光损伤性能.杂化体系中，DEA与ZPr之间强的配合作用大大降低了ZrO₂颗粒表面羟基的活性，使得PVP大分子只是以微弱的氢键与颗粒的表面羟基作用而均匀分散于ZrO₂颗粒的周围，对颗粒的形成和生长无显著影响.因而在实验研究范围内，随PVP含量的增大，PVP-ZrO₂杂化膜层的折射率和激光损伤阈值均无显著变化.但是，薄膜中均匀分布的PVP柔性链可以有效促进膜层应力松弛，显著削弱不同膜层之间的应力不匹配程度、大大方便多层光学薄膜的制备.当高折射率膜层中PVP的质量分数达到15%—20%时，膜层之间良好的应力匹配使得多层高反射膜的沉积周期数可达到10以上.沉积10个周期的多层反射膜，在中心波长1064nm处透射率约为1.6%—2.1%，接近全反射特征，其激光损伤阈值为16.4—18.2J/cm²(脉冲宽度为1ns). 关键词： 溶胶-凝胶 2')" href="#">PVP-ZrO₂ 高反射膜 激光损伤     

纳米ZnO和ZnO-SiO2复合薄膜的光学性质研究

通过溶胶凝胶(sol-gel)法分别在玻璃衬底上制备了ZnO纳米薄膜和ZnO-SiO₂纳米复合薄膜,并利用紫外-可见光分光光度计对薄膜的光学性能进行了分析.可见光-紫外透射谱显示,随着ZnO溶胶浓度从0.7mol/L降低到0.006mol/L,制备的ZnO薄膜从只出现一个380nm(对应的光学禁带宽度为3.27eV)左右的吸收边到在380和320nm(对应的光学禁带宽度为3.76eV)左右各出现一个吸收边,并且随着ZnO溶胶浓度的降低,在380—320nm波段内的透过率明显提高.而Z 关键词： 纳米ZnO 2复合薄膜')" href="#">ZnO-SiO₂复合薄膜 溶胶凝胶法 透射率     

金属有机分解法制备的SrTiO3薄膜的光学特性

采用金属有机分解法（MOD）在石英衬底上沉积了SrTiO3薄膜。所制备的薄膜是晶格常数为a=b=c=3.90?的多晶结构。通过测量190—1100nm波段内的透射光谱，采用包络方法计算了薄膜的光学常数（折射率n和消光系数k）。结果表明，采用MOD方法制备的薄膜的折射率大于采用射频磁控溅射、溶胶—凝胶和化学气相沉积方法制备的薄膜的折射率；薄膜的折射率色散关系满足单振子模型，其中振子强度S0为0.88′1014m-2，振子能量E0为6.40eV；薄膜的禁带宽度为3.68eV。     

Determination of optical properties in nanostructured thin films using the Swanepoel method

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y₂O₃-doped ZrO₂ (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.     

La掺杂浓度对PLZT薄膜红外光学性质的影响

采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了不同La掺杂浓度PLZT(x/40/60)薄膜- x射线衍射分析表明制备的PLZT(x/40/60)薄膜是具有单一钙钛矿结构的多晶薄膜- 通过红外椭圆偏振光谱仪测量了波长为2-5—12-6μm范围内PLZT薄膜的椭偏光谱，采用经典色 散模型拟合获得PLZT薄膜的红外光学常数，同时也拟合获得PLZT薄膜的厚度- 随着La掺杂浓 度的增大，折射率逐渐减小- 而消光系数除PLZT(4/40/60)薄膜外，呈现逐渐增大的趋势- 分析表明这些差异主要与PLZ 关键词： PLZT薄膜 红外光学性质 红外椭圆偏振光谱     

Preparation of sol-gel ZrO2-SiO2 highly reflective multilayer films and laser-induced damage threshold characteristic

Sol-gel (ZrO₂/SiO₂)¹² ZrO₂ films were prepared by spin coating method. The reflectivity spectrum of the films was measured with a Lambda 900 spectrometer. In order to investigate laser-induced damage threshold (LIDT) characteristic of highly reflective films, one-layer ZrO₂ and SiO₂ films, two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were also prepared by spin coating method. LIDT of each film was measured. Damage morphology after laser irradiation was characterized by optical microscopy (Nikon E600K). The experimental results showed that the reflectivity of (ZrO₂/SiO₂)¹² ZrO₂ film at 1064 nm and 355 nm wavelength is 99.7%. The LIDT results decreases as the number of layer of films increases. All the films have similar damage morphology. The experimental results are explained by the different temperature profiles of the films.     

Third-order optical nonlinearities of lead-free (Na1−xKx)0.5Bi0.5TiO3 thin films

(Na_1−xK_x)_0.5Bi_0.5TiO₃ (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n₂ increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility χ⁽³⁾ is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics.     

Effects of Pb addition and heat treatment on optical properties of thermally evaporated Ge1−xSe2Pbx thin films

Thin chalcogenide films of Ge_1−xSe₂Pb_x (x=0, 0.2, 0.4, 0.6 and 0.8) have been prepared by the thermal evaporation technique, from previously synthesized bulk samples. The X-ray diffraction showed the amorphous nature for the as-deposited films and the partially crystalline for the annealed films. The optical constants (the refractive index, n, and absorption index k) were determined for as-deposited and annealed Ge_1−xSe₂Pb_x films of different thicknesses by using spectrophotometeric measurements of the transmittance and reflectance at normal incidence in the spectral range 200-2500 nm. The obtained values of both n and k were found to be independent of the film thickness. The optical absorption edges are described using both the Urbach rule and the indirect transition. In transparent region, the spectral dependences of refractive index were interpreted in the frame of a single oscillator model.