共查询到20条相似文献,搜索用时 123 毫秒
1.
2.
3.
在有效质量近似(EMA)下,采用B样条技术和变分方法,分别研究较大CdTe球量子点(25—35nm)和较小CdS球量子点(025—35nm)中激子的量子受限效应,计算出CdTe和CdS球量子点中受限激子的基态能和束缚能随参数的变化规律,比较两种计算结果得到:(1)较大量子点中受限激子的基态能和束缚能对量子点边界和量子点外部介质的介电常数不敏感,但较小量子点中受限激子的基态能和束缚能对量子点边界和量子点外部介质的介电常数比较敏感.(2)在较强受限区域,大量子点与小量子点的激子基态能和束缚能的变化规律完全不同.(3)B样条技术对于研究这种具有边界的束缚态系统是很精确的方法,这种方法特别适合用于多层结构量子点系统的精确计算.
关键词:
B样条技术
量子受限效应
有效质量近似 相似文献
4.
5.
6.
《中国光学与应用光学文摘》2006,(4)
O471.3 2006043660应变GaN量子点中激子态的研究=Exciton states instrained GaN/AlxGa1 -xN quantum dots[刊,中]/戴宪起(河南师范大学物理与信息工程学院.河南,新乡(453007)) ,黄凤珍…∥功能材料.—2006 ,37(1) .—130-135利用有效质量方法和变分原理,考虑内建电场效应和量子点的三维约束效应,研究了约束在GaN/AlxGa1 -xN圆柱形量子点中的激子特性与量子点的结构参数以及势垒层中Al含量之间的关系。结果表明,对给定大小的量子点,随其高度的增加激子结合能出现一最大值,此时载流子被最有效的约束在量子点内;内建电场使量子点的有效… 相似文献
7.
8.
测定了亚单层InGaAs/GaAs量子点-量子阱异质结构在5K下的时间分辨光致发光谱.亚单层量 子点的辐射寿命在500 ps 至 800 ps之间,随量子点尺寸的增大而增大,与量子点中激子的 较小的横向限制能以及激子从小量子点向大量子点的隧穿转移有关.光致发光上升时间强烈 依赖于激发强度密度.在弱激发强度密度下,上升时间为 35 ps,纵光学声子发射为主要的 载流子俘获机理.在强激发强度密度下,上升时间随激发强度密度的增加而减小,俄歇过程 为主要的载流子俘获机理.该结果对理解亚单层量子点器件的工作特性非常有用.
关键词:
亚单层
量子点-量子阱
时间分辨光致发光谱 相似文献
9.
我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化.研究发现,在低温下用连续光(Cw)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源.然而在脉冲激发下,情况完全不同.在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源.通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰.这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争.我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度"S"形变化的主要根源. 相似文献
10.
11.
Self-assembled InAs quantum dots (QDs) on GaAs(0 0 1) substrate were grown by molecular beam epitaxy (MBE) at a growth temperature of 490 °C. Two different families of dots were observed in the atomic force microscopy (AFM) image and ambiguously identified in the photoluminescence (PL) spectra. Temperature-dependent PL study was carried out in the 8-270 K temperature range. The integrated-PL intensity behavior of the two QDs populations was fit with the help of a rate equations model. It is found that the evolutions of the integrated-PL intensity of the two QDs population were governed by two regimes. The first one occurs in the 8-210 K temperature range and reveals an unusual enhancement of the integrated-PL intensity of the larger QDs (LQDs) class. This was attributed to the carrier supplies from the smaller QDs (SQDs) class via the tunneling process. The second one occurs in the 210-270 K temperature range and shows a common quench of the PL signals of the two QDs families, reflecting the same thermal escape mechanism of carriers. 相似文献
12.
利用变温和变激发功率分别研究了不同厚度CdSe阱层的自组织CdSe量子点的发光。稳态变温光谱表明:低温下CdSe量子阱有很强的发光,高温猝灭,而其表面上的量子点发光可持续到室温,原因归结于量子点的三维量子尺寸限制效应;变激发功率光谱表明:量子点激子发光是典型的自由激子发光,且在功率增加时。宽阱层表面上的CdSe量子点有明显的带填充效应。通过比较不同CdSe阱层厚度的样品的发光,发现其表面上量子点的发光差异较大,这可以归结为阱层厚度不同导致应变弛豫的程度不同,直接决定了所形成量子点的大小与空间分布[1]。 相似文献
13.
14.
采用分子束外延技术,分别在480,520℃的生长温度下,制备了淀积厚度2.7ML的InAs/GaAs量子点。用原子力显微镜对样品进行形貌测试和统计分布。结果表明,在相应的生长温度下,量子点密度分别为8.0×1010,5.0×109cm-2,提高生长温度有利于获得大尺寸的量子点,并且量子点按高度呈双模分布。结合光致发光谱的分析,在480℃的生长条件下,最近邻量子点之间的合并导致了量子点尺寸的双模分布;而在525℃的生长温度下,In偏析和InAs解析是形成双模分布的主要原因。 相似文献
15.
B. H. Koo Y. -G. Park H. Makino J. H. Chang T. Hanada D. Shindo T. Yao 《Applied Surface Science》2002,190(1-4):226-230
Self-assembled InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (1 0 0) InP substrates have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). TEM observations indicate that defect-free InAs QDs can be grown to obtain emissions over the technologically important 1.3–1.55 μm region. The PL peak positions for the QDs shift to low energy as the InAs coverage increases, corresponding to increase in QD size. The room temperature PL peak at 1.58 μm was observed from defect-free InAs QDs with average dot height of 3.6 nm. 相似文献
16.
S. Banerjee N. Halder S. Chakrabarti 《Applied Physics A: Materials Science & Processing》2010,99(4):791-795
We have described Stranski–Krastanow growth of multilayer In(Ga)As/GaAs QDs on Ge substrate by MBE. The growth technique includes
deposition of a thin germanium buffer layer followed by migration-enhanced epitaxy (MEE) grown GaAs layer at 350°C. The MEE
layer was overgrown by a thin low-temperature (475°C) grown GaAs layer with a subsequent deposition of a thick GaAs layer
grown at 590°C. The sample was characterized by AFM, cross-sectional TEM and temperature-dependent PL measurements. The AFM
shows dense formation of QDs with no undulation in the wetting layer. The XTEM image confirms that the sample is free from
structural defects. The 8 K PL emission exhibits a 1051 nm peak, which is similar to the control sample consisting of In(Ga)As/GaAs
QDs grown on GaAs substrate, but the observed emission intensity is lower. The similar slopes of Arrhenius plot of the integrated
PL intensity for the as-grown QD sample grown on Ge substrate as well as for a reference QD sample grown on GaAs substrate
are found to be identical, indicating a similar carrier emission process for both the samples. This in turn indicates coherent
formation of QDs on Ge substrate. We presume due to the accumulated strain associated with the self-assembled growth of nanostructures
on Ge that nonradiative recombination centers are introduced in the GaAs barrier in between the QD layers, which in turn degrades
the overall optical quality of the sample. 相似文献
17.
In this paper, we present a new approach to obtain large size dots in an MBE grown InAs/GaAs multilayer quantum dot system. This is achieved by adding an InAlGaAs quaternary capping layer in addition to a high growth temperature (590°C) GaAs capping layer with the view to tune the emission wavelength of these QDs towards the 1.3 μm/0.95 eV region important for communication devices. Strain driven migration of In atoms from InAlGaAs alloy to the InAs QDs effectively increases the size of QDs. Microscopic investigations were carried out to study the dot size and morphology in the different layers of the grown samples. Methods to reduce structural defects like threading dislocations in multilayer quantum dot samples are also studied. 相似文献
18.
采用一种新方法生长多层InGaN/GaN量子点,研究所生长样品的结构和光学特性。该方法采用了低温生长和钝化工艺,所以称之为钝化低温法。第一层InGaN量子点的尺寸平均宽度40nm,高度15nm,量子点密度为6.3×1010/cm2。随着层数的增加,量子点的尺寸也逐渐增大。在样品的PL谱测试中,观察到在In(Ga)As材料系中普遍观察到的量子点发光的温度特性---超长红移现象。它们的光学特性表明:采用钝化低温法生长的纳米结构中存在零维量子限制效应。 相似文献
19.
Mahesh Kumar Basanta Roul Thirumaleshwara N. Bhat Mohana K. Rajpalke Neeraj Sinha A. T. Kalghatgi S. B. Krupanidhi 《Journal of nanoparticle research》2011,13(3):1281-1287
One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the
fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical
emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as
flux rate and growth time. Due to the large lattice mismatch, between InN and Si (~8%), the dots formed from the Strannski–Krastanow
(S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation
distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions,
follow the scaling function. 相似文献
20.
利用分子束外延技术(MBE),在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品,并制备了量子点红外探测器件。利用原子力显微镜(AFM)和光致发光(PL)光谱研究了量子点的表面结构、形貌和光学性质。渐变InGaAs层的插入有效地释放了InAs量子点所受的应力,抑制了量子点中In组分的偏析,提高了外延层的生长质量,降低了势垒高度,使InAs量子点荧光波长红移。伏安特性曲线和光电流(PC)谱结果表明,生长条件的优化提高了器件的红外响应,具有组分渐变的InGaAs层的探测器响应波长发生明显红移。 相似文献